Patents by Inventor Yoshihisa Tawada
Yoshihisa Tawada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8933437Abstract: An organic semiconductor device according to the present invention includes a semiconductor layer 14 interposed between two electrodes 12 and 15, and the semiconductor layer 14 contains a trioxotriangulene (TOT) derivative, which is a neutral radical compound, as a semiconductor material. The semiconductor layer 14 acts as an n-type semiconductor and coacts with a p-type semiconductor layer 13 to exhibit a photoelectric conversion effect. The organic semiconductor device is characterized as including a semiconductor layer that has a narrow band gap, has light absorption performance in an infrared region, and is high in carrier mobility.Type: GrantFiled: November 25, 2009Date of Patent: January 13, 2015Assignee: Kaneka CorporationInventors: Yasushi Morita, Masaaki Yokoyama, Shozo Yanagida, Yoshihisa Tawada, Kenji Yamamoto, Ryotaro Tsuji
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Publication number: 20120126206Abstract: An organic semiconductor device according to the present invention includes a semiconductor layer 14 interposed between two electrodes 12 and 15, and the semiconductor layer 14 contains a trioxotriangulene (TOT) derivative, which is a neutral radical compound, as a semiconductor material. The semiconductor layer 14 acts as an n-type semiconductor and coacts with a p-type semiconductor layer 13 to exhibit a photoelectric conversion effect. The organic semiconductor device is characterized as including a semiconductor layer that has a narrow band gap, has light absorption performance in an infrared region, and is high in carrier mobility.Type: ApplicationFiled: November 25, 2009Publication date: May 24, 2012Applicants: OSAKA UNIVERSITY, KANEKA CORPORATIONInventors: Yasushi Morita, Masaaki Yokoyama, Shozo Yanagida, Yoshihisa Tawada, Kenji Yamamoto, Ryotaro Tsuji
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Patent number: 6035172Abstract: Disclosed is a developing roller to be employed in a developing device which is incorporated in electrophotographic apparatus such as printers, duplicators, receivers for facsimiles or the like, and in which toner carried on the surface of the roller being or not being kept in contact with a photoreceptor is transferred at least to the photoreceptor. The developing roller is characterized in that an elastic conductive layer is formed around the conductive shaft of the roller, that the outer surface of the elastic conductive layer is covered with a surface layer, and that the surface layer is formed from a resin composition of which the contact angle with a drop of a liquid consisting essentially of a component similar to the resin component constituting the toner to be used in the developing device is not smaller than 35.degree.. In the developing device, toner filming occurs little around the developing roller, and the initial density of the images formed is good.Type: GrantFiled: October 23, 1998Date of Patent: March 7, 2000Assignee: Kaneka CorporationInventors: Kazuyoshi Mimura, Yoshihisa Tawada, Kenji Kobayashi, Hiroshi Ogoshi, Susumu Fukuda
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Patent number: 5810705Abstract: A developing apparatus of a toner delivery system by contacting a developer roller with an electrostatic latent image-carrying member eliminates a protective layer in the conventional concept from a surface of the developing roller, and provides a covering layer which is formed by adhering particles of toner or a material having electrical characteristics and mechanical characteristics equal to those of the toner on the surface of the developing roller. Those particles are adhered utilizing a surface tackiness of an elastomer layer itself which is a structural element of the developing roller.Type: GrantFiled: August 28, 1996Date of Patent: September 22, 1998Assignee: Kanegafuchi Kagaku Kogyo Kabushiki KaishaInventors: Kazuyoshi Mimura, Yoshihisa Tawada, Shigeo Akimoto, Kenji Kobayashi, Yasunori Matsunari, Susumu Fukuda
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Patent number: 5507880Abstract: A solar module made by the sequential stacking of a conducting metal oxide layer, an amorphous semiconductor layer, a back metal electrode, and a passivating resin layer on a transparent substrate, in which the passivating resin layer includes a water vapor barrier layer having a permeability to water vapor of not more than 1 g/m.sup.2 day measured at a thickness of 100 .mu.m, with the water vapor barrier layer being a polymer having a backbone consisting essentially of carbon and hydrogen. This barrier layer prevents the oxidation of the back metal electrode by water vapor, so that the stability of the module is improved in outdoor use.Type: GrantFiled: October 14, 1994Date of Patent: April 16, 1996Assignee: Kanegafuchi Kagaku Kogyo Kabushiki KaishaInventors: Atsuo Ishikawa, Toshihito Endo, Hideo Yamagishi, Yoshihisa Tawada
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Patent number: 5419781Abstract: A flexible photovoltaic device includes a flexible substrate and a photovoltaic device body. The flexible substrate is a metal foil or film provided with an electric insulating layer of a material having an electric conductivity of not more than 10.sup.-7 (.OMEGA..cm.).sup.-1 at the time of light impinging and selected from a heat resistant polymer, a metal oxide, a crystalline or amorphous silicon compound and an organometallic compound.Type: GrantFiled: February 4, 1994Date of Patent: May 30, 1995Assignee: Kanegafuchi Kagaku Kogyo Kabushiki KaishaInventors: Yoshihiro Hamakawa, Yoshihisa Tawada, Kazunori Tsuge, Masanobu Izumina
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Patent number: 5382787Abstract: The invention provides a temperature switch material capable of detecting a very low temperature not higher than 150 K. It also provides a light switch material for detecting light in the ultraviolet region. It further provides a switch material suited for use as a substrate for thin oxide layer formation thereon. The switching material utilizes an abrupt change in photoelectric current as produced upon phase transition of SrTiO.sub.3 at a low temperature. The photoelectric switch or temperature switch utilizes the change in photoconduction spectrum upon irradiation of SrTiO.sub.3 with light in the 3 eV-5 eV ultraviolet region. A switch is available by varying the intensity of irradiating light thereby controlling the transition temperature.Type: GrantFiled: July 7, 1992Date of Patent: January 17, 1995Assignee: Kanegafuchi Chemical Industry Co., Ltd.Inventors: Jun Takada, Akihiko Nakajima, Yoshihisa Tawada
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Patent number: 5264710Abstract: Amorphous semiconductor thin film is exposed to an atmosphere of hydrogen radical during or after the formation of thin film, or is subject to light irradiation having a density of not less than 10 W/cm.sup.2 at a wavelength of 300 to 700 nm during the formation of the thin film. The obtained thin film has improved, i.e. small, photo deterioration. The semiconductor device using the above thin film is preferably applied to solar cells or thin film transistors.Type: GrantFiled: April 7, 1992Date of Patent: November 23, 1993Assignee: Kanegafuchi Kagaku Kogyo Kabushiki KaishaInventors: Hideo Yamagishi, Akihiko Hiroe, Hitoshi Nishio, Keiko Miki, Kazunori Tsuge, Yoshihisa Tawada
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Patent number: 5250120Abstract: This invention relates to a photovoltaic device, such as a solar cell or a photosensor, which comprises an amorphous silicon semiconductor photosensitive layer and, as disposed on respective sides thereof, a transparent electrode and a rear electrode. The rear electrode is a multi-layer structure constructed by alternately successive depositions, each in a thickness of 0.3 to 50 nm, of two or more metals selected from the group consisting of Cu, Ag, and Au. In using such a Cu/Ag multi-layer structure or an Au/Ag multi-layer structure as the rear electrode, the thickness of each Cu or Au layer is controlled at 0.3 to 20 nm and that of each Ag layer at 1 to 50 nm. The total thickness of the rear electrode is 20 nm to 1 .mu.m. This construction insures improved photoelectric conversion efficiency and improved reliability of the device.Type: GrantFiled: December 5, 1991Date of Patent: October 5, 1993Assignee: Kanegafuchi Chemical Industry Co., Ltd.Inventors: Jun Takada, Akihiko Nakajima, Katsuhiko Hayashi, Keizo Asaoka, Yoshihisa Tawada
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Patent number: 5127964Abstract: A flexible photovoltaic device includes a flexible substrate and a photovoltaic device body. The flexible substrate is a metal foil or film provided with an electric insulating layer of a material having an electric conductivity of not more than 10.sup.-7 (.OMEGA..multidot.cm.).sup.-1 at the time of light impinging and selected from a heat resistant polymer, a metal oxide, a crystalline or amorphous silicon compound and an organometallic compound.Type: GrantFiled: February 8, 1991Date of Patent: July 7, 1992Assignee: Kanegafuchi Kagaku Kogyo Kabushiki KaishaInventors: Yoshihiro Hamakawa, Yoshihisa Tawada, Kazunori Tsuge, Masanobu Izumina
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Patent number: 5128736Abstract: In a light sensitive semiconductor unit having a plurality of light sensitive semiconductor cells connected in series, the light receiving area or size of the light sensitive semiconductor cells is increased as the distance from the center of the unit increases so that every light sensitive semiconductor cell can generate generally equal short circuit current even if the light intensity is decreased as the distance between the light sensitive semiconductor cell and light source increases, whereby a high operating voltage can be obtained.Type: GrantFiled: January 30, 1991Date of Patent: July 7, 1992Assignee: Kanegafuchi Chemical Industry Co., Ltd.Inventors: Eiichi Yoshida, Tomoyoshi Zenki, Satoru Murakami, Minori Yamaguchi, Takehisa Nakayama, Yoshihisa Tawada
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Patent number: 5126815Abstract: A semiconductor light beam position sensor element comprises a semiconductor layer of successively formed p-, i- and n-type semiconductor layers and an electrically conductive layer on either side of the semiconductive layer. At least one of the conductive layers is made of a transparent material, and at least the other conductive layer and the semiconductor layer are provided with a plurality of common apertures extending in the thickness direction. At least one of the conductor layers is provided with one or two pairs of electrodes of opposite polarity and positioned in its marginal regions. The sensor element is light transparent. A feedback circuit is provided to insure that the incident light is constant.Type: GrantFiled: November 5, 1990Date of Patent: June 30, 1992Assignee: Kanegafuchi Chemical Industry Co., Ltd.Inventors: Satoru Murakami, Minori Yamaguchi, Akimine Hayashi, Masataka Konda, Yoshihisa Tawada
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Patent number: 5124269Abstract: A semiconductor device producing method wherein a patterned transparent electrode, a patterned amorphous silicon semiconductor layer and a patterned backside electrode are formed on a substrate sequentially in this order, and the patterning of at least one of the amorphous silicon semiconductor layer and the backside electrode is carried out in a step of forming at least one of the amorphous silicon semiconductor layer and the backside electrode with a wire mask being brought into substantially close contact with a surface subjected to film forming and a step of removing a thin film formed at a region between the wire mask and the surface subjected to film forming in the forming step; and a film forming apparatus used in the producing method comprising a holder which holds a substrate having a surface subjected to film forming, a mechanism for fixing and positioning the substrate on the holder and a plurality of wires which are disposed on the film forming surface side of the substrate and are to be brought iType: GrantFiled: December 28, 1990Date of Patent: June 23, 1992Assignee: Kanegafuchi Kagaku Kogyo KabushikiInventors: Kenji Kobayashi, Kazunori Tsuge, Yoshihisa Tawada
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Patent number: 5091764Abstract: A semiconductor device having a transparent electrode comprising SnO.sub.2, at least one semiconductor layer and a back electrode on a glass substrate wherein the dopant density of the transparent electrode is not more than 0.5 weight %, so that light absorption in the transparent electrode is lowered.Type: GrantFiled: September 28, 1989Date of Patent: February 25, 1992Assignee: Kanegafuchi Kagaku Kogyo Kabushiki KaishaInventors: Keizo Asaoka, Kazunori Tsuge, Yoshihisa Tawada
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Patent number: 5066861Abstract: In an X ray detecting device comprising XL converting unit for converting the X rays into visible light corresponding to the intensity of the X rays and a LE converting unit for converting the visible light into an electrical signal corresponding to the intensity of the visible light, the base layer of the LE converting unit is formed of a material such that the base layer does not substantially absorb the X rays so that the image of the LE converting unit does not appear on the picture of the object.Type: GrantFiled: January 19, 1989Date of Patent: November 19, 1991Assignee: Kanegafuchi Chemical Industry Co., Ltd.Inventors: Takehisa Nakayama, Akimine Hayashi, Masataka Kondo, Satoru Murakami, Minori Yamaguchi, Yoshihisa Tawada, Masahiko Hosomi
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Patent number: 5039852Abstract: In the semiconductor image sensor according to the invention in which the photoconductivity of that region of the active layer producing carriers upon exposure to light which is on the light-transmitting electrode side is lower than that of the remaining region, crosstalk can be inhibited without mechanically dividing the semiconductor layer and without causing any significant decrease in sensor sensitivity.Type: GrantFiled: December 14, 1989Date of Patent: August 13, 1991Assignee: Kanegafuchi Chemical Industry Co., Ltd.Inventors: Masataka Kondo, Minori Yamaguchi, Yoshihisa Tawada
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Patent number: 5032884Abstract: A semiconductor device comprising a pin-type or nip-type amorphous-containing semiconductor layers; characterized in that (1) at least one interlayer made of semiconductor or insulator having higher electrical resistivity than a semiconductor which adjoins the interlayer is/are interposed between semiconductor layers or between a semiconductor and an electrode, (2) an amount of dopant in a p-type or n-type layer is least at a junction interface of p/i or n/i and increases gradually toward a junction interface of p/electrode or n/electrode, or (3) a p-type semiconductor layer being the same conductive type as the p-type semiconductor and having higher impurity density and/or an n-type semiconductor layer being the same conductive type as the n-type semiconductor layer and having higher impurity density is/are interposed between the p-type semiconductor layer and the electrode at the side of the p-type semiconductor layer and/or between the n-type semiconductor layer and the electrode at the side of the n-typeType: GrantFiled: February 7, 1990Date of Patent: July 16, 1991Assignee: Kanegafuchi Kagaku Kogyo Kabushiki KaishaInventors: Hideo Yamagishi, Masataka Kondo, Kunio Nishimura, Akihiko Hiroe, Keizou Asaoka, Kazunori Tsuge, Yoshihisa Tawada, Minori Yamaguchi
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Patent number: 5025297Abstract: A transparent semiconductor light beam position sensor element comprises a semiconductor layer consisting of p-, i- and n-type semiconductor layers successively bonded in junction and an electrically conductive layer disposed on either side of the semiconductive layer, at least one of the conductive layers being material transparent material, at least the other conductive layer and the semiconductor layer being provided with a multiplicity of common apertures running in the thickness direction and at least one conductive layer being provided with one pair or two pairs of electrodes of opposite polarities as disposed in its marginal regions.Type: GrantFiled: March 7, 1989Date of Patent: June 18, 1991Assignee: Kanegafuchi Chemical Industry Co., Ltd.Inventors: Satoru Murakami, Minori Yamaguchi, Akimine Hayashi, Masataka Kondo, Yoshihisa Tawada
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Patent number: 5015838Abstract: A color sensor of the present invention is a semiconductor element comprising a semiconductor wherein a plurality of pn or pin junctions are laminated, and conductive layers which are laminated on both surfaces of the semiconductor, characterized in that the semiconductor element is arranged in a way that the quantity of production of photocarriers is increased in order from the light incident side for the whole wave length band to be measured, and that value of current is detected by changing voltage between both conductivity layers. According to the color sensor of the present invention, the construction can be simplified, it is easily integrated and large-scaled, manufacturing process can be simplified, and the yield of color sensors increases, so that there can be realized a color sensor with low cost.Type: GrantFiled: January 27, 1989Date of Patent: May 14, 1991Assignee: Kanegafuchi Kagaku Kogyo Kabushiki KaishaInventors: Hideo Yamagishi, Akihiko Hiroe, Hitoshi Nishio, Satoru Murakami, Keiko Miki, Minori Yamaguchi, Seishiro Mizukami, Yoshihisa Tawada
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Patent number: 4965225Abstract: An amorphous semiconductor film is prepared by the usual procedure and, then, established by exposing it to sufficient light intermittently to age the same. The degradation of the electrical characteristics of the semiconductor film on prolonged exposure to light is minimized by the above technique. The preferred intermittent light is a pulsed light. The above light treatment may be applied to an individual semiconductor film, a laminated assembly including at least the pin layers, a finished semiconductor device such as a solar cell or a semiconductor device prior to attachment of an electrode.Type: GrantFiled: September 28, 1989Date of Patent: October 23, 1990Assignee: Kanegafuchi Chemical Industry Co., Ltd.Inventors: Hideo Yamagishi, William A. Nevin, Hitoshi Nishio, Keiko Miki, Kazunori Tsuge, Yoshihisa Tawada