Abstract: A flexible access control for a plurality of terminal apparatuses in a physically-secured area is realized. An information processing apparatus includes a first acquisition unit configured to acquire a result of authentication performed when a specific user enters a target work room, a second acquisition unit configured to acquire a monitoring result obtained by periodically monitoring a staying state of the specific user in a work area including a target work terminal in the target work room, and an access control unit configured to permit access to the target work terminal when a first condition is satisfied, the first condition being a condition that the monitoring result indicates that the specific user stays in the work area after he/she is permitted to enter the target work room based on the authentication result.

Abstract: A flexible access control for a plurality of terminal apparatuses in a physically-secured area is realized. An information processing apparatus includes a first acquisition unit configured to acquire a result of authentication performed when a specific user enters a target work room, a second acquisition unit configured to acquire a monitoring result obtained by periodically monitoring a staying state of the specific user in a work area including a target work terminal in the target work room, and an access control unit configured to permit access to the target work terminal when a first condition is satisfied, the first condition being a condition that the monitoring result indicates that the specific user stays in the work area after he/she is permitted to enter the target work room based on the authentication result.

Abstract: To provide a polishing technique with which in production of a semiconductor integrated circuit device, when a plane to be polished is polished, an appropriate polishing rate ratio of a polysilicon film to another material can be obtained, whereby high level planarization of a plane to be polished including a polysilicon film can be realized. A polishing compound for chemical mechanical polishing, containing cerium oxide particles, a water-soluble polyamine and water and having a pH within a range of from 10 to 13, is used.

Abstract: A method for producing a glass substrate for a magnetic disk by polishing a circular glass plate, which comprises a step of polishing the principal plane of the circular glass plate by using a slurry containing a CeO2 crystal powder, the CeO2 crystal powder being obtained in such a manner that a melt containing CeO2 is quenched to obtain an amorphous material, and the amorphous material is subjected to heat treatment to obtain a CeO2 crystals-precipitated amorphous material, which is subjected to acid treatment to separate and extract the CeO2 crystal powder from the CeO2 crystals-precipitated amorphous material.

Abstract: A heterocyclic benzene compound such as benzotriazole, is dissolved in at least one substance selected from the group consisting of a primary alcohol having from 1 to 4 carbon atoms, a glycol having from 2 to 4 carbon atoms, an ether represented by the Formula 2 (wherein m is an integer of from 1 to 4), N-methyl-2-pyrrolidone, N,N-dimethylformamide, dimethyl sulfoxide, ?-butyrolactone and propylene carbonate, and an aqueous dispersion of fine oxide particles which constitute abrasive grains is mixed therewith, whereby a polishing compound is obtained. By use of this polishing compound in polishing a substrate provided with an insulating film 2 on which a wiring metal film 4 and a barrier film 3 are formed, the formation of an embedded wiring 5 is made possible with low dishing, low erosion and low scratching at a high removal rate.

Abstract: To provide a technique employed when a plane to be polished of a silicon dioxide type material layer is polished in production of a semiconductor integrated circuit device, which is capable of polishing protruded portions by priority while suppressing polishing at recessed portions and planarizing the plane to be polished at a high level with an extremely small polishing amount, with small pattern dependence of the polishing rate. In production of a semiconductor integrated circuit device, when a plane to be polished is a plane to be polished of a silicon dioxide type material layer, a polishing compound containing cerium oxide particles, a water-soluble polyamine and water is used as a polishing compound for chemical mechanical polishing to polish the plane to be polished.

Abstract: A semiconductor polishing compound comprising cerium oxide abrasive grains, water and an additive, wherein the additive is a water-soluble organic polymer such as ammonium polyacrylate or an anionic surfactant, the pH at 25° C. is from 3.5 to 6, and the concentration of the additive is from 0.01 to 0.5% based on the total mass of the polishing compound. This polishing compound simultaneously has dispersion stability, excellent scratch characteristics and excellent polishing planarization characteristics. In particular, this polishing compound provides excellent planarization characteristics having dishing fluctuation reduced, when used for polishing a semiconductor substrate having a silicon nitride film 3 and a silicon oxide film 2 formed on a silicon substrate 1. Further, the time for polishing a pattern wafer can be shortened by using this polishing compound.

Abstract: A method for producing a glass substrate for a magnetic disk by polishing a circular glass plate, which comprises a step of polishing the principal plane of the circular glass plate by using a slurry containing at least one water-soluble polymer selected from the group consisting of a water-soluble organic polymer having amino groups, a water-soluble organic polymer having amine salt groups and a water-soluble organic polymer having quaternary ammonium salt groups, and colloidal silica.

Abstract: An object of the present invention is to provide a polishing agent for a semiconductor, which is used for polishing a to-be-polished surface of a silicon dioxide-based material layer in the production of a semiconductor integrated circuit device and which is excellent in the dispersion stability and produces less defects such as scratch and has excellent planarization characteristics in polishing.

Abstract: The present invention is to provide a polishing technique ensuring that when polishing a to-be-polished surface in the production of a semiconductor integrated circuit device, appropriate polishing rate ratios can be obtained between a borophosphosilicate glass material layer and other materials and high planarization of the to-be-polished surface containing a borophosphosilicate glass material layer can be thereby realized. The present invention relates to a polishing agent for chemical mechanical polishing, containing a cerium oxide particle, a water-soluble polyamine, one or more basic compounds selected from the group consisting of monoethanolamine, ethylethanolamine, diethanolamine and ammonia, and water, wherein the polishing agent has a pH of from 10 to 13 and wherein the basic compound is contained in an amount of more than 0.01 mass %.

Abstract: To provide a semiconductor polishing compound which is excellent in dispersion stability and removal rate and which has a stabilized polishing property, as it is less susceptible to an influence even when contacted with an alkaline polishing compound during its application to CMP comprising a multistage process. A polishing compound for chemical mechanical polishing to polish a surface to be polished in the production of a semiconductor circuit device, said polishing compound comprising cerium oxide abrasive particles, water and a dicarboxylic acid represented by the formula 1: HOOC(CH2)nCOOH??Formula 1 wherein n is an integer of from 1 to 4, and the pH of said polishing compound at 25° C. being within a range of from 3.5 to 6.

Abstract: To provide a technique employed when a plane to be polished of a silicon dioxide type material layer is polished in production of a semiconductor integrated circuit device, which is capable of polishing protruded portions by priority while suppressing polishing at recessed portions and planarizing the plane to be polished at a high level with an extremely small polishing amount, with small pattern dependence of the polishing rate. In production of a semiconductor integrated circuit device, when a plane to be polished is a plane to be polished of a silicon dioxide type material layer, a polishing compound containing cerium oxide particles, a water-soluble polyamine and water is used as a polishing compound for chemical mechanical polishing to polish the plane to be polished.

Abstract: To provide a polishing technique with which in production of a semiconductor integrated circuit device, when a plane to be polished is polished, an appropriate polishing rate ratio of a polysilicon film to another material can be obtained, whereby high level planarization of a plane to be polished including a polysilicon film can be realized. A polishing compound for chemical mechanical polishing, containing cerium oxide particles, a water-soluble polyamine and water and having a pH within a range of from 10 to 13, is used.

Abstract: A method for producing a glass substrate for a magnetic disk by polishing a circular glass plate, which comprises a step of polishing the principal plane of the circular glass plate by using a slurry containing at least one water-soluble polymer selected from the group consisting of a water-soluble organic polymer having amino groups, a water-soluble organic polymer having amine salt groups and a water-soluble organic polymer having quaternary ammonium salt groups, and colloidal silica.

Abstract: A method for producing a glass substrate for a magnetic disk by polishing a circular glass plate, which comprises a step of polishing the principal plane of the circular glass plate by using a slurry containing a CeO2 crystal powder, the CeO2 crystal powder being obtained in such a manner that a melt containing CeO2 is quenched to obtain an amorphous material, and the amorphous material is subjected to heat treatment to obtain a CeO2 crystals-precipitated amorphous material, which is subjected to acid treatment to separate and extract the CeO2 crystal powder from the CeO2 crystals-precipitated amorphous material.

Abstract: A semiconductor polishing compound comprising cerium oxide abrasive grains, water and an additive, wherein the additive is a water-soluble organic polymer such as ammonium polyacrylate or an anionic surfactant, the pH at 25° C. is from 3.5 to 6, and the concentration of the additive is from 0.01 to 0.5% based on the total mass of the polishing compound. This polishing compound simultaneously has dispersion stability, excellent scratch characteristics and excellent polishing planarization characteristics. In particular, this polishing compound provides excellent planarization characteristics having dishing fluctuation reduced, when used for polishing a semiconductor substrate having a silicon nitride film 3 and a silicon oxide film 2 formed on a silicon substrate 1. Further, the time for polishing a pattern wafer can be shortened by using this polishing compound.

Abstract: A heterocyclic benzene compound such as benzotriazole, is dissolved in at least one substance selected from the group consisting of a primary alcohol having from 1 to 4 carbon atoms, a glycol having from 2 to 4 carbon atoms, an ether represented by the Formula 2 (wherein m is an integer of from 1 to 4), N-methyl-2-pyrrolidone, N,N-dimethylformamide, dimethyl sulfoxide, &ggr;-butyrolactone and propylene carbonate, and an aqueous dispersion of fine oxide particles which constitute abrasive grains is mixed therewith, whereby a polishing compound is obtained. By use of this polishing compound in polishing a substrate provided with an insulating film 2 on which a wiring metal film 4 and a barrier film 3 are formed, the formation of an embedded wiring 5 is made possible with low dishing, low erosion and low scratching at a high removal rate.

Abstract: A process for producing a silica-alumina composite sol, which comprises mixing a silica hydrogel and an aluminum salt which, when dissolved in water, gives an acidic solution.

Abstract: A process for producing a silica-alumina composite sol, which comprises mixing a silica hydrogel and an aluminum salt which, when dissolved in water, gives an acidic solution.