Patents by Inventor Yoshihisa Chido

Yoshihisa Chido has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130081694
    Abstract: Disclosed is a polycrystalline-type silicon solar cell which can be produced at low cost by forming a polycrystalline silicon film having a PN junction in a simple manner. Specifically, an amorphous silicon film produced by sputtering using a dopant-containing silicon target is polycrystallized with plasma, and a PN junction is formed in the amorphous silicon film, thereby producing a polycrystalline silicon film having a PN junction. The polycrystalline silicon film having a PN junction is used as a silicon substrate for a polycrystalline-type silicon solar cell. Also disclosed is a technique for producing a dopant-containing silicon target from a silicon ingot.
    Type: Application
    Filed: June 17, 2011
    Publication date: April 4, 2013
    Applicant: Panasonic Corporation
    Inventors: Ichiro Nakayama, Hitoshi Yamanishi, Yoshihisa Chido, Nobuyuki Kamikihara, Tomohiro Okumura