Abstract: Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

Abstract: Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

Abstract: A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.

Abstract: A first semiconductor device includes: a first wiring layer including a first interlayer insulating film, a first electrode pad, and a first dummy electrode, the first electrode pad being embedded in the first interlayer insulating film and having one surface located on same plane as one surface of the first interlayer insulating film, and the first dummy electrode being embedded in the first interlayer insulating film, having one surface located on same plane as the one surface of the first interlayer insulating film, and being disposed around the first electrode pad; and a second wiring layer including a second interlayer insulating film, a second electrode pad, and a second dummy electrode, the second electrode pad being embedded in the second interlayer insulating film, having one surface located on same surface as one surface of the second interlayer insulating film, and being bonded to the first electrode pad, and the second dummy electrode having one surface located on same plane as the surface located

Abstract: A semiconductor apparatus, electronic device, and method of manufacturing the semiconductor apparatus are disclosed. In one example, the semiconductor apparatus comprises a first semiconductor part that includes a first wiring, and a second semiconductor part that is adhered to the first semiconductor part and which includes a second wiring electrically connected to the first wiring. A metallic oxide is formed in at least one of the first wiring and the second wiring.

Abstract: Disclosed herein is a semiconductor memory device, including: a first electrode formed on a substrate; an ion source layer formed on an upper layer of the first electrode; and a second electrode formed on an upper layer of the ion source layer. Resistance change type memory cells in each of which either a surface of the first electrode or a surface of the ion source layer is oxidized to form a resistance change type memory layer in an interface between the first electrode and the ion source interface are arranged in a array.

Abstract: Disclosed herein is a semiconductor apparatus including: a first semiconductor part including a first wiring; a second semiconductor part which is adhered to the first semiconductor part and which includes a second wiring electrically connected to the first wiring; and a metallic oxide formed by a reaction between oxygen and a metallic material which reacts with oxygen more easily than hydrogen does, the metallic oxide having been diffused into a region which includes a joint interface between the first wiring and the second wiring and the inside of at least one of the first wiring and the second wiring.

Abstract: Disclosed herein is a semiconductor memory device, including: a first electrode formed on a substrate; an ion source layer formed on an upper layer of the first electrode; and a second electrode formed on an upper layer of the ion source layer. Resistance change type memory cells in each of which either a surface of the first electrode or a surface of the ion source layer is oxidized to form a resistance change type memory layer in an interface between the first electrode and the ion source interface are arranged in a array.

Abstract: Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

Abstract: Disclosed herein is a semiconductor apparatus including: a first semiconductor part including a first wiring; a second semiconductor part which is adhered to the first semiconductor part and which includes a second wiring electrically connected to the first wiring; and a metallic oxide formed by a reaction between oxygen and a metallic material which reacts with oxygen more easily than hydrogen does, the metallic oxide having been diffused into a region which includes a joint interface between the first wiring and the second wiring and the inside of at least one of the first wiring and the second wiring.

Abstract: A tube pump capable that prevents and minimizes torque variation in a drive motor regardless of the rotation direction of a rotor unit includes a casing in which a liquid-flowing tube is arranged; a drive motor provided with a driving shaft rotatable in forward and reverse directions; a rotor body; roller holders supported on the rotor body to swing with respect to the rotor body; pressing rollers rotatably supported on the roller holders to press the tube against an inner circumferential wall surface of the casing; and biasing units biasing the roller holders, when swung, to be returned to a pre-swing position. The roller holders are configured to swing with respect to the rotor body in a direction opposite to a rotation direction of the rotor body.

Abstract: A centrifugal fan includes an impeller including a main plate rotating about a center axis and a plurality of vanes fixed to the main plate in a circumferentially spaced-apart relationship, and a bell mouth arranged at an air intake side of the impeller to define an air inlet including a portion whose inner diameter is decreased toward the impeller. Each of the vanes preferably includes a protrusion protruding toward the bell mouth and extending into the air inlet.

Abstract: A memory device includes: a memory layer that is isolated for each memory cell and stores information by a variation of a resistance value; an ion source layer that is formed to be isolated for each memory cell and to be laminated on the memory layer, and contains at least one kind of element selected from Cu, Ag, Zn, Al and Zr and at least one kind of element selected from Te, S and Se; an insulation layer that isolates the memory layer and the ion source layer for each memory cell; and a diffusion preventing barrier that is provided at a periphery of the memory layer and the ion source layer of each memory cell to prevent the diffusion of the element.

Abstract: Disclosed herein is a semiconductor memory device, including: a first electrode formed on a substrate; an ion source layer formed on an upper layer of the first electrode; and a second electrode formed on an upper layer of the ion source layer. Resistance change type memory cells in each of which either a surface of the first electrode or a surface of the ion source layer is oxidized to form a resistance change type memory layer in an interface between the first electrode and the ion source interface are arranged in a array.

Abstract: An automatic icemaker of the present invention includes a control box, an ice-making tray supporting frame rotatably supported and rotated by the control box, at least one ice-making tray rotatably supported by the ice-making tray supporting frame, a rotation limiter fixed to the ice-making tray supporting frame and limiting the rotation of the ice-making tray, a stopper fixed to the control box, and a projection provided to the ice-making tray. Irregularities are provided to at least one of the contact surfaces of the stopper and projection.

Abstract: A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being excited while supplying the processing gas over the low-K dielectric film, wherein the plasma is excited within 90 seconds after placing the substrate upon the stage.

Abstract: A method for forming a porous insulating film includes an insulating film forming step and a hole forming step. During the insulating film forming step, plasma processing of an organic siloxane group compound and an organic compound having a polar group forms an insulating film having a siloxane structure. Molecules of the organic compound having a polar group are contained within this siloxane structure. During the hole forming step, excitation gas removes molecules of the organic compound having a polar group to provide holes in the insulating film. According to this method, an insulating film with a predetermined thickness and holes formed uniformly in the thickness direction can be obtained.

Abstract: Disclosed herein is a semiconductor device including: an insulating film configured to be provided on a substrate and be porosified through decomposition and removal of a pore-forming material; a covering insulating film configured to be provided on the insulating film; and conductive layer patterns configured to be provided in the covering insulating film and the insulating film and reach the substrate, wherein the insulating film includes a non-porous region in which the pore-forming material remains.

Abstract: A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being excited while supplying the processing gas over the low-K dielectric film, wherein the plasma is excited within 90 seconds after placing the substrate upon the stage.

Abstract: Disclosed herein is a semiconductor device including: an insulating film configured to be provided on a substrate and be porosified through decomposition and removal of a pore-forming material; a covering insulating film configured to be provided on the insulating film; and conductive layer patterns configured to be provided in the covering insulating film and the insulating film and reach the substrate, wherein the insulating film includes a non-porous region in which the pore-forming material remains.