Patents by Inventor Yoshiko Harada

Yoshiko Harada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7807537
    Abstract: After forming a silicon nitride film 14 on a silicon oxide film 12 covering one main surface of a semiconductor substrate 10 by a CVD method, argon ions Ar+ are doped to a part (where oxidation speed should be reduced) of the silicon nitride film 14 by an ion doping process using a resist layer as a mask in a condition of acceleration voltage at 100 keV and a dose amount of 5×1015 inos/cm2. Thereafter, by performing a thermal oxidation process to the silicon nitride film 14, a thin silicon oxide film 18a is formed in a non-ion doped part and a thick silicon oxide film 18b is formed in an ion doped part. This method for forming silicon oxide films can be applied to a method for manufacturing capacitors of a MOS type IC, etc. Moreover, a silicon oxynitride film can be used instead of the silicon nitride film.
    Type: Grant
    Filed: March 14, 2007
    Date of Patent: October 5, 2010
    Assignee: Yamaha Corporation
    Inventors: Yoshiko Harada, Naotada Ogura
  • Publication number: 20070218637
    Abstract: After forming a silicon nitride film 14 on a silicon oxide film 12 covering one main surface of a semiconductor substrate 10 by a CVD method, argon ions Ar+ are doped to a part (where oxidation speed should be reduced) of the silicon nitride film 14 by an ion doping process using a resist layer as a mask in a condition of acceleration voltage at 100 keV and a dose amount of 5×1015 inos/cm2. Thereafter, by performing a thermal oxidation process to the silicon nitride film 14, a thin silicon oxide film 18a is formed in a non-ion doped part and a thick silicon oxide film 18b is formed in an ion doped part. This method for forming silicon oxide films can be applied to a method for manufacturing capacitors of a MOS type IC, etc. Moreover, a silicon oxynitride film can be used instead of the silicon nitride film.
    Type: Application
    Filed: March 14, 2007
    Publication date: September 20, 2007
    Applicant: YAMAHA CORPORATION
    Inventors: Yoshiko HARADA, Naotada OGURA
  • Publication number: 20070098429
    Abstract: The image forming device is capable of stapling up to a predetermined maximum number of sheets, and includes a control unit, an image forming unit, and a stapling unit. The control unit is capable of generating output data for image information for which the number of sheets exceeds the maximum number by carrying out image processing including N in 1 reduction processing (where N is a natural number equal to or greater than 1). The image forming unit outputs the output data obtained from the control unit onto sheets. The staple unit staples the sheets onto which the output data has been output.
    Type: Application
    Filed: October 27, 2005
    Publication date: May 3, 2007
    Inventors: Syuji Hayashi, Yoshiko Harada
  • Patent number: 6342636
    Abstract: Disclosed is a process for preparing an optically active 1-aryl- or 2-aryl-alkylamines of formulas Ia, Ib and Ic with high optical purity and high yield. The process uses an optically active 1- or 2-naphthylglycolic acid of the general formula II as a resolving agent.
    Type: Grant
    Filed: October 28, 1998
    Date of Patent: January 29, 2002
    Assignee: Yamakawa Chemical Industry Co., Ltd.
    Inventors: Kazuhiko Saigo, Yukihiko Hashimoto, Kazushi Kinbara, Yoshiko Harada, Kenichi Sakai
  • Patent number: 5561977
    Abstract: A method for efficient operation of a heavy oil-burning gas turbine which uses a fuel that has various high-melting point compounds added as corrosion inhibitors with a view to preventing the occurrence of corrosion at elevated temperatures. The amount of addition of the corrosion inhibitor in the initial period of turbine operation is such that the weight ratio of the effective metallic component (M) of the inhibitor to the corrosive component (V) of the fuel is set to lie within the range of M/V=2-5 and thereafter the addition of the inhibitor is reduced in either a stepwise or graded manner over a predetermined cycle of operation within one to six weeks until the amount of the inhibitor added at the end point is one to three tenths of the initial addition.
    Type: Grant
    Filed: September 29, 1995
    Date of Patent: October 8, 1996
    Assignee: Toa Nekken Co., Ltd.
    Inventors: Yoshio Harada, Yoshiko Harada, Takehico Morimoto