Patents by Inventor Yoshimichi Kumagai

Yoshimichi Kumagai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10879280
    Abstract: A solid-state imaging device includes: a semiconductor substrate having a light incident surface; a photoelectric converter for each of the pixels; a charge accumulation section for each of the pixels; a first transfer transistor; a wiring layer on side opposite to the light incident surface; a first vertical electrode and a second vertical electrode extending from the surface opposite to the light incident surface to the photoelectric converter; a first light-blocking film in a thickness direction of the semiconductor substrate on at least a portion of a periphery of the photoelectric converter; and a second light-blocking film in a surface direction of the semiconductor substrate between the photoelectric converter and the charge accumulation section. The first vertical electrode and the second vertical electrode are disposed adjacently with a distance therebetween, and the distance is a half or less of a length of one side of the pixel.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: December 29, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Ryoto Yoshita, Takashi Machida, Yoshimichi Kumagai
  • Patent number: 10798324
    Abstract: The present disclosure relates to a solid-state image capture element, a driving method, and an electronic device which are enabled to capture a high-quality image. In the solid-state image capture element, at least two or more of the discharge driving units are arranged in series between the photoelectric conversion unit and the discharge unit. During capturing of a still image, when a reset operation of the photoelectric conversion unit is performed in starting exposure of the pixel, driving is performed such that after potentials of all the discharge driving units arranged in series are reduced and the charge remaining in the photoelectric conversion unit is discharged to the discharge unit, the potential of the discharge driving unit on the photoelectric conversion unit side is returned to an original potential first, and then the potential of another discharge driving unit is returned to an original potential.
    Type: Grant
    Filed: June 6, 2019
    Date of Patent: October 6, 2020
    Assignee: Sony Corporation
    Inventor: Yoshimichi Kumagai
  • Publication number: 20200235146
    Abstract: A solid-state imaging device includes: a semiconductor substrate having a light incident surface; a photoelectric converter for each of the pixels; a charge accumulation section for each of the pixels; a first transfer transistor; a wiring layer on side opposite to the light incident surface; a first vertical electrode and a second vertical electrode extending from the surface opposite to the light incident surface to the photoelectric converter; a first light-blocking film in a thickness direction of the semiconductor substrate on at least a portion of a periphery of the photoelectric converter; and a second light-blocking film in a surface direction of the semiconductor substrate between the photoelectric converter and the charge accumulation section. The first vertical electrode and the second vertical electrode are disposed adjacently with a distance therebetween, and the distance is a half or less of a length of one side of the pixel.
    Type: Application
    Filed: February 14, 2018
    Publication date: July 23, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Ryoto YOSHITA, Takashi MACHIDA, Yoshimichi KUMAGAI
  • Publication number: 20200029037
    Abstract: A photoelectric converter generates a charge corresponding to the exposure amount during an exposure period. The generated-charge retention portion and the output charge retention portion retain the charge. The generated-charge transfer portion transfers the charge from the photoelectric converter to the generated-charge retention portion to perform the transfer after the elapse of the exposure period. The retained-charge transfer portion transfers the charge retained in the generated-charge retention portion to the output charge retention portion to perform the transfer.
    Type: Application
    Filed: September 30, 2019
    Publication date: January 23, 2020
    Inventors: YOSHIMICHI KUMAGAI, TAKASHI ABE, KAZUYOSHI YAMASHITA, RYOTO YOSHITA
  • Publication number: 20200013825
    Abstract: The present disclosure relates to an imaging device and an electronic device that make it possible to obtain a better pixel signal. A photoelectric conversion part that converts received light into a charge; a holding part that holds a charge transferred from the photoelectric conversion part; and a light shielding part that shields light between the photoelectric conversion part and the holding part are provided. The photoelectric conversion part, the holding part, and the light shielding part are formed in a semiconductor substrate. The light shielding part of a transfer region that transfers the charge from the photoelectric conversion part to the holding part is formed as a non-penetrating light shielding part that does not penetrate the semiconductor substrate. The light shielding part other than the transfer region is formed as a penetrating light shielding part that penetrates the semiconductor substrate. The present technology is applicable to an imaging device.
    Type: Application
    Filed: March 9, 2018
    Publication date: January 9, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yoshimichi KUMAGAI, Takashi ABE, Ryoto YOSHITA
  • Publication number: 20200013808
    Abstract: The present disclosure relates to an imaging device and an electronic device that make it possible to obtain a better pixel signal. A photoelectric conversion part that converts received light into a charge, and a holding part that holds a charge transferred from the photoelectric conversion part are provided, the photoelectric conversion part and the holding part are formed in a semiconductor substrate having a predetermined thickness, and the holding part is formed with a thickness that is half or less of the predetermined thickness. A charge capturing region that captures a charge is further provided on a light incident side of a region where the holding part is formed. A light shielding part that shields light is formed between the photoelectric conversion part and the charge capturing region. The present technology is applicable to an imaging device.
    Type: Application
    Filed: March 9, 2018
    Publication date: January 9, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yoshimichi KUMAGAI, Takashi ABE, Ryoto YOSHITA, Ikuhiro YAMAMURA
  • Patent number: 10469783
    Abstract: To transfer all charges retained in a charge retention region. The photoelectric converter generates a charge corresponding to the exposure amount during a predetermined exposure period. The generated-charge retention portion and the output charge retention portion retain the charge. The generated-charge transfer portion transfers the charge from the photoelectric converter to the generated-charge retention portion to perform the generated-charge transfer after the elapse of the exposure period. The retained-charge transfer portion transfers the charge retained in the generated-charge retention portion to the output charge retention portion to perform the retained-charge transfer.
    Type: Grant
    Filed: November 30, 2016
    Date of Patent: November 5, 2019
    Assignee: SONY CORPORATION
    Inventors: Yoshimichi Kumagai, Takashi Abe, Kazuyoshi Yamashita, Ryoto Yoshita
  • Publication number: 20190289234
    Abstract: The present disclosure relates to a solid-state image capture element, a driving method, and an electronic device which are enabled to capture a high-quality image. In the solid-state image capture element, at least two or more of the discharge driving units are arranged in series between the photoelectric conversion unit and the discharge unit. During capturing of a still image, when a reset operation of the photoelectric conversion unit is performed in starting exposure of the pixel, driving is performed such that after potentials of all the discharge driving units arranged in series are reduced and the charge remaining in the photoelectric conversion unit is discharged to the discharge unit, the potential of the discharge driving unit on the photoelectric conversion unit side is returned to an original potential first, and then the potential of another discharge driving unit is returned to an original potential.
    Type: Application
    Filed: June 6, 2019
    Publication date: September 19, 2019
    Applicant: SONY CORPORATION
    Inventor: Yoshimichi Kumagai
  • Patent number: 10356348
    Abstract: The present disclosure relates to a solid-state image capture element in which, at least two or more of the discharge driving units are arranged in series between the photoelectric conversion unit and the discharge unit. During capturing of a still image, when a reset operation of the photoelectric conversion unit is performed in starting exposure of the pixel, driving is performed such that after potentials of all the discharge driving units arranged in series are reduced and the charge remaining in the photoelectric conversion unit is discharged to the discharge unit, the potential of the discharge driving unit on the photoelectric conversion unit side is returned to an original potential first, and then the potential of another discharge driving unit is returned to an original potential. The present technology can be applied to a CMOS image sensor which performs imaging by, for example, a global shutter method.
    Type: Grant
    Filed: March 18, 2016
    Date of Patent: July 16, 2019
    Assignee: Sony Corporation
    Inventor: Yoshimichi Kumagai
  • Publication number: 20190014278
    Abstract: To transfer all charges retained in a charge retention region. The photoelectric converter generates a charge corresponding to the exposure amount during a predetermined exposure period. The generated-charge retention portion and the output charge retention portion retain the charge. The generated-charge transfer portion transfers the charge from the photoelectric converter to the generated-charge retention portion to perform the generated-charge transfer after the elapse of the exposure period. The retained-charge transfer portion transfers the charge retained in the generated-charge retention portion to the output charge retention portion to perform the retained-charge transfer.
    Type: Application
    Filed: November 30, 2016
    Publication date: January 10, 2019
    Inventors: YOSHIMICHI KUMAGAI, TAKASHI ABE, KAZUYOSHI YAMASHITA, RYOTO YOSHITA
  • Publication number: 20180054579
    Abstract: The present disclosure relates to a solid-state image capture element, a driving method, and an electronic device which are enabled to capture a high-quality image. In the solid-state image capture element, at least two or more of the discharge driving units are arranged in series between the photoelectric conversion unit and the discharge unit. During capturing of a still image, when a reset operation of the photoelectric conversion unit is performed in starting exposure of the pixel, driving is performed such that after potentials of all the discharge driving units arranged in series are reduced and the charge remaining in the photoelectric conversion unit is discharged to the discharge unit, the potential of the discharge driving unit on the photoelectric conversion unit side is returned to an original potential first, and then the potential of another discharge driving unit is returned to an original potential.
    Type: Application
    Filed: March 18, 2016
    Publication date: February 22, 2018
    Inventor: YOSHIMICHI KUMAGAI
  • Patent number: 9538104
    Abstract: There is provided an imaging apparatus that includes a photoelectric conversion section, a retention section, and first and second gates. The photoelectric conversion section is configured to convert a received light into charge. The retention section is configured to retain the charge provided by the photoelectric conversion section. The first and second gates are provided between the photoelectric conversion section and the retention section, the first and second gates being turned ON for transferring the charge from the photoelectric conversion section to the retention section, and the second gate being turned OFF after the first gate is turned OFF.
    Type: Grant
    Filed: September 11, 2014
    Date of Patent: January 3, 2017
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Yoshimichi Kumagai, Takashi Abe, Kazuyoshi Yamashita
  • Publication number: 20150077612
    Abstract: There is provided an imaging apparatus that includes a photoelectric conversion section, a retention section, and first and second gates. The photoelectric conversion section is configured to convert a received light into charge. The retention section is configured to retain the charge provided by the photoelectric conversion section. The first and second gates are provided between the photoelectric conversion section and the retention section, the first and second gates being turned ON for transferring the charge from the photoelectric conversion section to the retention section, and the second gate being turned OFF after the first gate is turned OFF.
    Type: Application
    Filed: September 11, 2014
    Publication date: March 19, 2015
    Inventors: Yoshimichi Kumagai, Takashi Abe, Kazuyoshi Yamashita
  • Patent number: 8670053
    Abstract: A solid-state imaging device, includes: plural unit pixels including a photoelectric conversion portion converting incident light into an electrical signal, and a waveguide having a quadratic curve surface at an inner surface and introducing the incident light to the photoelectric conversion portion.
    Type: Grant
    Filed: August 23, 2013
    Date of Patent: March 11, 2014
    Assignee: Sony Corporation
    Inventors: Yoshimichi Kumagai, Hiroaki Ishiwata
  • Publication number: 20130341748
    Abstract: A solid-state imaging device, includes: plural unit pixels including a photoelectric conversion portion converting incident light into an electrical signal, and a waveguide having a quadratic curve surface at an inner surface and introducing the incident light to the photoelectric conversion portion.
    Type: Application
    Filed: August 23, 2013
    Publication date: December 26, 2013
    Applicant: SONY CORPORATION
    Inventors: Yoshimichi Kumagai, Hiroaki Ishiwata
  • Patent number: 8547459
    Abstract: A solid-state imaging device, includes: plural unit pixels including a photoelectric conversion portion converting incident light into an electrical signal, and a waveguide having a quadratic curve surface at an inner surface and introducing the incident light to the photoelectric conversion portion.
    Type: Grant
    Filed: February 24, 2010
    Date of Patent: October 1, 2013
    Assignee: Sony Corporation
    Inventors: Yoshimichi Kumagai, Hiroaki Ishiwata
  • Publication number: 20100225792
    Abstract: A solid-state imaging device, includes: plural unit pixels including a photoelectric conversion portion converting incident light into an electrical signal, and a waveguide having a quadratic curve surface at an inner surface and introducing the incident light to the photoelectric conversion portion.
    Type: Application
    Filed: February 24, 2010
    Publication date: September 9, 2010
    Applicant: Sony Corporation
    Inventors: Yoshimichi Kumagai, Hiroaki Ishiwata