Patents by Inventor Yohei Oishi

Yohei Oishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190257319
    Abstract: A motor pump capable of preventing deformation of a resin-made motor casing due to heat while securing a mechanical strength of the motor casing is disclosed. The motor pump includes a motor casing made of resin. The motor stator is disposed in the motor casing. The motor casing includes a partition wall located between the impeller and stator coils, ribs extending radially, and an inner frame connected to an inner edge of the partition wall. The partition wall is fixed to the ribs. The motor casing has guide protrusions formed on an outer surface of the inner frame, and further has recesses formed between the guide protrusions.
    Type: Application
    Filed: February 14, 2019
    Publication date: August 22, 2019
    Applicant: Ebara Corporation
    Inventors: Takayuki KURONUMA, Yohei OISHI
  • Publication number: 20190203724
    Abstract: A pump apparatus is provided with a tank in which a handled-fluid having insulating properties is stored, and with a pump that is mounted in the tank. The pump has an impeller in which a magnet is embedded, a motor stator that is disposed at a position opposing the magnet, a pump casing that houses the impeller, and a motor casing that houses the motor stator. The motor casing is open such that a winding of the motor stator is immersed in the handled-fluid.
    Type: Application
    Filed: December 19, 2018
    Publication date: July 4, 2019
    Inventors: Takayuki KURONUMA, Yohei OISHI
  • Patent number: 10262866
    Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: April 16, 2019
    Assignees: International Business Machines Corporation, JSR CORPORATION
    Inventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
  • Publication number: 20180166292
    Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.
    Type: Application
    Filed: January 29, 2018
    Publication date: June 14, 2018
    Inventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
  • Patent number: 9916985
    Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.
    Type: Grant
    Filed: May 20, 2016
    Date of Patent: March 13, 2018
    Assignees: International Business Machines Corporation, JSR CORPORATION
    Inventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
  • Patent number: 9890300
    Abstract: Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is located on a substrate; epitaxially growing a germanium material within the at least one opening of the dielectric layer, the germanium material extending above a topmost surface of the dielectric layer; and planarizing the germanium material using at least one slurry composition to form coplanar surfaces of the germanium material and the dielectric layer, where a slurry composition of at least one slurry composition polishes the germanium material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator, and an oxidizer, the at least one pH modulator including an acidic pH modulator, and lacking a basic pH modulator.
    Type: Grant
    Filed: April 18, 2017
    Date of Patent: February 13, 2018
    Assignees: International Business Machines Corporation, JSR Corporation
    Inventors: Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
  • Publication number: 20170218229
    Abstract: Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is located on a substrate; epitaxially growing a germanium material within the at least one opening of the dielectric layer, the germanium material extending above a topmost surface of the dielectric layer; and planarizing the germanium material using at least one slurry composition to form coplanar surfaces of the germanium material and the dielectric layer, where a slurry composition of at least one slurry composition polishes the germanium material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator, and an oxidizer, the at least one pH modulator including an acidic pH modulator, and lacking a basic pH modulator.
    Type: Application
    Filed: April 18, 2017
    Publication date: August 3, 2017
    Inventors: Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
  • Patent number: 9646841
    Abstract: A chemical mechanical planarization for a Group III arsenide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. A Group III arsenide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The Group III arsenide material is planarized using at least one slurry composition to form coplanar surfaces of the Group III arsenide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the Group III arsenide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of an arsine gas.
    Type: Grant
    Filed: May 20, 2016
    Date of Patent: May 9, 2017
    Assignees: International Business Machines Corporation, JSR Corporation
    Inventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
  • Patent number: 9646842
    Abstract: Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is located on a substrate; epitaxially growing a germanium material within the at least one opening of the dielectric layer, the germanium material extending above a topmost surface of the dielectric layer; and planarizing the germanium material using at least one slurry composition to form coplanar surfaces of the germanium material and the dielectric layer, where a slurry composition of at least one slurry composition polishes the germanium material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator, and an oxidizer, the at least one pH modulator including an acidic pH modulator, and lacking a basic pH modulator.
    Type: Grant
    Filed: May 20, 2016
    Date of Patent: May 9, 2017
    Assignees: International Business Machines Corporation, JSR CORPORATION
    Inventors: Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
  • Publication number: 20170110334
    Abstract: Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is located on a substrate; epitaxially growing a germanium material within the at least one opening of the dielectric layer, the germanium material extending above a topmost surface of the dielectric layer; and planarizing the germanium material using at least one slurry composition to form coplanar surfaces of the germanium material and the dielectric layer, where a slurry composition of at least one slurry composition polishes the germanium material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator, and an oxidizer, the at least one pH modulator including an acidic pH modulator, and lacking a basic pH modulator.
    Type: Application
    Filed: May 20, 2016
    Publication date: April 20, 2017
    Inventors: Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
  • Publication number: 20170110333
    Abstract: A chemical mechanical planarization for a Group III arsenide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. A Group III arsenide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The Group III arsenide material is planarized using at least one slurry composition to form coplanar surfaces of the Group III arsenide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the Group III arsenide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of an arsine gas.
    Type: Application
    Filed: May 20, 2016
    Publication date: April 20, 2017
    Inventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
  • Publication number: 20170110332
    Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.
    Type: Application
    Filed: May 20, 2016
    Publication date: April 20, 2017
    Inventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka