Abstract: Provided is a tin compound, which is represented by the following general formula (1): in the formula (1), R1 and R2 each independently represent an alkyl group having 1 to 5 carbon atoms or an alkylsilyl group having 3 to 12 carbon atoms, R3 and R4 each independently represent an alkyl group having 1 to 5 carbon atoms, and R5 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1): M(R1)x1[A1-N(R2)(R3)]y1 ??(1) in the formula (1), R1, R2, and R3 each independently represent a linear or branched alkyl group having 1 to 4 carbon atoms, A1 represents a linear or branched alkylene group having 1 to 5 carbon atoms, x1 represents an integer of from 0 to 2, y1 represents an integer of from 1 to 3, and M represents an indium atom or a zinc atom, provided that when M represents an indium atom, a compound in which x1 represents 2, y1 represents 1, and R1, R2, and R3 each represent a methyl group is excluded.

Abstract: Provided is a method of producing a thin-film containing a hafnium atom on a surface of a substrate by an atomic layer deposition method, including: a step 1 of causing a raw material gas obtained by vaporizing a thin-film forming raw material containing a hafnium compound represented by the following general formula (1) to adsorb to the surface of the substrate to form a precursor thin-film; a step 2 of evacuating the raw material gas remaining unreacted; and a step 3 of causing the precursor thin-film to react with a reactive gas at a temperature of 300° C. or more and less than 450° C. to form the thin-film containing a hafnium atom on the surface of the substrate: wherein R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and R3 and R4 each independently represent an alkyl group having 1 to 3 carbon atoms.

Abstract: Provided is a method of producing a thin-film containing a zirconium atom on a surface of a substrate by an atomic layer deposition method, including: a step 1 of causing a raw material gas obtained by vaporizing a thin-film forming raw material containing a zirconium compound represented by the following general formula (1) to adsorb to the surface of the substrate to form a precursor thin-film; a step 2 of evacuating the raw material gas remaining unreacted; and a step 3 of causing the precursor thin-film to react with a reactive gas at a temperature of 240° C. or more and 450° C. or less to form the thin-film containing a zirconium atom on the surface of the substrate: wherein R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and R3 and R4 each independently represent an alkyl group having 1 to 3 carbon atoms, provided that a zirconium compound in which both of R1 and R2 represent hydrogen atoms is excluded.

Abstract: The present invention provides an amidinate compound represented by the following general formula (1) or a dimer compound thereof, and a method of producing a thin-film including using the compound as a raw material: where R1 and R2 each independently represent an alkyl group having 1 to 5 carbon atoms, R3 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M represents a metal atom or a silicon atom, and “n” represents the valence of the atom represented by M, provided that at least one hydrogen atom of R1 to R3 is substituted with a fluorine atom.

Abstract: The present invention provides a tin compound represented by the following general formula (1) (in the formula (1), R1 to R4 each independently represent a hydrogen atom or an alkyl group having 1 to 12 carbon atoms, and R5 represents an alkanediyl group having 1 to 15 carbon atoms), a thin-film forming raw material including the compound, a thin-film formed by using the thin-film forming raw material, a method of using the compound as a precursor for producing the thin-film, and a method of producing a thin-film including: introducing a raw material gas obtained by vaporizing the thin-film forming raw material into a treatment atmosphere having a substrate set therein; and subjecting the tin compound in the raw material gas to decomposition and/or a chemical reaction in the treatment atmosphere, to thereby produce a thin-film containing a tin atom on a surface of the substrate.