Patents by Inventor Yoshie OZAWA

Yoshie OZAWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etching method
    Patent number: 11127597
    Abstract: There is provided an etching method including: a step of disposing a substrate in a chamber, the substrate having a silicon nitride film, a silicon oxide film, a silicon, and a silicon germanium; a step of setting a pressure in the chamber to 1,333 Pa or more; and a step of selectively etching the silicon nitride film with respect to the silicon oxide film, the silicon, and the silicon germanium by supplying a hydrogen fluoride gas into the chamber.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: September 21, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Reiko Sasahara, Satoshi Toda, Takuya Abe, Tsuhung Huang, Yoshie Ozawa, Ken Nakagomi, Kenichi Nakahata, Kenshiro Asahi
  • ETCHING METHOD
    Publication number: 20200111674
    Abstract: There is provided an etching method including: a step of disposing a substrate in a chamber, the substrate having a silicon nitride film, a silicon oxide film, a silicon, and a silicon germanium; a step of setting a pressure in the chamber to 1,333 Pa or more; and a step of selectively etching the silicon nitride film with respect to the silicon oxide film, the silicon, and the silicon germanium by supplying a hydrogen fluoride gas into the chamber.
    Type: Application
    Filed: March 28, 2018
    Publication date: April 9, 2020
    Inventors: Reiko SASAHARA, Satoshi TODA, Takuya ABE, Tsuhung HUANG, Yoshie OZAWA, Ken NAKAGOMI, Kenichi NAKAHATA, Kenshiro ASAHI
  • ETCHING METHOD AND ETCHING APPARATUS
    Publication number: 20190378724
    Abstract: There is provided an etching method which includes: providing a substrate inside a chamber, the substrate including a silicon oxide-based material and other material, the silicon oxide-based material including an etching target portion having a width of 10 nm or less and an aspect ratio of 10 or more; and selectively etching the etching target portion with respect to the other material by supplying an HF gas and an OH-containing gas to the substrate.
    Type: Application
    Filed: June 7, 2019
    Publication date: December 12, 2019
    Inventors: Satoshi TODA, Satoru KIKUSHIMA, Ken NAKAGOMI, Yoshie OZAWA, Jun LIN