Abstract: The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

Abstract: An imaging lens system includes sequentially from an object side, a first lens group and a second lens group. The second lens group includes a focus lens group configured to move during focusing or the first lens group and the second lens group are divided at a position of a maximum air gap. Conditional Expressions (1) and (2) are satisfied as follows: ?2.0<fL1/f<?0.95, and??(1) 1.7<NdP1Gmin_?d/L1_?d<2.5,??(2) where fL1 is a focal length of a lens located closest to the object side of the first lens group, f is a focal length of a whole system, NdP1Gmin_?d is an Abbe number for a d-line of a positive lens having a smallest refractive index of the first lens group, and L1_?d is an Abbe number for the d-line of the lens located closest to the object side of the first lens group.

Abstract: An imaging lens system includes sequentially from an object side, a first lens group and a second lens group. The second lens group includes a focus lens group configured to move during focusing or the first lens group and the second lens group are divided at a position of a maximum air gap. Conditional Expressions (1) and (2) are satisfied as follows: ?2.0<fL1/f<?0.95, and??(1) 1.7<NdP1Gmin_?d/L1_?d<2.5,??(2) where fL1 is a focal length of a lens located closest to the object side of the first lens group, f is a focal length of a whole system, NdP1Gmin_?d is an Abbe number for a d-line of a positive lens having a smallest refractive index of the first lens group, and L1_?d is an Abbe number for the d-line of the lens located closest to the object side of the first lens group.

Abstract: A zoom lens system includes a positive first lens group, a negative second lens group, a positive third lens group and a positive fourth lens group, in that order from the object side, wherein distances between adjacent lens groups thereof change during zooming. The third lens group includes a positive first sub-lens group, a positive second sub-lens group and a negative third sub-lens group. The third sub-lens group consists of a single negative lens element. The following conditions (1) and (2) are satisfied: 6.0<f1Gp/fw<9.0??(1), and 1.3<f3Gp/f4Gp<2.0??(2), wherein fw designates the focal length of the entire zoom lens system at the short focal length extremity, f1Gp, f3Gp and f4Gp designate the focal lengths of the first, third and fourth lens groups, respectively.

Abstract: A zoom lens system includes a positive first lens group, a negative second lens group, a positive third lens group and a positive fourth lens group, in that order from the object side, wherein distances between adjacent lens groups thereof change during zooming. The third lens group includes a positive first sub-lens group, a positive second sub-lens group and a negative third sub-lens group. The third sub-lens group consists of a single negative lens element. The following conditions (1) and (2) are satisfied: 6.0<f1Gp/fw<9.0??(1), and 1.3<f3Gp/f4Gp<2.0??(2), wherein fw designates the focal length of the entire zoom lens system at the short focal length extremity, f1Gp, f3Gp and f4Gp designate the focal lengths of the first, third and fourth lens groups, respectively.

Abstract: A fixed focal-length lens system includes a negative first lens group, a positive second and third lens groups. The first and second lens groups move toward the object side during focusing from an object at infinity to an object at a close-up distance. The first lens group includes a negative lens element having a concave surface on the image side, at least two positive lens elements, and a negative lens element having a concave surface on the image side. The second lens group includes a negative lens element having a concave surface on the object side, and at least two positive lens elements. The third lens group includes at least one negative lens element, and at least one positive lens element. The following condition (1) is satisfied: ?0.3<fG2/fG1<?0.05??(1), wherein fG1 and fG2 designate the focal lengths of the first and second lens groups.

Abstract: A fixed focal-length lens system includes a negative first lens group, a positive second and third lens groups. The first and second lens groups move toward the object side during focusing from an object at infinity to an object at a close-up distance. The first lens group includes a negative lens element having a concave surface on the image side, at least two positive lens elements, and a negative lens element having a concave surface on the image side. The second lens group includes a negative lens element having a concave surface on the object side, and at least two positive lens elements. The third lens group includes at least one negative lens element, and at least one positive lens element. The following condition (1) is satisfied: ?0.3<fG2/fG1<?0.05??(1), wherein fG1 and fG2 designate the focal lengths of the first and second lens groups.

Abstract: A photographing lens system includes a positive front lens group, an aperture diaphragm, and a positive rear lens group, in that order from the object side. The front lens group includes at least one negative lens element, and at least two positive cemented lenses, in that order from the object side, and the following conditions are satisfied: 0.35<fF/fR<1.5??(1), and ?1.4<fL1/f<?0.9??(2), wherein fF and fR designate the focal lengths of the front lens group and the rear lens group, fL1 designates the combined focal length of the negative lens elements provided within said front lens group; and f designates the focal length of the entire photographing lens system.

Abstract: A photographing lens system includes a positive front lens group, an aperture diaphragm, and a positive rear lens group, in that order from the object side. The front lens group includes at least one negative lens element, and at least two positive cemented lenses, in that order from the object side, and the following conditions are satisfied: 0.35<fF/fR<1.5??(1), and ?1.4<fL1/f<?0.9??(2), wherein fF and fR designate the focal lengths of the front lens group and the rear lens group, fL1 designates the combined focal length of the negative lens elements provided within said front lens group; and f designates the focal length of the entire photographing lens system.

Abstract: The present invention provides a pattern forming method and a pattern formation apparatus capable of suppressing variations in line width dimensions of a resist pattern. The pattern forming method of the present invention is a pattern forming method comprising a first step for coating a photoresist onto a wafer W, a second step for selectively exposing the wafer W coated with the photoresist, a third step for carrying out baking treatment on the exposed wafer W, and a fourth step for carrying out development treatment on the baked wafer W; wherein, in the third step, the baking treatment is carried out by forming a first atmosphere containing at least moisture, and then replacing the first atmosphere and forming a second atmosphere not containing moisture, followed by continuing the baking treatment.

Abstract: A method of forming a resist pattern includes the steps of: forming a photoresist pattern on a wafer by exposure and development of a photoresist film; treating the surface of the photoresist pattern by using a resist solvent; and thermally flowing the treated photoresist pattern for shrinkage. An isotropic shrinkage amount is obtained for the hole pattern including a dense portion and an isolated portion of the holes.

Abstract: A theoretical expression of a workpiece (W) the curved surface of which is measured by a measuring probe (110) equipped with a stylus (111) is specified, a measuring area where the measurement is executed on the measuring surface of the workpiece (W) is determined, and the axis angles of the stylus (111) are determined based on the coordinate values and the normal vector of a representative point determined in the measuring area.

Abstract: Pattern deduction processes of prior art include, after applying a solution reacting with a resist pattern on a surface of the resist pattern, a step of heating a substrate to accelerate the reaction between the resist pattern and the applied film. However, heating for the acceleration of reaction necessarily accompanies conveyance of substrates onto a hot plate. The present invention provides an application apparatus which is provided with a temperature raising means for raising a temperature of the resist pattern reduction material in the vicinity of a nozzle for dropping the resist pattern reduction material.

Abstract: A theoretical expression of a workpiece (W) the curved surface of which is measured by a measuring probe (110) equipped with a stylus (111) is specified, a measuring area where the measurement is executed on the measuring surface of the workpiece (W) is determined, and the axis angles of the stylus (111) are determined based on the coordinate values and the normal vector of a representative point determined in the measuring area.

Abstract: A linear measuring machine is provided, the linear measuring machine having a base (11), a column (12) disposed on the base, a slider (14) elevatable along the column and an elevation driving mechanism (44) including a motor for lifting and lowering the slider. The linear measuring machine further includes a touch-and-back mechanism for driving the elevation driving mechanism in a direction for a probe (13) to move away from a measurement surface of the workpiece after fetching a detection value of a displacement sensor (45) when the probe touches the measurement surface of the workpiece and for stopping the elevation driving mechanism.

Abstract: An electrode is disclosed, comprising an electrically conductive substrate and a shrinkable layer laminated on the substrate, wherein a cut is provided on the electrode so as to form a connection terminal portion projecting outwards upon shrinkage of the shrinkable layer.

Abstract: A biomedical electrode comprising a flexible electrode plate which conforms to the skin surface of a living body, and an electrically conductive adhesive layer which fixes the electrode plate on the skin surface and transmits an electric signal from the living body to said electrode plate, wherein a non-contact area to which said conductive adhesive layer is not substantially bonded is formed on the electrode plate and an electrically conductive tongue for connecting a terminal which takes said electric signal from the living body to a biomedical diagnostic apparatus is provided on the non-contact area by forming cut thereon.

Abstract: A biomedical electrode comprising an electrode plate and an electroconductive material prepared by polymerizing unsaturated monomer containing a phosphoric or phosphorous group.