Patents by Inventor Yoo Sam Na

Yoo Sam Na has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210242892
    Abstract: A front-end module includes: a substrate including a first connection member in which at least one first insulating layer and at least one first wiring layer are alternately stacked, a second connection member in which at least one second insulating layer and at least one second wiring layer are alternately stacked, and a core member disposed between the first and second connection members; a radio-frequency component mounted on a surface of the substrate and configured to amplify a main band of an input RF signal or filter bands outside the main band; an inductor disposed on a surface of the core member and electrically connected to the radio-frequency component; and a ground plane disposed on another surface of the core member. The core member includes a core insulating layer thicker than an insulating layer among at least one first insulating layer and the at least one second insulating layer.
    Type: Application
    Filed: July 20, 2020
    Publication date: August 5, 2021
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Kang Ta JO, Seong Jong CHEON, Se Jong KIM, Ho Taek SONG, Jang Ho PARK, Yoo Sam NA, Jae Hyouck CHOI, Young Sik HUR
  • Publication number: 20210143525
    Abstract: A radio-frequency device includes a radio-frequency module. The radio-frequency module includes a first substrate, a second substrate, a radio-frequency integrated circuit (RFIC), a front-end integrated circuit (FEIC), and a flexible substrate. The RFIC has at least a portion surrounded by a first core member and is configured to input or output a base signal and a first radio-frequency (RF) signal having a frequency higher than a frequency of the base signal. The FEIC has at least a portion surrounded by a second core member and is configured to input or output the first RF signal and a second RF signal having a power different from a power of the first RF signal. The flexible substrate is configured to connect the first and second substrates to each other, provide a transmission path for the first RF signal, and being more flexible than the first and second substrates.
    Type: Application
    Filed: July 24, 2020
    Publication date: May 13, 2021
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hak Gu KIM, Young Sik HUR, Yoo Sam NA, Won Gi KIM, Young Bal KIM, Soo Ki CHOI, Ho Kyung KANG, Young Kyoon IM, Seong Jong CHEON
  • Patent number: 10979007
    Abstract: An amplifying device includes: an amplifying circuit connected between an input terminal and an output terminal and amplifying a signal input in an amplification mode; and a bypass circuit including a filter connected to a bypass path for bypassing the amplifying circuit, wherein the bypass path is in an off-state in the amplification mode and is in an on-state in a bypass mode, and the filter bypasses an input high-frequency signal to ground, in the amplification mode.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: April 13, 2021
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hyung Jun Cho, Hyun Jin Yoo, Jong Mo Lim, Hyun Hwan Yoo, Yoo Sam Na, Yoo Hwan Kim
  • Patent number: 10903799
    Abstract: An amplifying apparatus includes a variable gain amplifying circuit configured to operate in a gain mode selected from a plurality of gain modes in response to a first control signal during operation in an amplification mode, a variable attenuation circuit configured to have an attenuation value that is adjusted in response to a second control signal, and a phase compensation value which compensates for a phase distortion in the selected gain mode, and a control circuit configured to control the selecting of the gain mode, the adjusting of the attenuation value and the phase compensation value, based on the first and second control signals.
    Type: Grant
    Filed: October 24, 2018
    Date of Patent: January 26, 2021
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hyun Jin Yoo, Jong Mo Lim, Yoo Sam Na, Hyung Jun Cho, Yoo Hwan Kim, Hyun Hwan Yoo
  • Patent number: 10903836
    Abstract: A radio-frequency switch includes a first series switch including a plurality of series field-effect transistors (FETs) connected in series between a first terminal and a second terminal, a first shunt switch including a plurality of shunt FETs connected in series between the first terminal and a first ground terminal, and a first shunt gate resistor circuit including a plurality of gate resistors respectively connected to gates of the plurality of shunt FETs of the first shunt switch. Respective resistance values of the plurality of gate resistors of the first shunt gate resistor circuit successively increase in a direction away from the first ground terminal toward the first terminal.
    Type: Grant
    Filed: March 27, 2020
    Date of Patent: January 26, 2021
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Byeong Hak Jo, Yoo Sam Na, Hyun Paek, Sol A Kim, Jeong Hoon Kim, Jong Mo Lim
  • Patent number: 10886058
    Abstract: An inductor includes a substrate, and a first coil pattern disposed on one surface of the substrate and having a spiral shape comprising a plurality of turns, wherein as the first coil pattern extends inwardly towards a center of the first coil pattern, a pattern width of the first coil pattern decreases while a center-to-center distance between two adjacent turns of the first coil pattern increases.
    Type: Grant
    Filed: July 24, 2019
    Date of Patent: January 5, 2021
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hyung Jun Cho, Jong Mo Lim, Hyun Hwan Yoo, Hyun Jin Yoo, Yoo Hwan Kim, Yoo Sam Na
  • Publication number: 20200403613
    Abstract: A radio-frequency switch includes a first series switch including a plurality of series field-effect transistors (FETs) connected in series between a first terminal and a second terminal, a first shunt switch including a plurality of shunt FETs connected in series between the first terminal and a first ground terminal, and a first shunt gate resistor circuit including a plurality of gate resistors respectively connected to gates of the plurality of shunt FETs of the first shunt switch. Respective resistance values of the plurality of gate resistors of the first shunt gate resistor circuit successively increase in a direction away from the first ground terminal toward the first terminal.
    Type: Application
    Filed: March 27, 2020
    Publication date: December 24, 2020
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Byeong Hak JO, Yoo Sam NA, Hyun PAEK, Sol A KIM, Jeong Hoon KIM, Jong Mo LIM
  • Patent number: 10826442
    Abstract: An apparatus includes an amplifying circuit configured to include stacked first and second transistors, and to amplify a signal input from an input terminal during an operation in an amplifying mode, and provide the amplified signal to an output terminal, and a negative feedback circuit comprising first to nth sub-negative feedback circuits, each corresponding to a separate gain mode included in the amplifying mode, wherein the negative feedback circuit is configured to provide a variable resistance value to determine a negative feedback gain based on each of the separate gain modes.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: November 3, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hyun Jin Yoo, Jong Mo Lim, Yoo Hwan Kim, Hyung Jun Cho, Hyun Hwan Yoo, Yoo Sam Na
  • Patent number: 10826151
    Abstract: A directional coupler circuit includes a signal line disposed between a first terminal and a second terminal; a coupling line comprising a first end terminal and a second end terminal, and disposed to be coupled to the signal line; a switching circuit connecting the first end terminal and a coupling port to each other to extract a first coupling signal in a first coupling mode, and connecting the second end terminal and the coupling port to extract a second coupling signal in a second coupling mode; and a phase compensating circuit configured to compensate for a phase difference between the coupling port and a first isolation port in the first coupling mode, or compensate for a phase difference between the coupling port and a second isolation port in the second coupling mode.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: November 3, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jong Mo Lim, Yoo Sam Na, Hyun Hwan Yoo, Hyun Jin Yoo, Hyung Jun Cho, Yoo Hwan Kim
  • Patent number: 10778175
    Abstract: A coupler circuit includes: a signal line disposed between a first terminal and a second terminal; a coupling line disposed between a coupling port and an isolation port such that the coupling line is coupled to the signal line and is configured to extract a coupling signal from the signal line; and a coupling adjusting circuit connected to the coupling port and the isolation port, and configured to reduce changes in an amount of coupling according to a change in a frequency band of a signal passing through the signal line.
    Type: Grant
    Filed: October 26, 2018
    Date of Patent: September 15, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jong Mo Lim, Hyun Jin Yoo, Yoo Sam Na, Hyun Hwan Yoo, Hyung Jun Cho, Yoo Hwan Kim
  • Publication number: 20200227201
    Abstract: An inductor includes a substrate, and a first coil pattern disposed on one surface of the substrate and having a spiral shape comprising a plurality of turns, wherein as the first coil pattern extends inwardly towards a center of the first coil pattern, a pattern width of the first coil pattern decreases while a center-to-center distance between two adjacent turns of the first coil pattern increases.
    Type: Application
    Filed: July 24, 2019
    Publication date: July 16, 2020
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hyung Jun CHO, Jong Mo LIM, Hyun Hwan YOO, Hyun Jin YOO, Yoo Hwan KIM, Yoo Sam NA
  • Patent number: 10686413
    Abstract: A low noise amplifier circuit includes a first low noise amplifier including a common gate structure cascoded with a parallel common source structure to selectively amplify a band signal among first and second band signals; a second low noise amplifier including a common gate structure cascoded with a parallel common source structure to selectively amplify a band signal among third and fourth band signals; an output DPDT circuit including a first input terminal connected to the first low noise amplifier, a second input terminal connected to the second low noise amplifier, and a first output terminal and a second output terminal for selectively outputting signals input through the first input terminal and the second input terminal; and a control circuit performing an amplification control and a switching control for the first and second low noise amplifiers and the output DPDT circuit in response to a predetermined communications scheme.
    Type: Grant
    Filed: October 22, 2018
    Date of Patent: June 16, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hyun Hwan Yoo, Jong Mo Lim, Yoo Sam Na, Hyun Jin Yoo, Hyung Jun Cho, Yoo Hwan Kim
  • Publication number: 20200119424
    Abstract: A directional coupler circuit includes a signal line disposed between a first terminal and a second terminal; a coupling line comprising a first end terminal and a second end terminal, and disposed to be coupled to the signal line; a switching circuit connecting the first end terminal and a coupling port to each other to extract a first coupling signal in a first coupling mode, and connecting the second end terminal and the coupling port to extract a second coupling signal in a second coupling mode; and a phase compensating circuit configured to compensate for a phase difference between the coupling port and a first isolation port in the first coupling mode, or compensate for a phase difference between the coupling port and a second isolation port in the second coupling mode.
    Type: Application
    Filed: May 24, 2019
    Publication date: April 16, 2020
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jong Mo LIM, Yoo Sam NA, Hyun Hwan YOO, Hyun Jin YOO, Hyung Jun CHO, Yoo Hwan KIM
  • Publication number: 20200059210
    Abstract: An amplifying device includes: an amplifying circuit connected between an input terminal and an output terminal and amplifying a signal input in an amplification mode; and a bypass circuit including a filter connected to a bypass path for bypassing the amplifying circuit, wherein the bypass path is in an off-state in the amplification mode and is in an on-state in a bypass mode, and the filter bypasses an input high-frequency signal to ground, in the amplification mode.
    Type: Application
    Filed: February 22, 2019
    Publication date: February 20, 2020
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hyung Jun CHO, Hyun Jin Yoo, Jong Mo Lim, Hyun Hwan Yoo, Yoo Sam Na, Yoo Hwan Kim
  • Patent number: 10505517
    Abstract: A radio frequency switch circuit is described including a radio frequency switch and a coupler. The radio frequency switch includes a first band switch circuit connected between a first signal port and a common port, and configured to switch a first band signal. The coupler includes a first coupling wiring, disposed adjacent to a signal wiring formed between the common port of the radio frequency switch and an antenna port, and configured to form a first coupling signal with the signal wiring. A resonant frequency of the first coupling wiring is based on an inductance of the first coupling wiring and a capacitance of the radio frequency switch.
    Type: Grant
    Filed: July 6, 2018
    Date of Patent: December 10, 2019
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Yoo Sam Na, Jong Mo Lim, Yoo Hwan Kim, Hyun Hwan Yoo, Hyun Jin Yoo, Seong Jong Cheon
  • Patent number: 10505579
    Abstract: A radio frequency switching device includes a switching circuit including first and second transistors; a gate resistor circuit including a first gate resistor and a second gate resistor, the first gate resistor connected to a gate of the first transistor and the second gate resistor connected to a gate of the second transistor; a gate buffer circuit including a first gate buffer and a second gate buffer, the first gate buffer being connected to the first gate resistor to provide a first gate signal to the first transistor through the first gate resistor, the second gate buffer being connected to the second gate resistor to provide a second gate signal to the second transistor through the second gate resistor; and a delay circuit to generate the first gate signal having a first switching time and the second gate signal having a second switching time different than the first switching time.
    Type: Grant
    Filed: January 2, 2019
    Date of Patent: December 10, 2019
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Byeong Hak Jo, Hyun Paek, Jeong Hoon Kim, Yoo Hwan Kim, Yoo Sam Na
  • Publication number: 20190363680
    Abstract: An amplifying apparatus includes a variable gain amplifying circuit configured to operate in a gain mode selected from a plurality of gain modes in response to a first control signal during operation in an amplification mode, a variable attenuation circuit configured to have an attenuation value that is adjusted in response to a second control signal, and a phase compensation value which compensates for a phase distortion in the selected gain mode, and a control circuit configured to control the selecting of the gain mode, the adjusting of the attenuation value and the phase compensation value, based on the first and second control signals.
    Type: Application
    Filed: October 24, 2018
    Publication date: November 28, 2019
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hyun Jin YOO, Jong Mo LIM, Yoo Sam NA, Hyung Jun CHO, Yoo Hwan KIM, Hyun Hwan YOO
  • Publication number: 20190348961
    Abstract: A coupler circuit includes: a signal line disposed between a first terminal and a second terminal; a coupling line disposed between a coupling port and an isolation port such that the coupling line is coupled to the signal line and is configured to extract a coupling signal from the signal line; and a coupling adjusting circuit connected to the coupling port and the isolation port, and configured to reduce changes in an amount of coupling according to a change in a frequency band of a signal passing through the signal line.
    Type: Application
    Filed: October 26, 2018
    Publication date: November 14, 2019
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jong Mo LIM, Hyun Jin YOO, Yoo Sam NA, Hyun Hwan YOO, Hyung Jun CHO, Yoo Hwan KIM
  • Publication number: 20190341891
    Abstract: An apparatus includes an amplifying circuit configured to include stacked first and second transistors, and to amplify a signal input from an input terminal during an operation in an amplifying mode, and provide the amplified signal to an output terminal, and a negative feedback circuit comprising first to nth sub-negative feedback circuits, each corresponding to a separate gain mode included in the amplifying mode, wherein the negative feedback circuit is configured to provide a variable resistance value to determine a negative feedback gain based on each of the separate gain modes.
    Type: Application
    Filed: November 20, 2018
    Publication date: November 7, 2019
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hyun Jin YOO, Jong Mo LIM, Yoo Hwan KIM, Hyung Jun CHO, Hyun Hwan YOO, Yoo Sam NA
  • Publication number: 20190334488
    Abstract: A low noise amplifier circuit includes a first low noise amplifier including a common gate structure cascoded with a parallel common source structure to selectively amplify a band signal among first and second band signals; a second low noise amplifier including a common gate structure cascoded with a parallel common source structure to selectively amplify a band signal among third and fourth band signals; an output DPDT circuit including a first input terminal connected to the first low noise amplifier, a second input terminal connected to the second low noise amplifier, and a first output terminal and a second output terminal for selectively outputting signals input through the first input terminal and the second input terminal; and a control circuit performing an amplification control and a switching control for the first and second low noise amplifiers and the output DPDT circuit in response to a predetermined communications scheme.
    Type: Application
    Filed: October 22, 2018
    Publication date: October 31, 2019
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hyun Hwan YOO, Jong Mo LIM, Yoo Sam NA, Hyun Jin YOO, Hyung Jun CHO, Yoo Hwan KIM