Patents by Inventor Yoshitaka Kurosaka

Yoshitaka Kurosaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210273411
    Abstract: The present embodiment relates to a light-emitting device comprising a reflective metasurface modulating a phase for each of pixels constituting a one- or two-dimensional array. The light-emitting device comprises a surface emitting laser element, a light guide layer, and the metasurface. The metasurface has a light transmissive layer including a dielectric layer, one metal film on one surface thereof, and the other metal film on the other surface thereof. In each of unit regions corresponding to the pixels, the light transmissive layer includes a portion exposed without being covered with the metal film. The width of each unit region and the thickness of the light transmissive layer are smaller than the wavelength of the laser light to the metasurface. The metasurface modulates the phase of the laser light for each unit region. A first light output surface outputs the modulated laser.
    Type: Application
    Filed: May 14, 2019
    Publication date: September 2, 2021
    Applicant: Hamamatsu Photonics K.K.
    Inventors: Soh UENOYAMA, Kazuyoshi HIROSE, Yoshitaka KUROSAKA, Hiroshi TANAKA
  • Patent number: 11088511
    Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0<r?0.3a.
    Type: Grant
    Filed: June 25, 2019
    Date of Patent: August 10, 2021
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshitaka Kurosaka, Yuu Takiguchi, Takahiro Sugiyama, Kazuyoshi Hirose, Yoshiro Nomoto
  • Publication number: 20210240052
    Abstract: A reflective dynamic metasurface of an embodiment comprises a structure enabling phase modulation in each of pixels constituting at least a one-dimensional array. The metasurface includes: a laminated structure body having a transparent conductive layer and a dielectric layer; a first metal film on one surface of the laminated structure body; a second metal film on the other surface of the laminated structure body; and a drive circuit controlling voltage applied between the first and second metal films. The first and second metal films are arranged to sandwich the pixels. The first metal film is arranged to expose a pair of window regions in one pixel, and the second metal film includes partial metal films defining the shape of each pixel and separated from each other. The drive circuit individually controls the potential of each partial metal film, thereby modulating the phase of the input light for each pixel.
    Type: Application
    Filed: May 14, 2019
    Publication date: August 5, 2021
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Soh UENOYAMA, Kazuyoshi HIROSE, Yoshitaka KUROSAKA, Hiroshi TANAKA
  • Publication number: 20210226412
    Abstract: The present embodiment relates to a light emission device capable of removing zero-order light from output light of an S-iPM laser. The light emission device comprises an active layer and a phase modulation layer. The phase modulation layer includes a base layer and a plurality of modified refractive index regions. In a state in which a virtual square lattice is set on the phase modulation layer, a center of gravity of each modified refractive index region is separated from a corresponding lattice point, and a rotation angle around each lattice point that decides a position of the center of gravity of each modified refractive index region is set according to a phase distribution for forming an optical image. A lattice spacing and an emission wavelength satisfy a condition of M-point oscillation in a reciprocal lattice space of the phase modulation layer.
    Type: Application
    Filed: August 27, 2019
    Publication date: July 22, 2021
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi HIROSE, Yuu TAKIGUCHI, Takahiro SUGIYAMA, Yoshitaka KUROSAKA
  • Patent number: 11031751
    Abstract: The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.
    Type: Grant
    Filed: June 7, 2019
    Date of Patent: June 8, 2021
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshitaka Kurosaka, Kazuyoshi Hirose, Takahiro Sugiyama, Yuu Takiguchi, Yoshiro Nomoto
  • Patent number: 11031747
    Abstract: The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.
    Type: Grant
    Filed: August 10, 2017
    Date of Patent: June 8, 2021
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshitaka Kurosaka, Kazuyoshi Hirose, Takahiro Sugiyama, Yuu Takiguchi, Yoshiro Nomoto
  • Publication number: 20200373739
    Abstract: The embodiment relates to a light-emitting device in which a positional relationship between a modified refractive index region's gravity-center position and the associated lattice point differs from a conventional device, and a production method. In this device, a stacked body including a light-emitting portion and a phase modulation layer optically coupled to the light-emitting portion is on a substrate. The phase modulation layer includes a base layer and plural modified refractive index regions in the base layer. Each modified refractive index region's gravity-center position locates on a virtual straight line passing through a corresponding reference lattice point among lattice points of a virtual square lattice on the base layer's design plane. A distance between the reference lattice point and the modified refractive index region's gravity center along the virtual straight line is individually set such that this device outputs light forming an optical image.
    Type: Application
    Filed: November 28, 2018
    Publication date: November 26, 2020
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi HIROSE, Yoshitaka KUROSAKA, Yuu TAKIGUCHI, Takahiro SUGIYAMA
  • Publication number: 20200373740
    Abstract: The present embodiment relates to a light-emitting device or the like having a structure capable of reducing one power of ±1st-order light with respect to the other power. The light-emitting device includes a substrate, a light-emitting portion, and a phase modulation layer including a base layer and a plurality of modified refractive index regions. Each of the plurality of modified refractive index regions has a three-dimensional shape defined by a first surface facing the substrate, a second surface positioned on a side opposite to the substrate with respect to the first surface, and a side surface. In the three-dimensional shape, at least one of the first surface, the second surface, and the side surface has a portion inclined with respect to a main surface.
    Type: Application
    Filed: November 28, 2018
    Publication date: November 26, 2020
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi HIROSE, Yoshitaka KUROSAKA, Yuu TAKIGUCHI, Takahiro SUGIYAMA
  • Publication number: 20200287350
    Abstract: A semiconductor light emitting element that can form a useful beam pattern is provided. A semiconductor laser element LD includes an active layer 4, a pair of cladding layers 2 and 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4. The phase modulation layer 6 includes a base layer 6A and different refractive index regions 6B that are different in refractive index from the base layer 6A. The different refractive index regions 6B desirably arranged in the phase modulation layer 6 enable emission of laser light including a dark line with no zero-order light.
    Type: Application
    Filed: October 2, 2018
    Publication date: September 10, 2020
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshitaka KUROSAKA, Kazuyoshi HIROSE, Takahiro SUGIYAMA
  • Patent number: 10734786
    Abstract: The present embodiment relates to a semiconductor light emitting element having a structure that enables removal of zero-order light from output light of an S-iPM laser. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a base layer and a plurality of modified refractive index regions each of which is individually arranged at a specific position. One of the pair of cladding layers includes a distributed Bragg reflector layer which has a transmission characteristic with respect to a specific optical image outputted along an inclined direction with respect to a light emission surface and has a reflection characteristic with respect to the zero-order light outputted along a normal direction of the light emission surface.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: August 4, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi Hirose, Yoshitaka Kurosaka, Takahiro Sugiyama, Yuu Takiguchi, Yoshiro Nomoto
  • Publication number: 20200209653
    Abstract: The present embodiment relates to a light-emitting device that enables reduction in attenuation or diffraction effect caused by a semiconductor light-emitting device with respect to modulated light outputted from a spatial light modulator, and the light-emitting device includes the semiconductor light-emitting device that outputs light from a light output surface and the reflection type spatial light modulator that modulates the light. The spatial light modulator includes a light input/output surface having the area larger than the area of a light input surface of the semiconductor light-emitting device, modulates light taken through a region facing the light output surface of the semiconductor light-emitting device in the light input/output surface, and outputs the modulated light from another region of the light input/output surface to a space other than the light input surface of the semiconductor light-emitting device.
    Type: Application
    Filed: June 13, 2018
    Publication date: July 2, 2020
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Yuu TAKIGUCHI, Kazuyoshi HIROSE, Yoshitaka KUROSAKA, Takahiro SUGIYAMA, Yoshiro NOMOTO, Soh UENOYAMA
  • Patent number: 10700495
    Abstract: The present embodiment relates to a semiconductor light emitting element having a structure that enables removal of zero-order light from output light of an S-iPM laser. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a base layer and a plurality of modified refractive index regions each of which is individually arranged at a specific position. One of the pair of cladding layers includes a distributed Bragg reflector layer which has a transmission characteristic with respect to a specific optical image outputted along an inclined direction with respect to a light emission surface and has a reflection characteristic with respect to the zero-order light outputted along a normal direction of the light emission surface.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: June 30, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi Hirose, Yoshitaka Kurosaka, Takahiro Sugiyama, Yuu Takiguchi, Yoshiro Nomoto
  • Patent number: 10613253
    Abstract: A metasurface is capable of modulating input light including a wavelength in a range of 880 nm to 40 ?m. The metasurface includes: a GaAs substrate including a light input surface into which input light is input and a light output surface facing the light input surface; an interlayer having a lower refractive index than GaAs and disposed on the light output surface side of the GaAs substrate; and a plurality of V-shaped antenna elements disposed on a side of the interlayer which is opposite to the GaAs substrate side and including a first arm and a second arm continuous with one end of the first arm.
    Type: Grant
    Filed: September 12, 2017
    Date of Patent: April 7, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshiro Nomoto, Yoshitaka Kurosaka, Kazuyoshi Hirose, Takahiro Sugiyama, Soh Uenoyama
  • Publication number: 20200106240
    Abstract: The present embodiment relates to a semiconductor light-emitting element or the like including a structure for suppressing deterioration in the quality of an optical image caused by an electrode blocking a part of light outputted from a phase modulation layer. The semiconductor light-emitting element includes a phase modulation layer having a basic layer and a plurality of modified refractive index regions, and the phase modulation layer includes a first region at least partially overlapping the electrode along a lamination direction and a second region other than the first region. Among the plurality of modified refractive index regions, only one or more modified refractive index regions in the second region are disposed so as to contribute to formation of an optical image.
    Type: Application
    Filed: December 2, 2019
    Publication date: April 2, 2020
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Yuu TAKIGUCHI, Kazuyoshi HIROSE, Yoshitaka KUROSAKA, Takahiro SUGIYAMA, Yoshiro NOMOTO, Soh UENOYAMA
  • Publication number: 20190356113
    Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0<r?0.3a.
    Type: Application
    Filed: June 25, 2019
    Publication date: November 21, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshitaka KUROSAKA, Yuu Takiguchi, Takahiro Sugiyama, Kazuyoshi Hirose, Yoshiro Nomoto
  • Publication number: 20190312410
    Abstract: A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.
    Type: Application
    Filed: June 5, 2019
    Publication date: October 10, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Takahiro SUGIYAMA, Yuu TAKIGUCHI, Yoshitaka KUROSAKA, Kazuyoshi HIROSE, Yoshiro NOMOTO, Soh UENOYAMA
  • Publication number: 20190312412
    Abstract: The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.
    Type: Application
    Filed: June 7, 2019
    Publication date: October 10, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshitaka KUROSAKA, Kazuyoshi HIROSE, Takahiro SUGIYAMA, Yuu TAKIGUCHI, Yoshiro NOMOTO
  • Publication number: 20190288483
    Abstract: The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.
    Type: Application
    Filed: June 6, 2019
    Publication date: September 19, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Takahiro SUGIYAMA, Yuu TAKIGUCHI, Yoshitaka KUROSAKA, Kazuyoshi HIROSE, Yoshiro NOMOTO, Soh UENOYAMA
  • Patent number: 10404037
    Abstract: A semiconductor laser device of an embodiment comprises: a first electrode having an opening for passage of laser light and arranged on a main surface of a substrate; and a second electrode arranged on a back surface of the substrate. A stacked structural body including an active layer and a photonic crystal layer is arranged between the substrate and the first electrode, and a current confinement layer having an opening for passage of a current is arranged between the stacked structural body and the first electrode. A maximum width of the opening of the current confinement layer is smaller than a maximum width of the opening of the first electrode, and a whole region defined by the opening of the current confinement layer fits within a region defined by the opening of the first electrode as viewed from the first electrode side toward the second electrode side.
    Type: Grant
    Filed: July 5, 2018
    Date of Patent: September 3, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Akira Higuchi, Yoshitaka Kurosaka, Tadataka Edamura, Masahiro Hitaka
  • Patent number: 10389088
    Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0<r?0.3a.
    Type: Grant
    Filed: March 11, 2016
    Date of Patent: August 20, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshitaka Kurosaka, Yuu Takiguchi, Takahiro Sugiyama, Kazuyoshi Hirose, Yoshiro Nomoto