Patents by Inventor Yoshinobu Kakihara

Yoshinobu Kakihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5529831
    Abstract: A thin film device comprising a substrate which is magnetic and has insulation property at least on the surface, coils formed spirally in a planar configuration on the substrate, a first interlayer insulation film formed to a portion excepting for the terminal portion of the coils and a magnetic material connection portion of the substrate, a magnetic film and a second interlayer insulation film formed successively on the first interlayer insulation film excepting for the terminal portions, and bump electrodes formed in connection with the terminal portions in which a crystallite material having a composition: Fe.sub.78 Ta.sub.10 C.sub.12 is used as the magnetic film. The thin film device can be formed an a reduced size and having a large inductance value. When the device is used as a noise filter, a cut-off frequency range can be lowered.
    Type: Grant
    Filed: December 2, 1994
    Date of Patent: June 25, 1996
    Assignee: Alps Electric Co., Ltd.
    Inventors: Satoshi Waga, Mitsuo Bitoh, Kazunari Takida, Kenji Shimizu, Kiyoshi Sasai, Yoshihiro Sudoh, Yoshinobu Kakihara
  • Patent number: 4834809
    Abstract: A semiconductor substrate includes: a first monocrystalline semiconductive layer formed on the surface of a crystalline silicon substrate with the intervension of a first insulation film; a second insulation film set to the upper surface of the first monocrystalline semiconductive layer and provided with a plurality of apertures each having a specific pattern; and a second monocrystalline semiconductive layer which is epitaxially grown by the seed crystallization process and provided with the same crystalline characteristics as that of the first monocrystalline semiconductive layer.Accordingly, the preferred embodiment of the present invention provides an extremely useful semiconductor substrate which easily isolates the elements of semiconductor devices between layers of insulating film described above.
    Type: Grant
    Filed: September 9, 1987
    Date of Patent: May 30, 1989
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Yoshinobu Kakihara
  • Patent number: 4394601
    Abstract: A ZnS thin-film electroluminescent element which exhibits the hysteresis phenomenon within the light emission versus applied voltage characteristics, the electric current versus applied alternating voltage characteristics, or the electric current phase versus applied alternating voltage characteristics. The ZnS element comprises a ZnS EL thin-film including Mn serving as a luminescent center with a concentration of 0.05-5.0 wt. %, and a pair of dielectric layers made of rare earth oxides or oxides groups of III, IV and V of the Periodic Table. The EL thin-film is sandwiched between the pair of the dielectric layers. The ZnS EL thin-film is made by applying the electron-beam heating evaporation technology to a ZnS pellet.
    Type: Grant
    Filed: May 18, 1977
    Date of Patent: July 19, 1983
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Mikio Takeda, Yoshinobu Kakihara, Masaru Yoshida, Yukihiko Nakata