Abstract: An insulating film material for plasma CVD represented by a chemical formula (1) shown below, a method of film formation using the insulating film material, and an insulating film. According to the present invention, an insulating film having a low dielectric constant and a superior copper diffusion barrier property suitable for an interlayer insulating film or the like of a semiconductor device can be obtained. In the chemical formula (1), n represents an integer of 3 to 6, and each of R1 and R2 independently represents one of C2H, C2H3, C3H3, C3H5, C3H7, C4H5, C4H7, C4H9, C5H7, C5H9 and C5H11.

Abstract: An insulating film material for plasma CVD of the present invention is constituted of a silicon compound including two hydrocarbon groups bonded to each other to form a ring structure together with a silicon atom, or at least one branched hydrocarbon group, wherein within the branched hydrocarbon group, ?-carbon that is a carbon atom bonded to the silicon atom constitutes a methylene group, and ?-carbon that is a carbon atom bonded to the methylene group or ?-carbon that is a carbon atom bonded to the ?-carbon is a branching point.

Abstract: An insulating film material for plasma CVD, wherein the material is represented by the chemical formula (1); a film forming method using the material; and an insulating film; (in the formula, m and n represent integer of 3 to 6, and m and n may be the same or different from each other in a molecule.

Abstract: An insulating film material for plasma CVD represented by a chemical formula (1) shown below, a method of film formation using the insulating film material, and an insulating film. According to the present invention, an insulating film having a low dielectric constant and a superior copper diffusion barrier property suitable for an interlayer insulating film or the like of a semiconductor device can be obtained. In the chemical formula (1), n represents an integer of 3 to 6, and each of R1 and R2 independently represents one of C2H, C2H3, C3H3, C3H5, C3H7, C4H5, C4H7, C4H9, C5H7, C5H9 and C5H11.

Abstract: Provided are a CVD system and a CVD process which can grow excellent compound semiconductor thin films of two or more components having least defects and which enjoy high source gas utilization efficiency and increased productivity. According to the CVD system and the CVD process, at least two kinds of source gases are introduced parallel to the surface of a substrate 11 placed in a reactor 10 to grow a compound semiconductor thin film of two or more components on the surface of the substrate 11.