Abstract: A light-emitting element includes: a first electrode; a first charge transport layer; a silicide layer containing silicide; a light-emitting layer; and a second electrode, all of which are provided in this order. The first charge transport layer and the light-emitting layer are adjacent to each other via the silicide layer.

Abstract: A display device includes: a light-emitting element including a first electrode and a second electrode overlapping each other in a plan view, and a light-emitting layer placed between the first electrode and the second electrode; a third electrode capable of forming an electrical field between the second electrode and the third electrode; and an optical adjustment element overlapping the light-emitting layer in a plan view and having light transmittance that changes in accordance with a potential difference between the second electrode and the third electrode.

Abstract: A light-emitting element includes: an anode, a light-emitting layer, a layer capable of transporting electrons, and a cathode, all of which are provided in a stated order; and an insulator layer provided in contact with, and at least partially between, the layer capable of transporting the electrons and the cathode, the insulator layer having a relative permittivity of 2 or higher and 50 or lower. The insulator layer includes a plurality of insulator layers shaped into islands and spaced apart from one another. The insulator layers are distributed non-uniformly in plan view.

Abstract: Provided is a technique for improving a luminous efficiency of a light-emitting element including quantum dots in a light-emitting layer by improving a balance between electrons and positive holes in the quantum dot layer. A light-emitting element according to the disclosure includes an anode, a cathode, and a quantum dot layer provided between the anode and the cathode and including a plurality of quantum dots and a vacancy, the vacancy being a region between the plurality of quantum dots. The quantum dot layer includes both the plurality of quantum dots and the vacancy in the quantum dot layer in an entire region of the quantum dot layer in each of all cross sections having a normal line in a direction from the cathode toward the anode.

Abstract: A light-emitting element includes: a first electrode; a second electrode; a light-emitting layer between the first electrode and the second electrode; and a sulfur-atom-fixing material between the first electrode and the second electrode, the sulfur-atom-fixing material being configured to fix sulfur atoms by chemically binding to the sulfur atoms.

Abstract: A display device includes: a TFT substrate including a thin film transistor; a light-emitting element including a first electrode and a second electrode overlapping each other in a plan view, and a light-emitting layer placed between the first electrode and the second electrode; a third electrode capable of forming an electrical field between the second electrode and the third electrode; an optical adjustment element overlapping the light-emitting layer in a plan view and having an optical characteristic that changes in accordance with a potential difference between the second electrode and the third electrode; and light scattering bodies included in at least one of the TFT substrate, the light-emitting element, and the optical adjustment element.

Abstract: An LED array includes: a substrate having a depressing-projecting structure formed on a surface of the substrate; a planarization layer formed on the depressing-projecting structure; a plurality of micro LED elements each of which is formed on the planarization layer; and a stray light attenuating groove formed between a pair of adjacent micro LED elements among the plurality of micro LED elements, and extending from toward the pair of micro LED elements to toward the depressing-projecting structure at least part way of the planarization layer.

Abstract: A light-emitting element includes: a cathode; an anode opposite the cathode; a light-emitting layer between the cathode and the anode; and an electron transport layer between the cathode and the light-emitting layer, the electron transport layer containing either a compound containing a Group IIB element, a Group IVB element, and elemental nitrogen or a compound containing the Group IVB element, a Group VIB element, and elemental boron.

Abstract: A light-emitting device includes an anode, a cathode, a light-emitting layer disposed between the anode and the cathode, a first electrode disposed in a manner capable of generating a second electric field in the light-emitting layer in cooperation with one of the anode and the cathode, the second electric field bringing a total electric field, which is generated in the light-emitting layer and includes a first electric field generated in the light-emitting layer between the anode and the cathode, close to zero, and a first insulating film surrounding the first electrode in a cross-sectional view of the anode, the cathode, and the light-emitting layer.

Abstract: A light-emitting element includes: a first electrode; a second electrode; and a quantum dot layer disposed between the first electrode and the second electrode. The quantum dot layer includes: a first quantum dot that is either an intrinsic quantum dot or an impurity quantum dot; and a second quantum dot disposed between the second electrode and the first quantum dot. The second quantum dot is either the intrinsic quantum dot or the impurity quantum dot other than the first quantum dot.

Abstract: A photoelectric conversion element includes: a first electrode and a second electrode; a photoelectric conversion layer between the first electrode and the second electrode; and a carrier transport layer between the photoelectric conversion layer and the second electrode, the carrier transport layer containing a plurality of carrier transport particles and a plurality of organic ligands, the carrier transport layer having a first end potion located close to the photoelectric conversion layer in a thickness direction of the carrier transport layer and a second end potion located close to the second electrode in the thickness direction of the carrier transport layer, wherein a first minimum distance between the plurality of carrier transport particles in the first end potion and the photoelectric conversion layer is larger than a second minimum distance between the plurality of carrier transport materials particles in the second end potion and the second electrode.

Abstract: A light-emitting device includes: a first electrode; a second electrode; a light-emitting layer disposed between the first electrode and the second electrode; and a hole transport layer disposed between the first electrode and the light-emitting layer, wherein the light-emitting layer includes a first quantum dot including a first core with an emission peak in a visible light region, and a second quantum dot including a second core with an emission peak in a near-ultraviolet region or an ultraviolet region.

Abstract: A light-emitting element includes the following: a cathode; an anode; and a light-emitting layer disposed between the cathode and the anode, and containing a quantum dot including a core and a shell, wherein the core contains a dopant.

Abstract: A method for manufacturing a display device includes forming a first layer including first quantum dots in each of a first region and a second region, the first region and the second region each being a region in which a light-emitting device is formed, making the first layer in the second region non-light-emitting, forming a second layer including second quantum dots in each of the first region and the second region, and making the second layer in the first region non-light-emitting.

Abstract: A light-emitting element includes the following: a cathode; an anode; a light-emitting layer provided between the cathode and the anode; an electron transport layer provided between the cathode and the light-emitting layer; and a potential well provided between the cathode and the light-emitting layer, and being a region having a larger electron affinity than a surrounding region.

Abstract: In a light-emitting device, a first electrode, a light-emitting layer, and a second electrode are disposed in the order recited. Moreover, a charge transport layer is disposed between the first electrode and the light-emitting layer and/or between the second electrode and the light-emitting layer. A third electrode at least partly overlaps the light-emitting layer. Moreover, the third electrode is disposed between the charge transport layer and the light-emitting layer.

Abstract: A light-emitting element includes: a first electrode; a second electrode disposed opposite the first electrode; a light-emitting layer disposed between the first electrode and the second electrode and containing quantum dots; and a carrier transport layer disposed between the first electrode and a surface of the light-emitting layer on a second electrode side, including a plurality of protrusions extending toward the second electrode side, and containing a carrier transport material, wherein at least parts of the plurality of protrusions of the carrier transport layer and at least parts of a plurality of gaps between the plurality of protrusions are covered by the quantum dots.

Abstract: A light-emitting device includes a first electrode, a second electrode facing the first electrode, a light-emitting layer provided between the first electrode the second electrode and including a phosphor, a layered body including a metal layer, a first insulating layer provided on a second electrode side of the metal layer, and a second insulating layer provided on a light-emitting layer side of the metal layer, and having a thickness that allows electron injection from the second electrode to the light-emitting layer, a first power supply configured to apply a voltage between the first electrode and the second electrode, and a second power supply configured to apply, between the metal layer and the second electrode, a voltage of which polarity of the second polarity is opposite to a polarity of the second electrode of a voltage applied by the first power supply between the first electrode and the second electrode.

Abstract: A quantum dot includes: an inner barrier layer; a quantum well layer formed on at least a part of the inner barrier layer, wherein a presence or absence of the quantum well layer or a thickness of the quantum well layer varies from location to location on the inner barrier layer; and an outer barrier layer formed on a surface of the quantum well layer opposite to a surface adjacent to the inner barrier layer.

Abstract: A light-emitting element, includes: an anode; a cathode facing the anode; a light-emitting layer provided between the anode and the cathode, and containing a phosphor; and at least one intermediate layer provided between the anode and the light-emitting layer, and containing at least one of oxide of a metal or hydroxide of the metal.