Patents by Inventor Yoshiro Nomoto

Yoshiro Nomoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210249842
    Abstract: A light emission device of one embodiment reduces zero-order light included in output of an S-iPM laser. The light emission device includes a light emission unit and a phase modulation layer. The phase modulation layer has a base layer and modified refractive index regions each including modified refractive index elements. In each unit constituent region centered on a lattice point of an imaginary square lattice set on the phase modulation layer, the distance from the corresponding lattice point to each of the centers of gravity of the modified refractive index elements is greater than 0.30 times and is not greater than 0.50 times of the lattice spacing. In addition, the distance from the corresponding lattice point to the center of gravity of the modified refractive index elements as a whole is greater than 0 and is not greater than 0.30 times of the lattice spacing.
    Type: Application
    Filed: June 4, 2019
    Publication date: August 12, 2021
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi HIROSE, Takahiro SUGIYAMA, Yuu TAKIGUCHI, Yoshiro NOMOTO, Soh UENOYAMA
  • Patent number: 11088511
    Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0<r?0.3a.
    Type: Grant
    Filed: June 25, 2019
    Date of Patent: August 10, 2021
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshitaka Kurosaka, Yuu Takiguchi, Takahiro Sugiyama, Kazuyoshi Hirose, Yoshiro Nomoto
  • Patent number: 11031747
    Abstract: The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.
    Type: Grant
    Filed: August 10, 2017
    Date of Patent: June 8, 2021
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshitaka Kurosaka, Kazuyoshi Hirose, Takahiro Sugiyama, Yuu Takiguchi, Yoshiro Nomoto
  • Patent number: 11031751
    Abstract: The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.
    Type: Grant
    Filed: June 7, 2019
    Date of Patent: June 8, 2021
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshitaka Kurosaka, Kazuyoshi Hirose, Takahiro Sugiyama, Yuu Takiguchi, Yoshiro Nomoto
  • Patent number: 10734786
    Abstract: The present embodiment relates to a semiconductor light emitting element having a structure that enables removal of zero-order light from output light of an S-iPM laser. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a base layer and a plurality of modified refractive index regions each of which is individually arranged at a specific position. One of the pair of cladding layers includes a distributed Bragg reflector layer which has a transmission characteristic with respect to a specific optical image outputted along an inclined direction with respect to a light emission surface and has a reflection characteristic with respect to the zero-order light outputted along a normal direction of the light emission surface.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: August 4, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi Hirose, Yoshitaka Kurosaka, Takahiro Sugiyama, Yuu Takiguchi, Yoshiro Nomoto
  • Publication number: 20200209653
    Abstract: The present embodiment relates to a light-emitting device that enables reduction in attenuation or diffraction effect caused by a semiconductor light-emitting device with respect to modulated light outputted from a spatial light modulator, and the light-emitting device includes the semiconductor light-emitting device that outputs light from a light output surface and the reflection type spatial light modulator that modulates the light. The spatial light modulator includes a light input/output surface having the area larger than the area of a light input surface of the semiconductor light-emitting device, modulates light taken through a region facing the light output surface of the semiconductor light-emitting device in the light input/output surface, and outputs the modulated light from another region of the light input/output surface to a space other than the light input surface of the semiconductor light-emitting device.
    Type: Application
    Filed: June 13, 2018
    Publication date: July 2, 2020
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Yuu TAKIGUCHI, Kazuyoshi HIROSE, Yoshitaka KUROSAKA, Takahiro SUGIYAMA, Yoshiro NOMOTO, Soh UENOYAMA
  • Patent number: 10700495
    Abstract: The present embodiment relates to a semiconductor light emitting element having a structure that enables removal of zero-order light from output light of an S-iPM laser. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a base layer and a plurality of modified refractive index regions each of which is individually arranged at a specific position. One of the pair of cladding layers includes a distributed Bragg reflector layer which has a transmission characteristic with respect to a specific optical image outputted along an inclined direction with respect to a light emission surface and has a reflection characteristic with respect to the zero-order light outputted along a normal direction of the light emission surface.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: June 30, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi Hirose, Yoshitaka Kurosaka, Takahiro Sugiyama, Yuu Takiguchi, Yoshiro Nomoto
  • Patent number: 10613253
    Abstract: A metasurface is capable of modulating input light including a wavelength in a range of 880 nm to 40 ?m. The metasurface includes: a GaAs substrate including a light input surface into which input light is input and a light output surface facing the light input surface; an interlayer having a lower refractive index than GaAs and disposed on the light output surface side of the GaAs substrate; and a plurality of V-shaped antenna elements disposed on a side of the interlayer which is opposite to the GaAs substrate side and including a first arm and a second arm continuous with one end of the first arm.
    Type: Grant
    Filed: September 12, 2017
    Date of Patent: April 7, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshiro Nomoto, Yoshitaka Kurosaka, Kazuyoshi Hirose, Takahiro Sugiyama, Soh Uenoyama
  • Publication number: 20200106240
    Abstract: The present embodiment relates to a semiconductor light-emitting element or the like including a structure for suppressing deterioration in the quality of an optical image caused by an electrode blocking a part of light outputted from a phase modulation layer. The semiconductor light-emitting element includes a phase modulation layer having a basic layer and a plurality of modified refractive index regions, and the phase modulation layer includes a first region at least partially overlapping the electrode along a lamination direction and a second region other than the first region. Among the plurality of modified refractive index regions, only one or more modified refractive index regions in the second region are disposed so as to contribute to formation of an optical image.
    Type: Application
    Filed: December 2, 2019
    Publication date: April 2, 2020
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Yuu TAKIGUCHI, Kazuyoshi HIROSE, Yoshitaka KUROSAKA, Takahiro SUGIYAMA, Yoshiro NOMOTO, Soh UENOYAMA
  • Publication number: 20190356113
    Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0<r?0.3a.
    Type: Application
    Filed: June 25, 2019
    Publication date: November 21, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshitaka KUROSAKA, Yuu Takiguchi, Takahiro Sugiyama, Kazuyoshi Hirose, Yoshiro Nomoto
  • Publication number: 20190312410
    Abstract: A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.
    Type: Application
    Filed: June 5, 2019
    Publication date: October 10, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Takahiro SUGIYAMA, Yuu TAKIGUCHI, Yoshitaka KUROSAKA, Kazuyoshi HIROSE, Yoshiro NOMOTO, Soh UENOYAMA
  • Publication number: 20190312412
    Abstract: The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.
    Type: Application
    Filed: June 7, 2019
    Publication date: October 10, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshitaka KUROSAKA, Kazuyoshi HIROSE, Takahiro SUGIYAMA, Yuu TAKIGUCHI, Yoshiro NOMOTO
  • Publication number: 20190288483
    Abstract: The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.
    Type: Application
    Filed: June 6, 2019
    Publication date: September 19, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Takahiro SUGIYAMA, Yuu TAKIGUCHI, Yoshitaka KUROSAKA, Kazuyoshi HIROSE, Yoshiro NOMOTO, Soh UENOYAMA
  • Patent number: 10389088
    Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0<r?0.3a.
    Type: Grant
    Filed: March 11, 2016
    Date of Patent: August 20, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshitaka Kurosaka, Yuu Takiguchi, Takahiro Sugiyama, Kazuyoshi Hirose, Yoshiro Nomoto
  • Publication number: 20190252856
    Abstract: The present embodiment relates to a semiconductor light emitting element having a structure that enables removal of zero-order light from output light of an S-iPM laser. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a base layer and a plurality of modified refractive index regions each of which is individually arranged at a specific position. One of the pair of cladding layers includes a distributed Bragg reflector layer which has a transmission characteristic with respect to a specific optical image outputted along an inclined direction with respect to a light emission surface and has a reflection characteristic with respect to the zero-order light outputted along a normal direction of the light emission surface.
    Type: Application
    Filed: March 5, 2019
    Publication date: August 15, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi HIROSE, Yoshitaka KUROSAKA, Takahiro SUGIYAMA, Yuu TAKIGUCHI, Yoshiro NOMOTO
  • Publication number: 20190181613
    Abstract: The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.
    Type: Application
    Filed: August 10, 2017
    Publication date: June 13, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshitaka KUROSAKA, Kazuyoshi HIROSE, Takahiro SUGIYAMA, Yuu TAKIGUCHI, Yoshiro NOMOTO
  • Patent number: 10161857
    Abstract: A metamaterial optical member 100 includes a light collecting optical member 1 having a light-entering surface IN1 and a light-exiting surface OUT1 and having a light collecting function and an antireflection film 2 disposed in the light-exiting surface OUT1 of the light collecting optical member 1. The antireflection film 2 has a first metamaterial structure in which a refractive index is gradually reduced in the light travelling direction. The metamaterial optical member 100 includes the antireflection film 2 having the metamaterial structure, thereby externally extracting light.
    Type: Grant
    Filed: April 3, 2015
    Date of Patent: December 25, 2018
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventor: Yoshiro Nomoto
  • Patent number: 10090636
    Abstract: Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer 4 interposed therebetween, and a diffractive lattice layer 6 that is optically coupled to the active layer 4. The semiconductor laser device includes a ΒΌ wavelength plate 26 that is disposed between a group of the active layers 4 of the plurality of semiconductor laser units LDC and a reflection film 23, and a polarizing plate 27 that is disposed between the group of the active layers 4 of the plurality of semiconductor laser units LDC and a light emitting surface.
    Type: Grant
    Filed: January 7, 2016
    Date of Patent: October 2, 2018
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Yuu Takiguchi, Kazuyoshi Hirose, Yoshiro Nomoto, Takahiro Sugiyama, Yoshitaka Kurosaka
  • Patent number: 9991669
    Abstract: The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image.
    Type: Grant
    Filed: July 21, 2017
    Date of Patent: June 5, 2018
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi Hirose, Yoshitaka Kurosaka, Takahiro Sugiyama, Yuu Takiguchi, Yoshiro Nomoto
  • Publication number: 20180109075
    Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0<r?0.3a.
    Type: Application
    Filed: March 11, 2016
    Publication date: April 19, 2018
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshitaka KUROSAKA, Yuu TAKIGUCHI, Takahiro SUGIYAMA, Kazuyoshi HIROSE, Yoshiro NOMOTO