Abstract: A force sensing element is provided with a gauge portion and a plurality of electrodes. The gauge portion is formed of an n-type semiconductor substrate whose (100)-face serves as a main face, a p-type semiconductor substrate whose (110)-face serves as a main face, or a p-type semiconductor substrate whose (111)-face serves as a main face, and is pressed in a thickness direction of the semiconductor substrate upon receiving a force. The electrodes are electrically connected to the gauge portion such that a current path extending in a direction corresponding to the thickness direction of the semiconductor substrate is formed in the gauge portion. The force sensing element thus constructed makes it possible to detect a force with high precision.

Abstract: Force detection devices may have high detection precision and may prevent current leakage through a strain gage 126 to the outside. For example, a force detection block 120 may include a semiconductor substrate 122, a first insulating layer 124 and a semiconductor layer 126 (strain gage). The strain gage 126 preferably includes a site where resistance changes in accordance with the stress acting thereon. The strain gage 126 preferably constitutes at least a portion of a ridge 130 projects from the surface of the force detection block 120. A force transmission block 138 may be attached to a top surface of the ridge 130. The width of the first insulating layer 124 is preferably greater than the width of the semiconductor layer 126.

Abstract: A pressure sensor has a housing having a first block and a second block provided therein. A force to be measured applies upon a upper face of the first block. An upper face of the second block makes contact with a base face of the first block. Piezoresistive elements are formed within the base face of the first block. The resistance values of these piezoresistive elements change as contacting pressure between the first block and the second block changes. A first electrode is formed on an upper face of the first block. A second electrode is formed on a base face of the second block. Electrical characteristics between the first electrode and the second electrode change following change in the contacting pressure between the first block and the second block.

Abstract: A pressure sensor is realized wherein output error of sensor element can be reduced even in the case where the pressure sensor is utilized in high temperature conditions. A pressure sensor is provided with a housing 20, a diaphragm 24 that partitions the interior and the exterior of the housing 20, a sensor element 54 provided within the housing 20, output value of the sensor element 54 varying in accordance with force exerted thereupon, and a force transmitting rod 52 provided within the housing, the force transmitting rod 52 moving downwardly when a pressure is exerted upon the diaphragm 24, the force transmitting rod 52 thereby exerting force upon the sensor element 54. The diaphragm 24 has a central region 26 contacting with the force transmitting rod 52, and a surrounding region 27 surrounding the periphery of the central region 26 and connecting the central region 26 with the housing 20.

Abstract: A pressure sensor is realized wherein output error of sensor element can be reduced even in the case where the pressure sensor is utilized in high temperature conditions. A pressure sensor is provided with a housing 20, a diaphragm 24 that partitions the interior and the exterior of the housing 20, a sensor element 54 provided within the housing 20, output value of the sensor element 54 varying in accordance with force exerted thereupon, and a force transmitting rod 52 provided within the housing, the force transmitting rod 52 moving downwardly when a pressure is exerted upon the diaphragm 24, the force transmitting rod 52 thereby exerting force upon the sensor element 54. The diaphragm 24 has a central region 26 contacting with the force transmitting rod 52, and a surrounding region 27 surrounding the periphery of the central region 26 and connecting the central region 26 with the housing 20.

Abstract: A force sensing element is provided with a gauge portion and a plurality of electrodes. The gauge portion is formed of an n-type semiconductor substrate whose (100)-face serves as a main face, a p-type semiconductor substrate whose (110)-face serves as a main face, or a p-type semiconductor substrate whose (111)-face serves as a main face, and is pressed in a thickness direction of the semiconductor substrate upon receiving a force. The electrodes are electrically connected to the gauge portion such that a current path extending in a direction corresponding to the thickness direction of the semiconductor substrate is formed in the gauge portion. The force sensing element thus constructed makes it possible to detect a force with high precision.

Abstract: A pressure sensor has a housing having a first block and a second block provided therein. A force to be measured applies upon a upper face of the first block. An upper face of the second block makes contact with a base face of the first block. Piezoresistive elements are formed within the base face of the first block. The resistance values of these piezoresistive elements change as contacting pressure between the first block and the second block changes. A first electrode is formed on an upper face of the first block. A second electrode is formed on a base face of the second block. Electrical characteristics between the first electrode and the second electrode change following change in the contacting pressure between the first block and the second block.

Abstract: Force detection devices may have high detection precision and may prevent current leakage through a strain gage 126 to the outside. For example, a force detection block 120 may include a semiconductor substrate 122, a first insulating layer 124 and a semiconductor layer 126 (strain gage). The strain gage 126 preferably includes a site where resistance changes in accordance with the stress acting thereon. The strain gage 126 preferably constitutes at least a portion of a ridge 130 projects from the surface of the force detection block 120. A force transmission block 138 may be attached to a top surface of the ridge 130. The width of the first insulating layer 124 is preferably greater than the width of the semiconductor layer 126.

Abstract: A detector has first and second excitation beams extending along X-axis and Y-axis directions. These beams are fixed to a substrate via an intersecting portion. Mass portions are disposed at free ends of the beams. Sensing electrodes are disposed at the central portions of the mass portions to face the mass portions. By electrostatic force generated between the excitation electrodes and the mass portions, two mass portions vibrate in the Y-axis direction, while the remaining two mass portions vibrate in the X-axis direction. When an angular velocity .OMEGA..sub.x acts about the X axis, Z-axis Coriolis forces F.sub.1a and F.sub.1b act on the mass portions that are vibrating in the Y-axis direction. When an angular velocity .OMEGA..sub.y acts about the Y axis, Z-axis Coriolis forces F.sub.2a and F.sub.2b act on the mass portions that are vibrating in the X-axis direction. These vibrations are detected by the sensing electrodes in order to detect the angular velocities .OMEGA..sub.x and .OMEGA..sub.y.

Abstract: A resonance type angular velocity sensor is provided with a mass displacement supporting beam (20, 21, 22, 23) for supporting a vibration in a detecting direction due to a Coriolis force of a mass portion (1) and a mass excitation supporting beam for supporting a mass displacement supporting base portion (24, 25) in such a manner as to allow the mass portion (1) to vibrate away from the beam in an excitation direction. When the mass displacement supporting base portion (24) is excited in the excitation direction by an opposing comb exciting electrode (51), the mass portion (1) vibrates. A projecting electrode (31) is provided in a side surface of the Coriolis force detecting direction of the mass portion (1) and capacity detecting electrodes (30, 32) are disposed in such a manner as to oppose this.

Abstract: A force transducer comprising: a silicon semiconductor having a crystal face of (110); a pair of input-output shared electrodes mounted on the crystal face of the silicon semiconductor in mutual confronting relationship in a direction of <110> of the crystal or a direction equivalent to the direction of <110>; a force transmission block connected to the crystal face of the silicon semiconductor for transmitting a force W perpendicularly to the crystal face; and a support bed supporting the silicon semiconductor and connected to the silicon semiconductor at a face opposite to the crystal face to which the force transmission block is connected, whereby a voltage corresponding to the force W and to be measured is output from the input-output shared electrodes when the force W is applied perpendicularly to the crystal face of the silicon semiconductor via the force transmission block while a current flows in the silicon semiconductor via the input-output shared electrodes.

Abstract: A force transducer comprises: an N-type silicon single crystal having a crystal face of (110) on which a force is applied; a pair of first electrodes and a pair of second electrodes mounted on the crystal face of (110) of the N-type silicon single crystal, the first electrodes facing in a direction angularly spaced by 135 degrees from a direction of <001> of the crystal, and the second electrodes being angularly spaced by 90 degrees from the first electrodes, one of the pairs of first and second electrodes being adapted to serve as input electrodes and the other being adapted to serve as output electrodes; a force transmission block connected to the crystal face of (110) of the N-type silicon single crystal for transmitting the force perpendicularly to the crystal face; and a support bed supporting the N-type silicon single crystal and connected to the N-type silicon single crystal at a face opposite to the crystal face to which the force transmission block is connected, the support bed being in the for

Abstract: A semiconductor pressure transducer for detecting a pressure applied to a diaphragm.

Abstract: A force transducer for detecting compression. The force transducer comprises an Si single crystal so formed as to have a crystal face of {110} as the surface to which compression is applied; a first pair of opposing electrodes provided on the Si single crystal in the direction having an angle of 45 degrees with the direction of <001> of the Si single crystal and a second pair of opposing electrodes provided on the Si single crystal in the direction having an angle of 45 degrees with the direction of <110> of the Si single crystal; a seat which is bonded to the crystal face of {110} of the Si single crystal and which transmits the compression substantially uniformly to the crystal face; and a base which is bonded to the surface of the Si single crystal opposite to the surface bonded with the seat and which supports the Si single crystal. The force transducer has a simple structure as a whole and is capable of detecting compression with accuracy.