Yoshiki Ueno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
Abstract: Provided is a method for producing saccharides containing glucose as the main components which can increase the generated amount of saccharides containing glucose as the main components even when an enzymatic saccharification reaction is performed with a small amount of enzyme. A method for producing saccharides containing glucose as the main components is provided which includes mixing biomass containing cellulose and/or hemicellulose and an aqueous enzyme solution, and then performing an enzymatic saccharification reaction with an enzyme contained in the aqueous enzyme solution while maintaining the state where the mixture of the biomass containing cellulose and/or hemicellulose and the aqueous enzyme solution is allowed to stand still in a reaction vessel.
Abstract: To achieve efficient use of enzyme in obtaining a sugar solution through a reaction of the enzyme and biomass containing cellulose. In obtaining a sugar solution through a reaction of enzyme and biomass containing cellulose, the biomass and the enzyme are caused to react in a first reaction tank, whereby a sugar solution in which the enzyme is dispersed and a residue containing the unreached biomass adsorbing the enzyme are generated, these sugar solution and residue are next separated, a pH adjusting solution is supplied to the residue in a second reaction tank to prepare a dilute solution whose sugar concentration is lower than that of the sugar solution, and in this dilute solution, a sugar solution is generated through a reaction between the residue and the enzyme adsorbed to the residue.
Abstract: This monosaccharide production method is a method for producing monosaccharides from biomass having a first step 3 in which a raw material biomass is pretreated in 65 to 85 (w/w) % sulfuric acid at a temperature of 30 to 70° C., and a second step 4 in which the first step treatment product pretreated in the first step is subjected to saccharification treatment in 20 to 60 (w/w)% sulfuric acid at a temperature of 40 to 100° C.
Abstract: An object of the present invention is to provide an aquarous rust inhibitor having low toxicity and excellent rust resistance, which contains saturated fatty acid, saturated dicarboxylic acid and salt thereof, derivatives of ethylenediamine tetraacetic acid, tolyltriazole or benzotriazole, fatty acid metal salt, and water.
Abstract: A metal working fluid, having excellent properties, contains a metal stearate, a carbonate, a hydrogencarbonate, and a surfactant. The metal working fluid may further contain ethyleneglycol and a rust inhibitor.
Abstract: Herein disclosed is a method for depositing a high Tc superconducting thin film. The superconducting thin film is deposited on one surface of a substrate. The substrate is exposed to an electromagnetic wave to heat the substrate during the process for depositing the superconducting thin film. Before the processes for depositing the superconducting thin film and exposing the substrate to the electromagnetic wave, a dummy film is formed on the other surface of the substrate. The dummy film has absorbency of the electromagnetic wave which is higher than that of the substrate. The dummy film together with the substrate is exposed to the electromagnetic wave while the superconducting thin film is deposited on the one surface of the substrate. The superconducting thin film thus deposited has superconductivity and high quality crystal structure.
November 26, 1996
Date of Patent:
May 4, 1999
Advanced Mobile Telecommunication Technology Inc.
Abstract: A first semiconductor layer and a second semiconductor layer are laminated on a semiconductor wafer in that order. A resist pattern having an opening is formed on the second semiconductor layer. The second semiconductor layer is etched through the opening in the formed resist pattern to expose the first semiconductor layer. A surface oxide film is formed on the exposed surface of the first semiconductor layer and then selectively etched away. Alternatively, the exposed surface of the first semiconductor layer is subjected to a separate oxidization treatment and the resulting surface oxide film is selectively removed in the subsequent etching.
June 13, 1996
Date of Patent:
December 1, 1998
Nippondenso Co., Ltd., Research Development Corporation of Japan
Abstract: The semiconductor laser device provides a large output laser beam approximating a circular shape. Formed on an n-GaAs substrate is an n-GaAs layer, further thereon in mesa type with an n-Al.sub.0.4 Ga.sub.0.6 As clad layer, an n-Al.sub.0.2 Ga.sub.0.8 As optical guide layer, an active layer formed of Al.sub.0.2 Ga.sub.0.8 As/GaAs multi-quantum well structure, a p-Al.sub.0.2 Ga.sub.0.8 As optical guide layer, a p-Al.sub.0.4 Ga.sub.0.6 As clad layer, and a p-GaAs layer. A thickness of the active layer is made equal to 127.5 nm, and a sum of thicknesses of the active layer and the optical guide layers and is made equal to or more than 1.5 .mu.m. On the n-GaAs layer and the upper surface of mesa shaped portion are formed an insulating film and a p-type electrode, the stripe width of which is equal to 400 .mu.m.
Abstract: A pseudomorphic HEMT of a structure which prevents the distribution of 2DEG in the channel layer from being concentrated near the hetero-interface relative to a doping layer and which, at the same time, enables the thickness of the channel layer to which distortion is imparted to be decreased. In an n-InAlAs/InGaAs pseudomorphic structure grown on an InP substrate 1, an InGaAs spacer layer 4 having an In composition ratio smaller than that of an InGaAs channel layer 3 is inserted in an InAlAs/InGaAs hetero-interface. The InGaAs channel layer 3 has an In composition ratio of 0.80 to exhibit a high mobility. Another InAlAs buffer layer 2, spacer layer 5 and doping layer 6 have an In composition ratio of 0.52 which is in lattice-match with the substrate, and InGaAs spacer layer 4 and cap layer 7 have an In composition ratio of 0.53 which is in lattice-match with the substrate. This constitution makes it possible to control the two-dimensional electron gas and to further increase the mobility.
Abstract: A compound semiconductor device including a semiconductor substrate having (100) plane as a crystal growth plane, a first semiconductor layer as an electron traveling layer and a second semiconductor layer for supplying electrons to the electron traveling layer. The first semiconductor layer is formed on the semiconductor substrate and has a different lattice constant from the semiconductor substrate so that a first strain is applied in the first semiconductor layer in a first strain direction. The second semiconductor layer is formed on the first semiconductor layer and has a different lattice constant from the first semiconductor layer to thereby apply a second strain to the second semiconductor layer. The second strain has a direction that is inverse to the first strain direction. In addition, the thickness of the semiconductor layer is defined so as to compensate for the first strain applied to the first semiconductor layer by the second strain applied to the second semiconductor.
Abstract: An antiglare mirror for an automobile including a metal layer for reflecting incident light and a liquid crystal layer in front of the reflecting surface of the metal layer. The reflected light is colored by forming a transparent dielectric layer on the reflecting surface of the metal layer. The transparent dielectric layer has a higher refractivity than that of the liquid crystal layer. A desired color tone is obtained by selecting the thickness of the transparent dielectric layer.
Abstract: A reflecting mirror for use as a rearview mirror in an automobile, the mirror having a plurality of thin layers arranged on a glass plate. One of the layers is made of a transparent dielectric material having a refractive index which is not less than a refractive index of WO.sub.2 and the other is made of a metal material having a reflecting factor ranging between 50-70%. The light introduced into the mirror is reflected at different borders formed in the mirror between the layers so as to provide lights of different phases. Therefore, there is an interference, and, consequently, the mirror provides a certain selected tone in accordance with the value of the optical thickness of the transparent dielectric layer, resulting in an anti-glare effect and a deep color.
Abstract: A reflecting mirror for use as a rearview mirror in an automobile, the mirror having a plurality of thin layers arranged on a glass substratum plate. One of the layers is made so that it has an electric resistance, a pair of electrodes being connected thereto. An electric current is applied in order to generate heat to remove cloudiness or frost on the reflecting surface of the mirror. The mirror may also have a heat wave-reflecting layer for reflecting heat waves from the electric resistance layer.
Abstract: A heat-blocking glass comprising: a first layer of infrared rays-blocking film of any thickness formed on a substrate; a plurality of intermediate layers from a second to a (2n+2)th layer (n: positive integral) stacked on said first layer, the optical thickness of each intermediate layer being .lambda./4 (.lambda.: design wavelength); and an uppermost (+3)th layer of a .lambda./8 optical thickness. The refractive index of the first layer is smaller than the refractive index of the second layer. The refractive index of each layer from the second layer to the uppermost layer is arranged so that high-refractive-index layers and low-refractive-index layers are alternately stacked, the second layer being disposed as a high-refractive-index layer.
Abstract: A heat-reflection film comprising:a first layer formed on a base plate, the optical thickness of the first layer being approximately .lambda./8 or 3.lambda./8, in which .lambda. is the designed wavelength;a plurality of intermediate layers from a second layer to a (2n+2)th layer, in which n is a positive integral number, the optical thickness of each intermediate layer being .lambda./4; andan uppermost (2n+3)th layer, the optical thickness of which is approximately .lambda./8,wherein n.sub.g <n.sub.1 <n.sub.2, in which n.sub.g is the refractive index of the base plate, n.sub.1 is the refractive index of the first layer, and n.sub.2 is the refractive index of the second layer, the layers formed above the first layer being arranged in such a manner that high refractive index layers and low refractive index layers are alternately stacked, the second layer being arranged as a high refractive index layer.
Abstract: A heat rays reflecting film composed of dielectric thin layers (n.sub.H layers) having a relatively high refractive index and dielectric thin layers (n.sub.L layers) having a relatively low refractive index which are alternately piled on one another, is disclosed. The first layer of the heat rays reflecting film, which contacts with the air is n.sub.L layer and the undermost layer which contacts with the window glass is n.sub.H layer. The optical thickness of the first layer is less than .lambda./4 while that of the other layers is .lambda./4. And the thickness of each layer is expressed by the formula: optical thickness/nv wherein nv is the refractive index for visible rays.
Abstract: A knocking detector for internal combustion engines includes an illumination detector for detecting the illumination intensity of combustion of the air-fuel mixture in the combustion chamber and a knocking discriminator for deciding whether or not a knocking has occurred on the basis of a signal produced from the illumination detector. The illumination detector is provided on the cylinder head of the internal combustion engine and is sensitive only to the light longer in wavelength than the near infrared rays.
Abstract: A diagnostic apparatus for an internal combustion engine ignition system measures the rise of the secondary voltage at the ignition coil represented by time lapse between initiation of the secondary voltage rising and occurrence of break and the ignition coil primary breaking current value. Results of the measurement are computed to determine stray capacitance existing in the internal combustion engine ignition system and secondary voltage.
September 8, 1981
Date of Patent:
August 30, 1983
Nippon Soken, Inc., Toyota Jidosha Kogyo Kabushiki Kaisha
Abstract: An ignition system for internal combustion engine, which controls the ignition coil primary current according to the magnitude of the floating capacitance in the secondary side wiring section of the ignition coil, by determining the floating capacitance from the negative slope of rising of the secondary voltage produced in the ignition coil in response to the cutoff of the primary current and the primary cutoff current value, the slope being determined by measuring the period T until the secondary voltage reaches a predetermined voltage value. When the floating capacitance is increased, the primary cutoff current value is increased to increase the coil energy so as to increase the secondary voltage generated in the ignition coil for preventing the generation of a miss-spark.
July 2, 1980
Date of Patent:
March 22, 1983
Nippon Soken, Inc., Toyota Jidosha Kogyo Kabushiki Kaisha
Abstract: An air-fuel ratio detecting system is designed to compensate for the effects of temperature changes on the output resistance of an air-fuel ratio sensor adapted to detect the air-fuel ratio of mixture supplied to an engine from the composition of its exhaust gases so as to vary its electric resistance in accordance with the air-fuel ratio. The system further includes a current control circuit for controlling the current supplied to the air-fuel ratio sensor, an average voltage detecting circuit for detecting a rich air-fuel ratio peak voltage and a lean air-fuel ratio peak voltage and obtaining the intermediate voltage therebetween, a bias control circuit responsive to the value of the intermediate voltage so as to adjust the current control amount of the current control circuit, and a comparator responsive to the junction point voltage and the value of the intermediate voltage so as to generate an air-fuel ratio detection signal.