Patents by Inventor Yohan Desieres

Yohan Desieres has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240411158
    Abstract: A device including, stacked in a vertical direction (z), a silicon-based substrate, a nucleation layer made of a nitride-based refractory material, a lithium niobate-based layer portion, called LNO portion, made of mesa on the nucleation layer, the LNO portion being bordered by a masking layer. The device further includes at least one electrode configured to apply an electric field to the LNO portion. A method for producing such a device, including a formation by localised epitaxy of the LNO portion, is also disclosed.
    Type: Application
    Filed: June 3, 2024
    Publication date: December 12, 2024
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Florian DUPONT, Yohan DESIERES
  • Patent number: 11385484
    Abstract: Photonic transmitter, comprising: a stack of a first layer, second layer and third layer stacked on top of one another, a laser source comprising a first waveguide and a second waveguide. The stack comprises: a fourth layer located on the third layer, the thickness of this fourth layer being comprised between 40 nm and 1 ?m in order to obtain adiabatic coupling between the first and second waveguides, and a fifth layer located directly on the fourth layer, the second waveguide being entirely structured in a III-V gain medium of this fifth layer. The first waveguide comprises a first portion made of semiconductor located inside the third layer and that extends as far as to the interface between the third and fourth layers.
    Type: Grant
    Filed: November 18, 2020
    Date of Patent: July 12, 2022
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Karim Hassan, Yohan Desieres
  • Publication number: 20220190026
    Abstract: A method of manufacturing an emissive screen comprising LEDs, including the steps of: a) depositing a first metal layer on a surface of a control circuit; b) depositing a second metal layer on a surface of an optoelectronic circuit; c) bonding the optoelectronic circuit to the control circuit by direct bonding of the second metal layer to the first metal layer, by aligning the optoelectronic circuit with respect to the control circuit so that different emission cells of the optoelectronic circuit are arranged opposite different metal connection pads of the control circuit; and d) forming, from the surface of the optoelectronic circuit opposite to the control circuit, trenches laterally delimiting each emission cell.
    Type: Application
    Filed: March 27, 2020
    Publication date: June 16, 2022
    Applicant: Commissariat à I'Énergie Atomique et aux Énergies Alternatives
    Inventors: François Levy, Bernard Aventurier, Yohan Desieres
  • Publication number: 20220029071
    Abstract: The optoelectronic device includes a light-emitting diode configured to emit an electromagnetic radiation at an emission wavelength of the light-emitting diode in the ultraviolet. The optoelectronic device includes an optical device configured to extract photons generated by the light-emitting diode, said optical device being arranged on an emission face of the light-emitting diode, said optical device including transparent particles at the emission wavelength of the light-emitting diode. The optical device includes conversion particles configured to emit, by converting a part of the electromagnetic radiation emitted by the light-emitting diode, an electromagnetic radiation at an emission wavelength of the conversion particles included in the ultraviolet and strictly greater than the emission wavelength of the light-emitting diode.
    Type: Application
    Filed: November 26, 2019
    Publication date: January 27, 2022
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: David VAUFREY, Yohan DESIERES
  • Publication number: 20210149228
    Abstract: Photonic transmitter, comprising: a stack of a first layer, second layer and third layer stacked on top of one another, a laser source comprising a first waveguide and a second waveguide. The stack comprises: a fourth layer located on the third layer, the thickness of this fourth layer being comprised between 40 nm and 1 ?m in order to obtain adiabatic coupling between the first and second waveguides, and a fifth layer located directly on the fourth layer, the second waveguide being entirely structured in a III-V gain medium of this fifth layer. The first waveguide comprises a first portion made of semiconductor located inside the third layer and that extends as far as to the interface between the third and fourth layers.
    Type: Application
    Filed: November 18, 2020
    Publication date: May 20, 2021
    Applicant: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Karim HASSAN, Yohan DESIERES
  • Patent number: 10725324
    Abstract: A photonic transmitter is provided, including a laser source including a first waveguide made of silicon and a second waveguide made of III-V gain material, the waveguides being separated from each other by a first segment of a dielectric layer; and a phase modulator including a first electrode made of single-crystal silicon and a second electrode made of III-V crystalline material, separated from each other by a second segment of the dielectric layer, where a thickness of the dielectric layer is between 40 nm and 1 ?m, where a thickness of a dielectric material in an interior of the first segment is equal to the thickness of the dielectric layer, and where a thickness of the dielectric material in an interior of the second segment is between 5 nm and 35 nm, a rest being formed by a thickness of semiconductor material.
    Type: Grant
    Filed: July 22, 2019
    Date of Patent: July 28, 2020
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Karim Hassan, Yohan Desieres, Bertrand Szelag
  • Patent number: 10580931
    Abstract: A method of manufacturing a gallium nitride light-emitting diode, including the successive steps of: a) forming a planar active gallium nitride light-emitting diode stack including first and second doped gallium nitride layers of opposite conductivity types and, between the first and second gallium nitride layers, an emissive layer with one or a plurality of quantum wells; and b) growing nanowires on the surface of the first gallium nitride layer opposite to the emissive layer.
    Type: Grant
    Filed: June 2, 2017
    Date of Patent: March 3, 2020
    Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventors: Ivan-Christophe Robin, Matthew Charles, Yohan Desieres
  • Publication number: 20200026105
    Abstract: A photonic transmitter is provided, including a laser source including a first waveguide made of silicon and a second waveguide made of III-V gain material, the waveguides being separated from each other by a first segment of a dielectric layer; and a phase modulator including a first electrode made of single-crystal silicon and a second electrode made of III-V crystalline material, separated from each other by a second segment of the dielectric layer, where a thickness of the dielectric layer is between 40 nm and 1 ?m, where a thickness of a dielectric material in an interior of the first segment is equal to the thickness of the dielectric layer, and where a thickness of the dielectric material in an interior of the second segment is between 5 nm and 35 nm, a rest being formed by a thickness of semiconductor material.
    Type: Application
    Filed: July 22, 2019
    Publication date: January 23, 2020
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Karim HASSAN, Yohan DESIERES, Bertrand SZELAG
  • Patent number: 10396239
    Abstract: The invention relates to an optoelectronic light-emitting device (1), including: at least one light-emitting diode (40) having an emitting surface (44) adapted to emit so-called excitation luminous radiation; and a photoluminescent material (31) that coats the emitting surface (44), the photoluminescent material containing photoluminescent particles adapted to convert said excitation luminous radiation through the emitting surface (44) at least in part into so-called photoluminescence luminous radiation. The optoelectronic device includes at least one photodiode (50) adjacent the light-emitting diode (40) having a receiving surface (54) coated by the photoluminescent material (31) and adapted to detect at least part of the excitation radiation and/or the photoluminescence radiation coming from the photoluminescent material (31) through the receiving surface.
    Type: Grant
    Filed: December 23, 2016
    Date of Patent: August 27, 2019
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Ivan-Christophe Robin, Hubert Bono, Yohan Desieres
  • Publication number: 20190214523
    Abstract: A method of manufacturing a gallium nitride light-emitting diode, including the successive steps of: a) forming a planar active gallium nitride light-emitting diode stack including first and second doped gallium nitride layers of opposite conductivity types and, between the first and second gallium nitride layers, an emissive layer with one or a plurality of quantum wells; and b) growing nanowires on the surface of the first gallium nitride layer opposite to the emissive layer.
    Type: Application
    Filed: June 2, 2017
    Publication date: July 11, 2019
    Applicant: Commissariat a L'Énergie Atomique et aux Énergies Alternatives
    Inventors: Ivan-Christophe Robin, Matthew Charles, Yohan Desieres
  • Patent number: 10186636
    Abstract: Device successively including a substrate including a metal layer capable of reflecting a radiation; a first layer of a III/N type alloy, p-type doped, and including a first surface, opposite the metal layer, the first surface being provided with cavities; a light-emitting layer made of a III/N-type alloy, capable of generating the radiation; a second layer of a III/N-type alloy, n-type doped, having the radiation coming out therethrough; wherein a non-metallic filling material transparent in the spectral range is arranged within the cavities.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: January 22, 2019
    Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Yohan Desieres
  • Patent number: 10177288
    Abstract: An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.
    Type: Grant
    Filed: March 22, 2018
    Date of Patent: January 8, 2019
    Assignees: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Aledia
    Inventors: Tiphaine Dupont, Yohan Desieres
  • Patent number: 10062818
    Abstract: An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.
    Type: Grant
    Filed: February 7, 2017
    Date of Patent: August 28, 2018
    Assignee: Aledia
    Inventors: Tiphaine Dupont, Yohan Desieres
  • Publication number: 20180219143
    Abstract: An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.
    Type: Application
    Filed: March 22, 2018
    Publication date: August 2, 2018
    Applicant: Aledia
    Inventors: Tiphaine Dupont, Yohan Desieres
  • Publication number: 20170186908
    Abstract: The invention relates to an optoelectronic light-emitting device (1), including: at least one light-emitting diode (40) having an emitting surface (44) adapted to emit so-called excitation luminous radiation; and a photoluminescent material (31) that coats the emitting surface (44), the photoluminescent material containing photoluminescent particles adapted to convert said excitation luminous radiation through the emitting surface (44) at least in part into so-called photoluminescence luminous radiation. The optoelectronic device includes at least one photodiode (50) adjacent the light-emitting diode (40) having a receiving surface (54) coated by the photoluminescent material (31) and adapted to detect at least part of the excitation radiation and/or the photoluminescence radiation coming from the photoluminescent material (31) through the receiving surface.
    Type: Application
    Filed: December 23, 2016
    Publication date: June 29, 2017
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Ivan-Christophe ROBIN, Hubert BONO, Yohan DESIERES
  • Publication number: 20170148960
    Abstract: An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.
    Type: Application
    Filed: February 7, 2017
    Publication date: May 25, 2017
    Applicants: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, ALEDIA
    Inventors: Tiphaine Dupont, Yohan Desieres
  • Patent number: 9601543
    Abstract: An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.
    Type: Grant
    Filed: December 11, 2014
    Date of Patent: March 21, 2017
    Assignees: ALEDIA, Commisariat à l'Énergie et aux Énergies Alternatives
    Inventors: Tiphaine Dupont, Yohan Desieres
  • Publication number: 20170005230
    Abstract: Device successively including a substrate including a metal layer capable of reflecting a radiation; a first layer of a III/N type alloy, p-type doped, and including a first surface, opposite the metal layer, the first surface being provided with cavities; a light-emitting layer made of a III/N-type alloy, capable of generating the radiation; a second layer of a III/N-type alloy, n-type doped, having the radiation coming out therethrough; wherein a non-metallic filling material transparent in the spectral range is arranged within the cavities.
    Type: Application
    Filed: June 30, 2016
    Publication date: January 5, 2017
    Applicant: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Yohan DESIERES
  • Publication number: 20160307960
    Abstract: An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.
    Type: Application
    Filed: December 11, 2014
    Publication date: October 20, 2016
    Applicants: ALEDIA, COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
    Inventors: Tiphaine DUPONT, Yohan DESIERES
  • Patent number: 9412904
    Abstract: A device for back-scattering an incident light ray, including: a host substrate; a structured layer; a first face in contact with a front face of the host substrate; a second flat face parallel to the first face; a first material and a second material which form, in a mixed plane, alternating surfaces at least one of whose dimensions is between 300 nm and 800 nm, the mixed plane is between the first and second face of the structured layer; wherein the refractive index of the first and of the second material are different, the structured layer is covered by a specific layer, the specific layer is made of a material which is different from the first and second materials of the structured layer, and the specific layer is crystalline and semi-conductive.
    Type: Grant
    Filed: January 4, 2013
    Date of Patent: August 9, 2016
    Assignees: Commissariat a l'energie atomique et aux energies alternatives, Soitec
    Inventors: Yohan Desieres, Philippe Gilet, Pascal Guenard