Patents by Inventor Yoshinori MURABA

Yoshinori MURABA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Zinc nitride compound and method for producing same
    Patent number: 10737947
    Abstract: The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn2N2 or the chemical formula X12ZnN2 wherein X1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.
    Type: Grant
    Filed: April 17, 2019
    Date of Patent: August 11, 2020
    Assignee: PANASONIC CORPORATION
    Inventors: Fumiyasu Oba, Hideo Hosono, Hidenori Hiramatsu, Hideya Kumomi, Yu Kumagai, Soshi Iimura, Yoshinori Muraba, Lee Alan Burton, Isao Tanaka, Yoyo Hinuma
  • ZINC NITRIDE COMPOUND AND METHOD FOR PRODUCING SAME
    Publication number: 20190248670
    Abstract: The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn2N2 or the chemical formula X12ZnN2 wherein X1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.
    Type: Application
    Filed: April 17, 2019
    Publication date: August 15, 2019
    Inventors: Fumiyasu OBA, Hideo HOSONO, Hidenori HIRAMATSU, Hideya KUMOMI, Yu KUMAGAI, Soshi IIMURA, Yoshinori MURABA, Lee Alan BURTON, Isao TANAKA, Yoyo HINUMA
  • Zinc nitride compound and method for producing same
    Patent number: 10308521
    Abstract: The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn2N2 or the chemical formula X12ZnN2 wherein X1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.
    Type: Grant
    Filed: October 14, 2016
    Date of Patent: June 4, 2019
    Assignee: PANASONIC CORPORATION
    Inventors: Fumiyasu Oba, Hideo Hosono, Hidenori Hiramatsu, Hideya Kumomi, Yu Kumagai, Soshi Iimura, Yoshinori Muraba, Lee Alan Burton, Isao Tanaka, Yoyo Hinuma
  • ZINC NITRIDE COMPOUND AND METHOD FOR PRODUCING SAME
    Publication number: 20180354791
    Abstract: The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn2N2 or the chemical formula X12ZnN2 wherein X1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.
    Type: Application
    Filed: October 14, 2016
    Publication date: December 13, 2018
    Inventors: Fumiyasu OBA, Hideo HOSONO, Hidenori HIRAMATSU, Hideya KUMOMI, Yu KUMAGAI, Soshi IIMURA, Yoshinori MURABA, Lee Alan BURTON, Isao TANAKA, Yoyo HINUMA