Patents by Inventor Yoshihiro Ii

Yoshihiro Ii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7351505
    Abstract: In a phase shift mask blank comprising a phase shift multilayer film on a substrate, the phase shift multilayer film consists of at least one layer of light absorption function film and at least one layer of phase shift function film, and the light absorption function film has an extinction coefficient k which increases as the wavelength changes from 157 nm to 260 nm, and has a thickness of up to 15 nm. The phase shift mask blank has minimized wavelength dependency of transmittance and can be processed with a single dry etching gas.
    Type: Grant
    Filed: October 21, 2004
    Date of Patent: April 1, 2008
    Assignees: Shin-Etsu Chemical Co., Ltd, Toppan Printing Co., Ltd
    Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Yuichi Fukushima, Yoshihiro Ii, Tadashi Saga
  • Publication number: 20050112477
    Abstract: In a phase shift mask blank comprising a phase shift multilayer film on a substrate, the phase shift multilayer film consists of at least one layer of light absorption function film and at least one layer of phase shift function film, and the light absorption function film has an extinction coefficient k which increases as the wavelength changes from 157 nm to 260 nm, and has a thickness of up to 15 nm. The phase shift mask blank has minimized wavelength dependency of transmittance and can be processed with a single dry etching gas.
    Type: Application
    Filed: October 21, 2004
    Publication date: May 26, 2005
    Applicants: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.
    Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Yuichi Fukushima, Yoshihiro Ii, Tadashi Saga