Patents by Inventor Yoshiro Hirose

Yoshiro Hirose has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9831082
    Abstract: A method of manufacturing a semiconductor device includes forming a thin film having excellent etching resistance and a low dielectric constant on a substrate, removing first impurities containing H2O and Cl from the thin film by heating the thin film at a first temperature higher than a temperature of the substrate in the forming of the thin film, and removing second impurities containing a hydrocarbon compound (CxHy-based impurities) from the thin film in which heat treatment is performed at the first temperature by heating the thin film at a second temperature equal to or higher than the first temperature.
    Type: Grant
    Filed: February 2, 2016
    Date of Patent: November 28, 2017
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Satoshi Shimamoto, Takaaki Noda, Takeo Hanashima, Yoshiro Hirose, Hiroshi Ashihara, Tsukasa Kamakura, Shingo Nohara
  • Patent number: 9816181
    Abstract: A method of manufacturing a semiconductor device, including forming a laminated film on a substrate by performing a cycle a first predetermined number of times. The cycle includes forming a first film which contains a predetermined element, boron, and nitrogen, and forming a second film which contains boron and nitrogen. A composition ratio of boron to nitrogen in the second film is different from that in the first film. The first film and the second film are laminated to form the laminated film.
    Type: Grant
    Filed: January 7, 2015
    Date of Patent: November 14, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Atsushi Sano, Yoshiro Hirose
  • Publication number: 20170301539
    Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by overlapping the following during at least a certain period: (a) supplying a first source to the substrate, the first source including at least one of an inorganic source containing a specific element and a halogen element and an organic source containing the specific element and the halogen element; (b) supplying a second source to the substrate, the second source including at least one of amine, organic hydrazine, and hydrogen nitride; and (c) supplying a third source to the substrate, the third source including at least one of amine, organic hydrazine, hydrogen nitride, and organic borane.
    Type: Application
    Filed: March 30, 2017
    Publication date: October 19, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Atsushi SANO, Yoshiro HIROSE
  • Patent number: 9793107
    Abstract: A method of manufacturing a semiconductor device, includes: forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate.
    Type: Grant
    Filed: March 27, 2014
    Date of Patent: October 17, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Takaaki Noda, Satoshi Shimamoto, Shingo Nohara, Yoshiro Hirose, Kiyohiko Maeda
  • Publication number: 20170294302
    Abstract: A method includes forming a film on a substrate by performing a cycle n times (where n is an integer equal to or greater than 1), the cycle including alternately performing: performing a set m times (where m is an integer equal to or greater than 1), the set including supplying a precursor to the substrate and supplying a borazine compound to the substrate; and supplying an oxidizing agent to the substrate.
    Type: Application
    Filed: June 20, 2017
    Publication date: October 12, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshiro HIROSE, Atsushi SANO, Katsuyoshi HARADA
  • Patent number: 9777370
    Abstract: A method of manufacturing a semiconductor device, including forming a laminated film on a substrate by performing a cycle a first predetermined number of times. The cycle includes forming a first film which contains a predetermined element, boron, and nitrogen, and forming a second film which contains boron and nitrogen. A composition ratio of boron to nitrogen in the second film is different from that in the first film. The first film and the second film are laminated to form the laminated film.
    Type: Grant
    Filed: January 7, 2015
    Date of Patent: October 3, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Atsushi Sano, Yoshiro Hirose
  • Patent number: 9773661
    Abstract: There is provided a method of manufacturing a semiconductor device, comprising forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing forming a first layer by supplying a precursor containing hydrogen and an halogen element to the substrate in a process chamber, under a condition in which the precursor is pyrolyzed if the precursor exists alone and under a condition in which a flow rate of the precursor supplied into the process chamber is larger than a flow rate of the precursor exhausted from an interior of the process chamber and forming a second layer by supplying a reactant to the substrate in the process chamber thereby modifying the first layer.
    Type: Grant
    Filed: June 1, 2016
    Date of Patent: September 26, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Takafumi Nitta, Satoshi Shimamoto, Yoshiro Hirose
  • Publication number: 20170271144
    Abstract: A method of manufacturing a semiconductor device, includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing (a) supplying a precursor containing a first element to the substrate, (b) supplying a plasma-excited nitrogen gas to the substrate after the act (a), (c) supplying a reactant containing a second element to the substrate after the act (b), and (d) supplying a plasma-excited nitrogen gas to the substrate after the act (c). A gas purge of a space where the substrate is located and vacuumization of the space without gas supply are not performed between the act (a) and the act (b) and between the act (c) and the act (d).
    Type: Application
    Filed: March 13, 2017
    Publication date: September 21, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshitomo HASHIMOTO, Yoshiro HIROSE, Tatsuru MATSUOKA
  • Patent number: 9761437
    Abstract: Provided are: forming an oxycarbonitride film, an oxycarbide film or an oxide film on a substrate by alternately performing a specific number of times: forming a first layer containing the specific element, nitrogen and carbon, on the substrate, by alternately performing a specific number of times, supplying a first source containing the specific element and a halogen-group to the substrate in a processing chamber, and supplying a second source containing the specific element and an amino-group to the substrate in the processing chamber; and forming a second layer by oxidizing the first layer by supplying an oxygen-containing gas, and an oxygen-containing gas and a hydrogen-containing gas to the substrate in the processing chamber.
    Type: Grant
    Filed: July 20, 2015
    Date of Patent: September 12, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yosuke Ota, Yoshiro Hirose
  • Patent number: 9741556
    Abstract: Technique includes forming a film containing first element, second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing forming a first solid layer having thickness of more than one atomic layer and equal to or less than several atomic layers and containing chemical bonds of the first element and carbon by supplying a precursor having the chemical bonds to the substrate under a condition where the precursor is pyrolyzed and at least some of the chemical bonds contained in the precursor are maintained without being broken, and forming a second solid layer by plasma-exciting a reactant containing the second element and supplying the plasma-excited reactant to the substrate, or by plasma-exciting an inert gas and supplying the plasma-excited inert gas and a reactant containing the second element which is not plasma-excited to the substrate.
    Type: Grant
    Filed: June 2, 2015
    Date of Patent: August 22, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC, INC.
    Inventors: Ryuji Yamamoto, Yoshiro Hirose, Satoshi Shimamoto
  • Patent number: 9741555
    Abstract: A method of manufacturing a semiconductor device, includes: supplying a first precursor and a first nitriding agent onto a substrate having a surface formed thereon with an oxygen-containing film in order to form an initial film on the oxygen-containing film; modifying the initial film into a first nitride film by nitriding the initial film with plasma; and supplying a second precursor and a second nitriding agent onto the substrate in order to form a second nitride film on the first nitride film.
    Type: Grant
    Filed: January 13, 2016
    Date of Patent: August 22, 2017
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Yoshitomo Hashimoto, Yoshiro Hirose, Tatsuru Matsuoka, Katsuyoshi Harada
  • Patent number: 9735006
    Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes forming a thin film containing a predetermined element, boron, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes forming a first layer containing boron and a halogen group by supplying a first precursor gas containing boron and the halogen group to the substrate; and forming a second layer containing the predetermined element, boron, carbon, and nitrogen by supplying a second precursor gas containing the predetermined element and an amino group to the substrate and modifying the first layer.
    Type: Grant
    Filed: July 6, 2015
    Date of Patent: August 15, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Atsushi Sano, Yoshiro Hirose
  • Patent number: 9732426
    Abstract: According to the present disclosure, a film containing carbon added at a high concentration is formed with high controllability. A method of manufacturing a semiconductor device includes forming a film containing silicon, carbon and a predetermined element on a substrate by performing a cycle a predetermined number of times. The predetermined element is one of nitrogen and oxygen. The cycle includes supplying a precursor gas containing at least two silicon atoms per one molecule, carbon and a halogen element and having an Si—C bonding to the substrate, and supplying a modifying gas containing the predetermined element to the substrate.
    Type: Grant
    Filed: August 6, 2014
    Date of Patent: August 15, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Satoshi Shimamoto, Yoshiro Hirose, Atsushi Sano
  • Publication number: 20170221698
    Abstract: A semiconductor device manufacturing method includes forming a film having a desired composition on a substrate by selectively performing at least one of: performing, n1 times, a cycle including processes of sequentially supplying a first precursor gas, a nitriding gas and an oxidizing gas to the substrate; performing, n2 times, a cycle including processes of sequentially supplying the first precursor gas, the oxidizing gas and the nitriding gas to the substrate; performing, n3 times, a cycle including processes of sequentially supplying a second precursor gas containing a chemical bond of a predetermined element and carbon, which is more than that contained in the first precursor gas, the nitriding gas and the oxidizing gas to the substrate; and performing, n4 times, a cycle including processes of sequentially supplying the second precursor gas, the oxidizing gas and the nitriding gas to the substrate.
    Type: Application
    Filed: January 31, 2017
    Publication date: August 3, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshitomo HASHIMOTO, Yoshiro HIROSE
  • Patent number: 9711348
    Abstract: The present invention increases controllability of a composition ratio of a multi-element film that contains a predetermined element and at least one element selected from the group consisting of boron, oxygen, carbon and nitrogen. There is provided a method of manufacturing a semiconductor device, including: forming a laminated film where a first film and a second film are laminated on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) forming the first film being free of borazine ring structure and including a predetermined element and at least one element selected from the group consisting of oxygen, carbon and nitrogen; and (b) forming the second film having a borazine ring structure and including at least boron and nitrogen.
    Type: Grant
    Filed: September 21, 2015
    Date of Patent: July 18, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Atsushi Sano, Yoshiro Hirose
  • Publication number: 20170200599
    Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.
    Type: Application
    Filed: March 24, 2017
    Publication date: July 13, 2017
    Inventors: Yushin TAKASAWA, Hajime KARASAWA, Yoshiro HIROSE
  • Patent number: 9704703
    Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes forming a film containing a predetermined element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a first process gas containing the predetermined element and a halogen element to the substrate; supplying a second process gas containing carbon and nitrogen to the substrate; supplying a third process gas containing carbon to the substrate; and supplying a fourth process gas to the substrate, the fourth process gas being different from each of the first to the third process gases.
    Type: Grant
    Filed: February 24, 2014
    Date of Patent: July 11, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshitomo Hashimoto, Yoshiro Hirose, Atsushi Sano
  • Patent number: 9698007
    Abstract: A method of manufacturing a semiconductor device, includes forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate.
    Type: Grant
    Filed: July 23, 2015
    Date of Patent: July 4, 2017
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Takaaki Noda, Satoshi Shimamoto, Shingo Nohara, Yoshiro Hirose, Kiyohiko Maeda
  • Patent number: 9691606
    Abstract: There is provided a method of manufacturing a semiconductor device, including pre-treating a surface of an insulating film formed on a substrate by supplying a precursor containing a first element and a halogen element to the substrate; and forming a film containing the first element and a second element on the pre-treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle including supplying the precursor to the substrate; and supplying a reactant containing the second element to the substrate, wherein the act of supplying the precursor and the act of supplying the reactant are performed non-simultaneously.
    Type: Grant
    Filed: July 8, 2015
    Date of Patent: June 27, 2017
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Yoshitomo Hashimoto, Yoshiro Hirose, Katsuyoshi Harada, Yoshinobu Nakamura, Ryota Sasajima
  • Publication number: 20170178902
    Abstract: A method of manufacturing a semiconductor device includes: providing a substrate having an oxide film; performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate, supplying a carbon-containing gas to the substrate, and supplying a nitrogen-containing gas to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate and supplying a gas containing carbon and nitrogen to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas containing carbon to the substrate and supplying a nitrogen-containing gas to the substrate, the oxide film being used as an oxygen source to form a nitride layer containing oxygen and carbon as a seed layer; and forming a nitride film containing no oxygen and carbon as a first film on the seed layer.
    Type: Application
    Filed: March 8, 2017
    Publication date: June 22, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshitomo HASHIMOTO, Yoshiro HIROSE, Shingo NOHARA, Ryota SASAJIMA, Katsuyoshi HARADA, Yuji URANO