Abstract: A substrate processing control method in a substrate processing apparatus, includes: acquiring a data set for each substrate sequentially subjected to first and second processes at first and second levels, the data set including information specifying the first level at which the first process has been performed, information specifying the second level at which the second process has been performed and information about a characteristic amount relating to characteristics of the substrate; calculating information including an expected value of the characteristic amount, and level deviations of the first and second levels to the expected value based on the data set, and correcting the first parameter at the first level or the second parameter at the second level based on the calculated information.

Abstract: An electric compressor includes: a compression part; an electric motor; an inverter; a housing including a plurality of housing forming members made of metal; a seal member that has an insulation property and is provided between the housing forming members adjacent to each other; and a potential equalization member that is made of metal and is in contact with both the adjacent housing forming members to equalize potentials of the adjacent housing forming members. The adjacent housing forming members include mating surfaces, respectively. An insertion hole is formed in one of the mating surfaces of the adjacent housing forming members, at a position in which the seal member is not provided. The potential equalization member includes an insertion portion inserted into the insertion hole, and a contact portion that is a plate portion extending in a gap between the mating surfaces and is in contact with both the mating surfaces.

Abstract: A substrate processing control method in a substrate processing apparatus, includes: acquiring a data set for each substrate sequentially subjected to first and second processes at first and second levels, the data set including information specifying the first level at which the first process has been performed, information specifying the second level at which the second process has been performed and information about a characteristic amount relating to characteristics of the substrate; calculating information including an expected value of the characteristic amount, and level deviations of the first and second levels to the expected value based on the data set; and correcting the first parameter at the first level or the second parameter at the second level based on the calculated information.

Abstract: A door weather strip having a fin portion provided to a corner portion in a rear portion of a door of a motor vehicle is provided. The fin portion is formed by molding and mounted so as to cover the inside of the motor vehicle in the corner portion. On the mounting surface side of the fin portion of the door weather strip, a drainage lip is provided. The drainage lip protrudes from the mounting surface to the outside of the vehicle and extends in a linear shape or an upward protruding arc shape from the front to the rear of the motor vehicle and further downward. The drainage lip does not come into contact with a rear end rib formed on the fin portion at a rear end of the motor vehicle, and a drainage recess is formed between the rear end rib and a door frame.

Abstract: A substrate processing control method in a substrate processing apparatus, includes: acquiring a data set for each substrate sequentially subjected to first and second processes at first and second levels, the data set including information specifying the first level at which the first process has been performed, information specifying the second level at which the second process has been performed and information about a characteristic amount relating to characteristics of the substrate; calculating information including an expected value of the characteristic amount, and level deviations of the first and second levels to the expected value based on the data set; and correcting the first parameter at the first level or the second parameter at the second level based on the calculated information.

Abstract: There is provided a substrate processing apparatus including: a light radiator configured to radiate a light for processing into an irradiation area which is smaller than a processing target area of a surface of a substrate; a driver configured to move the irradiation area in two directions that cross each other in a plane along the surface of the substrate; and a controller configured to control the driver to move an irradiation position in two directions according to a movement pattern which has been set to radiate the light to an entire area of the processing target area.

Abstract: There is provided a substrate processing apparatus including: a light radiator configured to radiate a light for processing into an irradiation area which is smaller than a processing target area of a surface of a substrate; a driver configured to move the irradiation area in two directions that cross each other in a plane along the surface of the substrate; and a controller configured to control the driver to move an irradiation position in two directions according to a movement pattern which has been set to radiate the light to an entire area of the processing target area.

Abstract: A clean-room monitoring device for monitoring the interior of a clean-room having a floor in which a removable cover such as a grating or a non-porous cover is disposed, includes: a monitoring camera which captures an image of the removable cover; a monitor which detects the existence of an opening exposed when the removable cover is removed, based on an image signal obtained from the monitoring camera, detects the presence of a workman approaching the opening if it is detected that the opening exists, and outputs a warning signal if the workman is detected; and a warning generator which receives the warning signal from monitor and issues a warning.

Abstract: A clean-room monitoring device for monitoring the interior of a clean-room having a floor in which a removable cover such as a grating or a non-porous cover is disposed, includes: a monitoring camera which captures an image of the removable cover; a monitor which detects the existence of an opening exposed when the removable cover is removed, based on an image signal obtained from the monitoring camera, detects the presence of a workman approaching the opening if it is detected that the opening exists, and outputs a warning signal if the workman is detected; and a warning generator which receives the warning signal from monitor and issues a warning.

Abstract: A temperature setting method of the present invention includes the steps of: measuring states of an etching pattern within the substrate for a substrate for which a series of photolithography processing including thermal processing and an etching treatment thereafter have been finished; calculating temperature correction values for regions of a thermal processing plate from measurement result of the states of the etching pattern within the substrate using a function between correction amounts for the states of the etching pattern and the temperature correction values for the thermal processing plate; and setting the temperature for each of the regions of the thermal processing plate by each of the calculated temperature correction values.

Abstract: In the present invention, the line widths within a substrate of an etching pattern are measured for a substrate for which photolithography processing and an etching treatment thereafter have been finished. The line width measurement results are converted into the line widths of a resist pattern using relational expressions which have been obtained in advance. From the converted line widths of the resist pattern, coefficients of a polynomial function indicating variations within the substrate are calculated. Next, a function between line width correction amounts for the resist pattern and temperature correction values is used to calculate temperature correction values for the regions of the thermal plate to bring the coefficients of the polynomial function close to zero. Based on each of the calculated temperature correction values, the temperature for each of the regions is set.

Abstract: In the present invention, a thermal plate of a PEB unit is divided into a plurality of thermal plate regions, and a temperature is settable for each of the thermal plate regions. A temperature correction value for adjusting the temperature within the thermal plate is settable for each of the thermal plate regions of the thermal plate. The line widths within the substrate which has been subjected to the photolithography process are measured, and an improvement in-plane tendency Za improved by change of the temperature settings is subtracted from an in-plane tendency Z of the measured line widths within the substrate to calculate an in-plane tendency Zb of the line widths within the substrate after change of temperature settings. The improvement in-plane tendency Za is calculated using the following expression. Za=?1×?×MT (?: a resist heat sensitivity, M: a calculation model, and T: temperature correction values for thermal plate regions).

Abstract: In the present invention, the line widths within a substrate of an etching pattern are measured for a substrate for which photolithography processing and an etching treatment thereafter have been finished. The line width measurement results are converted into the line widths of a resist pattern using relational expressions which have been obtained in advance. From the converted line widths of the resist pattern, coefficients of a polynomial function indicating variations within the substrate are calculated. Next, a function between line width correction amounts for the resist pattern and temperature correction values is used to calculate temperature correction values for the regions of the thermal plate to bring the coefficients of the polynomial function close to zero. Based on each of the calculated temperature correction values, the temperature for each of the regions is set.

Abstract: A temperature setting method of the present invention includes the steps of: measuring states of an etching pattern within the substrate for a substrate for which a series of photolithography processing including thermal processing and an etching treatment thereafter have been finished; calculating temperature correction values for regions of a thermal processing plate from measurement result of the states of the etching pattern within the substrate using a function between correction amounts for the states of the etching pattern and the temperature correction values for the thermal processing plate; and setting the temperature for each of the regions of the thermal processing plate by each of the calculated temperature correction values.

Abstract: In the present invention, a thermal plate of a PEB unit is divided into a plurality of thermal plate regions, and a temperature is settable for each of the thermal plate regions. A temperature correction value for adjusting the temperature within the thermal plate is settable for each of the thermal plate regions of the thermal plate. The line widths within the substrate which has been subjected to the photolithography process are measured, and an improvement in-plane tendency Za improved by change of the temperature settings is subtracted from an in-plane tendency Z of the measured line widths within the substrate to calculate an in-plane tendency Zb of the line widths within the substrate after change of temperature settings. The improvement in-plane tendency Za is calculated using the following expression.

Abstract: A powder coating is provided which does not require a long complicated production process, can be produced easily and with no danger of gelling occurring during production, and which forms a paint film with superior smoothness and with no film defects such as bubbles or pinholes. A powder coating raw materials solution comprising as essential constituents a room temperature solid main constituent resin (A) with a curable reactive group, a room temperature solid curing agent (B) which reacts with the curable reactive group of the main constituent resin (A), and an organic solvent (C), is spray dried at a temperature at which the main constituent resin (A) and the curing agent (B) undergo no substantial curing reaction.

Abstract: A powder coating is provided which does not require a long complicated production process, can be produced easily and with no danger of gelling occurring during production, and which forms a paint film with superior smoothness and with no film defects such as bubbles or pinholes. A powder coating raw materials solution comprising as essential constituents a room temperature solid main constituent resin (A) with a curable reactive group, a room temperature solid curing agent (B) which reacts with the curable reactive group of the main constituent resin (A), and an organic solvent (C), is spray dried at a temperature at which the main constituent resin (A) and the curing agent (B) undergo no substantial curing reaction.

Abstract: The compounds of the formula: ##STR1## wherein Y is bond or alkylene;Z is bond, alkylene or vinylene;E is(i) 4-15 membered, unsaturated, partially saturated or fully saturated, mono or bicyclic hetero ring containing as hetero atoms, one or two nitrogen atoms, one or two oxygen atoms or one sulfur atom,(ii) 4-15 membered, unsaturated or partially saturated, mono or bicyclic carbocyclic ring, or(iii) --OR.sup.4 (in which R.sup.4 is hydrogen atom, alkyl or alkyl substituted by a hydroxy group);Cyc is benzene, pyridine or imidazole;R.sup.1 is hydrogen or alkyl;R.sup.2 is hydrogen, alkyl, alkoxy or halogen atom;R.sup.3 is hydrogen, alkyl, alkoxy or --COOR.sup.5 (in which R.sup.5 is hydrogen or alkyl);with the proviso that(1) a Cyc ring should not bond to Z through a nitrogen atom in the Cyc ring when Z is vinylene and that(2) Y is not a single bond, when E is --OR.sup.

Abstract: The compounds of the formula: ##STR1## wherein ring ##STR2## is a hetero ring containing nitrogen atom, optionally selected from ##STR3## n is 0-2; Y is bond or alkylene;Z is bond, alkylene or vinylene;E is(i) 4-15 membered, unsaturated, partially saturated or fully saturated, mono or bicyclic hetero ring containing as hetero atoms, 1 or 2 N atoms, 1 or 2 O atoms or 1 S atom,(ii) 4-15 membered, unsaturated or partially saturated, mono or bicyclic carbocyclic ring, or(iii) --OR.sup.4 (in which R.sup.4 is hydrogen atom, alkyl or alkyl substituted by a hydroxy group);Cyc is 5-7 membered, unsaturated, partially saturated or fully saturated, monocyclic hetero ring containing as hetero atoms, 1 or 2 N atoms or 5-7 membered, unsaturated or partially saturated, monocyclic carbocyclic ring;R.sup.1 is H or alkyl;R.sup.2 is H, alkyl, alkoxy or halogen atom;R.sup.3 is H, alkyl, alkoxy or --COOR.sup.5 (in which R.sup.

Abstract: The compounds of the formula: ##STR1## wherein ring ##STR2## is a hetero ring containing nitrogen atom, optionally selected from ##STR3## n is 0-2; Y is bond or alkylene;Z is bond, alkylene or vinylene;E is(i) 4-15 membered, unsaturated, partially saturated or fully saturated, mono or bicyclic hetero ring containing as hetero atoms, 1 or 2 N atoms, 1 or 2 O atoms or 1 S atom,(ii) 4-15 membered, unsaturated or partially saturated, mono or bicyclic carbocyclic ring, or(iii) --OR.sup.4 (in which R.sup.4 is hydrogen atom, alkyl or alkyl substituted by a hydroxy group);Cyc is 5-7 membered, unsaturated, partially saturated or fully saturated, monocyclic hetero ring containing as hetero atoms, 1 or 2 N atoms or 5-7 membered, unsaturated or partially saturated, monocyclic carbocyclic ring;R.sup.1 is H or alkyl;R.sup.2 is H, alkyl, alkoxy or halogen atom;R.sup.3 is H, alkyl, alkoxy or --COOR.sup.5 (in which R.sup.