Abstract: The present invention aims to provide a foam, a laminated foam, and a resin sheet that are capable of exhibiting particularly excellent vibration-damping properties while being lightweight and are useful for recycling interlayer films for a laminated glass. The present invention also aims to provide a building material for housing including any of the foam, the laminated foam, and the resin sheet. Provided is a foam having a plurality of cells, the foam containing a polyvinyl acetal; a plasticizer; and a thermoplastic elastomer and/or a liquid crystal polymer.

Abstract: There is provided a head including: a piezoelectric layer; a plurality of individual electrodes located below the piezoelectric layer in an up-down direction; a common electrode located below the piezoelectric layer. The plurality of individual electrodes includes: a first individual electrode array including a plurality of first individual electrodes aligned in a first direction; and a second individual electrode array including a plurality of second individual electrodes aligned in the first direction. The common electrode includes: a plurality of first facing portions which are demarcated to correspond to the plurality of first electrodes, respectively; a plurality of second facing portions which are demarcated to correspond to the plurality of second electrodes, respectively; and a connecting portion located between the plurality of first facing portions and the plurality of second facing portions, and connecting the plurality of first facing portions and the plurality of second facing portions.

Abstract: A power semiconductor device includes a power semiconductor chip and a fourth electrode. The power semiconductor chip has a first surface and a second surface opposite to each other and includes a first electrode and a second electrode on the first surface thereof, and a third electrode on the second surface thereof. The first electrode is provided in a main cell area of the first surface. The fourth electrode is provided on the first surface of the power semiconductor chip, is electrically connected to the first electrode, and has an overhanging portion that extends outwardly from an outer edge of the power semiconductor chip.

Abstract: A piezoelectric actuator is provided, including a vibration plate, a piezoelectric layer, a plurality of individual electrodes arranged in two arrays, first and second common electrodes which have first and second facing portions facing parts of the individual electrodes and first and second connecting portions connecting the first and second facing portions respectively, and first and second wiring portions which are arranged on the vibration plate and which are connected to the first and second common electrodes respectively via first and second connecting wirings, wherein one of the first connecting wirings connects the first connecting portion and one of the first wiring portion while striding over the second connecting portion.

Abstract: The present invention provides an electric power conversion device and an electric power generation system which are capable of suppressing ripples in a detected voltage and detection delay.

Abstract: The present invention provides an electric power conversion device and an electric power generation system which are capable of suppressing ripples in a detected voltage and detection delay.

Abstract: A semiconductor device, including a conductive plate having a front surface that includes a plurality of bonding regions and a plurality of non-bonding regions in peripheries of the bonding regions, a plurality of semiconductor elements mounted on the conductive plate in the bonding regions, and a resin encapsulating therein at least the plurality of semiconductor elements and the front surface of the conductive plate. The conductive plate has, at the front surface thereof in the non-bonding regions, a plurality of holes.

Abstract: A piezoelectric actuator is provided, including a vibration plate, a piezoelectric layer, a plurality of individual electrodes arranged in two arrays, first and second common electrodes which have first and second facing portions facing parts of the individual electrodes and first and second connecting portions connecting the first and second facing portions respectively, and first and second wiring portions which are arranged on the vibration plate and which are connected to the first and second common electrodes respectively via first and second connecting wirings, wherein one of the first connecting wirings connects the first connecting portion and one of the first wiring portion while striding over the second connecting portion.

Abstract: An apparatus for evaluating gas barrier properties, a support having a polymer for supporting a sample, a chamber on a permeation side, and a detection unit, the support being joined to the opening of the chamber on a permeation side; in which a polymer film is provided between the support and a sample; a chamber on a supply side is provided, being disposed so as to be closably attachable to the sample and able to go up and down; and an external chamber covers a region interposed between the polymer film and the support; and a method of evaluating gas barrier properties using the same.

Abstract: A piezoelectric actuator is provided, including a vibration plate, a piezoelectric layer, a plurality of individual electrodes arranged in two arrays, first and second common electrodes which have first and second facing portions facing parts of the individual electrodes and first and second connecting portions connecting the first and second facing portions respectively, and first and second wiring portions which are arranged on the vibration plate and which are connected to the first and second common electrodes respectively via first and second connecting wirings, wherein one of the first connecting wirings connects the first connecting portion and one of the first wiring portion while striding over the second connecting portion.

Abstract: An apparatus for evaluating gas barrier properties, a support having a polymer for supporting a sample, a chamber on a permeation side, and a detection unit, the support being joined to the opening of the chamber on a permeation side; in which a polymer film is provided between the support and a sample; a chamber on a supply side is provided, being disposed so as to be closely attachable to the sample and able to go up and down; and an external chamber covers a region interposed between the polymer film and the support; and a method of evaluating gas barrier properties using the same.

Abstract: A semiconductor device, including a conductive plate having a front surface that includes a plurality of bonding regions and a plurality of non-bonding regions in peripheries of the bonding regions, a plurality of semiconductor elements mounted on the conductive plate in the bonding regions, and a resin encapsulating therein at least the plurality of semiconductor elements and the front surface of the conductive plate. The conductive plate has, at the front surface thereof in the non-bonding regions, a plurality of holes.

Abstract: A piezoelectric actuator is provided, including a vibration plate, a piezoelectric layer, a plurality of individual electrodes arranged in two arrays, first and second common electrodes which have first and second facing portions facing parts of the individual electrodes and first and second connecting portions connecting the first and second facing portions respectively, and first and second wiring portions which are arranged on the vibration plate and which are connected to the first and second common electrodes respectively via first and second connecting wirings, wherein one of the first connecting wirings connects the first connecting portion and one of the first wiring portion while striding over the second connecting portion.

Abstract: A piezoelectric actuator is provided, including a vibration plate, a piezoelectric layer, a plurality of individual electrodes arranged in two arrays, first and second common electrodes which have first and second facing portions facing parts of the individual electrodes and first and second connecting portions connecting the first and second facing portions respectively, and first and second wiring portions which are arranged on the vibration plate and which are connected to the first and second common electrodes respectively via first and second connecting wirings, wherein one of the first connecting wirings connects the first connecting portion and one of the first wiring portion while striding over the second connecting portion.

Abstract: A piezoelectric actuator is provided, including a vibration plate, a piezoelectric layer, a plurality of individual electrodes arranged in two arrays, first and second common electrodes which have first and second facing portions facing parts of the individual electrodes and first and second connecting portions connecting the first and second facing portions respectively, and first and second wiring portions which are arranged on the vibration plate and which are connected to the first and second common electrodes respectively via first and second connecting wirings, wherein one of the first connecting wirings connects the first connecting portion and one of the first wiring portion while striding over the second connecting portion.

Abstract: A MOS gate structure including a p base region, a p epitaxial layer, an n++ source region, a p+ contact region, an n inversion region, a gate insulating film, and a gate electrode and a front surface electrode are provided on the front surface of an epitaxial substrate obtained by depositing an n? epitaxial layer on the front surface of a SiC substrate. A first metal film is provided on the front surface electrode so as to cover 10% or more, preferably, 60% to 90%, of an entire upper surface of the front surface electrode. The SiC-MOSFET is manufactured by forming a rear surface electrode, forming the first metal film on the surface of the front surface electrode, and annealing in a N2 atmosphere. According to this structure, it is possible to suppress a reduction in gate threshold voltage in a semiconductor device using a SiC semiconductor.

Abstract: A piezoelectric actuator is provided, including a vibration plate, a piezoelectric layer, a plurality of individual electrodes arranged in two arrays, first and second common electrodes which have first and second facing portions facing parts of the individual electrodes and first and second connecting portions connecting the first and second facing portions respectively, and first and second wiring portions which are arranged on the vibration plate and which are connected to the first and second common electrodes respectively via first and second connecting wirings, wherein one of the first connecting wirings connects the first connecting portion and one of the first wiring portion while striding over the second connecting portion.

Abstract: A power semiconductor module includes a cooler; a plurality of power semiconductor units fixed on the cooler; and a bus bar unit connected electrically to the plurality of power semiconductor units. Each of the plurality of power semiconductor units includes a multilayered substrate including a circuit plate, an insulating plate, and a metal plate laminated in respective order; a semiconductor element fixed to the circuit plate; a wiring member having a printed circuit board and a plurality of conductive posts; external terminals connected electrically and mechanically to the circuit plate; and an insulating sealing material. The bus bar unit includes a plurality of bus bars mutually connecting the external terminals of the plurality of power semiconductor units.

Abstract: A semiconductor device manufacturing method, sequentially includes a semiconductor element preparation step of preparing a first semiconductor element on which is formed a plurality of metal electrodes, a step of covering a surface of the first semiconductor element on which the metal electrode is not formed with a first insulating member, and a step of forming a second metal layer that conductively connects the metal electrode of the first semiconductor element and a first metal layer on an insulated circuit substrate across the second insulating member.

Abstract: The present invention provides a body lumen graft base that is a thin film, has adequate flexibility and low permeability, and can be inserted in a catheter with a small diameter. The body lumen graft base of the present invention is obtained by subjecting at least one surface of a woven fabric comprising a fiber having a total fineness of 1 to 80 decitex and a single fiber fineness of less than 0.1 decitex to press treatment using a calender machine.