Abstract: A method of processing a substrate includes attaching a first surface of a planarization film to a processing target substrate, disposing an electrostatic carrier onto a second surface opposite the first surface of the planarization film, fixing the processing target substrate to the electrostatic carrier by supplying power to the electrostatic carrier, and performing processing on the processing target substrate.

Abstract: To provide a semiconductor wafer surface protection sheet having good adhesion to irregularities on a patterned surface of a semiconductor wafer and having good peelability after wafer grinding. Specifically, a semiconductor wafer surface protection sheet is provided that includes a base layer having a tensile elasticity at 25° C., E(25), of 1 GPa or more; a resin layer A that satisfies the condition EA(60)/EA(25)<0.1, where EA(25) is a tensile elasticity at 25° C. and EA(60) is a tensile elasticity at 60° C., the EA(60) ranging from 0.005 MPa to 1 MPa; and a resin layer B having a tensile elasticity at 60° C., EB(60), of 1 MPa or more and having a thickness of 0.1 ?m to less than 100 ?m, the EB(60) being larger than the EA(60) of the resin layer A.

Abstract: To provide a semiconductor wafer surface protection sheet having good adhesion to irregularities on a patterned surface of a semiconductor wafer and having good peelability after wafer grinding. Specifically, a semiconductor wafer surface protection sheet is provided that includes a base layer having a tensile elasticity at 25 C°, E(25), of 1 GPa or more; a resin layer A that satisfies the condition EA(60)/EA(25) <0.1, where EA(25) is a tensile elasticity at 2 C° and EA(60) is a tensile elasticity at 60° C., the EA(60) ranging from 0.005 MPa to 1 MPa; and a resin layer B having a tensile elasticity at 60° C., EB(60), of 1 MPa or more and having a thickness of 0.1 ?m to less than 100 ?m, the EB(60) being larger than the EA(60) of the resin layer A.

Abstract: A protecting method for a semiconductor wafer in a step of processing a semiconductor wafer which involves a first step of adhering an adhesive film for protection of a semiconductor wafer in which an adhesive layer is formed on one surface of a base film to a circuit-formed surface of the semiconductor wafer, a second step of heating the semiconductor wafer to which the adhesive film for protection of the semiconductor wafer is adhered, a third step of processing a non-circuit-formed surface of the semiconductor wafer by fixing the semiconductor wafer to which the adhesive film for protection of the semiconductor wafer is adhered on a grinding machine or an abrasive machine, and a fourth step of peeling the adhesive film for protection of the semiconductor wafer from the semiconductor wafer. The method addresses warpage problems and can prevent breakage of wafers during conveyance even if the thickness of a wafer is reduced to approximately 150 ?m or less.

Abstract: A semiconductor wafer surface protection sheet which can prevent breakage of a semiconductor wafer even when a circuit-formed surface of the semiconductor wafer has a significant unevenness, and a method for protecting the semiconductor wafer by using such protection sheet. The semiconductor wafer surface protection sheet includes at least one resin layer (A) satisfying a relationship of G? (60)/G? (25)<0.1, where G? (25) is a storage elastic modulus at 25° C., and G? (60) is a storage elastic modulus at 60° C. The semiconductor wafer protecting method using such sheet is also provided.

Abstract: The present invention relates to an adhesive film capable of preventing damage to a non-metal-film-formed surface when forming a metal film on a semiconductor wafer and further capable of reducing contamination on the wafer surface. The adhesive film comprises a base film laminated with at least one film layer having a gas transmission rate of not more than 5.0 cc/m2·day·atm with an adhesive layer formed on one surface thereof. By protecting the non-metal-film-formed surface, a washing step using a solvent can be omitted and contamination on the non-metal-film-formed surface can also be reduced, thus resulting in enhancement of productivity and workability.

Abstract: The present invention relates to a surface protecting adhesive film for a semiconductor wafer in which an adhesive layer having a storage elastic modulus from 1×105 Pa to 1×107 Pa at 150° C. and a thickness of from 3 ?m to 100 ?m is formed on both a surface and back surface of a base film having a melting point of at least 200° C. and a thickness of 10 ?m to 200 ?m. According to the present invention, in a step of grinding the back side of a semiconductor wafer and removing a damaged layer generated on the back side, the semiconductor wafer can be prevented from being broken and being contaminated and the like even if a semiconductor wafer is thinned as low as 100 ?m.

Abstract: A surface protecting adhesive film for a semiconductor wafer in which an adhesive layer is formed on one surface of a base film, wherein the adhesive layer comprises 100 weight parts of a polymer (A) having a functional group capable of reacting with a cross-linking agent and a temperature in a range of from ?50° C. to 5° C. at which tan ? of a dynamic viscoelasticity is maximized, from 10 weight parts to 100 weight parts of a polymer (B) having a functional group capable of reacting with a cross-linking agent and a temperature in a range of from more than 5° C. to 50° C. at which tan ? of a dynamic viscoelasticity is maximized, and from 0.

Abstract: The present invention provides a pellicle, wherein a peel strength is from 0.004 N/mm to 0.10 N/mm when a non-surface-treated polyethylene terephthalate film having a thickness of 125 ?m is peeled in a direction of 180 degrees at a temperature of 23° C. after the polyethylene terephthalate film has been adhered to the mask adhering surface of the pellicle.

Abstract: The present invention is to provide a surface protecting film for a semiconductor wafer which can prevent breakage of the semiconductor wafer even when the semiconductor wafer is thinned to not more than 200 ?m, and a method of protecting the semiconductor wafer using the protecting film. The present invention relates to a surface protecting adhesive film for a semiconductor wafer comprising a base film having an adhesive layer formed on one surface thereof, wherein the base film comprises a layer (A) having a storage elastic modulus of from 1×107 Pa to 1×109 Pa at a temperature range of from 20° C. to 180° C.

Abstract: The present invention relates to a surface protecting adhesive film for a semiconductor wafer in which an adhesive layer having a storage elastic modulus from 1×105 Pa to 1×107 Pa at 150° C, and a thickness of from 3 ?m to 100 ?m is formed on both a surface and back surface of a base film having a melting point of at least 200° C. and a thickness of 10 ?m to 200 ?m. According to the present invention, in a step of grinding the back side of a semiconductor wafer and removing a damaged layer generated on the back side, the semiconductor wafer can be prevented from being broken and being contaminated and the like even if a semiconductor wafer is thinned as low as 100 ?m.

Abstract: The present invention is to provide a protecting method for a semiconductor wafer and an adhesive film for protection of a semiconductor wafer which makes it possible to straighten or avoid warpage in a semiconductor wafer and to prevent breakage of wafers during conveyance of wafers even if the thickness of a semiconductor wafer is thinned to approximately 150 ?m or less.

Abstract: An adhesive film for protecting the surface of a semiconductor wafer wherein the adhesive layer is formed on one surface of a substrate film, the substrate film comprising at least one layer which satisfies the following requisites (A) and at least one of (B) or (C): requisite (A): high elastic modulus properties in which the storage modulus is 1×109 Pa to 1×1010 Pa under the total temperature range of from 18 to 50° C. requisite (B): high elastic modulus properties in which the storage modulus within at least part of the temperature range of from 50 to 90° C. is not more than 1×108 Pa. requisite (C): high elastic modulus properties with expansibility by water absorption in which the size-changing ratio by absorbing water for four hours is 0.05 to 0.5% at 23° C. and 90% RH.

Abstract: This invention aims to provide a protecting method for a semiconductor wafer which can prevent breakage of a semiconductor wafer even when a semiconductor wafer is thinned to a thickness of 200 &mgr;m or less, and a surface protecting adhesive film for a semiconductor wafer used in the protecting method.

Abstract: An adhesive film for protecting the surface of a semiconductor wafer wherein the adhesive layer is formed on one surface of a substrate film, the substrate film comprising at least one layer which satisfies the following requisites (A) and at least one of (B) or (C):

Abstract: An object of the present invention is to provide a surface protecting adhesive film for a semiconductor wafer having excellent adhesive properties, breakage resistance and stain resistance. According to the invention, provided is a surface protecting adhesive film for a semiconductor wafer in which at least one layer of an intermediate layer and an adhesive layer are provided on one surface of a base film, a minimum value (G′ min) of storage elastic modulus of an adhesive layer (B) at from 50° C. to 100° C. is from 0.07 MPa to 5 MPa, storage elastic modulus of at least one layer (C) of the intermediate layer at 50° C. is from 0.001 MPa to less than 0.

Abstract: This invention aims to provide a protecting method for a semiconductor wafer which can prevent breakage of a semiconductor wafer even when a semiconductor wafer is thinned to a thickness of 200 &mgr;m or less, and a surface protecting adhesive film for a semiconductor wafer used in the protecting method.