Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for bad row mode. The memory may prevent proper access operations (e.g., read operations) from being performed on a selected bad row of the memory as part of a bad row mode. For example, the memory may store a bad row address and when an access address matches the bad row address, may suppress one or more signals, change data read from the address, or combinations thereof. The bad row mode may be used to provide a positive control for post package repair (PPR) operations on the memory. A controller may enter the memory into bad row mode and then test the memory to determine if the selected bad row can be located and repaired via PPR.

Abstract: An apparatus with a memory array having a plurality of memory cells. The apparatus also including a memory built-in self-test circuit to test the memory array. The memory built-in self-test circuit includes one or more processing devices to write a data pattern to one or more memory cells to be tested in the memory array, pause for a time period corresponding to a predetermined pause time setting, and read the written data pattern from the one or more memory cells after the time period has elapsed. The predetermined pause time setting is automatically adjusted based on memory device conditions, which can include the temperature of the apparatus.

Abstract: Apparatuses, systems, and methods for refresh address masking. A memory device may refresh word lines as part of refresh operation by cycling through the word lines in a sequence. However, it may be desirable to avoid activating certain word lines (e.g., because they are defective). Refresh masking logic for each bank may include a fuse latch which stores a selected address associated with a word line to avoid. When a refresh address is generated it may be compared to the selected address. If there is a match, a refresh stop signal may be activated, which may prevent refreshing of the word line(s).

Abstract: A memory device includes a memory bank that includes a first set of memory rows in a first section of the memory bank, a first set of redundant rows in a first section of the memory bank, a second set of memory rows in a second section of the memory bank, and a second set of redundant rows in the second section of the memory bank. The memory bank also includes a repeater blocker circuit that when in operation selectively blocks a signal from transmission to the second section of the memory bank and blocker control circuitry that when in operation transmits a control signal to control the selective blocking of the signal by the repeater blocker circuit.

Abstract: This document describes aspects of communicating information about repair elements of a memory device. A memory device can include multiple repair elements that can each replace a defective or damaged memory element, such as a memory row, using a repair operation. By knowing a quantity of remaining available repair elements, a user of a memory device can make informed decisions about whether to make a replacement. In operation, a host device can send a command to the memory device requesting repair element information. Logic of the memory device can determine a quantity of repair elements that are available for a repair operation. In some cases, the logic may store this quantity in a register of the memory device. The memory device can signal the quantity of repair elements to the host device in response to the command.

Abstract: A memory device includes a memory bank that includes a first set of memory rows in a first section of the memory bank, a first set of redundant rows in a first section of the memory bank, a second set of memory rows in a second section of the memory bank, and a second set of redundant rows in the second section of the memory bank. The memory bank also includes a repeater blocker circuit that when in operation selectively blocks a signal from transmission to the second section of the memory bank and blocker control circuitry that when in operation transmits a control signal to control the selective blocking of the signal by the repeater blocker circuit.

Abstract: Microelectronic device testing, and related methods, devices, and systems, are described herein. A device may include a memory array including a number of rows and a number of columns. The memory device may further include circuitry coupled to the memory array. The circuitry may be configured to perform a testing operation on each row of the number of rows to detect: a first fail of a first row of the number of rows; and a set of additional fails associated with a set of rows of the number of rows. The circuitry may also be configured to determine whether the set of rows is adjacent the first row. Further, in response to determining that the set of rows is adjacent the first row, the circuitry may be configured to generate a signal indicative of a failure of a column of the number of columns.

Abstract: Command/address (CA) pads of a wafer may be coupled with one or more logic circuits of the wafer to support transmission of a test signal between different memory dies of the wafer. A CA pad of a first memory die may be coupled with a repeater circuit in a scribe region of the wafer, and the repeater circuit may be coupled with a corresponding control circuit in the scribe region. These circuits may support repetition of a signal from a probe card to one or more other CA conductive paths of one or more other memory dies of the wafer. The repeater circuit may receive a test signal from the CA pad, which may be coupled with and receive the test signal from the probe card, and may transmit the test signal to another CA pad of another memory die based on a configuration of the control circuit.

Abstract: Apparatuses, systems, and methods for error correction. A memory device may have a number of memory cells each of which stores a bit of information. One or more error correction code (ECC) may be used to determine if the bits of information contain any errors. To mitigate the effects of failures of adjacent memory cells, the information may be divided into a first group and a second group, where each group contains information from memory cells which are non-adjacent to other memory cells of that group. Each group of information may include data bits and parity bits used to correct those data bits. For example, as part of a read operation, a first ECC circuit may receive information from even numbered memory cells, while a second ECC circuit may receive information from odd numbered memory cells.

Abstract: A memory device includes a memory bank that includes a first set of memory rows in a first section of the memory bank, a first set of redundant rows in a first section of the memory bank, a second set of memory rows in a second section of the memory bank, and a second set of redundant rows in the second section of the memory bank. The memory bank also includes a repeater blocker circuit that when in operation selectively blocks a signal from transmission to the second section of the memory bank and blocker control circuitry that when in operation transmits a control signal to control the selective blocking of the signal by the repeater blocker circuit.

Abstract: Apparatuses, systems, and methods for error correction. A memory device may have a number of memory cells each of which stores a bit of information. One or more error correction code (ECC) may be used to determine if the bits of information contain any errors. To mitigate the effects of failures of adjacent memory cells, the information may be divided into a first group and a second group, where each group contains information from memory cells which are non-adjacent to other memory cells of that group. Each group of information may include data bits and parity bits used to correct those data bits. For example, as part of a read operation, a first ECC circuit may receive information from even numbered memory cells, while a second ECC circuit may receive information from odd numbered memory cells.

Abstract: Memory devices are disclosed. A memory device may include a number of fuses and a number of transmit lines configured to transmit data from the number of fuses. The memory device may also include a number of monitoring circuits. Each monitoring circuit of the number of monitoring circuits is coupled to a transmit line of the number of transmit lines. Each monitoring circuit comprises logic configured to receive the data from the number fuses via the transmit line. The logic is further configured to generate a result responsive to the data and indicative of pass/fail status of the transmit line. Associated methods and systems are also disclosed.

Abstract: Methods, systems, and devices related to identifying high impedance faults in a memory device are described. A memory device may perform a first write operation to write a first logic state to a memory cell. During the first write operation, the memory device may establish a connection between a supply line and a control line associated with applying an output of a driver of a digit line coupled to the memory cell. After performing the first operation, the memory device may configure the supply line in a floating state. After the supply line is floated, the memory device may perform a second write operation to write a second logic state to the memory cell. The memory device may perform a third operation for reading the memory cell. The memory device may determine the condition of the supply line or control based on the result of the read operation.

Abstract: Methods, systems, and devices related to identifying high impedance faults in a memory device are described. A memory device may perform a first write operation to write a first logic state to a memory cell. During the first write operation, the memory device may establish a connection between a supply line and a control line associated with applying an output of a driver of a digit line coupled to the memory cell. After performing the first operation, the memory device may configure the supply line in a floating state. After the supply line is floated, the memory device may perform a second write operation to write a second logic state to the memory cell. The memory device may perform a third operation for reading the memory cell. The memory device may determine the condition of the supply line or control based on the result of the read operation.

Abstract: Apparatuses, systems, and methods for self-test mode abort circuit. Memory devices may enter a self-test mode and perform testing operations on the memory array. During the self-test mode, the memory device may ignore external communications. The memory includes an abort circuit which may terminate the self-test mode if it fails to properly finish. For example, the abort circuit may count an amount of time since the self-test mode began and end the self-test mode if that amount of time meets or exceeds a threshold, which may be based off of the expected amount of time for the testing operations to complete.

Abstract: Command/address (CA) pads of a wafer may be coupled with one or more logic circuits of the wafer to support transmission of a test signal between different memory dies of the wafer. A CA pad of a first memory die may be coupled with a repeater circuit in a scribe region of the wafer, and the repeater circuit may be coupled with a corresponding control circuit in the scribe region. These circuits may support repetition of a signal from a probe card to one or more other CA conductive paths of one or more other memory dies of the wafer. The repeater circuit may receive a test signal from the CA pad, which may be coupled with and receive the test signal from the probe card, and may transmit the test signal to another CA pad of another memory die based on a configuration of the control circuit.

Abstract: Methods, systems, and devices for memory device random option inversion are described. A memory device may use a second set of fuses to selectively invert options associated with a first set of fuses (e.g., blown fuses). The first set of fuses may output a first set of logic states. Option inversion logic circuitry may perform decoding based on a second set of logic states output by the second set of fuses to identify logic states of the second set of logic states that match the first set of logic states. Based on identifying the logic states, the option inversion logic circuitry may select either a logic state of the first set of logic states or an inverted logic state corresponding to the logic state, and store the selected logic state in a latch of the memory device.

Abstract: Apparatuses, systems, and methods for error correction. A memory device may have a number of memory cells each of which stores a bit of information. One or more error correction code (ECC) may be used to determine if the bits of information contain any errors. To mitigate the effects of failures of adjacent memory cells, the information may be divided into a first group and a second group, where each group contains information from memory cells which are non-adjacent to other memory cells of that group. Each group of information may include data bits and parity hits used to correct those data bits. For example, as part of a read operation, a first ECC circuit may receive information from even numbered memory cells, while a second ECC circuit may receive information from odd numbered memory cells.

Abstract: An example apparatus includes an input buffer coupled to an input terminal, wherein the input buffer is configured to provide an input signal based on a voltage received at the input terminal, a test terminal configured to receive a probe signal, and a power supply terminal configured to receive an external supply voltage. The example apparatus further includes a test logic circuit configured to, in response to the probe signal indicating a test and an external supply voltage detection signal having a value indicating detection of the external supply voltage, initiate a probe contact detection test. During the initiate a probe contact detection test, the test logic circuit is configured to receive the input signal and to provide an output signal having a value based on the input signal.

Abstract: An example apparatus includes an input buffer coupled to an input terminal, wherein the input buffer is configured to provide an input signal based on a voltage received at the input terminal, a test terminal configured to receive a probe signal, and a power supply terminal configured to receive an external supply voltage. The example apparatus further includes a test logic circuit configured to, in response to the probe signal indicating a test and an external supply voltage detection signal having a value indicating detection of the external supply voltage, initiate a probe contact detection test. During the initiate a probe contact detection test, the test logic circuit is configured to receive the input signal and to provide an output signal having a value based on the input signal.