Patents by Inventor Yohan Desieres
Yohan Desieres has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240411158Abstract: A device including, stacked in a vertical direction (z), a silicon-based substrate, a nucleation layer made of a nitride-based refractory material, a lithium niobate-based layer portion, called LNO portion, made of mesa on the nucleation layer, the LNO portion being bordered by a masking layer. The device further includes at least one electrode configured to apply an electric field to the LNO portion. A method for producing such a device, including a formation by localised epitaxy of the LNO portion, is also disclosed.Type: ApplicationFiled: June 3, 2024Publication date: December 12, 2024Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Florian DUPONT, Yohan DESIERES
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Patent number: 11385484Abstract: Photonic transmitter, comprising: a stack of a first layer, second layer and third layer stacked on top of one another, a laser source comprising a first waveguide and a second waveguide. The stack comprises: a fourth layer located on the third layer, the thickness of this fourth layer being comprised between 40 nm and 1 ?m in order to obtain adiabatic coupling between the first and second waveguides, and a fifth layer located directly on the fourth layer, the second waveguide being entirely structured in a III-V gain medium of this fifth layer. The first waveguide comprises a first portion made of semiconductor located inside the third layer and that extends as far as to the interface between the third and fourth layers.Type: GrantFiled: November 18, 2020Date of Patent: July 12, 2022Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Karim Hassan, Yohan Desieres
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Publication number: 20220190026Abstract: A method of manufacturing an emissive screen comprising LEDs, including the steps of: a) depositing a first metal layer on a surface of a control circuit; b) depositing a second metal layer on a surface of an optoelectronic circuit; c) bonding the optoelectronic circuit to the control circuit by direct bonding of the second metal layer to the first metal layer, by aligning the optoelectronic circuit with respect to the control circuit so that different emission cells of the optoelectronic circuit are arranged opposite different metal connection pads of the control circuit; and d) forming, from the surface of the optoelectronic circuit opposite to the control circuit, trenches laterally delimiting each emission cell.Type: ApplicationFiled: March 27, 2020Publication date: June 16, 2022Applicant: Commissariat à I'Énergie Atomique et aux Énergies AlternativesInventors: François Levy, Bernard Aventurier, Yohan Desieres
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Publication number: 20220029071Abstract: The optoelectronic device includes a light-emitting diode configured to emit an electromagnetic radiation at an emission wavelength of the light-emitting diode in the ultraviolet. The optoelectronic device includes an optical device configured to extract photons generated by the light-emitting diode, said optical device being arranged on an emission face of the light-emitting diode, said optical device including transparent particles at the emission wavelength of the light-emitting diode. The optical device includes conversion particles configured to emit, by converting a part of the electromagnetic radiation emitted by the light-emitting diode, an electromagnetic radiation at an emission wavelength of the conversion particles included in the ultraviolet and strictly greater than the emission wavelength of the light-emitting diode.Type: ApplicationFiled: November 26, 2019Publication date: January 27, 2022Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: David VAUFREY, Yohan DESIERES
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Publication number: 20210149228Abstract: Photonic transmitter, comprising: a stack of a first layer, second layer and third layer stacked on top of one another, a laser source comprising a first waveguide and a second waveguide. The stack comprises: a fourth layer located on the third layer, the thickness of this fourth layer being comprised between 40 nm and 1 ?m in order to obtain adiabatic coupling between the first and second waveguides, and a fifth layer located directly on the fourth layer, the second waveguide being entirely structured in a III-V gain medium of this fifth layer. The first waveguide comprises a first portion made of semiconductor located inside the third layer and that extends as far as to the interface between the third and fourth layers.Type: ApplicationFiled: November 18, 2020Publication date: May 20, 2021Applicant: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Karim HASSAN, Yohan DESIERES
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Patent number: 10725324Abstract: A photonic transmitter is provided, including a laser source including a first waveguide made of silicon and a second waveguide made of III-V gain material, the waveguides being separated from each other by a first segment of a dielectric layer; and a phase modulator including a first electrode made of single-crystal silicon and a second electrode made of III-V crystalline material, separated from each other by a second segment of the dielectric layer, where a thickness of the dielectric layer is between 40 nm and 1 ?m, where a thickness of a dielectric material in an interior of the first segment is equal to the thickness of the dielectric layer, and where a thickness of the dielectric material in an interior of the second segment is between 5 nm and 35 nm, a rest being formed by a thickness of semiconductor material.Type: GrantFiled: July 22, 2019Date of Patent: July 28, 2020Assignee: Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Karim Hassan, Yohan Desieres, Bertrand Szelag
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Patent number: 10580931Abstract: A method of manufacturing a gallium nitride light-emitting diode, including the successive steps of: a) forming a planar active gallium nitride light-emitting diode stack including first and second doped gallium nitride layers of opposite conductivity types and, between the first and second gallium nitride layers, an emissive layer with one or a plurality of quantum wells; and b) growing nanowires on the surface of the first gallium nitride layer opposite to the emissive layer.Type: GrantFiled: June 2, 2017Date of Patent: March 3, 2020Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Ivan-Christophe Robin, Matthew Charles, Yohan Desieres
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Publication number: 20200026105Abstract: A photonic transmitter is provided, including a laser source including a first waveguide made of silicon and a second waveguide made of III-V gain material, the waveguides being separated from each other by a first segment of a dielectric layer; and a phase modulator including a first electrode made of single-crystal silicon and a second electrode made of III-V crystalline material, separated from each other by a second segment of the dielectric layer, where a thickness of the dielectric layer is between 40 nm and 1 ?m, where a thickness of a dielectric material in an interior of the first segment is equal to the thickness of the dielectric layer, and where a thickness of the dielectric material in an interior of the second segment is between 5 nm and 35 nm, a rest being formed by a thickness of semiconductor material.Type: ApplicationFiled: July 22, 2019Publication date: January 23, 2020Applicant: Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Karim HASSAN, Yohan DESIERES, Bertrand SZELAG
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Patent number: 10396239Abstract: The invention relates to an optoelectronic light-emitting device (1), including: at least one light-emitting diode (40) having an emitting surface (44) adapted to emit so-called excitation luminous radiation; and a photoluminescent material (31) that coats the emitting surface (44), the photoluminescent material containing photoluminescent particles adapted to convert said excitation luminous radiation through the emitting surface (44) at least in part into so-called photoluminescence luminous radiation. The optoelectronic device includes at least one photodiode (50) adjacent the light-emitting diode (40) having a receiving surface (54) coated by the photoluminescent material (31) and adapted to detect at least part of the excitation radiation and/or the photoluminescence radiation coming from the photoluminescent material (31) through the receiving surface.Type: GrantFiled: December 23, 2016Date of Patent: August 27, 2019Assignee: Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Ivan-Christophe Robin, Hubert Bono, Yohan Desieres
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Publication number: 20190214523Abstract: A method of manufacturing a gallium nitride light-emitting diode, including the successive steps of: a) forming a planar active gallium nitride light-emitting diode stack including first and second doped gallium nitride layers of opposite conductivity types and, between the first and second gallium nitride layers, an emissive layer with one or a plurality of quantum wells; and b) growing nanowires on the surface of the first gallium nitride layer opposite to the emissive layer.Type: ApplicationFiled: June 2, 2017Publication date: July 11, 2019Applicant: Commissariat a L'Énergie Atomique et aux Énergies AlternativesInventors: Ivan-Christophe Robin, Matthew Charles, Yohan Desieres
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Patent number: 10186636Abstract: Device successively including a substrate including a metal layer capable of reflecting a radiation; a first layer of a III/N type alloy, p-type doped, and including a first surface, opposite the metal layer, the first surface being provided with cavities; a light-emitting layer made of a III/N-type alloy, capable of generating the radiation; a second layer of a III/N-type alloy, n-type doped, having the radiation coming out therethrough; wherein a non-metallic filling material transparent in the spectral range is arranged within the cavities.Type: GrantFiled: June 30, 2016Date of Patent: January 22, 2019Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventor: Yohan Desieres
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Patent number: 10177288Abstract: An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.Type: GrantFiled: March 22, 2018Date of Patent: January 8, 2019Assignees: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, AlediaInventors: Tiphaine Dupont, Yohan Desieres
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Patent number: 10062818Abstract: An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.Type: GrantFiled: February 7, 2017Date of Patent: August 28, 2018Assignee: AlediaInventors: Tiphaine Dupont, Yohan Desieres
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Publication number: 20180219143Abstract: An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.Type: ApplicationFiled: March 22, 2018Publication date: August 2, 2018Applicant: AlediaInventors: Tiphaine Dupont, Yohan Desieres
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Publication number: 20170186908Abstract: The invention relates to an optoelectronic light-emitting device (1), including: at least one light-emitting diode (40) having an emitting surface (44) adapted to emit so-called excitation luminous radiation; and a photoluminescent material (31) that coats the emitting surface (44), the photoluminescent material containing photoluminescent particles adapted to convert said excitation luminous radiation through the emitting surface (44) at least in part into so-called photoluminescence luminous radiation. The optoelectronic device includes at least one photodiode (50) adjacent the light-emitting diode (40) having a receiving surface (54) coated by the photoluminescent material (31) and adapted to detect at least part of the excitation radiation and/or the photoluminescence radiation coming from the photoluminescent material (31) through the receiving surface.Type: ApplicationFiled: December 23, 2016Publication date: June 29, 2017Applicant: Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Ivan-Christophe ROBIN, Hubert BONO, Yohan DESIERES
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Publication number: 20170148960Abstract: An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.Type: ApplicationFiled: February 7, 2017Publication date: May 25, 2017Applicants: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, ALEDIAInventors: Tiphaine Dupont, Yohan Desieres
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Patent number: 9601543Abstract: An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.Type: GrantFiled: December 11, 2014Date of Patent: March 21, 2017Assignees: ALEDIA, Commisariat à l'Énergie et aux Énergies AlternativesInventors: Tiphaine Dupont, Yohan Desieres
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Publication number: 20170005230Abstract: Device successively including a substrate including a metal layer capable of reflecting a radiation; a first layer of a III/N type alloy, p-type doped, and including a first surface, opposite the metal layer, the first surface being provided with cavities; a light-emitting layer made of a III/N-type alloy, capable of generating the radiation; a second layer of a III/N-type alloy, n-type doped, having the radiation coming out therethrough; wherein a non-metallic filling material transparent in the spectral range is arranged within the cavities.Type: ApplicationFiled: June 30, 2016Publication date: January 5, 2017Applicant: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventor: Yohan DESIERES
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Publication number: 20160307960Abstract: An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.Type: ApplicationFiled: December 11, 2014Publication date: October 20, 2016Applicants: ALEDIA, COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVESInventors: Tiphaine DUPONT, Yohan DESIERES
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Patent number: 9412904Abstract: A device for back-scattering an incident light ray, including: a host substrate; a structured layer; a first face in contact with a front face of the host substrate; a second flat face parallel to the first face; a first material and a second material which form, in a mixed plane, alternating surfaces at least one of whose dimensions is between 300 nm and 800 nm, the mixed plane is between the first and second face of the structured layer; wherein the refractive index of the first and of the second material are different, the structured layer is covered by a specific layer, the specific layer is made of a material which is different from the first and second materials of the structured layer, and the specific layer is crystalline and semi-conductive.Type: GrantFiled: January 4, 2013Date of Patent: August 9, 2016Assignees: Commissariat a l'energie atomique et aux energies alternatives, SoitecInventors: Yohan Desieres, Philippe Gilet, Pascal Guenard