Abstract: An oscillation device includes a waveguide structure including a first conductor layer, a second conductor layer, and a semiconductor layer disposed between the first conductor layer and the second conductor layer and having a gain of an electromagnetic wave, an antenna unit configured to radiate the electromagnetic wave, a first connecting portion configured to connect the waveguide structure and the antenna unit, and a second connecting portion configured to connect the waveguide structure and the antenna unit. A first connecting position of the first connecting portion and the waveguide structure and a second connecting position of the second connecting portion and the waveguide structure are different from each other in a resonance direction in which the electromagnetic wave that resonates the waveguide structure resonates.

Abstract: There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.

Abstract: There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.

Abstract: An oscillator includes a resonator configured to resonate an electromagnetic wave in a resonant axis direction and a capacitance unit electrically connected in parallel to the resonator. The resonator includes a negative resistor, a first conductive layer, and a second conductive layer, where the negative resistor has a gain to the electromagnetic wave and is disposed between and in contact with the first conductive layer and the second conductive layer. At a resonant frequency fLC generated by an inductance Ls which the wiring configured to electrically connect the capacitance unit to the resonator and the capacitance unit constitute, and an inner capacitance Cwg of the resonator, a conductance including the inductance Ls, a resistance component Rs of the wiring and the capacitance unit, and a capacitance C of the capacitance unit is equal to or higher than an absolute value Gwg of negative conductance of the negative resistor.

Abstract: Provided is a waveguide element, including: a waveguide for guiding an electromagnetic wave; a resonance antenna for radiating or receiving the electromagnetic wave, the resonance antenna being arranged at a part of the waveguide for radiating or receiving the electromagnetic wave; and an impedance matching portion for matching an impedance of the waveguide with an impedance of the resonance antenna so as to couple the waveguide to the resonance antenna. The waveguide includes: a first conductor layer and a second conductor layer each having a negative dielectric constant real part for the electromagnetic wave; and a core layer arranged between the first conductor layer and the second conductor layer. The core layer has one of a gain of the electromagnetic wave and nonlinearity of carriers for the electromagnetic wave.

Abstract: An oscillation device that produces an oscillating electromagnetic wave includes a resonator, a conducting wall, and a first conductor layer. The resonator includes a waveguide structure for resonating the electromagnetic wave and a dielectric layer. The waveguide structure includes a second conductor layer, a gain medium disposed on the second conductor layer, and a third conductor layer disposed on the gain medium. The dielectric layer is disposed on the second conductor layer and along a side of the gain medium. The conducting wall is separated from the gain medium by the dielectric layer and is disposed at a positions of a node of an electric field of a standing electromagnetic wave in the waveguide structure in the resonance axis direction. An optical distance between the side of the gain medium and the conducting wall is equal to or smaller than one fourth of a wavelength of the electromagnetic wave.

Abstract: An oscillator includes a resonator configured to resonate an electromagnetic wave in a resonant axis direction and a capacitance unit electrically connected in parallel to the resonator. The resonator includes a negative resistor, a first conductive layer, and a second conductive layer, where the negative resistor has a gain to the electromagnetic wave and is disposed between and in contact with the first conductive layer and the second conductive layer. At a resonant frequency fLC generated by an inductance Ls which the wiring configured to electrically connect the capacitance unit to the resonator and the capacitance unit constitute, and an inner capacitance Cwg of the resonator, a conductance including the inductance Ls, a resistance component Rs of the wiring and the capacitance unit, and a capacitance C of the capacitance unit is equal to or higher than an absolute value Gwg of negative conductance of the negative resistor.

Abstract: Provided is a waveguide element, including: a waveguide for guiding an electromagnetic wave; a resonance antenna for radiating or receiving the electromagnetic wave, the resonance antenna being arranged at a part of the waveguide for radiating or receiving the electromagnetic wave; and an impedance matching portion for matching an impedance of the waveguide with an impedance of the resonance antenna so as to couple the waveguide to the resonance antenna. The waveguide includes: a first conductor layer and a second conductor layer each having a negative dielectric constant real part for the electromagnetic wave; and a core layer arranged between the first conductor layer and the second conductor layer. The core layer has one of a gain of the electromagnetic wave and nonlinearity of carriers for the electromagnetic wave.

Abstract: There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.

Abstract: An oscillation device 100 for electromagnetic wave oscillation includes: a resonator section 101 that causes an electromagnetic wave to resonate; and an antenna section 102 that is arranged at an end facet of the resonator section 101 and has a multilayer structure including two conductor layers 104 and 105 for causing the electromagnetic wave to be emitted the from the resonator section 101, the two conductor layers 104 and 105 being separated from each other by a gap in the stacking direction of the multilayer structure and having a at least partly overlapping matching area 110 for impedance matching; the matching area 110 having a tapered profile of being tapered in the extending direction thereof from the resonator section 101 toward the antenna section 102 as viewed in the stacking direction.

Abstract: There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.

Abstract: The present invention provides a purified metal complex having oxalic acid as a ligand and a method for industrially producing a purified non-aqueous solvent solution of the metal complex at low cost. In the method of the present invention, oxalic acid contained in a non-aqueous solvent solution of a metal complex having oxalic acid as a ligand is decomposed by a reaction with a thionyl halide in a non-aqueous solvent, and the decomposition product of the reaction and the unreacted thionyl halide are removed by deaeration.

Abstract: There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.

Abstract: There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.

Abstract: A method for manufacturing a field-effect transistor is provided. The field-effect transistor includes on a substrate a source electrode, a drain electrode, an oxide semiconductor layer, an insulating layer and a gate electrode. The method includes, after forming the insulating layer on the oxide semiconductor layer, an annealing step of increasing the electrical conductivity of the oxide semiconductor layers by annealing in an atmosphere containing moisture. The steam pressure at the annealing step is higher than the saturated vapor pressure in the atmosphere at the annealing temperature.

Abstract: There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.

Abstract: A method for manufacturing a field-effect transistor is provided. The field-effect transistor includes on a substrate a source electrode, a drain electrode, an oxide semiconductor layer, an insulating layer and a gate electrode. The method includes, after forming the insulating layer on the oxide semiconductor layer, an annealing step of increasing the electrical conductivity of the oxide semiconductor layers by annealing in an atmosphere containing moisture. The steam pressure at the annealing step is higher than the saturated vapor pressure in the atmosphere at the annealing temperature.

Abstract: In a method of manufacturing a thin film transistor, in a first deposition step a light shield film is deposited on a substrate. In a second deposition step a semiconductor film is deposited for forming a channel of the transistor on the light shield film. In a patterning step the light shield film and the semiconductor film are simultaneously shaped into the same shape pattern. In an electrode forming step a source electrode and a drain electrode which are respectively in contact with both end-portions of the shaped semiconductor film are formed. An insulator film is formed so that the insulator film covers the source and drain electrodes and the semiconductor film. A gate electrode is formed at a location on the insulator film corresponding to the semiconductor film.

Abstract: For the object of reducing a burden of TFT manufacturing process and a manufacturing cost, a thin film transistor is manufactured by means of the following steps: (i) a first deposition step of depositing a light shield film (3) on a substrate (1, 2); (ii) a second deposition step of depositing a semiconductor film (4) for forming a channel of the transistor on the light shield film (3); (iii) a patterning step of shaping the light shield film (3) and the semiconductor film (4) simultaneously into the same shape pattern; (iv) an electrode forming step of forming a source electrode (7) and a drain electrode (8) which are respectively in contact with both end-portions of the shaped semiconductor film (4); (v) a step of forming an insulator film (9) so that the insulator film (9) covers the source and drain electrodes (7, 8), and the semiconductor film (4); and (vi) a step of forming a gate electrode (10) at a location on the insulator film (9), corresponding to the semiconductor film (4).

Abstract: For the object of reducing a burden of TFT manufacturing process and a manufacturing cost, a thin film transistor is manufactured by means of the following steps: (i) a first deposition step of depositing a light shield film (3) on a substrate (1, 2); (ii) a second deposition step of depositing a semiconductor film (4) for forming a channel of the transistor on the light shield film (3); (iii) a patterning step of shaping the light shield film (3) and the semiconductor film (4) simultaneously into the same shape pattern; (iv) an electrode forming step of forming a source electrode (7) and a drain electrode (8) which are respectively in contact with both end-portions of the shaped semiconductor film (4); (v) a step of forming an insulator film (9) so that the insulator film (9) covers the source and drain electrodes (7, 8), and the semiconductor film (4); and (vi) a step of forming a gate electrode (10) at a location on the insulator film (9), corresponding to the semiconductor film (4).