Patents by Inventor Yoshinobu Aoyagi
Yoshinobu Aoyagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210193470Abstract: A semiconductor manufacturing method includes a metal thin film deposition step of depositing a metal thin film on a donor or acceptor-doped nitride semiconductor, and a laser beam irradiation step of irradiating the deposited metal thin film with a laser beam.Type: ApplicationFiled: March 4, 2021Publication date: June 24, 2021Inventors: Teruhisa Kawasaki, Yoshinobu Aoyagi, Noriko Kurose
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Patent number: 10689408Abstract: It is intended to provide a novel bisphosphonic acid compound or a salt thereof which shows a remarkable inhibitory effect on ectopic calcification, and a pharmaceutical composition comprising the same. The present invention provides a bisphosphonic acid compound represented by the following formula (1) or a pharmaceutically acceptable salt thereof: wherein represents a single bond or a double bond; A represents a saturated cyclic hydrocarbon or a saturated heterocyclic ring comprising a sulfur atom or an oxygen atom; and R1 and R2 each independently represent an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an aryloxy group, a haloalkoxy group, a haloalkyl group, a halogen atom or a hydrogen atom.Type: GrantFiled: January 27, 2017Date of Patent: June 23, 2020Assignee: FUJIYAKUHIN CO., LTD.Inventors: Seiichi Kobashi, Yoshinobu Aoyagi, Hiroshige Kato, Ryuko Tokuyama, Naoki Ashizawa, Koichi Ishida, Koji Matsumoto
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Publication number: 20190002482Abstract: It is intended to provide a novel bisphosphonic acid compound or a salt thereof which shows a remarkable inhibitory effect on ectopic calcification, and a pharmaceutical composition comprising the same. The present invention provides a bisphosphonic acid compound represented by the following formula (1) or a pharmaceutically acceptable salt thereof: wherein represents a single bond or a double bond; A represents a saturated cyclic hydrocarbon or a saturated heterocyclic ring comprising a sulfur atom or an oxygen atom; and R1 and R2 each independently represent an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an aryloxy group, a haloalkoxy group, a haloalkyl group, a halogen atom or a hydrogen atom.Type: ApplicationFiled: January 27, 2017Publication date: January 3, 2019Applicant: FUJIYAKUHIN CO., LTD.Inventors: Seiichi KOBASHI, Yoshinobu AOYAGI, Hiroshige KATO, Ryuko TOKUYAMA, Naoki ASHIZAWA, Koichi ISHIDA, Koji MATSUMOTO
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Patent number: 9278870Abstract: An ultraviolet irradiation apparatus includes a fluid holder including a bottom portion having an upper surface and a lower surface, the bottom portion holding a fluid on the upper surface with a substantially uniform thickness; and a light-emitting device that substantially uniformly irradiates the fluid held on the upper surface with ultraviolet light.Type: GrantFiled: January 12, 2015Date of Patent: March 8, 2016Assignee: Panasonic CorporationInventors: Hiroto Yanagawa, Yoshinobu Aoyagi, Noriko Kurose
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Publication number: 20150203369Abstract: An ultraviolet irradiation apparatus includes a fluid holder including a bottom portion having an upper surface and a lower surface, the bottom portion holding a fluid on the upper surface with a substantially uniform thickness; and a light-emitting device that substantially uniformly irradiates the fluid held on the upper surface with ultraviolet light.Type: ApplicationFiled: January 12, 2015Publication date: July 23, 2015Inventors: HIROTO YANAGAWA, YOSHINOBU AOYAGI, NORIKO KUROSE
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Patent number: 8698168Abstract: A method of crystal growth is provided which can suppress development of dislocations and cracks and a warp in a substrate. The method of crystal growth of a group III nitride semiconductor has: a step of heating a silicon substrate; and a step of forming a depressed structure on the substrate surface by advance-feeding onto the heated silicon substrate a gas containing at least TMA (trimethylaluminum).Type: GrantFiled: March 3, 2011Date of Patent: April 15, 2014Assignees: Sharp Kabushiki Kaisha, The Ritsumeikan TrustInventors: Yoshihiro Ueta, Masataka Ohta, Yoshinobu Aoyagi, Misaichi Takeuchi
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Publication number: 20120007039Abstract: A method of crystal growth is provided which can suppress development of dislocations and cracks and a warp in a substrate. The method of crystal growth of a group III nitride semiconductor has: a step of heating a silicon substrate; and a step of forming a depressed structure on the substrate surface by advance-feeding onto the heated silicon substrate a gas containing at least TMA (trimethylaluminum).Type: ApplicationFiled: March 3, 2011Publication date: January 12, 2012Applicants: THE RITSUMEIKAN TRUST, SHARP KABUSHIKI KAISHAInventors: Yoshihiro Ueta, Masataka Ohta, Yoshinobu Aoyagi, Misaichi Takeuchi
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Patent number: 8043978Abstract: Provided is a novel electronic device that comprises graphite, graphene or the like. An electronic device having a substrate, a layer comprising a 6-member ring-structured carbon homologue as the main ingredient, a pair of electrodes, a layer comprising aluminium oxide as the main ingredient and disposed between the pair of electrodes, and a layer comprising aluminium as the main ingredient, wherein the layer comprising aluminium oxide as the main ingredient is disposed between the layer comprising a 6-member ring-structured carbon homologue as the main ingredient and the layer comprising aluminium as the main ingredient so as to be in contact with the two layers.Type: GrantFiled: August 19, 2008Date of Patent: October 25, 2011Assignee: RikenInventors: Hisao Miyazaki, Kazuhito Tsukagoshi, Syunsuke Odaka, Yoshinobu Aoyagi
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Patent number: 7691202Abstract: An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is used. The p-type semiconductor is prepared by supplying a p-type impurity raw material at the same time or after starting supply of predetermined types of crystal raw materials, besides before starting supply of other types of crystal raw materials than the predetermined types of crystal raw materials in one cycle wherein all the types of crystal raw materials of the plural types of crystal raw materials are supplied in one time each in case of making crystal growth by supplying alternately the plural types of crystal raw materials in a pulsed manner.Type: GrantFiled: October 10, 2007Date of Patent: April 6, 2010Assignee: RikenInventors: Hideki Hirayama, Sohachi Iwai, Yoshinobu Aoyagi
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Publication number: 20100078639Abstract: The present invention provides a method for making a thin film semiconductor device having a bottom-gate, bottom-contact-type thin film transistor structure finer in size with satisfactory characteristics, in which the interface between a gate insulating film and a thin film semiconductor layer can be maintained at satisfactory conditions without being affected by formation of source/drain electrodes. A first gate insulating film (7-1) covering a gate electrode (5) on a substrate (3) is formed, and a pair of source/drain electrodes (9) is formed on the first gate insulating film (7-1). Subsequently, a second gate insulating film (7-2) is selectively formed only on the first gate insulating film (7-2) exposed from the source/drain electrodes (9). Next, a thin film semiconductor layer (11) continuously covering from the source/drain electrodes (9) to the first gate insulating film (7-1) through the second gate insulating film (7-2) is formed while making contact with the source/drain electrodes (9).Type: ApplicationFiled: January 28, 2008Publication date: April 1, 2010Applicants: SONY CORPORATION, RIKENInventors: Kazumasa Nomoto, Nobukazu Hirai, Ryoichi Yasuda, Takeo Minari, Kazuhito Tsukagoshi, Yoshinobu Aoyagi
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Patent number: 7675069Abstract: For the purpose of emitting light in an ultraviolet short-wavelength region having a wavelength of 360 nm or shorter, it is arranged in InAlGaN in such that a ratio of composition of In is 2% to 20%, a ratio of composition of Al is 10% to 90%, and a total of ratios of composition in In, Al, and Ga is 100%.Type: GrantFiled: February 23, 2001Date of Patent: March 9, 2010Assignee: RikenInventors: Hideki Hirayama, Yoshinobu Aoyagi
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Publication number: 20090139752Abstract: Provided is a novel electronic device that comprises graphite, graphene or the like. An electronic device having a substrate, a layer comprising a 6-member ring-structured carbon homologue as the main ingredient, a pair of electrodes, a layer comprising aluminium oxide as the main ingredient and disposed between the pair of electrodes, and a layer comprising aluminium as the main ingredient, wherein the layer comprising aluminium oxide as the main ingredient is disposed between the layer comprising a 6-member ring-structured carbon homologue as the main ingredient and the layer comprising aluminium as the main ingredient so as to be in contact with the two layers.Type: ApplicationFiled: August 19, 2008Publication date: June 4, 2009Applicant: RIKENInventors: Hisao Miyazaki, Kazuhito Tsukagoshi, Syunsuke Odaka, Yoshinobu Aoyagi
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Publication number: 20090039563Abstract: A method of fine-pattern formation in which in forming a pattern, a fine pattern formed in a mold can be transferred to a pattering material in a short time at a low temperature and low pressure and, after the transfer of the fine pattern to the patterning material, the fine pattern formed in the patterning material does not readily deform. The method for fine-pattern formation comprises: a first step in which a mold having a fine structure with recesses/protrusions is pressed against a pattering material comprising a polysilane; a second step in which the patterning material is irradiated with ultraviolet to photooxidize the patterning material; a third in which the pressing of the mold against the patterning material is relieved and the mold is drawn from the pattering material; and a fourth step in which that surface of the patterning material to which the fine pattern has been transferred is irradiated with an oxygen plasma to oxidize the surface.Type: ApplicationFiled: August 25, 2006Publication date: February 12, 2009Applicant: RIKENInventors: Motoki Okinaka, Kazuhito Tsukagoshi, Yoshinobu Aoyagi
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Publication number: 20080315190Abstract: This invention provides an organic thin film transistor, which can realize the modification of the surface of a gate insulating layer not only the case where the gate insulating layer is formed of an oxide, but also the case where the gate insulating layer is formed of a material other than the oxide and consequently can significantly improve transistor characteristics, and a method for surface modification of a gate insulating layer in the organic thin film transistor. In an organic thin film transistor comprising a gate insulating layer, an organic semiconductor layer stacked on the gate insulating layer, and an electrode provided on the organic semiconductor layer, a polyparaxylylene layer formed of a continuous polyparaxylylene film is formed on the surface of the gate insulating layer, between the gate insulating layer and the organic semiconductor layer, so as to face and contact with the organic semiconductor layer.Type: ApplicationFiled: August 25, 2006Publication date: December 25, 2008Applicant: RIKENInventors: Kazuhito Tsukagoshi, Kunji Shigeto, Iwao Yagi, Yoshinobu Aoyagi
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Publication number: 20080203620Abstract: There is provided a method for forming minute patterns ranging from nanometer scale to micrometer scale with high aspect ratio at one time under a single condition of low temperature, low pressure, and a short period of time. A method of forming a minute pattern according to the present invention includes: applying, onto a substrate, a patterning material containing a polysilane and a silicone compound; pressing a mold on which a predetermined minute pattern has been formed to the patterning material which has been applied onto the substrate; irradiating energy rays from a side of the substrate while the mold is contacted by press with the patterning material; releasing the mold; and irradiating the patterning material with energy rays from a side to which the mold has been pressed.Type: ApplicationFiled: August 27, 2007Publication date: August 28, 2008Applicants: RIKEN, NIPPON PAINT CO., LTDInventors: Motoki Okinaka, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Hiroshi Tsushima
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Publication number: 20080203271Abstract: There are provided a replica mold which is excellent in transferring a pattern of a master mold, and also has notably excellent hardness, transparency, heat resistance and chemical resistance, and a simple and inexpensive method of manufacturing the replica mold. A method of manufacturing a replica mold according to the present invention includes the steps of: applying, to a substrate, a replica mold material containing a polysilane and a silicone compound; pressing a master mold on which a predetermined minute pattern has been formed to the replica mold material which has been applied to the substrate; irradiating energy rays from a side of the substrate while the master mold is contacted by press with the replica mold material; releasing the master mold; and irradiating the replica mold material with energy rays from a side to which the master mold has been pressed.Type: ApplicationFiled: August 27, 2007Publication date: August 28, 2008Applicants: RIKEN, NIPPON PAINT CO., LTDInventors: Motoki Okinaka, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Hiroshi Tsushima
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Publication number: 20080202163Abstract: There is provided a material on which a minute pattern in nanometer order can be formed and capable of providing a glass having transparency and high refractive index. A material for a high refractive index glass according to an embodiment of the present invention includes a polysilane, a silicone compound, and metal oxide nanoparticles. Preferably, the polysilane includes a branched polysilane. Preferably, the polysilane and the silicone compound are contained at a weight ratio of 80:20 to 5:95. Preferably, the metal oxide nanoparticles are formed of at least one metal oxide selected from the group consisting of zircon oxide, titanium oxide, and zinc oxide.Type: ApplicationFiled: August 27, 2007Publication date: August 28, 2008Applicants: RIKEN, NIPPON PAINT CO., LTDInventors: Motoki Okinaka, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Yoshifumi Ichinose, Toshiyuki Tachibana, Hiroshi Tsushima
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Publication number: 20080042162Abstract: An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is used. The p-type semiconductor is prepared by supplying a p-type impurity raw material at the same time or after starting supply of predetermined types of crystal raw materials, besides before starting supply of other types of crystal raw materials than the predetermined types of crystal raw materials in one cycle wherein all the types of crystal raw materials of the plural types of crystal raw materials are supplied in one time each in case of making crystal growth by supplying alternately the plural types of crystal raw materials in a pulsed manner.Type: ApplicationFiled: October 10, 2007Publication date: February 21, 2008Inventors: Hideki Hirayama, Sohachi Iwai, Yoshinobu Aoyagi
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Patent number: 7309394Abstract: An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is used. The p-type semiconductor is prepared by supplying a p-type impurity raw material at the same time or after starting supply of predetermined types of crystal raw materials, besides before starting supply of other types of crystal raw materials than the predetermined types of crystal raw materials in one cycle wherein all the types of crystal raw materials of the plural types of crystal raw materials are supplied in one time each in case of making crystal growth by supplying alternately the plural types of crystal raw materials in a pulsed manner.Type: GrantFiled: July 25, 2003Date of Patent: December 18, 2007Assignee: RikenInventors: Hideki Hirayama, Sohachi Iwai, Yoshinobu Aoyagi
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Patent number: 7301159Abstract: A focused ion beam apparatus having two pieces of probers brought into contact with two points of a surface of a sample, a voltage source for applying a constant voltage between the two points with which the probers are brought into contact, and an ammeter for measuring a current flowing between the two points, in which a conductive film is formed to narrow a gap thereof between the two points by operating a deflection electrode and a gas gun and the current flowing between the two points is monitored, and when the current becomes a predetermined value, a focused charged particle beam irradiated to the surface of the sample is made OFF by the blanking electrode.Type: GrantFiled: August 3, 2005Date of Patent: November 27, 2007Assignee: Riken & SII NanoTechnology Inc.Inventors: Toshiaki Fujii, Masao Abe, Kunji Shigeto, Minuru Kawamura, Alekber Yu Kasumov, Kazuhito Tsukagoshi, Yoshinobu Aoyagi