Abstract: A bottom face processing method of a pillar-shaped honeycomb structure including steps of: preparing a pillar-shaped honeycomb structure including a plurality of first cells which extend in parallel with each other from a first bottom face to a second bottom face, and each of which is opened in the first bottom face and has a protruding plugged portion in the second bottom face, and a plurality of second cells each of which is adjacent to at least one of the first cells with a partition wall interposed therebetween, which extend in parallel with each other from the first bottom face to the second bottom face, and each of which has a protruding plugged portion in the first bottom face, and is opened in the second bottom face; and removing the protruding portion from the plugged portion of each of the first cells and the second cells of the pillar-shaped honeycomb structure.

Abstract: An imaging device including: a photoelectric converter that generates a signal charge by photoelectric conversion of light; a semiconductor substrate; a charge accumulation region that is an impurity region of a first conductivity type in the semiconductor substrate, the charge accumulation region being configured to receive the signal charge; a first transistor that includes, as a source or a drain, a first impurity region of the first conductivity type in the semiconductor substrate; and a blocking structure that is located between the charge accumulation region and the first transistor. The blocking structure includes a second impurity region of a second conductivity type in the semiconductor substrate, the second conductivity type being different from the first conductivity type, and a first electrode that is located above the semiconductor substrate, the first electrode being configured to be applied with a first voltage.

Abstract: An activity support apparatus supports an activity of a worker at a disaster site. The activity support apparatus comprises a position acquisition unit that acquires a position of the worker, a boundary data acquisition unit that acquires boundary data that indicates a boundary of a building at the disaster site, and an entry determination unit that determines whether the worker has entered the building based on the positions of the worker acquired at different timings and the boundary data.

Abstract: An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region. Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.

Abstract: A pillar-shaped honeycomb structure including a plurality of first cells extending from an inlet side end surface to an outlet side end surface, and a plurality of second cells extending from the inlet side end surface to the outlet side end surface, with a porous partition wall interposed therebetween, wherein a porous film having a porosity higher than that of the partition walls is provided on a surface of each of the first cells, and at a cross-section orthogonal to the direction in which the first cells of the pillar-shaped honeycomb structure filter extend, the average thickness of the porous film in the central portion is larger than the average thickness of the porous film in the outer peripheral portion.

Abstract: An image sensor includes a semiconductor substrate, a first photoelectric converter, and a second photoelectric converter. The semiconductor substrate has an electric-charge storage region. The second photoelectric converter is located between the first photoelectric converter and the semiconductor substrate. The first photoelectric converter includes a first counter electrode, a first pixel electrode, and a first photoelectric conversion layer. The first photoelectric conversion layer is located between the first counter electrode and the first pixel electrode. The second photoelectric converter includes a second counter electrode, a second pixel electrode, and a second photoelectric conversion layer. The second photoelectric conversion layer is located between the second counter electrode and the second pixel electrode. The electric-charge storage region is electrically connected to the first pixel electrode and the second pixel electrode.

Abstract: An imaging apparatus includes a substrate, a first electrode, a second electrode, a photoelectric conversion layer, a first transistor, and a penetrating electrode. The photoelectric conversion layer is located between the first electrode and the second electrode and converts light into charges. The first transistor includes a first impurity region serving as one of a source and a drain, a second impurity region serving as the other of the source and the drain, and a first gate electrode. The penetrating electrode penetrates the substrate and electrically connects the first electrode to the first impurity region. The charges are accumulated in the first impurity region. A distance between the first impurity region and the penetrating electrode is longer in a plan view than a distance between the second impurity region and the penetrating electrode.

Abstract: An information terminal is configured to extract a predetermined frequency band from a waveform of a signal of a machine component detected by a vibration sensor, to compare an analyzed frequency component and a damaging frequency resulting from a damage of the machine component, and to diagnose abnormality of the machine component. The information terminal includes a database in which the damaging frequency resulting from the damage of the machine component is preserved as a converted damaging frequency obtained by converting the damaging frequency on a basis of a predetermined rotating speed of the machine component. The damaging frequency is provided by calculating the converted damaging frequency in the database by using an actual rotating speed of the machine component. Accordingly, it is possible to keep specifications of a machine component confidential without preserving the specifications of the machine component.

Abstract: An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.

Abstract: An inspection device for a pillar shaped honeycomb filter includes: a housing portion that can house a pillar shaped honeycomb filter; an introduction pipe and a discharge pipe through which a gas can flow, each of the introduction pipe and the discharge pipe being connected to the housing portion; a particle generation portion for generating particles; a particle introduction portion for introducing the particles generated by the particle generation portion into the introduction pipe; a gas stirring portion arranged in the introduction pipe on an upstream side of the particle introduction portion in a gas flow direction; and particle counters for measuring the number of particles, the particle counters being arranged in the introduction pipe and the discharge pipe on a downstream side of the particle introduction portion in the gas flow direction.

Abstract: An imaging device, including a photoelectric converter that generates a signal charge by photoelectric conversion of light; and a semiconductor substrate. The semiconductor substrate includes: a charge accumulation region that is an impurity region of a first conductivity type, and configured to accumulate the signal charge; a first impurity region of the first conductivity type, the first impurity region being one of a source or a drain of a first transistor and adjacent to the charge accumulation region; and a blocking structure located between the charge accumulation region and the first impurity region. The blocking structure includes a second impurity region of a second conductivity type different from the first conductivity type, a part of the second impurity region located on a surface of the semiconductor substrate, and the second impurity region is not in contact with the first impurity region on the surface of the semiconductor substrate.

Abstract: A method for inspecting a pillar-shaped honeycomb structure includes steps of: capturing a pattern of reflected light from an end face with a camera and generating an image data of the pattern of the reflected light; distinguishing positional information of each of cells adjacent to an outer peripheral side wall and cells that are not adjacent to the outer peripheral side wall based on the image data of the pattern of the reflected light, and storing the distinguished positional information in a memory; capturing a pattern of transmitted light from the end face with the camera and generating an image data of the pattern of the transmitted light; measuring intensity of each transmitted light from the cells adjacent to the outer peripheral side wall to detect the cells having defective plugged portions that are adjacent to the outer peripheral side wall based on the generated image data of the pattern of the transmitted light and the positional information; and measuring intensity of each transmitted light from

Abstract: A pillar-shaped honeycomb structure including a plurality of first cells extending from an inlet side end surface to an outlet side end surface, and a plurality of second cells extending from the inlet side end surface to the outlet side end surface, with a porous partition wall interposed therebetween, wherein a porous film having a porosity higher than that of the partition walls is provided on a surface of each of the first cells, and at a cross-section orthogonal to the direction in which the first cells of the pillar-shaped honeycomb structure filter extend, the average thickness of the porous film in the central portion is larger than the average thickness of the porous film in the outer peripheral portion.

Abstract: An imaging device including: a photoelectric converter that converts incident light into a signal charge; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element. The capacitive element including a first electrode, a second electrode and a dielectric film sandwiched between the first electrode and the second electrode, the first electrode being connected to the other of the source and the drain of the transistor, the second electrode being connected to a voltage source or a ground. The transistor is configured to switch a first mode and a second mode, a sensitivity in the first mode being different from a sensitivity in the second mode.

Abstract: A method for manufacturing a pillar-shaped honeycomb structure filter including; attaching ceramic particles to a surface of the first cells by ejecting an aerosol including the ceramic particles toward the inlet side end surface from a direction perpendicular to the inlet side end surface while applying a suction force to the outlet side end surface to suck the ejected aerosol from the inlet side end surface, wherein the ejection of the aerosol is carried out using an aerosol generator including a drive gas flow path for flowing a pressurized drive gas, a supply port provided on the way of the drive gas flow path and capable of sucking the ceramic particles from an outer peripheral side of the drive gas flow path toward an inside of the drive gas flow path, and a nozzle attached to a tip of the drive gas flow path and capable of ejecting the aerosol.

Abstract: An imaging device having a semiconductor substrate including: a semiconductor region including an impurity of a first conductivity type, a first diffusion region that is in contact with the semiconductor region, that includes an impurity of a second conductivity type different from the first conductivity type, and that converts incident light into charges, and a second diffusion region that includes an impurity of the second conductivity type and that directly accumulates at least a part of the charges generated in the first diffusion region. The imaging device further includes a contact plug in contact with the second diffusion region, and a capacitive element electrically connected to the second diffusion region through the contact plug.

Abstract: A control apparatus for a vehicle determines whether to perform either of a first control and a second control. In the first control, power is transferred between a power supply facility outside a vehicle and a power storage apparatus during stopping of the vehicle. In the second control, power is transferred between a rotating electric machine and the power storage apparatus through an inverter during traveling of the vehicle. In response to the first control, the apparatus performs control of the inverter to set a controlled variable to be equal to or less than a first limit value. In response to the second control, the apparatus performs control of the inverter to set a controlled variable to be equal to or less than a second limit value. The apparatus sets at least either of the first and second limit values to a value suppressing decrease in drivability of the vehicle.

Abstract: An imaging device includes a semiconductor substrate including a semiconductor region including an impurity of a first conductivity type, a first diffusion region that is in contact with the semiconductor region, that includes an impurity of a second conductivity type, and that converts incident light into charges, and a second diffusion region that includes an impurity of the second conductivity type and that accumulates at least a part of the charges flowing from the first diffusion region, a first transistor that includes a first gate electrode and that includes the second diffusion region as one of a source and a drain, a contact plug electrically connected to the second diffusion region, a capacitive element one end of which is electrically connected to the contact plug, and a second transistor that includes a second gate electrode, the second gate electrode being electrically connected to the one end of the capacitive element.

Abstract: An imaging device includes a pixel. The pixel includes a charge accumulator containing an impurity of a first conductivity type, a first transistor, a second transistor, a first well region containing an impurity of a second conductivity type, and a second well region containing an impurity of the first conductivity type. The charge accumulator accumulates charge generated through photoelectric conversion. The first transistor includes a first gate electrode and a first diffusion region containing an impurity of the first conductivity type. The second transistor includes a second gate electrode and a second diffusion region containing an impurity of the second conductivity type. The first transistor and the charge accumulator are located in the first well region, and the second transistor is located in the second well region. A distance between the charge accumulator and the second transistor is larger than a distance between the charge accumulator and the first transistor.

Abstract: A solid-state imaging device includes a semiconductor layer, an insulating layer, a plurality of photodetection elements, a transistor, and a metal member. The insulating layer is provided on the semiconductor layer. The photodetection elements are provided in the semiconductor layer, and arranged in a line. The photodetection elements generate charges at light incidence. The transistor is provided in an amplifier circuit. The amplifier circuit is provided in the semiconductor layer and the insulating layer, is isolated from the photodetection elements, and amplifies electrical signals due to the charges. The metal member is disposed between a photodetection area and the transistor in a plan view. The photodetection area is provided with the photodetection elements.