Patents by Inventor Yoshiyuki Nagatomo

Yoshiyuki Nagatomo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10410951
    Abstract: A bonded body is provided in which an aluminum alloy member formed from an aluminum alloy, and a metal member formed from copper, nickel, or silver are bonded to each other. The aluminum alloy member is constituted by an aluminum alloy in which a concentration of Si is in a range of 1 mass % to 25 mass %. The aluminum alloy member and the metal member are subjected to solid-phase diffusion bonding. A compound layer, which is formed through diffusion of Al of the aluminum alloy member and a metal element of the metal member, is provided at a bonding interface between the aluminum alloy member and the metal member. A Mg-concentrated layer, in which a concentration of Mg is to 3 mass % or greater, is formed at the inside of the compound layer, and the thickness of the Mg-concentrated layer is in a range of 1 ?m to 30 ?m.
    Type: Grant
    Filed: October 18, 2017
    Date of Patent: September 10, 2019
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Nobuyuki Terasaki, Yoshiyuki Nagatomo
  • Patent number: 10370303
    Abstract: Disclosed is provided a process for producing a bonded body by bonding a ceramic member made of a ceramic to a Cu member made of Cu or a Cu alloy, the process including: a laminating step of laminating the Cu member on a first surface side of the ceramic member via a brazing material containing Cu and a eutectic element which has a eutectic reaction with Cu, and via an active metal; and a heating step of heating the ceramic member and the Cu member which are laminated together.
    Type: Grant
    Filed: April 16, 2015
    Date of Patent: August 6, 2019
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Nobuyuki Terasaki, Yoshiyuki Nagatomo
  • Patent number: 10375825
    Abstract: This power module substrate includes a copper plate that is formed of copper or a copper alloy and is laminated on a surface of a ceramic substrate 11; a nitride layer 31 that is formed on the surface of the ceramic substrate 11 between the copper plate and the ceramic substrate 11; and an Ag—Cu eutectic structure layer 32 having a thickness of 15 ?m or less that is formed between the nitride layer and the copper plate.
    Type: Grant
    Filed: October 10, 2016
    Date of Patent: August 6, 2019
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Nobuyuki Terasaki, Yoshiyuki Nagatomo, Kimihito Nishikawa, Yoshirou Kuromitsu
  • Publication number: 20190189548
    Abstract: A power module substrate of the present invention includes a ceramic substrate and a circuit layer having a circuit pattern. In an interface between the circuit layer and the ceramic substrate, a Cu—Sn layer and a Ti-containing layer are laminated in this order from the ceramic substrate side. In a cross-sectional shape of an end portion of the circuit pattern of the circuit layer, an angle ? formed between a surface of the ceramic substrate and an end face of the Cu—Sn layer is set in a range equal to or greater than 80° and equal to or smaller than 100°, and a maximum protrusion length L of the Cu—Sn layer or the Ti-containing layer from an end face of the circuit layer is set in a range equal to or greater than 2?m and equal to or smaller than 15 ?m.
    Type: Application
    Filed: May 17, 2017
    Publication date: June 20, 2019
    Inventors: Toyo OHASHI, Yoshiyuki NAGATOMO
  • Patent number: 10319664
    Abstract: A bonded body is provided in which an aluminum alloy member formed from an aluminum alloy, and a metal member formed from copper, nickel, or silver are bonded to each other. The aluminum alloy member is constituted by an aluminum alloy in which a concentration of Si is in a range of 1 mass % to 25 mass %. The aluminum alloy member and the metal member are subjected to solid-phase diffusion bonding. A compound layer, which is formed through diffusion of Al of the aluminum alloy member and a metal element of the metal member, is provided at a bonding interface between the aluminum alloy member and the metal member. A Mg-concentrated layer, in which a concentration of Mg is to 3 mass % or greater, is formed at the inside of the compound layer, and the thickness of the Mg-concentrated layer is in a range of 1 ?m to 30 ?m.
    Type: Grant
    Filed: April 11, 2016
    Date of Patent: June 11, 2019
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Nobuyuki Terasaki, Yoshiyuki Nagatomo
  • Patent number: 10283431
    Abstract: The present invention is a bonded body in which an aluminum member constituted by an aluminum alloy, and a metal member constituted by copper, nickel, or silver are bonded to each other. The aluminum member is constituted by an aluminum alloy in which a Si concentration is set to be in a range of 1 mass % to 25 mass %. A Ti layer is formed at a bonding portion between the aluminum member and the metal member, and the aluminum member and the Ti layer, and the Ti layer and the metal member are respectively subjected to solid-phase diffusion bonding.
    Type: Grant
    Filed: August 24, 2015
    Date of Patent: May 7, 2019
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Nobuyuki Terasaki, Yoshiyuki Nagatomo
  • Publication number: 20190044042
    Abstract: A thermoelectric conversion module in which a plurality of P-type thermoelectric conversion elements and N-type thermoelectric conversion elements, which are combined in pairs, are connected in series between a pair of opposing wiring substrates via the wiring substrates: electrode parts to which the thermoelectric conversion elements are connected, are formed on surfaces of ceramic substrates of the wiring substrates: among the thermoelectric conversion elements, the thermoelectric conversion element having a larger thermal expansion coefficient has the length, in a direction in which the wiring substrates face each other, that is smaller than the length, in a direction in which the wiring substrates face each other, of the thermoelectric conversion element having a smaller thermal expansion coefficient: an electrically conductive spacer is interposed between at least one of the two ends of the thermoelectric conversion element having a larger thermal expansion coefficient and the ceramic substrate of the wi
    Type: Application
    Filed: September 26, 2016
    Publication date: February 7, 2019
    Applicants: MITSUBISHI MATERIALS CORPORATION, MITSUBISHI MATERIALS CORPORATION
    Inventors: Yoshinobu Nakada, Toshiyuki Nagase, Masahito Komasaki, Yoshiyuki Nagatomo
  • Patent number: 10199237
    Abstract: A method for manufacturing a power-module substrate includes a lamination step of laminating a ceramic member and a copper member through an active metal material and a filler metal having a melting point of 710° C. or lower, and a heating treatment step of heating the ceramic member and the copper member laminated together.
    Type: Grant
    Filed: March 17, 2014
    Date of Patent: February 5, 2019
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Nobuyuki Terasaki, Yoshiyuki Nagatomo
  • Publication number: 20190035710
    Abstract: A bonded body of the present invention includes a ceramic member formed of ceramics and a Cu member formed of Cu or a Cu alloy. In a bonded interface between the ceramic member and the Cu member, a Cu—Sn layer which is positioned on the ceramic member side and in which Sn forms a solid solution in Cu, a first intermetallic compound layer which is positioned on the Cu member side and contains Cu and Ti, and a second intermetallic compound layer which is positioned between the first intermetallic compound layer and the Cu—Sn layer and contains P and Ti are formed.
    Type: Application
    Filed: January 20, 2017
    Publication date: January 31, 2019
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Nobuyuki Terasaki, Yoshiyuki Nagatomo
  • Publication number: 20190035703
    Abstract: An Ag underlayer-attached metallic member includes a metallic member joined with a body to be joined and an Ag underlayer formed on a joining surface of the metallic member with the body to be joined, the Ag underlayer includes a glass layer formed on a metallic member side and an Ag layer laminated on the glass layer, and an area proportion of voids in an Ag layer surface of the Ag underlayer is 25% or less.
    Type: Application
    Filed: January 26, 2017
    Publication date: January 31, 2019
    Inventors: Shuji Nishimoto, Yoshiyuki Nagatomo
  • Publication number: 20190027380
    Abstract: A semiconductor device of the present invention includes a circuit layer formed of a conductive material, a semiconductor element mounted on a first surface of the circuit layer, and a ceramic substrate disposed on a second surface of the circuit layer, in which a Ag underlayer having a glass layer and a Ag layer laminated on the glass layer is formed on the first surface of the circuit layer, and the Ag layer of the Ag underlayer and the semiconductor element are directly joined together.
    Type: Application
    Filed: February 7, 2017
    Publication date: January 24, 2019
    Inventors: Shuji Nishimoto, Yoshiyuki Nagatomo
  • Patent number: 10173282
    Abstract: The bonded body of the present invention includes: a ceramic member made of ceramics; and a Cu member which is made of Cu or a Cu alloy and bonded to the ceramic member through a Cu—P—Sn-based brazing filler material and a Ti material, wherein a Cu—Sn layer, which is positioned close to the ceramic member and in which Sn forms a solid solution with Cu, and a Ti layer which is positioned between the Cu member and the Cu—Sn layer, are formed at a bonded interface between the ceramic member and the Cu member, a first intermetallic compound layer made of Cu and Ti is formed between the Cu member and the Ti layer, and a second intermetallic compound layer containing P is formed between the Cu—Sn layer and the Ti layer.
    Type: Grant
    Filed: August 18, 2014
    Date of Patent: January 8, 2019
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Nobuyuki Terasaki, Yoshiyuki Nagatomo
  • Publication number: 20180346387
    Abstract: A joined body according to the invention is a ceramic/aluminum joined body including: a ceramic member; and an aluminum member made of aluminum or an aluminum alloy, in which the ceramic member and the aluminum member are joined to each other, the ceramic member is formed of silicon nitride containing magnesium, and a joining layer in which magnesium is contained in an aluminum-silicon-oxygen-nitrogen compound is formed at a joining interface between the ceramic member and the aluminum member.
    Type: Application
    Filed: November 8, 2016
    Publication date: December 6, 2018
    Inventors: Nobuyuki Terasaki, Yoshiyuki Nagatomo
  • Publication number: 20180323122
    Abstract: The present invention provides a ceramic-aluminum bonded body in which Mg-containing oxide having a spinel crystal structure are dispersed in an aluminum member within a range of 2 ?m in a thickness direction from a bonded interface with a ceramic member, a segregated portion in which Mg, Si, and O is segregated is formed in the aluminum member in the vicinity of the bonded interface with the ceramic member, mass ratios of Mg, Si, and O between the segregated portion and a position spaced by 10 ?m from the bonded interface toward an aluminum member side are within predetermined ranges, and the amount of Mg at the position spaced by 10 ?m from the bonded interface toward the aluminum member side is 0.8 mass % or less.
    Type: Application
    Filed: August 29, 2016
    Publication date: November 8, 2018
    Inventors: Yoshirou Kuromitsu, Kazuhiro Akiyama, Toshiyuki Nagase, Yoshiyuki Nagatomo, Nobuyuki Terasaki, Yuichi Ikuhara, Naoya Shibata, Akihito Kumamoto
  • Patent number: 10103035
    Abstract: There is a provided a copper-ceramic bonded body in which a copper member formed of copper or a copper alloy and a ceramic member formed of nitride ceramic are bonded to each other, in which an active element oxide layer containing an active element and oxygen is formed at bonding interfaces between the copper member and the ceramic member, and a thickness t of the active element oxide layer is in a range of 5 nm to 220 nm.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: October 16, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Nobuyuki Terasaki, Yoshiyuki Nagatomo
  • Patent number: 10016956
    Abstract: A Cu/ceramic bonded body according to the present invention is formed by bonding a copper member made of copper or a copper alloy and a ceramic member made of AlN or Al2O3 using a bonding material containing Ag and Ti, in which a Ti compound layer made of a Ti nitride or a Ti oxide is formed at a bonding interface between the copper member and the ceramic member, and Ag particles are dispersed in the Ti compound layer.
    Type: Grant
    Filed: September 25, 2014
    Date of Patent: July 10, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Nobuyuki Terasaki, Yoshiyuki Nagatomo
  • Patent number: 10011093
    Abstract: A bonding structure of an aluminum member and a copper member includes: the aluminum member composed of aluminum or an aluminum alloy, and the copper member composed of copper or a copper alloy in which the aluminum member and the copper member are bonded together by solid phase diffusion bonding; an intermetallic compound layer that is made of copper and aluminum and is formed in a bonding interface between the aluminum member and the copper member; and an oxide dispersed in an interface between the copper member and the intermetallic compound layer in a layered form along the interface.
    Type: Grant
    Filed: September 18, 2013
    Date of Patent: July 3, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Nobuyuki Terasaki, Yoshiyuki Nagatomo
  • Patent number: 9966353
    Abstract: An elongated trench (35) is formed so as to connect the Ag layer (32) and the exposed part of the circuit layer stretching out around the Ag layer (32). The trench (35) a narrow and elongated recessed part penetrating the glass layer (31) and the aluminum oxide film (12A) from the Ag layer (32) to reach the surface (12a) of the circuit layer (2). The extended part (36), which is a part of the Ag layer (32) flatted along with the inner surface (35a) of the trench (35), is formed in the trench (35). The Ag layer (32) and the circuit layer (12) are electrically connected directly by Ag with a low electric resistance value by the extended part (36) in the portion where the trench (35) is formed.
    Type: Grant
    Filed: December 22, 2014
    Date of Patent: May 8, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Shuji Nishimoto, Yoshiyuki Nagatomo
  • Patent number: 9968012
    Abstract: A heat-sink-attached-power module substrate (1) has a configuration such that either one of a metal layer (13) and a heat sink (31) is composed of aluminum or an aluminum alloy, and the other one of them is composed of copper or a copper alloy, the metal layer (13) and the heat sink (31) are bonded together by solid phase diffusion bonding, an intermetallic compound layer formed of copper and aluminum is formed in a bonding interface between the metal layer (13) and the heat sink (31), and an oxide is dispersed in an interface between the intermetallic compound layer and either one of the metal layer (13) composed of copper or a copper alloy and heat sink (31) composed of copper or a copper alloy in a layered form along the interface.
    Type: Grant
    Filed: October 11, 2013
    Date of Patent: May 8, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Nobuyuki Terasaki, Yoshiyuki Nagatomo, Yoshirou Kuromitsu
  • Patent number: 9953944
    Abstract: A power module is disclosed, including a power module substrate in which a circuit layer is arranged on one surface of an insulating layer; and a semiconductor element that is bonded onto the circuit layer, in which a copper layer composed of copper or a copper alloy is provided on a surface of the circuit layer to be bonded to the semiconductor element, a solder layer formed by using a solder material between the circuit layer and the semiconductor element is provided, an alloy layer containing Sn as a main component, 0.5% by mass or more and 10% by mass or less of Ni, and 30% by mass or more and 40% by mass or less of Cu at an interface of the solder layer with the circuit layer is formed, and the coverage of the alloy layer at the interface is 85% or more.
    Type: Grant
    Filed: March 25, 2014
    Date of Patent: April 24, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Toyo Ohashi, Yoshiyuki Nagatomo