Abstract: Disclosed are a semiconductor device and a method for preparing a semiconductor device. The semiconductor device is provided with contact pad structures in contact holes. Each of the contact pad structures is configured to comprise a first contact pad, a second contact pad adaptively covering the first contact pad, and a contact plug located on the second contact pad. The first contact pad is in full contact with an active region in a substrate. In addition, an air gap is formed between the first contact pad and a side wall on a side of the respective contact hole.

Abstract: A liquid crystal display panel includes a first substrate and a second substrate facing each other, a liquid crystal layer disposed between the first substrate and the second substrate, and color filters disposed on the first substrate, each color filters respectively configured to transmit light of one of first through fourth colors, in which at least one of the color filters includes at least one column protruding from the first substrate.

Abstract: A liquid crystal display includes a plurality of pixels, a lower substrate and an upper substrate facing each other, a liquid crystal layer disposed between the lower substrate and the upper substrate, a pixel electrode disposed on the lower substrate and including a plurality of sub-regions which differently controls an inclination direction of liquid crystal molecules included in the liquid crystal layer for a pixel of the plurality of pixels, and a gate line disposed on the lower substrate and including a portion which overlaps a boundary between adjacent sub-regions of the plurality of sub-regions of the pixel electrode.

Abstract: A liquid crystal display (LCD) device, including a lower polarizing plate configured to have a transmission axis in a first direction, a liquid crystal layer on the lower polarizing plate, an upper polarizing plate on the liquid crystal layer, the upper polarizing plate including a first polarizing plate and a second polarizing plate, the first polarizing plate having a transmission axis in the first direction, the second polarizing plate having a transmission axis in a second direction perpendicular to the first direction, and color filters including a white filter and a colored filter, the white filter overlapping with the first polarizing plate, and the color filter overlapping with the second polarizing plate.

Abstract: A liquid crystal display is provided. A liquid crystal display includes: a first substrate; a thin film transistor disposed on the first substrate; and a first electrode disposed on the thin film transistor and connected to an output terminal of the thin film transistor, wherein the first electrode includes a first region and a second region each including a plurality of minute branches separated from each other by open parts, portions of at least two minute branches among the plurality of minute branches are connected to form a plurality of minute plate branches, and wherein the minute plate branch has a wider width than a minute branch.

Abstract: A liquid crystal display panel includes a first substrate and a second substrate facing each other, a liquid crystal layer disposed between the first substrate and the second substrate, and color filters disposed on the first substrate, each color filters respectively configured to transmit light of one of first through fourth colors, in which at least one of the color filters includes at least one column protruding from the first substrate.

Abstract: A liquid crystal display (LCD) includes: a liquid crystal panel; a backlight unit for supplying light to the liquid crystal panel; and a wavelength-converting reflector disposed between the liquid crystal panel and the backlight unit. Light reflected from the wavelength-converting reflector has a shorter wavelength as a reflection angle increases.

Abstract: A liquid crystal display (LCD) device, including a lower polarizing plate configured to have a transmission axis in a first direction, a liquid crystal layer on the lower polarizing plate, an upper polarizing plate on the liquid crystal layer, the upper polarizing plate including a first polarizing plate and a second polarizing plate, the first polarizing plate having a transmission axis in the first direction, the second polarizing plate having a transmission axis in a second direction perpendicular to the first direction, and color filters including a white filter and a colored filter, the white filter overlapping with the first polarizing plate, and the color filter overlapping with the second polarizing plate.

Abstract: A manufacturing method for a display panel includes: forming a first display panel including a plurality of pixel electrodes, gate lines and data lines connected to the pixel electrodes, a first pad unit connected to the gate lines, and a second pad unit connected to the data lines; forming a second display panel including a common electrode; forming a first short point connected to the first pad unit; forming a second short point connected to the second pad unit; adhering the first display panel and the second display panel; dividing the second display panel into a plurality of regions insulated from each other, a first region corresponding to the first short point, a second region corresponding to the second short point, and a third region; and applying a first voltage to the first region, a second voltage to the second region, and a third voltage to the third region.

Abstract: A liquid crystal display is provided. A liquid crystal display includes: a first substrate; a thin film transistor disposed on the first substrate; and a first electrode disposed on the thin film transistor and connected to an output terminal of the thin film transistor, wherein the first electrode includes a first region and a second region each including a plurality of minute branches separated from each other by open parts, portions of at least two minute branches among the plurality of minute branches are connected to form a plurality of minute plate branches, and wherein the minute plate branch has a wider width than a minute branch.

Abstract: A liquid crystal display is provided. A liquid crystal display includes: a first substrate; a thin film transistor disposed on the first substrate; and a first electrode disposed on the thin film transistor and connected to an output terminal of the thin film transistor, wherein the first electrode includes a first region and a second region each including a plurality of minute branches separated from each other by open parts, portions of at least two minute branches among the plurality of minute branches are connected to form a plurality of minute plate branches, and wherein the minute plate branch has a wider width than a minute branch.

Abstract: A display device includes: a substrate; a signal line on the substrate; a signal input line on the substrate and connected to a driver; a first insulating layer between the signal line and the signal input line; a second insulating layer on the signal line, the signal input line and the first insulating layer; an organic layer on the second insulating layer; a first contact hole defined in the organic layer, the first insulating layer and the second insulating layer and exposing the signal line; a second contact hole defined in the organic layer and the second insulating layer and exposing the signal input line; and a connecting member on the organic layer, and connecting the signal line and the signal input line to each other through the first contact hole and the second contact hole, respectively.

Abstract: A liquid crystal display includes a plurality of pixels, a lower substrate and an upper substrate facing each other, a liquid crystal layer disposed between the lower substrate and the upper substrate, a pixel electrode disposed on the lower substrate and including a plurality of sub-regions which differently controls an inclination direction of liquid crystal molecules included in the liquid crystal layer for a pixel of the plurality of pixels, and a gate line disposed on the lower substrate and including a portion which overlaps a boundary between adjacent sub-regions of the plurality of sub-regions of the pixel electrode.

Abstract: Optical waveguide and coupler devices and methods include a trench formed in a bulk semiconductor substrate, for example, a bulk silicon substrate. A bottom cladding layer is formed in the trench, and a core region is formed on the bottom cladding layer. A reflective element, such as a distributed Bragg reflector can be formed under the coupler device and/or the waveguide device. Because the optical devices are integrated in a bulk substrate, they can be readily integrated with other devices on a chip or die in accordance with silicon photonics technology. Specifically, for example, the optical devices can be integrated in a DRAM memory circuit chip die.

Abstract: A display device includes: a substrate; a signal line on the substrate; a signal input line on the substrate and connected to a driver; a first insulating layer between the signal line and the signal input line; a second insulating layer on the signal line, the signal input line and the first insulating layer; an organic layer on the second insulating layer; a first contact hole defined in the organic layer, the first insulating layer and the second insulating layer and exposing the signal line; a second contact hole defined in the organic layer and the second insulating layer and exposing the signal input line; and a connecting member on the organic layer, and connecting the signal line and the signal input line to each other through the first contact hole and the second contact hole, respectively.

Abstract: A liquid crystal display is provided. A liquid crystal display includes: a first substrate; a thin film transistor disposed on the first substrate; and a first electrode disposed on the thin film transistor and connected to an output terminal of the thin film transistor, wherein the first electrode includes a first region and a second region each including a plurality of minute branches separated from each other by open parts, portions of at least two minute branches among the plurality of minute branches are connected to form a plurality of minute plate branches, and wherein the minute plate branch has a wider width than a minute branch.

Abstract: A method of manufacturing a non-volatile memory device is provided. The method includes forming isolation patterns defining an active region on a substrate, forming a floating gate pattern on the active region, and forming a gate line on the floating gate pattern. The floating gate pattern is self-aligned on the active region and has an impurity ion concentration that becomes relatively low as the floating gate pattern gets nearer to the active region.

Abstract: A manufacturing method for a display panel includes: forming a first display panel including a plurality of pixel electrodes, gate lines and data lines connected to the pixel electrodes, a first pad unit connected to the gate lines, and a second pad unit connected to the data lines; forming a second display panel including a common electrode; forming a first short point connected to the first pad unit; forming a second short point connected to the second pad unit; adhering the first display panel and the second display panel; dividing the second display panel into a plurality of regions insulated from each other, a first region corresponding to the first short point, a second region corresponding to the second short point, and a third region; and applying a first voltage to the first region, a second voltage to the second region, and a third voltage to the third region.

Abstract: A method of forming a vertical diode and a method of manufacturing a semiconductor device (e.g., a semiconductor memory device such as a phase-change memory device) includes forming an insulating structure having an opening on a substrate and filling the opening with an amorphous silicon layer. A metal silicide layer is formed to contact at least a portion of the amorphous silicon layer and a polysilicon layer is then formed in the opening by crystallizing the amorphous silicon layer using the metal silicide layer. A doped polysilicon layer is formed by implanting impurities into the polysilicon layer. Thus, the polysilicon layer is formed in the opening without performing a selective epitaxial growth (SEG) process, so that electrical characteristics of the diode may be improved.

Abstract: A semiconductor device may include a tunnel insulating layer disposed on an active region of a substrate, field insulating patterns disposed in surface portions of the substrate to define the active region, each of the field insulating patterns having an upper recess formed at an upper surface portion thereof, a stacked structure disposed on the tunnel insulating layer, and impurity diffusion regions disposed at surface portions of the active region adjacent to the stacked structure.