Patents by Inventor Yorito Sakano

Yorito Sakano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9490373
    Abstract: There is provided a solid-state imaging device including a pixel array portion in which multiple unit pixels are arranged on a semiconductor substrate, the multiple unit pixels each including a photoelectric conversion portion generating and accumulating a light charge based on a quantity of received light and a charge accumulation portion accumulating the light charge, wherein at least part of an electrode closer to an incidence side on which light enters the unit pixel of the charge accumulation portion, is formed with a metal film functioning as a light blocking film.
    Type: Grant
    Filed: January 24, 2013
    Date of Patent: November 8, 2016
    Assignee: Sony Corporation
    Inventors: Yorito Sakano, Itaru Oshiyama, Yuki Miyanami, Takeshi Takeda
  • Publication number: 20160260757
    Abstract: There is provided a solid-state image sensor including pixels each at least including light receiving parts receiving light to generate charge, a transfer part transferring the charge accumulated in the light receiving parts, and memory parts holding the charge transferred via the transfer part, and a predetermined number of elements shared by the plurality of pixels, the predetermined number of elements being for outputting a pixel signal at a level corresponding to the charge, wherein one or some of the plurality of pixels is/are a correction pixel(s) outputting a correction pixel signal used for correcting a pixel signal outputted from pixels other than the one or some of the plurality of pixels, and one or some of the predetermined number of elements is/are formed on a wiring layer side of the light receiving parts included in the correction pixel(s).
    Type: Application
    Filed: April 22, 2016
    Publication date: September 8, 2016
    Inventor: Yorito Sakano
  • Publication number: 20160254305
    Abstract: A solid-state imaging device includes a photoelectric conversion section configured to generate photocharges and a transfer gate that transfers the photocharges to a semiconductor region. A method for driving a unit pixel includes a step of accumulating photocharges in a photoelectric conversion section and a step of accumulating the photocharges in a semiconductor region. A method of forming a solid-state imaging device includes implanting ions into a well layer through an opening in a mask, implanting additional ions into the well layer through an opening in another mask, and implanting other ions into the well layer through an opening in yet another mask. An electronic device includes the solid-state imaging device.
    Type: Application
    Filed: February 25, 2016
    Publication date: September 1, 2016
    Inventors: Yorito SAKANO, Keiji MABUCHI, Takashi MACHIDA
  • Publication number: 20160163748
    Abstract: A pixel circuit includes a floating diffusion layer of a first conductivity-type between a drain/source of a second conductivity-type and a source/drain of the second conductivity-type. The source/drain and the drain/source touch the floating diffusion layer. A cathode of a photoelectric converter is electrically connected to the floating diffusion layer. An anode of the photoelectric converter touches the cathode. The cathode is of the first conductivity-type and the anode is of the second conductivity-type.
    Type: Application
    Filed: July 17, 2014
    Publication date: June 9, 2016
    Inventor: Yorito SAKANO
  • Patent number: 9293503
    Abstract: A solid-state imaging device includes a photoelectric conversion section configured to generate photocharges and a transfer gate that transfers the photocharges to a semiconductor region. A method for driving a unit pixel includes a step of accumulating photocharges in a photoelectric conversion section and a step of accumulating the photocharges in a semiconductor region. A method of forming a solid-state imaging device includes implanting ions into a well layer through an opening in a mask, implanting additional ions into the well layer through an opening in another mask, and implanting other ions into the well layer through an opening in yet another mask. An electronic device includes the solid-state imaging device.
    Type: Grant
    Filed: July 5, 2012
    Date of Patent: March 22, 2016
    Assignee: SONY CORPORATION
    Inventors: Yorito Sakano, Keiji Mabuchi, Takashi Machida
  • Publication number: 20160044264
    Abstract: A photoelectric conversion element that generates charges according to a light quantity of incident light and accumulates the charges in the inside thereof, a transfer transistor (TRG) that transfers the charges accumulated by the photoelectric conversion element, a first charge voltage conversion section that converts the charges transferred by the transfer transistor (TRG) into a voltage, and a substrate electrode of a MOS capacitor (a region of a second charge voltage conversion section facing a gate electrode) that connects the first charge voltage conversion section via a connection transistor (FDG). The gate electrode of the MOS capacitor is applied with a voltage that is different in a read period of the voltage signal converted by the first charge voltage conversion section and in a period other than the read period. The present disclosure can also be applied to a CMOS image sensor or the like.
    Type: Application
    Filed: March 26, 2014
    Publication date: February 11, 2016
    Applicant: Sony Corporation
    Inventor: Yorito SAKANO
  • Publication number: 20150333101
    Abstract: A solid-state imaging device including a semiconductor layer including a photoelectric conversion section receiving incident light and generating a signal charge; and a light absorbing section for absorbing transmitted light transmitted by the photoelectric conversion section and having a longer wavelength than light absorbed by the photoelectric conversion section, the transmitted light being included in the incident light, the light absorbing section being disposed on a side of another surface of the semiconductor layer on an opposite side from one surface of the semiconductor layer, the incident light being made incident on the one surface of the semiconductor layer.
    Type: Application
    Filed: July 29, 2015
    Publication date: November 19, 2015
    Inventor: Yorito Sakano
  • Patent number: 9143712
    Abstract: There is provided a solid state imaging device including a photoelectric conversion unit that performs photoelectric conversion of converting incident light into charges and accumulates the charges, a charge-voltage conversion unit that converts the charges which have been subjected to the photoelectric conversion by the photoelectric conversion unit into a voltage, a charge transfer unit that transfers charges to the charge-voltage conversion unit, a charge reset unit that resets charges of the charge-voltage conversion unit, and a driving unit that performs driving such that a potential of a drain of the charge reset unit is controlled so that the charges are accumulated in the photoelectric conversion unit and the charge-voltage conversion unit up to a saturation level, and then the photoelectric conversion unit is subject to light exposure.
    Type: Grant
    Filed: August 16, 2013
    Date of Patent: September 22, 2015
    Assignee: Sony Corporation
    Inventor: Yorito Sakano
  • Patent number: 9136420
    Abstract: Disclosed herein is a solid-state imaging device including: a semiconductor layer including a photoelectric conversion section receiving incident light and generating a signal charge; and a light absorbing section for absorbing transmitted light transmitted by the photoelectric conversion section and having a longer wavelength than light absorbed by the photoelectric conversion section, the transmitted light being included in the incident light, the light absorbing section being disposed on a side of another surface of the semiconductor layer on an opposite side from one surface of the semiconductor layer, the incident light being made incident on the one surface of the semiconductor layer.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: September 15, 2015
    Assignee: SONY CORPORATION
    Inventor: Yorito Sakano
  • Patent number: 9117728
    Abstract: A solid-state imaging device includes a plurality of photoelectric conversion units configured to receive light and generate signal charge, the plurality of photoelectric conversion units being provided in such a manner as to correspond to a plurality of pixels in a pixel area of a semiconductor substrate; and pixel transistors configured to output the signal charge generated by the photoelectric conversion units as electrical signals. Each of the pixel transistors includes at least a transfer transistor that transfers the signal charge generated in the photoelectric conversion unit to a floating diffusion corresponding to a drain. A gate electrode of the transfer transistor is formed in such a manner as to extend with a gate insulating film in between from a channel formed area to a portion where the photoelectric conversion unit has been formed on the surface of the semiconductor substrate.
    Type: Grant
    Filed: May 7, 2014
    Date of Patent: August 25, 2015
    Assignee: SONY CORPORATION
    Inventors: Yorito Sakano, Keiji Mabuchi
  • Publication number: 20150237272
    Abstract: A CMOS image sensor has an image array as a matrix of unit pixels each including at least a photodiode, a memory for holding a charge stored in the photodiode, a floating diffusion region for converting the charge in the memory into a voltage, a first transfer gate for transferring the charge from the photodiode to the memory, a second transfer gate for transferring the charge from the memory to the floating diffusion region, and a resetting transistor for resetting the charge in the floating diffusion region. The unit pixels are driven to set the potential of a potential barrier at a boundary between the memory and the floating diffusion region to a potential such that a charge overflowing the memory is transferred to the floating diffusion region, when the first transfer gate is turned on. The CMOS image sensor operates in a global shutter mode for capturing moving images.
    Type: Application
    Filed: May 4, 2015
    Publication date: August 20, 2015
    Inventors: Yusuke Oike, Yorito Sakano, Keiji Mabuchi
  • Patent number: 9054009
    Abstract: A CMOS image sensor has an image array as a matrix of unit pixels each including at least a photodiode, a memory for holding a charge stored in the photodiode, a floating diffusion region for converting the charge in the memory into a voltage, a first transfer gate for transferring the charge from the photodiode to the memory, a second transfer gate for transferring the charge from the memory to the floating diffusion region, and a resetting transistor for resetting the charge in the floating diffusion region. The unit pixels are driven to set the potential of a potential barrier at a boundary between the memory and the floating diffusion region to a potential such that a charge overflowing the memory is transferred to the floating diffusion region, when the first transfer gate is turned on. The CMOS image sensor operates in a global shutter mode for capturing moving images.
    Type: Grant
    Filed: December 6, 2011
    Date of Patent: June 9, 2015
    Assignee: SONY CORPORATION
    Inventors: Yusuke Oike, Yorito Sakano, Keiji Mabuchi
  • Publication number: 20150041871
    Abstract: A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.
    Type: Application
    Filed: September 22, 2014
    Publication date: February 12, 2015
    Inventors: Yorito Sakano, Takashi Abe, Keiji Mabuchi, Ryoji Suzuki, Hiroyuki Mori, Yoshiharu Kudoh, Fumihiko Koga, Takeshi Yanagita, Kazunobu Ota
  • Patent number: 8917341
    Abstract: A solid-state imaging device with a photodiode, a first charge accumulation region electronically connected to the photodiode, a second charge accumulation region electronically connected to the photodiode, where a charge generated in the photodiode is distributed into the first charge accumulation region and the second charge accumulation region based on an amount of charge.
    Type: Grant
    Filed: February 15, 2011
    Date of Patent: December 23, 2014
    Assignee: Sony Corporation
    Inventors: Yorito Sakano, Keiji Mabuchi
  • Patent number: 8872953
    Abstract: A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.
    Type: Grant
    Filed: October 22, 2010
    Date of Patent: October 28, 2014
    Assignee: Sony Corporation
    Inventors: Yorito Sakano, Takashi Abe, Keiji Mabuchi, Ryoji Suzuki, Hiroyuki Mori, Yoshiharu Kudoh, Fumihiko Koga, Takeshi Yanagita, Kazunobu Ota
  • Publication number: 20140242745
    Abstract: A solid-state imaging device includes a plurality of photoelectric conversion units configured to receive light and generate signal charge, the plurality of photoelectric conversion units being provided in such a manner as to correspond to a plurality of pixels in a pixel area of a semiconductor substrate; and pixel transistors configured to output the signal charge generated by the photoelectric conversion units as electrical signals. Each of the pixel transistors includes at least a transfer transistor that transfers the signal charge generated in the photoelectric conversion unit to a floating diffusion corresponding to a drain. A gate electrode of the transfer transistor is formed in such a manner as to extend with a gate insulating film in between from a channel formed area to a portion where the photoelectric conversion unit has been formed on the surface of the semiconductor substrate.
    Type: Application
    Filed: May 7, 2014
    Publication date: August 28, 2014
    Applicant: Sony Corporation
    Inventors: Yorito Sakano, Keiji Mabuchi
  • Patent number: 8785834
    Abstract: There is provided a solid-state image sensor including a plurality of unit pixels each including a photoelectric transducer generating a charge corresponding to an amount of incident light and accumulating the charge therein, a first transfer gate transferring the charge accumulated in the photoelectric transducer, a charge holding region where the charge is held, a second transfer gate transferring the charge, a floating diffusion region where the charge is held to be read out as a signal, a charge discharging gate transferring the charge to a charge discharging part, and a structure including an overflow path formed in a boundary portion between the photoelectric transducer and the charge holding region.
    Type: Grant
    Filed: August 7, 2013
    Date of Patent: July 22, 2014
    Assignee: Sony Corporation
    Inventor: Yorito Sakano
  • Patent number: 8754452
    Abstract: A solid-state imaging device includes a plurality of photoelectric conversion units configured to receive light and generate signal charge, the plurality of photoelectric conversion units being provided in such a manner as to correspond to a plurality of pixels in a pixel area of a semiconductor substrate; and pixel transistors configured to output the signal charge generated by the photoelectric conversion units as electrical signals. Each of the pixel transistors includes at least a transfer transistor that transfers the signal charge generated in the photoelectric conversion unit to a floating diffusion corresponding to a drain. A gate electrode of the transfer transistor is formed in such a manner as to extend with a gate insulating film in between from a channel formed area to a portion where the photoelectric conversion unit has been formed on the surface of the semiconductor substrate.
    Type: Grant
    Filed: November 10, 2010
    Date of Patent: June 17, 2014
    Assignee: Sony Corporation
    Inventors: Yorito Sakano, Keiji Mabuchi
  • Publication number: 20140084143
    Abstract: A solid-state imaging device includes a photoelectric conversion section configured to generate photocharges and a transfer gate that transfers the photocharges to a semiconductor region. A method for driving a unit pixel includes a step of accumulating photocharges in a photoelectric conversion section and a step of accumulating the photocharges in a semiconductor region. A method of forming a solid-state imaging device includes implanting ions into a well layer through an opening in a mask, implanting additional ions into the well layer through an opening in another mask, and implanting other ions into the well layer through an opening in yet another mask. An electronic device includes the solid-state imaging device.
    Type: Application
    Filed: July 5, 2012
    Publication date: March 27, 2014
    Applicant: SONY CORPORATION
    Inventors: Yorito Sakano, Keiji Mabuchi, Takashi Machida
  • Publication number: 20140077059
    Abstract: There is provided a solid state imaging device including a photoelectric conversion unit that performs photoelectric conversion of converting incident light into charges and accumulates the charges, a charge-voltage conversion unit that converts the charges which have been subjected to the photoelectric conversion by the photoelectric conversion unit into a voltage, a charge transfer unit that transfers charges to the charge-voltage conversion unit, a charge reset unit that resets charges of the charge-voltage conversion unit, and a driving unit that performs driving such that a potential of a drain of the charge reset unit is controlled so that the charges are accumulated in the photoelectric conversion unit and the charge-voltage conversion unit up to a saturation level, and then the photoelectric conversion unit is subject to light exposure.
    Type: Application
    Filed: August 16, 2013
    Publication date: March 20, 2014
    Applicant: SONY CORPORATION
    Inventor: Yorito Sakano