Abstract: An inspection method for a pillar-shaped honeycomb structure including a step A of generating strip-shaped images by repeatedly capturing the side surface part by part with an area camera while relatively moving the area camera with respect to the pillar-shaped honeycomb structure; and a step B of determining presence or absence of defects on the side surface based on the strip-shaped images obtained in the step A; wherein a number of the strip-shaped images generated in the step A is sufficient to cover the entire side surface; a shutter speed when the area camera captures a part of the side surface for generating a single strip-shaped image is 10 to 1000 ?sec; and each of the strip-shaped images has a length covering the entire height of the pillar-shaped honeycomb structure in a longitudinal direction, and a length of 1 to 10 mm in a width direction.

Abstract: A method for inspecting a pillar-shaped honeycomb structure including the steps of: imaging a pattern of transmitted light from the second end face according to arrangement of the plugged portions of first cells and second cells, with a camera via a light diffusing film placed parallel to a second end face of the pillar-shaped honeycomb structure in a non-contact state with the second end face, which pattern is obtained by irradiating a first end face with light; and detecting a defective plugged portion(s) of the second cells based on an image of the pattern of transmitted light imaged with the camera.

Abstract: An imaging device includes a semiconductor substrate, a photoelectric converter that converts incident light into a charge, a first impurity region located in the semiconductor substrate, where the first impurity region accumulates the charge and contains impurities of a first conductivity type, a second impurity region located in the semiconductor substrate, where the second impurity region contains impurities of the first conductivity type and is different from the first impurity region, a third impurity region located in the semiconductor substrate, between the first impurity region and the second impurity region in plan view, where the third impurity region contains impurities of a second conductivity type that differs from the first conductivity type, and a first contact located on the semiconductor substrate and electrically connected to the third impurity region. The first contact includes a semiconductor containing impurities of the second conductivity type.

Abstract: An abnormality diagnosis method of a rolling bearing used in rotating machinery includes: a time acquisition step of acquiring, from an output signal detected by a sensor during the rotation of the rolling bearing, an entry time when a rolling element enters a flaking region of a bearing ring, and an escape time when the rolling element escapes from the flaking region of the bearing ring; and an estimation step of estimating a flaking size based on a flaking passage time, which is a time difference between the entry time and the escape time. When the bearing ring receives repeated load from the rolling element, the progress of the flaking occurring in the bearing ring can be quantitatively evaluated.

Abstract: An imaging device including a semiconductor substrate having a first surface, the semiconductor substrate including: a first layer containing an impurity of a first conductivity type; a second layer containing an impurity of a second conductivity type different from the first conductivity type, the second layer being closer to the first surface than the first layer is; and a pixel. The pixel includes a photoelectric converter configured to convert light into charge; and a first diffusion region containing an impurity of the first conductivity type, the first diffusion region facing the first layer via the second layer, configured to store at least a part of the charge. The first layer having a second surface adjacent to the second layer, the second surface including a convex portion toward the first surface, and the convex portion facing the first diffusion region.

Abstract: A semiconductor device comprises the following: a wiring substrate having on one side a recessed section and a plurality of connection pads; a first semiconductor chip mounted in the recessed section; a second semiconductor chip that has a plurality of electrode pads on the surface of at least one end section (in this case, both ends) and that is laminated onto the first semiconductor chip so that at least one end section (in this case, both ends) protrudes from the first semiconductor chip; a plurality of wires that mutually and electrically connect the plurality of connection pads of the wiring substrate and the plurality of electrode pads of the second semiconductor chip. One end section of the second semiconductor chip extends beyond the inner surface of the recessed section and is supported by one side of the wiring substrate.

Abstract: The invention provides a joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body. Disclosed is a joining film for joining a semiconductor element and a substrate, the joining film having an electroconductive joining layer formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer having tackiness and being laminated with the electroconductive joining layer. The tack layer is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer are sintered, and thereby the semiconductor element and the substrate are joined.

Abstract: The invention provides a joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body. Disclosed is a joining film 13 for joining a semiconductor element 2 and a substrate 40, the joining film having an electroconductive joining layer 13a formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer 13b having tackiness and being laminated with the electroconductive joining layer. The tack layer 13b is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer 13a are sintered, and thereby the semiconductor element 2 and the substrate 40 are joined.

Abstract: An imaging device includes: a semiconductor substrate including a first diffusion region of a first conductivity type and a second diffusion region of the first conductivity type; a first plug that is connected to the first diffusion region and that contains a semiconductor; a second plug that is connected to the second diffusion region and that contains a semiconductor; and a photoelectric converter that is electrically connected to the first plug. An area of the second plug is larger than an area of the first plug in a plan view.

Abstract: An imaging device includes a first pixel. The first pixel has a photoelectric converting portion, a first capacitance element, and a first transistor. The photoelectric converting portion converts incident light into signal charge. The first capacitance element includes a first terminal and a second terminal, the first terminal being electrically connected to the photoelectric converting portion in at least a period of exposure. The first transistor includes a first source and a first drain, one of the first source and the first drain is electrically connected to the second terminal, and a direct-current potential is applied to the other of the first source and the first drain.

Abstract: An imaging device according to one aspect of the present disclosure includes: a semiconductor substrate; and pixels. Each of the pixels includes: a photoelectric converter that converts incident light into electric charge; a diffusion region provided in the semiconductor substrate and electrically connected to the photoelectric converter; a first transistor including a gate, and the diffusion region as one of a source and a drain; and a plug that is directly connected to the diffusion region, is electrically connected to the photoelectric converter, and includes a semiconductor. The height of the plug and the height of the gate from the surface of the semiconductor substrate are equal to each other.

Abstract: An imaging device includes a semiconductor substrate, a first pixel that performs photoelectric conversion, and a first shield. The first pixel includes a first diffusion region that is present in the semiconductor substrate, a first wiring line connected to the first diffusion region, a first transistor, and a first voltage line that makes up at least part of a voltage supply path to a drain or a source of the first transistor. A first signal charge obtained by photoelectric conversion performed by the first pixel flows through the first wiring line. The first signal charge flows into a gate of the first transistor via the first wiring line. Voltages that are different from each other are applied to the first voltage line. A distance between the first voltage line and the first shield is smaller than a distance between the first voltage line and the first wiring line.

Abstract: The method for producing a pigment-kneaded product includes a step [1] of supplying at least a pigment and a resin to a container provided in a kneading apparatus and a step [2] of kneading the resulting content (content (a1)) present in the container until a storage elastic modulus of content (a1) at an angular frequency of 1 rad/s, which is obtained by measurement of dynamic viscoelasticity at 25° C., reaches a range of 200 kPa to 30,000 kPa.

Abstract: An imaging device includes: a semiconductor substrate including a first diffusion region of a first conductivity type and a second diffusion region of the first conductivity type; a first plug that is connected to the first diffusion region and that contains a semiconductor; a second plug that is connected to the second diffusion region and that contains a semiconductor; and a photoelectric converter that is electrically connected to the first plug. An area of the second plug is larger than an area of the first plug in a plan view.

Abstract: A water-based pigment dispersion contains a pigment (A) including C.I. Pigment Orange 64 (a) having a primary particle size of 150 nm or less, a pigment-dispersing resin (B) containing a radical polymer having an acid value of 50 to 200 mg KOH/g, and water (C).

Abstract: An imaging device including: a photoelectric converter that generates a signal charge by photoelectric conversion of light; a semiconductor substrate; a charge accumulation region that is an impurity region of a first conductivity type in the semiconductor substrate, the charge accumulation region being configured to receive the signal charge; a first transistor that includes, as a source or a drain, a first impurity region of the first conductivity type in the semiconductor substrate; and a blocking structure that is located between the charge accumulation region and the first transistor. The blocking structure includes a second impurity region of a second conductivity type in the semiconductor substrate, the second conductivity type being different from the first conductivity type, and a first electrode that is located above the semiconductor substrate, the first electrode being configured to be applied with a first voltage.

Abstract: An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.

Abstract: A solid-state imaging device includes a semiconductor layer, an insulating layer, a plurality of photodetection elements, a transistor, and a metal member. The insulating layer is provided on the semiconductor layer. The photodetection elements are provided in the semiconductor layer, and arranged in a line. The photodetection elements generate charges at light incidence. The transistor is provided in an amplifier circuit. The amplifier circuit is provided in the semiconductor layer and the insulating layer, is isolated from the photodetection elements, and amplifies electrical signals due to the charges. The metal member is disposed between a photodetection area and the transistor in a plan view. The photodetection area is provided with the photodetection elements.

Abstract: Provided is a method for easily producing an oxidized carbon black aqueous dispersion that can highly remove multivalent metal ions and exhibit excellent dispersion stability. A method for producing an oxidized carbon black aqueous dispersion by successively performing on an aqueous slurry of oxidized carbon black having one or more anionic functional groups on a surface thereof a neutralization step of mixing an alkali metal hydroxide and performing heating/neutralization in the presence of one or more selected from a water-soluble chelating agent and a salt thereof or after mixing an alkali metal hydroxide and performing heating/neutralization, mixing one or more selected from a water-soluble chelating agent and a salt thereof and a separation and removal step of separating and removing a multivalent metal ion chelate complex from a mixed solution obtained at the neutralization step using a separation membrane.

Abstract: An imaging device includes a semiconductor layer including an impurity region of a first conductivity type, a photoelectric converter electrically connected to the impurity region, and a transistor having a gate of a second conductivity type different from the first conductivity type, a source and a drain, the transistor including the impurity region as one of the source and the drain, the gate being electrically connected to the impurity region.