Patents by Inventor Yoshifumi Zaizen

Yoshifumi Zaizen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210272933
    Abstract: There is provided a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.
    Type: Application
    Filed: May 19, 2021
    Publication date: September 2, 2021
    Applicant: Sony Group Corporation
    Inventors: Satoru Wakiyama, Masaki Okamoto, Yutaka Ooka, Reijiroh Shohji, Yoshifumi Zaizen, Kazunori Nagahata, Masaki Haneda
  • Patent number: 11063020
    Abstract: There is provided a semiconductor device a method for manufacturing a semiconductor device, and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.
    Type: Grant
    Filed: July 24, 2019
    Date of Patent: July 13, 2021
    Assignee: SONY CORPORATION
    Inventors: Satoru Wakiyama, Masaki Okamoto, Yutaka Ooka, Reijiroh Shohji, Yoshifumi Zaizen, Kazunori Nagahata, Masaki Haneda
  • Patent number: 10991745
    Abstract: A semiconductor device including a device substrate and a readout circuit substrate. The device substrate includes a device region and a peripheral region. In the device region, a wiring layer and a first semiconductor layer including a compound semiconductor material are stacked. The peripheral region is disposed outside the device region. The readout circuit substrate faces the first semiconductor layer with the wiring layer in between, and is electrically coupled to the first semiconductor layer through the wiring layer. The peripheral region of the device substrate has a junction surface with the readout circuit substrate.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: April 27, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Suguru Saito, Nobutoshi Fujii, Ryosuke Matsumoto, Yoshifumi Zaizen, Shuji Manda, Shunsuke Maruyama, Hideo Shimizu
  • Publication number: 20210066372
    Abstract: An imaging unit includes a photoelectric conversion layer including a compound semiconductor and having a light incident surface, and a light shielding portion provided in an optical path of light incident on the light incident surface and shielding light having a wavelength of less than 450 nm.
    Type: Application
    Filed: December 12, 2018
    Publication date: March 4, 2021
    Inventors: YOSHIFUMI ZAIZEN, SHUNSUKE MARUYAMA
  • Publication number: 20200035739
    Abstract: A semiconductor device including a device substrate and a readout circuit substrate. The device substrate includes a device region and a peripheral region. In the device region, a wiring layer and a first semiconductor layer including a compound semiconductor material are stacked. The peripheral region is disposed outside the device region. The readout circuit substrate faces the first semiconductor layer with the wiring layer in between, and is electrically coupled to the first semiconductor layer through the wiring layer. The peripheral region of the device substrate has a junction surface with the readout circuit substrate.
    Type: Application
    Filed: April 16, 2018
    Publication date: January 30, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Suguru SAITO, Nobutoshi FUJII, Ryosuke MATSUMOTO, Yoshifumi ZAIZEN, Shuji MANDA, Shunsuke MARUYAMA, Hideo SHIMIZU
  • Publication number: 20190348398
    Abstract: There is provided a semiconductor device a method for manufacturing a semiconductor device, and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.
    Type: Application
    Filed: July 24, 2019
    Publication date: November 14, 2019
    Applicant: Sony Corporation
    Inventors: Satoru Wakiyama, Masaki Okamoto, Yutaka Ooka, Reijiroh Shohji, Yoshifumi Zaizen, Kazunori Nagahata, Masaki Haneda
  • Publication number: 20190319055
    Abstract: A light-receiving device of an embodiment of the present disclosure includes: a photoelectric conversion layer that includes a first compound semiconductor with a first conductivity type and absorbs a wavelength of an infrared region; a first semiconductor layer formed on the photoelectric conversion layer; and an insulation layer formed to surround the photoelectric conversion layer and the first semiconductor layer, the first semiconductor layer having a second conductivity-type region at a middle region excluding a periphery facing the photoelectric conversion layer.
    Type: Application
    Filed: October 6, 2017
    Publication date: October 17, 2019
    Inventors: YOSHIFUMI ZAIZEN, SHUNSUKE MARUYAMA
  • Patent number: 10373934
    Abstract: There is provided a semiconductor device and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a second wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.
    Type: Grant
    Filed: February 2, 2018
    Date of Patent: August 6, 2019
    Assignee: Sony Corporation
    Inventors: Satoru Wakiyama, Masaki Okamoto, Yutaka Ooka, Reijiroh Shohji, Yoshifumi Zaizen, Kazunori Nagahata, Masaki Haneda
  • Publication number: 20180158803
    Abstract: There is provided a semiconductor device and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a second wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.
    Type: Application
    Filed: February 2, 2018
    Publication date: June 7, 2018
    Inventors: Satoru Wakiyama, Masaki Okamoto, Yutaka Ooka, Reijiroh Shohji, Yoshifumi Zaizen, Kazunori Nagahata, Masaki Haneda
  • Patent number: 9922961
    Abstract: There is provided a semiconductor device and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a second wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.
    Type: Grant
    Filed: November 17, 2016
    Date of Patent: March 20, 2018
    Assignee: Sony Corporation
    Inventors: Satoru Wakiyama, Masaki Okamoto, Yutaka Ooka, Reijiroh Shohji, Yoshifumi Zaizen, Kazunori Nagahata, Masaki Haneda
  • Publication number: 20170069604
    Abstract: There is provided a semiconductor device and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a second wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.
    Type: Application
    Filed: November 17, 2016
    Publication date: March 9, 2017
    Inventors: Satoru Wakiyama, Masaki Okamoto, Yutaka Ooka, Reijiroh Shohji, Yoshifumi Zaizen, Kazunori Nagahata, Masaki Haneda
  • Patent number: 9524925
    Abstract: There is provided a method for manufacturing a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.
    Type: Grant
    Filed: April 12, 2016
    Date of Patent: December 20, 2016
    Assignee: Sony Corporation
    Inventors: Satoru Wakiyama, Masaki Okamoto, Yutaka Ooka, Reijiroh Shohji, Yoshifumi Zaizen, Kazunori Nagahata, Masaki Haneda
  • Publication number: 20160247746
    Abstract: There is provided a method for manufacturing a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.
    Type: Application
    Filed: April 12, 2016
    Publication date: August 25, 2016
    Inventors: Satoru Wakiyama, Masaki Okamoto, Yutaka Ooka, Reijiroh Shohji, Yoshifumi Zaizen, Kazunori Nagahata, Masaki Haneda
  • Patent number: 9343392
    Abstract: There is provided a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.
    Type: Grant
    Filed: June 19, 2013
    Date of Patent: May 17, 2016
    Assignee: Sony Corporation
    Inventors: Satoru Wakiyama, Masaki Okamoto, Yutaka Ooka, Reijiroh Shohji, Yoshifumi Zaizen, Kazunori Nagahata, Masaki Haneda
  • Publication number: 20150179546
    Abstract: There is provided a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.
    Type: Application
    Filed: June 19, 2013
    Publication date: June 25, 2015
    Inventors: Satoru Wakiyama, Masaki Okamoto, Yutaka Ooka, Reijiroh Shohji, Yoshifumi Zaizen, Kazunori Nagahata, Masaki Haneda