Abstract: The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by depositing compound-semiconductor layers 13 and 14 on a monocrystalline substrate 11 of a hexagonal close-packed structure. The shape of the monocrystalline substrate 11 is a parallelogram. Individual sides of the parallelogram are parallel to a <11-20> orientation. As the monocrystalline substrate, sapphire, zinc oxide or silicon carbide may be used. As the compound-semiconductor layers, an n-type GaN layer 13 and p-type GaN layer 14 may be used.

Abstract: In the semiconductor light emitting device, a high resistance layer formed by mutual diffusion at an interface with the substrate crystal can be eliminated, and a low resistance p-type contact can be realized. In addition, it is possible to reduce the leak current when an internal current-blocking structure is formed. In practice, a compound semiconductor layer offset in composition ratio stoichiometrically is used as the contact layer. Further, when a predetermined element is added to the contact layer, a large amount of doping can be enabled in comparison with when impurities are added to the ordinary GaN based layer. Therefore, a high concentration conductive type layer can be realized while reducing the contact resistance. In addition, when the compound semiconductor layer offset away from the stoichiometric composition is used as the current-blocking layer, the current-blocking efficiency can be improved.

Abstract: The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by depositing compound-semiconductor layers 13 and 14 on a monocrystalline substrate 11 of a hexagonal close-packed structure. The shape of the monocrystalline substrate 11 is a parallelogram. Individual sides of the parallelogram are parallel to a <11-20> orientation. As the monocrystalline substrate, sapphire, zinc oxide or silicon carbide may be used. As the compound-semiconductor layers, an n-type GaN layer 13 and p-type GaN layer 14 may be used.

Abstract: This invention is a semiconductor device including a p-type InP substrate having a mesa stripe in which at least an active layer and an n-type cladding layer are formed, and a semiconductor layer so formed as to bury the side surfaces of the mesa stripe and having at least an n-type current blocking layer and a p-type current blocking layer, wherein the n-type current blocking layer contains approximately 8.times.10.sup.17 cm.sup.-3 or more of Se as an impurity and the n-type current blocking layer and the n-type cladding layer are not contacting each other.

Abstract: A light emitting diode is arranged on a sapphire substrate. The light emitting diode includes an n-GaN layer, an n-InGaN light-emitting layer, a p-AlGaN layer and a P-GaN layer, which are grown through vapor phase growth in this sequence. Within the p-GaN layer and p-AlGaN layer, 1.times.10.sup.20 cm.sup.-3 of Mg and 2.times.10.sup.19 cm.sup.-3 of Mg are contained, respectively. Within each of the n-GaN layer and n-InGaN light-emitting layer, 5.times.10.sup.18 cm.sup.-3 of hydrogen is contained, thereby preventing Mg from diffusing therein from the p-GaN layer and p-AlGaN layer.

Abstract: A method of manufacturing GaAs single crystals in which gas in the vicinity of the surface of a substrate crystal is irradiated with light so as to an epitaxial growth of GaAs single crystals may be enabled by the halogen transport method under such condition that the temperature of the substrate crystal is lowered less than 700.degree. C.

Abstract: A p-type GaAs or AlGaAs thin film is formed by a MOCVD method. In the growing step of the thin film, the thin film is doped with a high concentration of carbon atoms forming an acceptor level such that the carrier concentration of the thin film falls within the range of between 1.times.10.sup.18 cm.sup.-3 and 1.times.10.sup.20 cm.sup.-3. At least one of trimethyl gallium and trimethyl aluminum is used as a raw material gaseous compound of III-group element, and arsine is used as a raw material gaseous compound of V-group element. The thin film is formed by an epitaxial growth under the molar ratio V/III of the V-group element supply rate to the III-group element supply rate, which is set at such a small value as 0.3 to 2.5, the temperature of 450 to 700.degree. and the pressure of 1 to 400 Torr. The thin film formed under these conditions exhibits a mirror-like smooth surface, and the film-growth rate is dependent on the supply rate of the V-group element.

Abstract: Disclosed is a semiconductor light emitting device, comprising a semiconductor substrate, a double hetero structure portion formed on the front surface of the substrate and consisting of an InGaAlP active layer and lower and upper clad layers having the active layer sandwiched therebetween, a first electrode formed in a part of the surface of the double hetero structure portion, and a second electrode formed on the back surface of the substrate. A current diffusion layer formed of GaAlAs is interposed between the double hetero structure portion and the first electrode, said current diffusion layer having a thickness of 5 to 30 microns and a carrier concentration of 5.times.10.sup.17 cm.sup.-3 to 5.times.10.sup.18 cm.sup.-3.

Abstract: A semiconductor light emitting device, especially, a light emitting diode includes a compound semiconductor substrate of a first conductivity type, an InGaAlP layer formed on the substrate and having a light emitting region, a GaAlAs layer of a second conductivity type formed on the InGaAlP layer and having a larger band gap than that of the InGaAlP layer, and an electrode formed on a part of the GaAlAs layer. The light emitting diode emits light from a surface at the electrode side except for the electrode. A current from the electrode is widely spread by the GaAlAs layer to widely spread a light emitting region.

Abstract: In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:0.015.DELTA..sup.1/2 <d/.lambda.<0.028.DELTA..sup.-1/2and.DELTA.=(n.sub.a.sup.2 -n.sub.c.sup.2)/2n.sub.a.sup.2.

Abstract: A semiconductor laser device using double heterostructure comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1), capable of preventing the leakage of the carriers and thereby reducing the threshold current, being operative with small threshold current density and at high temperature, and having a long lifetime. The device may include a double heterostructure formed on the GaAs substrate, comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) including an active layer, the active layer having an impurity concentration not greater than 5.times.10.sup.16 cm.sup.-3. The device may include a double heterostructure formed on the GaAs substrate, comprised of InGaP active layer and p-type In.sub.q (Ga.sub.1-z Al.sub.z).sub.q P (0.ltoreq.q.ltoreq.1, 0.ltoreq.z.ltoreq.1) cladding layer with a value of z between 0.65 and 0.75. The device may include a double heterostructure formed on the GaAs substrate, comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.

Abstract: A gain waveguide type semiconductor laser oscillating visible light has an N type GaAs substrate of, and a double-heterostructure provided above the substrate to include an InGaP active layer, and first and second cladding layers sandwiching the active layer. The first cladding layer consists of N type InGaAlP, whereas the second cladding layer consists of P type InGaAlP. A P type InGaP layer is formed as an intermediate band-gap layer on the second cladding layer. An N type GaAs current-blocking layer is formed on the intermediate band-gap layer, and has an elongated waveguide opening. A P type GaAs contact layer is formed to cover the current-blocking layer and the opening.

Abstract: A gain waveguide type semiconductor laser oscillating visible light has an N type GaAs substrate of, and a double-heterostructure provided above the substrate to include an InGap active layer, and first and second cladding layers sandwiching the active layer. The first cladding layer consists of N type InGaAlP, whereas the second cladding layer consists of P type InGaAlP. A P type InGaP layer is formed as an intermediate band-gap layer on the second cladding layer. An N type GaAs current-blocking layer is formed on the intermediate band-gap layer, and has an elongated waveguide opening. A P type GaAs contact layer is formed to cover the current-blocking layer and the opening.

Abstract: In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:0.015.DELTA..sup.1/2 <d/.lambda.<0.028.DELTA..sup.-1/2and.DELTA.=(n.sub.a.sup.2 -n.sub.c.sup.2)/2n.sub.a.sup.

Abstract: The invention provides a method and an apparatus for manufacturing single crystals wherein the weight of the single crystal pulled is measured by a weight detector. The measured weight is compared with a reference weight signal which is generated from a reference weight signal generator. A weight deviation signal representing a difference between these two signals is generated by a weight deviation detector. The weight deviation signal is differentiated by a first differentiation circuit and a differentiation output signal obtained is corrected for compensation for the buoyancy of the liquid encapsulant by a signal which is generated by a buoyancy correction signal generator. A corrected signal thus obtained is differentiated by a second differentiation circuit and is thereafter added to the corrected signal. The addition result is phase-compensated by a phase-compensating circuit. The phase-compensated signal is supplied to a heating control circuit.

Abstract: The invention provides a method and an apparatus for manufacturing single crystals wherein the weight of the single crystal pulled is measured by a weight detector. The measured weight is compared with a reference weight signal which is generated from a reference weight signal generator. A weight deviation signal representing a difference between these two signals is generated by a weight deviation detector. The weight deviation signal is differentiated by a first differentiation circuit and a differentiation output signal obtained is corrected for compensation for the buoyancy of the liquid encapsulant by a signal which is generated by a buoyancy correction signal generator. A corrected signal thus obtained is differentiated by a second differentiation circuit and is thereafter added to the corrected signal. The addition result is phase-compensated by a phase-compensating circuit. The phase-compensated signal is supplied to a heating control circuit.

Abstract: The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by depositing compound-semiconductor layers 13 and 14 on a monocrystalline substrate 11 of a hexagonal close-packed structure. The shape of the monocrystalline substrate 11 is a parallelogram. Individual sides of the parallelogram are parallel to a <11-20> orientation. As the monocrystalline substrate, sapphire, zinc oxide or silicon carbide may be used. As the compound-semiconductor layers, an n-type GaN layer 13 and p-type GaN layer 14 may be used.