Abstract: This SiC heater includes a heating element having a thin plate-shaped silicon carbide sintered body and an insulating coat film formed on a surface of the silicon carbide sintered body, a pair of electrodes for conducting electricity in the heating element, and a heater base that holds the heating element from one surface side while insulating the heating element from heat from the heating element, the insulating coat film is located on a surface of the silicon carbide sintered body opposite to the heater base, an electrical resistivity at room temperature of the insulating coat film is 109 ?·cm or more, a thermal expansion coefficient of the insulating coat film is 2×10?6/K or more and 6×10?6/K or less, SiO2 is included as a matrix, 1% by weight or more and 35% by weight or less of a first additive component including at least one of B2O3 and Al2O3 is contained, and 1% by weight or more and 35% by weight or less of a second additive component including at least one of MgO and CaO is contained.

Abstract: This SiC heater includes a heating element having a thin plate-shaped silicon carbide sintered body and an insulating coat film formed on a surface of the silicon carbide sintered body, a pair of electrodes for conducting electricity in the heating element, and a heater base that holds the heating element from one surface side while insulating the heating element from heat from the heating element, the insulating coat film is located on a surface of the silicon carbide sintered body opposite to the heater base, an electrical resistivity at room temperature of the insulating coat film is 109 ?·cm or more, a thermal expansion coefficient of the insulating coat film is 2×10?6/K or more and 6×10?6/K or less, SiO2 is included as a matrix, 1% by weight or more and 35% by weight or less of a first additive component including at least one of B2O3 and Al2O3 is contained, and 1% by weight or more and 35% by weight or less of a second additive component including at least one of MgO and CaO is contained.

Abstract: A first management apparatus that is connected to a first equipment device group including a plurality of first equipment devices centrally manages the first equipment devices. A second management apparatus connected to a second equipment device group including a plurality of second equipment devices separate from the plurality of first equipment devices centrally manages the second equipment devices. A group management apparatus connected to the first and second management apparatus centrally manages the first and second equipment device groups. The first and second management apparatus include first and second management programs to centrally manage the first and second equipment devices. The group management apparatus includes a group management program for centrally managing the first and second equipment device groups.

Abstract: A group management apparatus is connected to first to nth management apparatus that collectively manage a plurality of installation equipment belonging to first to nth installation equipment groups, and collectively manages the first to nth installation equipment groups. One or more interrogation processors repeatedly carry out interrogation processing for the first to nth management apparatus regarding operating conditions of the installation equipment collectively managed by the first to nth management apparatus. Preferably, an allocation unit allocates different interrogation processors to the first to nth management apparatus, respectively, one at a time, and allocates other allocation processors to the first to nth management apparatus according to an interrogation processing state of the installation equipment by at least one of the interrogation processors.

Abstract: A first management apparatus that is connected to a first equipment device group including a plurality of first equipment devices centrally manages the first equipment devices. A second management apparatus connected to a second equipment device group including a plurality of second equipment devices separate from the plurality of first equipment devices centrally manages the second equipment devices. A group management apparatus connected to the first and second management apparatus centrally manages the first and second equipment device groups. The first and second management apparatus include first and second management programs to centrally manage the first and second equipment devices. The group management apparatus includes a group management program for centrally managing the first and second equipment device groups.

Abstract: Since the chip-breaking groove 30 is cut in the inner peripheral surface of the prepared hole 22 by compressing the chip-breaking tool 10 into the prepared hole 22 prior to the tapping process (the cutting process of the female thread) by the cut tap, the chip can be securely broken by the chip-breaking groove 30 and well discharged even in the case that the work 20 is made of the material having the high ductility. Accordingly, for example, as shown in FIG. 10, it is possible to prevent a lot of long connected chips from entwining the tap, it is unnecessary to monitor the tapping work, and it is possible to achieve a complete automation (an unmanned work). Further, it is possible to inhibit the cut tap from being broken due to the pinching of the chip, and it is easy to execute a treatment such as a chip cleaning or the like.

Abstract: Since the chip-breaking groove 30 is cut in the inner peripheral surface of the prepared hole 22 by compressing the chip-breaking tool 10 into the prepared hole 22 prior to the tapping process (the cutting process of the female thread) by the cut tap, the chip can be securely broken by the chip-breaking groove 30 and well discharged even in the case that the work 20 is made of the material having the high ductility. Accordingly, for example, as shown in FIG. 10, it is possible to prevent a lot of long connected chips from entwining the tap, it is unnecessary to monitor the tapping work, and it is possible to achieve a complete automation (an unmanned work). Further, it is possible to inhibit the cut tap from being broken due to the pinching of the chip, and it is easy to execute a treatment such as a chip cleaning or the like.

Abstract: A diamond-coated body including: a substrate formed of a cemented carbide; a diamond coating; and an interface layer interposed between the substrate and the diamond coating, wherein the interface layer consists of a solid solution including an aluminum nitride and a metal which belongs to one of groups IVa, Va and VIa of the periodic table. The interface layer is preferably provided by one of TiAlN, CrAlN and VAlN. The substrate is preferably formed of a super-fine particle cemented carbide.

Abstract: A diamond-coated body including: a substrate formed of a cemented carbide; a diamond coating; and an interface layer interposed between the substrate and the diamond coating, wherein the interface layer consists of a solid solution including an aluminum nitride and a metal which belongs to one of groups IVa, Va and VIa of the periodic table. The interface layer is preferably provided by one of TiAlN, CrAlN and VAlN. The substrate is preferably formed of a super-fine particle cemented carbide.

Abstract: A combination long lower mold and pretension bench for the formation of prestressed concrete materials is constructed by serially connecting plurality of unit lower molds of concrete, attaching prestressing steel wire tension benches one each to the foremost and rearmost unit lower molds, and fastening the unit lower molds and the tension benches collectively with steel wires. Prestressed concrete materials are obtained by stretching prestressing steel wires along the upper surface of the long lower mold, continuously pouring and placing stiff-consistency concrete on the long lower mold, causing a slide upper mold to run on the concrete thereby shaping the concrete in a required cross section, curing the shaped concrete strip, and cutting the cured concrete strip into pieces of a desired size.