Patents by Inventor Yoshinori Iida

Yoshinori Iida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9721994
    Abstract: According to an embodiment, a semiconductor device includes a silicon substrate, a photoelectric conversion layer, a termination layer, and an electrode layer. In the silicon substrate, first semiconductor regions and second semiconductor regions are alternately arranged along a first surface on a light incident side of the silicon substrate. The first semiconductor regions are doped with impurities of first concentration and have a conductivity of either one of p-type and n-type. The second semiconductor regions are doped with impurities of a second concentration lower than the first concentration and have a conductivity of the other type. The photoelectric conversion layer is disposed on a first surface side of the silicon substrate. The termination layer is disposed between the silicon substrate and the photoelectric conversion layer, in contact with the first surface, and to terminate dangling bonds of the silicon substrate. The electrode layer is provided on the light incident side.
    Type: Grant
    Filed: November 17, 2015
    Date of Patent: August 1, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takashi Miyazaki, Hideyuki Funaki, Yoshinori Iida, Isao Takasu, Yuki Nobusa
  • Publication number: 20160247860
    Abstract: According to one embodiment, a solid-state image sensing device includes an organic photoelectric conversion layer. The organic photoelectric conversion layer includes an organic semiconductor material and an organic dye. The organic semiconductor material selectively absorbs light having one of three primary colors selected from blue light, green light, and red light. The organic semiconductor material allows the other two of primary colors of light to be transmitted therethrough. The organic dye is dispersed in the organic semiconductor material. The organic dye receives energy less than excitation energy of the organic semiconductor material.
    Type: Application
    Filed: February 19, 2016
    Publication date: August 25, 2016
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Machiko ITO, Isao Takasu, Atsushi Wada, Yoshinori Iida
  • Publication number: 20150210595
    Abstract: A filler for construction includes a hardening material, a fine powder as an admixture material, and sludge water obtained by separating sand and gravel from discharged water provided by washing concrete handling equipment.
    Type: Application
    Filed: August 5, 2013
    Publication date: July 30, 2015
    Inventors: Yoshinori Iida, Keisuke Kaneko
  • Patent number: 8941158
    Abstract: Certain embodiments provide a solid-state imaging device including: a semiconductor substrate of a first conductivity type having a first face and a second face that is the opposite side from the first face; a plurality of pixels provided on the first face of the semiconductor substrate, each of the pixels including a semiconductor region of a second conductivity type that converts incident light into signal charges, and stores the signal charges; a readout circuit provided on the second face of the semiconductor substrate to read the signal charges stored in the pixels; an ultrafine metal structure placed at intervals on a face on a side of the semiconductor region, the light being incident on the face; and an insulating layer provided between the ultrafine metal structure and the semiconductor region.
    Type: Grant
    Filed: September 3, 2010
    Date of Patent: January 27, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yoshinori Iida, Eishi Tsutsumi, Akira Fujimoto, Koji Asakawa, Hisayo Momose, Koichi Kokubun, Nobuyuki Momo
  • Patent number: 8716822
    Abstract: A solid-state imaging device according to an embodiment includes: a plurality of pixels arranged on a first face of a first semiconductor layer, each of the pixels including a photoelectric conversion element converting light entering through a second face of the first semiconductor layer on the opposite side from the first face into a signal charge, the photoelectric conversion element having a pn junction formed with a first semiconductor region formed on the first face and a second semiconductor region formed on a surface of the first semiconductor region; pixel separating regions separating the pixels from one another and formed between the pixels, each of the pixel separating regions including a second semiconductor layer covering faces in contact with the photoelectric conversion elements, and an insulating film with a lower refractive index than a refractive index of the second semiconductor layer to cover the second semiconductor layer.
    Type: Grant
    Filed: February 1, 2012
    Date of Patent: May 6, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Risako Ueno, Kazuhiro Suzuki, Hideyuki Funaki, Yoshinori Iida
  • Patent number: 8711267
    Abstract: According to an embodiment, a solid-state imaging device includes: an imaging element formed on a semiconductor substrate; a first optical system configured to focus an image of a subject on an imaging plane; a second optical system including a microlens array including a plurality of microlenses corresponding to the pixel blocks, and re-focusing the image of the imaging plane onto the pixel blocks corresponding to the respective microlenses; a first filter placed on the second optical system, and including a plurality of first color filters corresponding to the microlenses; and a second filter placed on the imaging element, and including a plurality of second color filters corresponding to the first color filters of the first filter. The first and second filters are designed so that the first and second color filters deviate to a periphery of the imaging area, the deviation becoming larger toward the periphery of the imaging area.
    Type: Grant
    Filed: March 3, 2011
    Date of Patent: April 29, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Risako Ueno, Yoshinori Iida, Hideyuki Funaki
  • Patent number: 8604581
    Abstract: A solid-state image pickup device has a photoelectric conversion element that converts light incident from a first surface of a substrate into a signal charge and accumulates the signal charge, a transistor that is formed on a second surface side opposite to the first surface of the substrate and reads out the signal charge accumulated by the photoelectric conversion element, a supporting substrate stuck to the second surface of the substrate, and an antireflection coating formed on the first surface of the substrate, wherein the first surface of the substrate includes a curved surface or an inclined surface forming a prescribed angle to the second surface.
    Type: Grant
    Filed: September 16, 2008
    Date of Patent: December 10, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Risako Ueno, Hideyuki Funaki, Yoshinori Iida, Hiroto Honda
  • Patent number: 8445950
    Abstract: Certain embodiments provide a solid-state imaging device including: a plurality of pixels provided on a semiconductor substrate, each of the pixels having a semiconductor region that converts incident light from a side of a first face of the semiconductor substrate into signal charges and stores the signal charges; a readout circuit provided on a side of a second face that is the opposite side from the first face, and reading out the signal charges stored in the pixels; and a pixel separation structure provided between adjacent ones of the pixels in the semiconductor substrate, the pixel separation structure including a stack film buried in a trench extending from the first face, the stack film including a first insulating film provided along side faces and a bottom face of the trench, and a fixed charge film provided in the trench to cover the first insulating film and retaining fixed charges that are non-signal charges.
    Type: Grant
    Filed: September 3, 2010
    Date of Patent: May 21, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yoshinori Iida, Risako Ueno, Kazuhiro Suzuki, Hideyuki Funaki
  • Patent number: 8368787
    Abstract: An image sensor includes an imaging area including a plurality of cells arrayed in a matrix on a semiconductor substrate, each of the cells including an avalanche photodiode, the avalanche photodiode including: an anode region buried in an upper portion of the semiconductor substrate; a cathode region buried in the upper portion of the semiconductor substrate separated from the anode region in a direction parallel to the surface of the semiconductor substrate; and an avalanche multiplication region defined between the anode and cathode regions, the avalanche multiplication region having an impurity concentration less than the anode and cathode regions; wherein depths of the anode and cathode regions from the surface of the semiconductor substrate are different from each other.
    Type: Grant
    Filed: March 14, 2011
    Date of Patent: February 5, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Yoshinori Iida
  • Patent number: 8338901
    Abstract: Certain embodiments provide a solid-state imaging device including: a photoelectric converting unit that includes a semiconductor layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type, converts incident light entering a first surface of the semiconductor substrate into signal charges, and stores the signal charges; a readout circuit that reads the signal charges stored by the photoelectric converting unit; an antireflection structure that is provided on the first surface of the semiconductor substrate to cover the semiconductor layer of the photoelectric converting unit, includes a fixed charge film that retains fixed charges being non-signal charges, and prevents reflection of the incident light; and a hole storage region that is provided between the photoelectric converting unit and the antireflection structure, and stores holes being non-signal charges.
    Type: Grant
    Filed: September 3, 2010
    Date of Patent: December 25, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Risako Ueno, Kazuhiro Suzuki, Hideyuki Funaki, Yoshinori Iida, Tatsuo Shimizu, Masamichi Suzuki
  • Publication number: 20120133011
    Abstract: A solid-state imaging device according to an embodiment includes: a plurality of pixels arranged on a first face of a first semiconductor layer, each of the pixels including a photoelectric conversion element converting light entering through a second face of the first semiconductor layer on the opposite side from the first face into a signal charge, the photoelectric conversion element having a pn junction formed with a first semiconductor region formed on the first face and a second semiconductor region formed on a surface of the first semiconductor region; pixel separating regions separating the pixels from one another and formed between the pixels, each of the pixel separating regions including a second semiconductor layer covering faces in contact with the photoelectric conversion elements, and an insulating film with a lower refractive index than a refractive index of the second semiconductor layer to cover the second semiconductor layer.
    Type: Application
    Filed: February 1, 2012
    Publication date: May 31, 2012
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Risako Ueno, Kazuhiro Suzuki, Hideyuki Funaki, Yoshinori Iida
  • Publication number: 20120050589
    Abstract: According to an embodiment, a solid-state imaging device includes: an imaging element formed on a semiconductor substrate; a first optical system configured to focus an image of a subject on an imaging plane; a second optical system including a microlens array including a plurality of microlenses corresponding to the pixel blocks, and re-focusing the image of the imaging plane onto the pixel blocks corresponding to the respective microlenses; a first filter placed on the second optical system, and including a plurality of first color filters corresponding to the microlenses; and a second filter placed on the imaging element, and including a plurality of second color filters corresponding to the first color filters of the first filter. The first and second filters are designed so that the first and second color filters deviate to a periphery of the imaging area, the deviation becoming larger toward the periphery of the imaging area.
    Type: Application
    Filed: March 3, 2011
    Publication date: March 1, 2012
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Risako Ueno, Yoshinori Iida, Hideyuki Funaki
  • Patent number: 8089543
    Abstract: A solid-state image pickup element includes: a semiconductor layer of a first conductivity type; a pixel area having pixels formed in a matrix form, each of the pixels including a photoelectric conversion element having a pn junction formed of the semiconductor layer of the first conductivity type and a first semiconductor region of a second conductivity type, a second semiconductor region of the first conductivity type formed on a first surface side of the semiconductor layer, and potential control wiring connected electrically to the second semiconductor region; and a pixel signal readout circuit including at least one MOS transistor formed on the first surface side of the semiconductor layer in the pixel area to have a source and a drain formed of an impurity region of the second conductivity type. Incidence of light to the photoelectric conversion element is made from a second surface side opposite to the first surface side.
    Type: Grant
    Filed: January 8, 2009
    Date of Patent: January 3, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Yoshinori Iida
  • Patent number: 8040413
    Abstract: In a pixel unit, W, R, G, and B pixels are arranged in rows and columns. The pixel unit output W, R, G, and B signals obtained by photoelectrically converting light incident on the W, R, G, and B pixels. An edge detection unit determines a specific area having a W pixel provided with a white filter as a central pixel in the pixel unit, divides the specific area into blocks including the central pixel, and detects edge information as to whether there is an edge of an image in each of the blocks. A block select unit selects a block with no edge from the edge information. A ratio calculating unit calculates the ratio coefficients of the R, G, and B signals from the selected block. An RGB signal generator generates new R, G, and B signals from the W signal of the central pixel using the ratio coefficients.
    Type: Grant
    Filed: January 24, 2008
    Date of Patent: October 18, 2011
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yoshitaka Egawa, Hiroto Honda, Yoshinori Iida
  • Publication number: 20110220976
    Abstract: Certain embodiments provide a solid-state imaging device including: a semiconductor substrate of a first conductivity type having a first face and a second face that is the opposite side from the first face; a plurality of pixels provided on the first face of the semiconductor substrate, each of the pixels including a semiconductor region of a second conductivity type that converts incident light into signal charges, and stores the signal charges; a readout circuit provided on the second face of the semiconductor substrate to read the signal charges stored in the pixels; an ultrafine metal structure placed at intervals on a face on a side of the semiconductor region, the light being incident on the face; and an insulating layer provided between the ultrafine metal structure and the semiconductor region.
    Type: Application
    Filed: September 3, 2010
    Publication date: September 15, 2011
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Yoshinori IIDA, Eishi Tsutsumi, Akira Fujimoto, Koji Asakawa, Hisayo Momose, Koichi Kokubun, Nobuyuki Momo
  • Patent number: 7990447
    Abstract: A solid-state image sensor has a plurality of pixels, a read-out circuit and a signal processing section. The plurality of pixels includes a plurality of first pixels, a plurality of second pixels, a plurality of third pixels and a plurality of fourth pixels.
    Type: Grant
    Filed: June 14, 2007
    Date of Patent: August 2, 2011
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroto Honda, Yoshinori Iida, Yoshitaka Egawa, Goh Itoh
  • Publication number: 20110175187
    Abstract: Certain embodiments provide a solid-state imaging device including: a photoelectric converting unit that includes a semiconductor layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type, converts incident light entering a first surface of the semiconductor substrate into signal charges, and stores the signal charges; a readout circuit that reads the signal charges stored by the photoelectric converting unit; an antireflection structure that is provided on the first surface of the semiconductor substrate to cover the semiconductor layer of the photoelectric converting unit, includes a fixed charge film that retains fixed charges being non-signal charges, and prevents reflection of the incident light; and a hole storage region that is provided between the photoelectric converting unit and the antireflection structure, and stores holes being non-signal charges.
    Type: Application
    Filed: September 3, 2010
    Publication date: July 21, 2011
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Risako Ueno, Kazuhiro Suzuki, Hideyuki Funaki, Yoshinori Iida, Tatsuo Shimizu, Masamichi Suzuki
  • Publication number: 20110164158
    Abstract: An image sensor includes an imaging area including a plurality of cells arrayed in a matrix on a semiconductor substrate, each of the cells including an avalanche photodiode, the avalanche photodiode including: an anode region buried in an upper portion of the semiconductor substrate; a cathode region buried in the upper portion of the semiconductor substrate separated from the anode region in a direction parallel to the surface of the semiconductor substrate; and an avalanche multiplication region defined between the anode and cathode regions, the avalanche multiplication region having an impurity concentration less than the anode and cathode regions; wherein depths of the anode and cathode regions from the surface of the semiconductor substrate are different from each other.
    Type: Application
    Filed: March 14, 2011
    Publication date: July 7, 2011
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventor: Yoshinori IIDA
  • Publication number: 20110155890
    Abstract: According to one embodiments, a pixel array unit in which pixels PC are arranged in a matrix manner, a sample-and-hold signal conversion circuit that detects a signal component of each of the pixels PC in a CDS, and a timing control circuit that controls to sample a reference level of an analog CDS after a reference level of a digital CDS is converted into a digital value are included.
    Type: Application
    Filed: December 2, 2010
    Publication date: June 30, 2011
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yoshitaka Egawa, Yoshinori Iida
  • Publication number: 20110156186
    Abstract: Certain embodiments provide a solid-state imaging device including: a plurality of pixels provided on a semiconductor substrate, each of the pixels having a semiconductor region that converts incident light from a side of a first face of the semiconductor substrate into signal charges and stores the signal charges; a readout circuit provided on a side of a second face that is the opposite side from the first face, and reading out the signal charges stored in the pixels; and a pixel separation structure provided between adjacent ones of the pixels in the semiconductor substrate, the pixel separation structure including a stack film buried in a trench extending from the first face, the stack film including a first insulating film provided along side faces and a bottom face of the trench, and a fixed charge film provided in the trench to cover the first insulating film and retaining fixed charges that are non-signal charges.
    Type: Application
    Filed: September 3, 2010
    Publication date: June 30, 2011
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Yoshinori Iida, Risako Ueno, Kazuhiro Suzuki, Hideyuki Funaki