Patents by Inventor Yoshishige OKUNO

Yoshishige OKUNO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200010619
    Abstract: A fluorine-containing ether compound of the present invention is represented by the following General Formula (1). (In the General Formula (1), X is a trivalent atom or a trivalent atom group, A is a linking group including at least one polar group, B is a linking group having a perfluoropolyether chain, and D is a polar group or a substituent having a polar group at the end.) [Chem.
    Type: Application
    Filed: February 6, 2018
    Publication date: January 9, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Takuya MINAMI, Yoshishige OKUNO, Yuta YAMAGUCHI, Ryuuta MIYASAKA, Naoya FUKUMOTO, Hiroko HATTORI, Hiroyuki TOMITA, Michio SERI, Naoko ITO, Ichiro OTA, Katsumi MUROFUSHI
  • Publication number: 20190386321
    Abstract: The present invention relates to an oxygen reduction catalyst, an electrode, a membrane electrode assembly, and a fuel cell, and the oxygen reduction catalyst is an oxygen reduction catalyst containing substituted CoS2, in which the substituted CoS2 has a cubic crystal structure, the oxygen reduction catalyst contains the substituted CoS2 within 0.83 nm from the surface thereof, and the substituted CoS2 has at least one substitutional atom selected from the group consisting of Cr, Mo, Mn, Tc, Re, Rh, Cu, and Ag in some of Co atom sites.
    Type: Application
    Filed: December 27, 2017
    Publication date: December 19, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Suguru SAKAGUCHI, Yoshishige OKUNO, Takuya IMAI, Kunchan LEE
  • Publication number: 20190330761
    Abstract: A SiC single crystal growth apparatus of an embodiment includes a seed crystal installation part in which a seed crystal is installable at a position thereof which faces a raw material; a guide member which extends from a periphery of the seed crystal installation part toward the raw material and guides crystal growth performed inside the guide member; and a heat-insulating material which is movable along an extension direction of the guide member on the outside of the guide member.
    Type: Application
    Filed: April 19, 2019
    Publication date: October 31, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Rimpei KINDAICHI, Yoshishige OKUNO, Tomohiro SHONAI
  • Publication number: 20190194822
    Abstract: A SiC ingot includes a core portion; and a surface layer that is formed on a plane of the core portion in a growing direction, and a coefficient of linear thermal expansion of the surface layer is smaller than a coefficient of linear thermal expansion of the core portion.
    Type: Application
    Filed: December 18, 2018
    Publication date: June 27, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Rimpei KINDAICHI, Yohei Fujikawa, Yoshishige Okuno
  • Publication number: 20190161885
    Abstract: A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor; and an annular radiation member which is in contact with a back surface of the susceptor opposite to the mounting surface and is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view, in which the radiation member has a higher emissivity than that of the susceptor and has an exposed portion as viewed from the heater.
    Type: Application
    Filed: November 20, 2018
    Publication date: May 30, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Yasunori MOTOYAMA, Yoshishige OKUNO, Yoshikazu UMETA, Keisuke FUKADA
  • Publication number: 20190161886
    Abstract: A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; and a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor, in which an unevenness is formed on a radiation-receiving surface of the susceptor, which faces a first surface of the heater provided at the susceptor side, and the unevenness is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view.
    Type: Application
    Filed: November 20, 2018
    Publication date: May 30, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Yasunori MOTOYAMA, Yoshishige OKUNO, Yoshikazu UMETA, Keisuke FUKADA