Patents by Inventor Yoshiharu Kudoh

Yoshiharu Kudoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200365642
    Abstract: A semiconductor integrated circuit includes a first semiconductor substrate in which a part of an analog circuit is formed between the analog circuit and a digital circuit which subjects an analog output signal output from the analog circuit to digital conversion; a second semiconductor substrate in which the remaining part of the analog circuit and the digital circuit are formed; and a substrate connection portion which connects the first and second semiconductor substrates to each other. The substrate connection portion transmits an analog signal which is generated by a part of the analog circuit of the first semiconductor substrate to the second semiconductor substrate.
    Type: Application
    Filed: July 31, 2020
    Publication date: November 19, 2020
    Applicant: Sony Corporation
    Inventor: Yoshiharu Kudoh
  • Publication number: 20200286937
    Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.
    Type: Application
    Filed: May 18, 2020
    Publication date: September 10, 2020
    Applicant: SONY CORPORATION
    Inventors: Hideyuki HONDA, Tetsuya UCHIDA, Toshifumi WAKANO, Yusuke TANAKA, Yoshiharu KUDOH, Hirotoshi NOMURA, Tomoyuki HIRANO, Shinichi YOSHIDA, Yoichi UEDA, Kosuke NAKANISHI
  • Publication number: 20200266221
    Abstract: The present technology relates to a solid-state imaging device capable of suppressing deterioration in dark characteristics, and an electronic apparatus. The present invention is provided with: a photoelectric conversion section that performs photoelectric conversion; a charge retaining section that temporarily retains electric charge converted by the photoelectric conversion section; and a first trench formed in a semiconductor substrate between the photoelectric conversion section and the charge retaining section, the first trench being higher than the photoelectric conversion section in a depth direction of the semiconductor substrate. Alternatively, the first trench is lower than the photoelectric conversion section and higher than the charge retaining section in the depth direction of the semiconductor substrate. The present technology can be applied to, for example, a back-illuminated CMOS image sensor.
    Type: Application
    Filed: November 9, 2018
    Publication date: August 20, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Tetsuya UCHIDA, Ryoji SUZUKI, Yoshiharu KUDOH, Hiroyuki MORI, Harumi TANAKA
  • Patent number: 10741604
    Abstract: A semiconductor integrated circuit includes a first semiconductor substrate in which a part of an analog circuit is formed between the analog circuit and a digital circuit which subjects an analog output signal output from the analog circuit to digital conversion; a second semiconductor substrate in which the remaining part of the analog circuit and the digital circuit are formed; and a substrate connection portion which connects the first and second semiconductor substrates to each other. The substrate connection portion transmits an analog signal which is generated by a part of the analog circuit of the first semiconductor substrate to the second semiconductor substrate.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: August 11, 2020
    Assignee: Sony Corporation
    Inventor: Yoshiharu Kudoh
  • Patent number: 10700114
    Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: June 30, 2020
    Assignee: Sony Corporation
    Inventors: Hideyuki Honda, Tetsuya Uchida, Toshifumi Wakano, Yusuke Tanaka, Yoshiharu Kudoh, Hirotoshi Nomura, Tomoyuki Hirano, Shinichi Yoshida, Yoichi Ueda, Kosuke Nakanishi
  • Publication number: 20200168648
    Abstract: An imaging device includes a plurality of pixel transistors at a substrate surface of a semiconductor substrate, an element isolation region that isolates the plurality of pixel transistors from each other, a charge storage region at a deeper position in the semiconductor substrate than the substrate surface, and a charge discharge layer of the same conductivity type as the charge storage region. The charge discharge layer is arranged between the element isolation region and the charge storage region.
    Type: Application
    Filed: June 5, 2018
    Publication date: May 28, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Yoshiharu KUDOH
  • Publication number: 20200161354
    Abstract: A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit.
    Type: Application
    Filed: January 21, 2020
    Publication date: May 21, 2020
    Applicant: Sony Corporation
    Inventors: Shoji Kobayashi, Yoshiharu Kudoh, Takuya Sano
  • Publication number: 20200161349
    Abstract: The present disclosure relates to a solid-state imaging element, a sensor apparatus, and an electronic device capable of achieving better characteristics. A transistor constituting a pixel includes: a gate electrode having at least two fin portions formed so as to be buried from a planar portion planarly formed on a surface of a semiconductor substrate toward an inside of the semiconductor substrate; and a channel portion provided across a source and a drain so as to be in contact with side surfaces of the fin portions via an insulating film. In addition, a width of the channel portion is formed to be narrower than a depth of the fin portion. The present technology is applicable to a CMOS image sensor, for example.
    Type: Application
    Filed: January 22, 2020
    Publication date: May 21, 2020
    Applicant: SONY CORPORATION
    Inventor: Yoshiharu KUDOH
  • Patent number: 10600828
    Abstract: The present disclosure relates to a solid-state imaging element, a sensor apparatus, and an electronic device capable of achieving better characteristics. A transistor constituting a pixel includes: a gate electrode having at least two fin portions formed so as to be buried from a planar portion planarly formed on a surface of a semiconductor substrate toward an inside of the semiconductor substrate; and a channel portion provided across a source and a drain so as to be in contact with side surfaces of the fin portions via an insulating film. In addition, a width of the channel portion is formed to be narrower than a depth of the fin portion. The present technology is applicable to a CMOS image sensor, for example.
    Type: Grant
    Filed: March 17, 2017
    Date of Patent: March 24, 2020
    Assignee: SONY CORPORATION
    Inventor: Yoshiharu Kudoh
  • Patent number: 10580815
    Abstract: A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: March 3, 2020
    Assignee: SONY CORPORATION
    Inventors: Shoji Kobayashi, Yoshiharu Kudoh, Takuya Sano
  • Publication number: 20200043964
    Abstract: A solid-state imaging device which includes a plurality of pixels in an arrangement, each of the pixels including a photoelectric conversion element, pixel transistors including a transfer transistor, and a floating diffusion region, in which the channel width of transfer gate of the transfer transistor is formed to be larger on a side of the floating diffusion region than on a side of the photoelectric conversion element.
    Type: Application
    Filed: October 10, 2019
    Publication date: February 6, 2020
    Applicant: Sony Corporation
    Inventor: Yoshiharu Kudoh
  • Patent number: 10468442
    Abstract: A solid-state imaging device which includes a plurality of pixels in an arrangement, each of the pixels including a photoelectric conversion element, pixel transistors including a transfer transistor, and a floating diffusion region, in which the channel width of transfer gate of the transfer transistor is formed to be larger on a side of the floating diffusion region than on a side of the photoelectric conversion element.
    Type: Grant
    Filed: February 16, 2018
    Date of Patent: November 5, 2019
    Assignee: Sony Corporation
    Inventor: Yoshiharu Kudoh
  • Patent number: 10396118
    Abstract: A semiconductor integrated circuit includes a first semiconductor substrate in which a part of an analog circuit is formed between the analog circuit and a digital circuit which subjects an analog output signal output from the analog circuit to digital conversion; a second semiconductor substrate in which the remaining part of the analog circuit and the digital circuit are formed; and a substrate connection portion which connects the first and second semiconductor substrates to each other. The substrate connection portion transmits an analog signal which is generated by a part of the analog circuit of the first semiconductor substrate to the second semiconductor substrate.
    Type: Grant
    Filed: April 13, 2017
    Date of Patent: August 27, 2019
    Assignee: Sony Corporation
    Inventor: Yoshiharu Kudoh
  • Patent number: 10306166
    Abstract: A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.
    Type: Grant
    Filed: May 3, 2017
    Date of Patent: May 28, 2019
    Assignee: Sony Corporation
    Inventors: Yorito Sakano, Takashi Abe, Keiji Mabuchi, Ryoji Suzuki, Hiroyuki Mori, Yoshiharu Kudoh, Fumihiko Koga, Takeshi Yanagita, Kazunobu Ota
  • Publication number: 20190123079
    Abstract: The present disclosure relates to a solid-state imaging element, a sensor apparatus, and an electronic device capable of achieving better characteristics. A transistor constituting a pixel includes: a gate electrode having at least two fin portions formed so as to be buried from a planar portion planarly formed on a surface of a semiconductor substrate toward an inside of the semiconductor substrate; and a channel portion provided across a source and a drain so as to be in contact with side surfaces of the fin portions via an insulating film. In addition, a width of the channel portion is formed to be narrower than a depth of the fin portion. The present technology is applicable to a CMOS image sensor, for example.
    Type: Application
    Filed: March 17, 2017
    Publication date: April 25, 2019
    Applicant: SONY CORPORATION
    Inventor: Yoshiharu KUDOH
  • Patent number: 10269856
    Abstract: A semiconductor integrated circuit includes a first semiconductor substrate in which a part of an analog circuit is formed between the analog circuit and a digital circuit which subjects an analog output signal output from the analog circuit to digital conversion; a second semiconductor substrate in which the remaining part of the analog circuit and the digital circuit are formed; and a substrate connection portion which connects the first and second semiconductor substrates to each other. The substrate connection portion transmits an analog signal which is generated by a part of the analog circuit of the first semiconductor substrate to the second semiconductor substrate.
    Type: Grant
    Filed: May 4, 2017
    Date of Patent: April 23, 2019
    Assignee: Sony Corporation
    Inventor: Yoshiharu Kudoh
  • Publication number: 20190096941
    Abstract: A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit.
    Type: Application
    Filed: November 13, 2018
    Publication date: March 28, 2019
    Applicant: Sony Corporation
    Inventors: Shoji Kobayashi, Yoshiharu Kudoh, Takuya Sano
  • Publication number: 20190051692
    Abstract: A semiconductor integrated circuit includes a first semiconductor substrate in which a part of an analog circuit is formed between the analog circuit and a digital circuit which subjects an analog output signal output from the analog circuit to digital conversion; a second semiconductor substrate in which the remaining part of the analog circuit and the digital circuit are formed; and a substrate connection portion which connects the first and second semiconductor substrates to each other. The substrate connection portion transmits an analog signal which is generated by a part of the analog circuit of the first semiconductor substrate to the second semiconductor substrate.
    Type: Application
    Filed: October 16, 2018
    Publication date: February 14, 2019
    Applicant: Sony Corporation
    Inventor: Yoshiharu Kudoh
  • Patent number: 10205893
    Abstract: An imaging device of a CMOS type having a global shutter function is downsized. In the imaging device, a photoelectric conversion unit generates charge corresponding to an exposure amount in a predetermined exposure period. A generated charge retaining unit is formed to have a predetermined impurity concentration in a semiconductor substrate and retains the charge. A generated charge transferring unit renders the photoelectric conversion unit and the generated charge retaining unit conductive therebetween after the exposure period has elapsed and transfers the charge from the photoelectric conversion unit to the generated charge retaining unit. An output charge retaining unit is formed to have substantially the same impurity concentration as that of the generated charge retaining unit and retains charge.
    Type: Grant
    Filed: January 7, 2016
    Date of Patent: February 12, 2019
    Assignee: SONY CORPORATION
    Inventor: Yoshiharu Kudoh
  • Publication number: 20190043901
    Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.
    Type: Application
    Filed: April 11, 2017
    Publication date: February 7, 2019
    Inventors: Hideyuki HONDA, Tetsuya UCHIDA, Toshifumi WAKANO, Yusuke TANAKA, Yoshiharu KUDOH, Hirotoshi NOMURA, Tomoyuki HIRANO, Shinichi YOSHIDA, Yoichi UEDA, Kosuke NAKANISHI