Patents by Inventor Yoshio Takimoto

Yoshio Takimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220310212
    Abstract: A method is implemented to select a calculator for performing given processing using a quantum algorithm or a combined algorithm of a classical algorithm and the quantum algorithm. The method comprises a calculation operation, a selection operation, and a control operation. The calculation operation calculates a quantum bit or a quantum volume for performing the given processing using the quantum algorithm, or for a portion of the quantum algorithm when performing the given processing using the combined algorithm. The selection operation selects a calculator for performing the given processing based on the quantum bit or the quantum volume. The control operation generates a control signal to be transmitted to the quantum calculator when the selected calculator includes a quantum calculator. The control signal may correspond to an instruction that initiates the quantum calculator to start the quantum algorithm.
    Type: Application
    Filed: June 15, 2022
    Publication date: September 29, 2022
    Applicant: JSR CORPORATION
    Inventors: Junta Fuchiwaki, Yuya Onishi, Yoshio Takimoto
  • Publication number: 20220172803
    Abstract: A chemical structure generating device according to the present invention includes a generator and a controller. The generator produces a product list including one or more compounds, based on a reactant list including one or more compounds and a chemical reaction list. The controller applies the product list as a new reactant list to the generator, updates a database having at least one list of the reactant list and the product list, and allows the generator to produce a new product list based on the new reactant list and the chemical reaction list.
    Type: Application
    Filed: February 15, 2022
    Publication date: June 2, 2022
    Applicant: JSR CORPORATION
    Inventors: Junta FUCHIWAKI, Yoshio Takimoto
  • Patent number: 11126084
    Abstract: A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. R1 represents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; L1 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group; R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3.
    Type: Grant
    Filed: April 18, 2019
    Date of Patent: September 21, 2021
    Assignee: JSR CORPORATION
    Inventors: Naoya Nosaka, Goji Wakamatsu, Tsubasa Abe, Yuushi Matsumura, Yoshio Takimoto, Shin-ya Nakafuji, Kazunori Sakai
  • Patent number: 11003079
    Abstract: The composition for film formation includes a compound including a group of the formula (1) and a solvent. In the formula (1), R1 to R4 each independently represent a hydrogen atom, a monovalent organic group having 1 to 20 carbon atoms, or R1 to R4 taken together represent a cyclic structure having 3 to 20 ring atoms together with the carbon atom or a carbon chain to which R1 to R4 bond. Ar1 represents a group obtained by removing (n+3) hydrogen atoms from an aromatic ring of an arene having 6 to 20 carbon atoms. n is an integer of 0 to 9. R5 represents a hydroxy group, a halogen atom, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: May 11, 2021
    Assignee: JSR CORPORATION
    Inventors: Naoya Nosaka, Gouji Wakamatsu, Tsubasa Abe, Yuushi Matsumura, Masayuki Miyake, Yoshio Takimoto
  • Publication number: 20200401175
    Abstract: To provide a constant voltage DC supply device capable of supplying a direct current at a predetermined voltage for a long time irrespective of characteristics of a storage battery and the like.
    Type: Application
    Filed: February 26, 2019
    Publication date: December 24, 2020
    Inventors: Takashi KAMEZAWA, Yoshio TAKIMOTO, Akihiko TANAKA
  • Publication number: 20190264035
    Abstract: A substrate-treating method includes applying a treatment agent directly or indirectly on one face of a substrate to form a substrate pattern collapse-inhibitory film. The substrate includes a pattern on the one face. The substrate pattern collapse-inhibitory film is removed by dry etching after forming the substrate pattern collapse-inhibitory film. The treatment agent includes a compound including an aromatic ring, and a hetero atom-containing group that bonds to the aromatic ring; and a solvent.
    Type: Application
    Filed: April 18, 2019
    Publication date: August 29, 2019
    Applicant: JSR CORPORATION
    Inventors: Shun AOKI, Kang-go CHUNG, Yuushi MATSUMURA, Tomohiro MATSUKI, Yoshio TAKIMOTO
  • Publication number: 20190243247
    Abstract: A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. R1 represents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; L1 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group; R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3.
    Type: Application
    Filed: April 18, 2019
    Publication date: August 8, 2019
    Applicant: JSR CORPORATION
    Inventors: Naoya NOSAKA, Goji Wakamatsu, Tsubasa Abe, Yuushi Matsumura, Yoshio Takimoto, Shin-ya Nakafuji, Kazunori Sakai
  • Publication number: 20190094695
    Abstract: The composition for film formation includes a compound including a group of the formula (1) and a solvent. In the formula (1), R1 to R4 each independently represent a hydrogen atom, a monovalent organic group having 1 to 20 carbon atoms, or R1 to R4 taken together represent a cyclic structure having 3 to 20 ring atoms together with the carbon atom or a carbon chain to which R1 to R4 bond. Ar1 represents a group obtained by removing (n+3) hydrogen atoms from an aromatic ring of an arene having 6 to 20 carbon atoms. n is an integer of 0 to 9. R5 represents a hydroxy group, a halogen atom, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms.
    Type: Application
    Filed: November 30, 2018
    Publication date: March 28, 2019
    Applicant: JSR CORPORATION
    Inventors: Naoya NOSAKA, Gouji WAKAMATSU, Tsubasa ABE, Yuushi MATSUMURA, Masayuki MIYAKE, Yoshio TAKIMOTO
  • Patent number: 10234762
    Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing the silicon-containing film with a basic aqueous solution. The pattern-forming method does not include, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound. The silicon-containing film is preferably formed a hydrolytic condensation product of a composition containing a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds. X represents a halogen atom or —OR2, and R2 represents a monovalent organic group.
    Type: Grant
    Filed: September 16, 2016
    Date of Patent: March 19, 2019
    Assignee: JSR CORPORATION
    Inventors: Masayoshi Ishikawa, Hiromitsu Tanaka, Tomoharu Kawazu, Junya Suzuki, Tomoaki Seko, Yoshio Takimoto
  • Patent number: 10146131
    Abstract: A composition includes a compound including a partial structure represented by formula (1), and solvent. In the formula (1), X1 and X2 each independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with the spiro carbon atom and the carbon atoms of the aromatic ring adjacent to X1 or X2; n1 and n2 are each independently an integer of 0 to 2; and the sum of k1 and k2 are each independently an integer of 1 to 8, wherein the sum of k1 and k2 is no less than 2 and no greater than 16. The compound is preferably represented by formula (2). The sum of k1 and k2 in the formula (1) is preferably no less than 3.
    Type: Grant
    Filed: September 23, 2015
    Date of Patent: December 4, 2018
    Assignee: JSR CORPORATION
    Inventors: Shin-ya Nakafuji, Fumihiro Toyokawa, Gouji Wakamatsu, Yoshio Takimoto, Katsuhisa Mizoguchi, Takashi Okada, Takaaki Uno, Takeshi Endo, Masaki Moritsugu
  • Patent number: 10090163
    Abstract: An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a ?-diketone, a ?-keto ester, a ?-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), R1 represents an organic group having a valency of n. X represents —OH, —COOH, —NCO or —NHRa, wherein Ra represents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4.
    Type: Grant
    Filed: August 24, 2015
    Date of Patent: October 2, 2018
    Assignee: JSR CORPORATION
    Inventors: Hisashi Nakagawa, Tatsuya Sakai, Shunsuke Kurita, Satoshi Dei, Kazunori Takanashi, Yoshio Takimoto, Masayuki Motonari
  • Patent number: 10078265
    Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution. Preferably, the pattern-forming method further comprises, after the forming of the silicon-containing film and before the removing of the resist underlayer film and the silicon-containing film, forming a resist pattern on an upper face side of the silicon-containing film, and etching the silicon-containing film using the resist pattern as a mask.
    Type: Grant
    Filed: September 16, 2016
    Date of Patent: September 18, 2018
    Assignee: JSR CORPORATION
    Inventors: Shun Aoki, Hiromitsu Tanaka, Goji Wakamatsu, Yoshio Takimoto, Masayoshi Ishikawa, Toru Kimura
  • Patent number: 10036954
    Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution. Preferably, the pattern-forming method further comprises, after the forming of the silicon-containing film and before the removing of the resist underlayer film and the silicon-containing film, forming a resist pattern on an upper face side of the silicon-containing film, and etching the silicon-containing film using the resist pattern as a mask.
    Type: Grant
    Filed: September 16, 2016
    Date of Patent: July 31, 2018
    Assignee: JSR CORPORATION
    Inventors: Shun Aoki, Hiromitsu Tanaka, Goji Wakamatsu, Yoshio Takimoto, Masayoshi Ishikawa, Toru Kimura
  • Publication number: 20180211828
    Abstract: A composition for forming a film for use in cleaning a semiconductor substrate includes a solvent and a compound having a molecular weight of no s less than 300 and comprising a polar group, a group represented by a formula (i) or a combination thereof. In the formula (i), R1 represents a group that is dissociated by heat or an action of an acid. The polar group is preferably a hydroxy group, a carboxy group, an amide group, an amino group, a sulfonyl group, a sulfo group or a combination thereof. The compound is preferably a polymer having a weight average molecular weight of no less than 300 and no greater than 50,000. The polymer is preferably a ring polymer having a weight average molecular weight of no less than 300 and no greater than 3,000.
    Type: Application
    Filed: March 23, 2018
    Publication date: July 26, 2018
    Applicant: JSR CORPORATION
    Inventors: Kang-go CHUNG, Yuushi Matsumura, Yoshio Takimoto
  • Patent number: 9958781
    Abstract: A method comprises applying a composition on a substrate to form a coating film on the substrate. The coating film is heated in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450° C. and 800° C. or lower, to form a film on the substrate. The composition comprises a compound comprising an aromatic ring. The oxygen concentration in the atmosphere during the heating of the coating film is preferably no greater than 0.1% by volume. The temperature in the atmosphere during the heating of the coating film is preferably 500° C. or higher and 600° C. or lower.
    Type: Grant
    Filed: April 21, 2016
    Date of Patent: May 1, 2018
    Assignee: JSR CORPORATION
    Inventors: Yuushi Matsumura, Goji Wakamatsu, Naoya Nosaka, Tsubasa Abe, Yoshio Takimoto
  • Publication number: 20180068863
    Abstract: A treatment agent for inhibiting substrate pattern collapse contains a polymer and a polar solvent. A treatment method of a substrate includes: applying the treatment agent onto a substrate having a pattern formed thereon; and drying the treatment agent applied onto the substrate. The polymer is preferably a hydrophilic polymer. In addition, the polymer preferably has at least one functional group selected from a hydroxy group, a carboxy group, an amide group, an amino group, a sulfo group and an aldehyde group. Furthermore, the polymer is preferably one selected from a vinyl polymer, a polysaccharide, a polyester, a polyether and a polyamide.
    Type: Application
    Filed: November 14, 2017
    Publication date: March 8, 2018
    Applicant: JSR CORPORATION
    Inventors: Kenji FUJITA, Yoshio TAKIMOTO, Kang-go CHUNG
  • Patent number: 9891526
    Abstract: A pattern-forming method includes applying an inorganic film-forming composition on an upper face side of a substrate to provide an inorganic film, forming a resist pattern on an upper face side of the inorganic film; and dry-etching once or several times using the resist pattern as a mask such that the substrate has a pattern The inorganic film-forming composition includes a polyacid or a salt thereof, and an organic solvent. The step for forming a resist pattern may include the steps of: applying a resist composition on an upper face side of the inorganic film to provide a resist film; exposing the resist film; and developing the resist film exposed.
    Type: Grant
    Filed: January 19, 2016
    Date of Patent: February 13, 2018
    Assignee: JSR CORPORATION
    Inventors: Shunsuke Kurita, Toru Kimura, Yoshio Takimoto, Kazunori Takanashi
  • Publication number: 20170137663
    Abstract: A composition comprises a compound and a solvent. The compound comprises a carbon-carbon triple bond-containing group, and at least one partial structure having an aromatic ring. A total number of benzene nuclei constituting the aromatic ring in the at least one partial structure is no less than 4. The at least one partial structure preferably comprises a partial structure represented by formula (1). The sum of p1, p2, p3 and p4 is preferably no less than 1. At least one of R1 to R4 preferably represents a monovalent carbon-carbon triple bond-containing group. The at least one partial structure also preferably comprises a partial structure represented by formula (2). The sum of q1, q2, q3 and q4 is preferably no less than 1. At least one of R5 to R8 preferably represents a monovalent carbon-carbon triple bond-containing group.
    Type: Application
    Filed: March 3, 2016
    Publication date: May 18, 2017
    Applicant: JSR CORPORATION
    Inventors: Goji WAKAMATSU, Naoya NOSAKA, Yuushi MATSUMURA, Yoshio TAKIMOTO, Tsubasa ABE, Toru KIMURA
  • Patent number: 9607849
    Abstract: A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180° C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask.
    Type: Grant
    Filed: April 10, 2014
    Date of Patent: March 28, 2017
    Assignee: JSR CORPORATION
    Inventors: Kazuhiko Koumura, Shinya Minegishi, Takashi Mori, Kyoyu Yasuda, Yoshio Takimoto, Shinya Nakafuji, Toru Kimura
  • Publication number: 20170003592
    Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing the silicon-containing film with a basic aqueous solution. The pattern-forming method does not include, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound. The silicon-containing film is preferably formed a hydrolytic condensation product of a composition containing a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds. X represents a halogen atom or —OR2, and R2 represents a monovalent organic group.
    Type: Application
    Filed: September 16, 2016
    Publication date: January 5, 2017
    Applicant: JSR CORPORATION
    Inventors: Masayoshi ISHIKAWA, Hiromitsu Tanaka, Tomoharu Kawazu, Junya Suzuki, Tomoaki Seko, Yoshio Takimoto