Abstract: An object is to provide a semiconductor device having a plate electrode adapted to a plurality of chips, capable of being produced at low cost, and having high heat cycle property. A semiconductor device according to the present invention includes a plurality of semiconductor chips formed on a substrate, and a plate electrode connecting electrodes of the plurality of semiconductor chips. The plate electrode has half-cut portions formed by half-pressing and the raised sides of the half-cut portions are bonded with the electrodes of the semiconductor chips.

Abstract: A power semiconductor module capable of reducing variation of inductance between upper/lower arms and reducing variation of current caused by the variation of inductance. The power semiconductor module includes circuit blocks (upper/lower arms) each of which is configured by connecting self-arc-extinguishing type semiconductor elements in series; a positive electrode terminal, a negative electrode terminal, and an AC terminal that are connected to each of the circuit blocks; and wiring patterns that connect the self-arc-extinguishing type semiconductor elements of the circuit blocks to the positive electrode terminal, the negative electrode terminal, and the AC terminal, wherein the circuit block is plural in number; the positive electrode terminal, the negative electrode terminal, and the AC terminal are each disposed to be plural in number corresponding to the circuit blocks; and the positive electrode terminals and the negative electrode terminals are closely disposed.

Abstract: A power semiconductor module capable of reducing variation of inductance between upper/lower arms and reducing variation of current caused by the variation of inductance. The power semiconductor module includes circuit blocks (upper/lower arms) each of which is configured by connecting self-arc-extinguishing type semiconductor elements in series; first and second positive electrode terminals, first and second negative electrode terminals, and first and second AC terminals. Further, there are first and second wiring patterns that connect the self-arc-extinguishing type semiconductor elements to the DC and AC terminals. The outline of the power semiconductor module has a substantially quadrangular surface.

Abstract: Phase coils are each configured by winding a conductor wire in a concentrated winding consecutively on three circumferentially consecutive tooth portions, six inverter units of an inverter module are each disposed in close proximity to a motor so as to face each of the phase coils axially, and the motor and the inverter module are electrically connected by connecting an alternating-current output terminals of each of the plurality of inverter units to output wires of the phase coils that face the inverter units axially.

Abstract: A power semiconductor module capable of reducing variation of inductance between upper/lower arms and reducing variation of current caused by the variation of inductance. The power semiconductor module includes circuit blocks (upper/lower arms) each of which is configured by connecting self-arc-extinguishing type semiconductor elements in series; first and second positive electrode terminals, first and second negative electrode terminals, and first and second AC terminals. Further, there are first and second wiring patterns that connect the self-arc-extinguishing type semiconductor elements to the DC and AC terminals. The outline of the power semiconductor module has a substantially quadrangular surface.

Abstract: A power semiconductor device includes power semiconductor elements joined to wiring patterns of a circuit substrate, cylindrical external terminal communication sections, and wiring means for forming electrical connection between, for example, the power semiconductor elements and the cylindrical external terminal communication sections. The power semiconductor elements, the cylindrical external terminal communication sections, and the wiring means are sealed with transfer molding resin. The cylindrical external terminal communication sections are arranged on the wiring patterns so as to be substantially perpendicular to the wiring patterns, such that external terminals are insertable and connectable to the cylindrical external terminal communication sections, and such that a plurality of cylindrical external terminal communication sections among the cylindrical external terminal communication sections are arranged two-dimensionally on each of wiring patterns that act as main circuits.

Abstract: A power semiconductor device with improved productivity, reduced size and reduction of amounting area therefore is provided. In the provided power semiconductor device, an external terminal does not limit an increase in current. The power semiconductor device is sealed with transfer molding resin. In the power semiconductor device, a cylindrical external terminal communication section is arranged on a wiring pattern so as to be substantially perpendicular to the wiring pattern. An external terminal can be inserted and connected to the cylindrical external terminal communication section. The cylindrical external terminal communication section allows the inserted external terminal to be electrically connected to the wiring pattern. A taper is formed at, at least, one end of the cylindrical external terminal communication section, which one end is joined to the wiring pattern.

Abstract: A power semiconductor module capable of reducing variation of inductance between upper/lower arms and reducing variation of current caused by the variation of inductance. The power semiconductor module includes circuit blocks (upper/lower arms) each of which is configured by connecting self-arc-extinguishing type semiconductor elements in series; a positive electrode terminal, a negative electrode terminal, and an AC terminal that are connected to each of the circuit blocks; and wiring patterns that connect the self-arc-extinguishing type semiconductor elements of the circuit blocks to the positive electrode terminal, the negative electrode terminal, and the AC terminal, wherein the circuit block is plural in number; the positive electrode terminal, the negative electrode terminal, and the AC terminal are each disposed to be plural in number corresponding to the circuit blocks; and the positive electrode terminals and the negative electrode terminals are closely disposed.

Abstract: A first inverter ventilation aperture is disposed so as to pass through a portion of a fin base that faces a bearing, a first rotor ventilation aperture is disposed so as to pass through a portion of a bottom surface portion that faces the bearing, and a first cooling airflow ventilation channel is formed in which a cooling airflow flows radially inward through radiating fins, then flows toward a first surface side of a mount portion through the first inverter ventilation aperture, flows axially through an interior portion of a stator core, and then flows out between the bottom surface portion and a base portion through the first rotor ventilation aperture, and subsequently flows radially outward between the bottom surface portion and the base portion due to rotational driving of a centrifugal fan.

Abstract: An object is to provide a semiconductor device having a plate electrode adapted to a plurality of chips, capable of being produced at low cost, and having high heat cycle property. A semiconductor device according to the present invention includes a plurality of semiconductor chips formed on a substrate, and a plate electrode connecting electrodes of the plurality of semiconductor chips. The plate electrode has half-cut portions formed by half-pressing and the raised sides of the half-cut portions are bonded with the electrodes of the semiconductor chips.

Abstract: An object is to provide a semiconductor device having a plate electrode adapted to a plurality of chips, capable of being produced at low cost, and having high heat cycle property. A semiconductor device according to the present invention includes a plurality of semiconductor chips formed on a substrate, and a plate electrode connecting electrodes of the plurality of semiconductor chips. The plate electrode has half-cut portions formed by half-pressing and the raised sides of the half-cut portions are bonded with the electrodes of the semiconductor chips.

Abstract: A power semiconductor device includes a power semiconductor module having cylindrical conductors which are joined to a wiring pattern so as to be substantially perpendicular to the wiring pattern and whose openings are exposed at a surface of transfer molding resin, and an insert case having a ceiling portion and peripheral walls, the ceiling portion being provided with external terminals that are fitted into, and passed through, the ceiling portion, the external terminals having outer-surface-side connecting portions at the outer surface side of the ceiling portion and inner-surface-side connecting portions at the inner surface side of the ceiling portion. The power semiconductor module is set within the insert case such that the inner-surface-side connecting portions of the external terminals are inserted into the cylindrical conductors.

Abstract: A wiring process between the provided power semiconductor module and the external circuit is simple. In the power semiconductor module, a power semiconductor element and a cylindrical conductor are joined to one surface of a lead frame. An opening of the cylindrical conductor is exposed at a surface of transfer molding resin. Sealing with the transfer molding resin is performed such that terminal portions of the lead frame protrude from peripheral side portions of the transfer molding resin. The cylindrical conductor is conductive with a control circuit. The terminal portions of the lead frame are each conductive with a main circuit.

Abstract: Phase coils are each configured by winding a conductor wire in a concentrated winding consecutively on three circumferentially consecutive tooth portions, six inverter units of an inverter module are each disposed in close proximity to a motor so as to face each of the phase coils axially, and the motor and the inverter module are electrically connected by connecting an alternating-current output terminals of each of the plurality of inverter units to output wires of the phase coils that face the inverter units axially.

Abstract: A first inverter ventilation aperture is disposed so as to pass through a portion of a fin base that faces a bearing, a first rotor ventilation aperture is disposed so as to pass through a portion of a bottom surface portion that faces the bearing, and a first cooling airflow ventilation channel is formed in which a cooling airflow flows radially inward through radiating fins, then flows toward a first surface side of a mount portion through the first inverter ventilation aperture, flows axially through an interior portion of a stator core, and then flows out between the bottom surface portion and a base portion through the first rotor ventilation aperture, and subsequently flows radially outward between the bottom surface portion and the base portion due to rotational driving of a centrifugal fan.

Abstract: In the power semiconductor module, a wiring metal plate electrically connects between power semiconductor elements joined to the circuit pattern, and between the power semiconductor elements and the circuit pattern. Cylindrical main terminals are joined, substantially perpendicularly, to the wiring metal plate and the circuit pattern, respectively. A cylindrical control terminal is joined, substantially perpendicularly, to one of the power semiconductor elements.

Abstract: A power semiconductor module includes: a circuit board having a metal base plate, a high thermal conductive insulating layer, and a wiring pattern; power semiconductor elements electrically connected to the wiring pattern; tubular external terminal connection bodies provided to the wiring pattern for external terminals; and a transfer mold resin body encapsulated to expose through-holes in the metal base plate and used to fixedly attach cooling fins to the face of the metal base plate on the other side with attachment members, the face of the metal base plate on the other side, and top portions of the tubular external terminal connection bodies, to form insertion holes for the attachment members communicating with the through-holes and having a larger diameter than the through-holes, and to cover the one side and side faces of the metal base plate and the power semiconductor elements.

Abstract: A power semiconductor device in which transfer molding resin seals: a metallic circuit substrate; a power semiconductor element joined to a wiring pattern; and a side surface of a cylindrical external terminal communication section provided on the wiring pattern and to which an external terminal can be inserted and connected. The cylindrical external terminal communication section is substantially perpendicular to a surface on which the wiring pattern is formed. An outer surface of a metal plate of the metallic circuit substrate and a top portion of the cylindrical external terminal communication section are exposed from the transfer molding resin. The transfer molding resin is not present within the cylindrical external terminal communication section.

Abstract: The power semiconductor module includes: a circuit substrate; power semiconductor elements joined to element mounting portions of the wiring pattern on the circuit substrate; the cylindrical external terminal communication section joined to the wiring pattern; circuit forming means for connecting between portions that require electrical connection therebetween; and transfer molding resin for sealing these components. The cylindrical external terminal communication section is a metal cylinder, and the cylindrical external terminal communication section has a hole filled with gel.

Abstract: A power semiconductor device includes power semiconductor elements joined to wiring patterns of a circuit substrate, cylindrical external terminal communication sections, and wiring means for forming electrical connection between, for example, the power semiconductor elements and the cylindrical external terminal communication sections. The power semiconductor elements, the cylindrical external terminal communication sections, and the wiring means are sealed with transfer molding resin. The cylindrical external terminal communication sections are arranged on the wiring patterns so as to be substantially perpendicular to the wiring patterns, such that external terminals are insertable and connectable to the cylindrical external terminal communication sections, and such that a plurality of cylindrical external terminal communication sections among the cylindrical external terminal communication sections are arranged two-dimensionally on each of wiring patterns that act as main circuits.