Abstract: An insulated circuit board which is obtained by bonding a circuit layer onto one side of a ceramic substrate, and bonding a metal layer made of copper or copper alloy onto the other side of the ceramic substrate; and a heat sink which is bonded to the metal layer are included; the heat sink has a first metal layer made of aluminum or aluminum alloy joined to the metal layer, a ceramic board material joined to the first metal layer at an opposite side to the metal layer, and a second metal layer made of aluminum or aluminum alloy joined to the ceramic board material at an opposite side to the first metal layer; a thickness T1 of the first metal layer and a thickness T2 of the second metal layer are 0.8 mm to 3.0 mm inclusive; and a thickness ratio T1/T2 is 1.0 or more.

Abstract: A thermoelectric conversion module includes thermoelectric conversion elements, and a first insulating circuit board provided with a first insulating layer and a first electrode part formed on one surface of the first insulating layer is disposed on one end side of the thermoelectric conversion elements. The first electrode part includes a first aluminum layer made of aluminum or an aluminum alloy, and a first sintered silver layer which is formed on a surface of the first aluminum layer on a side opposite to the first insulating layer and is formed of a sintered body of silver. The first aluminum layer has a thickness in a range of 50 ?m or more and 2000 ?m or less. The first sintered silver layer has a thickness of 5 ?m or more and a porosity of less than 10% at least in a region where the thermoelectric conversion element is disposed.

Abstract: A power module substrate according to the present invention is a power module substrate in which a copper sheet made of copper or a copper alloy is laminated and bonded onto a surface of a ceramic substrate (11), an oxide layer (31) is formed on the surface of the ceramic substrate (11) between the copper sheet and the ceramic substrate (11), and the thickness of a Ag—Cu eutectic structure layer (32) is set to 15 ?m or less.

Abstract: To provide a method of manufacturing power module substrate board at high productivity and a ceramic-copper bonded body in which warps are reduced. In a bonded body-forming step, a circuit layer-forming copper layer consisting of a plurality of first copper layers is formed by arranging and bonding a plurality of first copper boards on a first surface of a ceramic board, and a metal layer-forming copper layer consisting of a second copper layer with a smaller arrangement number than that of the first copper layers is formed by bonding a second copper board having a larger planar area than that of the first copper board and a smaller thickness than that of the first copper board so as to cover at least two of adjacent substrate board-forming areas on a second surface of the ceramic board among the substrate board-forming areas partitioned by the dividing groove.

Abstract: A bonded body of the present invention includes a ceramic member formed of ceramics and a Cu member formed of Cu or a Cu alloy. In a bonding layer formed between the ceramic member and the Cu member, an area ratio of a Cu3P phase in a region extending by up to 50 ?m toward the Cu member side from a bonding surface of the ceramic member is equal to or lower than 15%.

Abstract: Forming aluminum circuit layers forming an aluminum circuit layers on one surface of a ceramic substrate and forming copper circuit layers are included. The copper circuit layers are formed by laminating copper boards for the circuit layers on the respective aluminum circuit layers, arranging the laminate between a pair of support boards having a convex curved surface at least on one surface so as to face to each other, moving the support boards in a facing direction to press the laminate in a lamination direction, and heating in this pressing state so that the copper boards for the circuit layers are bonded on the aluminum circuit layers respectively by solid phase diffusion. In the step of forming the copper circuit layers, the support boards are arranged so that either one of the convex curved surface is in contact with the adjacent copper boards for the circuit layers in the laminate.

Abstract: Provided with an insulation circuit board in which a circuit layer is joined to one side of a ceramic substrate and a metal layer made of aluminum or aluminum alloy is joined to the other side of the ceramic substrate, and a heat sink joined to the metal layer; the heat sink has a first metal layer made of copper joined to the metal layer, a ceramic board material joined to the first metal layer at an opposite side to the metal layer, and a second metal layer made of copper or copper alloy joined to an opposite side of the ceramic board material to the first metal layer; and a thickness T1 of the first metal layer is 0.3 mm to 3.0 mm inclusive and equal to or more than a thickness T2 of the second metal layer.

Abstract: What is provided is a method of manufacturing an insulating circuit board with a heatsink including an insulating circuit board and a heatsink, the heatsink being bonded to the metal layer side of the insulating circuit board, the metal layer being formed of aluminum, and a bonding surface of the heatsink with the insulating circuit board being formed of an aluminum alloy having a solidus temperature of 650° C. or lower. This method includes a high alloy element concentration portion forming step (S02) of forming a high alloy element concentration portion and a heatsink bonding step (S03) of bonding the heatsink, in which a ratio tb/ta of a thickness tb of the brazing material layer to a thickness to of the core material in the clad material is in a range of 0.1 to 0.3.

Abstract: An insulated circuit board having a ceramic substrate, a circuit layer on which a circuit pattern is formed and that is bonded to one surface of the ceramic substrate, and a metal layer bonded to the other surface of the ceramic substrate. The circuit layer has a first circuit layer that is bonded to the ceramic substrate and is made of aluminum and a second circuit layer that is bonded to the upper surface of the first circuit layer and is made of copper, the metal layer has a first metal layer that is bonded to the ceramic substrate and is made of aluminum and a second metal layer that is bonded to the upper surface of the first metal layer and is made of copper, and the thicknesses of the first circuit layer and the first metal layer are each 0.2 mm or more and 0.9 mm or less.

Abstract: Provided is an insulated circuit board including a ceramic substrate, a circuit layer, and a metal layer that is bonded to the other surface of the ceramic substrate, the circuit layer and the metal layer are made of copper or a copper alloy, the circuit layer is formed of a plurality of punched sheets bonded to the ceramic substrate at an interval, the thickness of the circuit layer is 0.4 mm or more and 2.0 mm or less, when the bonding area of the circuit layer is represented by S1, and the bonding area of the metal layer is represented by S2, the area ratio S1/S2 is 0.5 or more and 0.8 or less, and, when the thickness of the circuit layer is represented by T1, and the thickness of the metal layer is represented by T2, the thickness ratio T1/T2 is 1.2 or more and 1.7 or less.

Abstract: An Ag underlayer-attached metallic member includes a metallic member joined with a body to be joined and an Ag underlayer formed on a joining surface of the metallic member with the body to be joined, the Ag underlayer includes a glass layer formed on a metallic member side and an Ag layer laminated on the glass layer, and an area proportion of voids in an Ag layer surface of the Ag underlayer is 25% or less.

Abstract: The present invention provides a ceramic-aluminum bonded body in which Mg-containing oxide having a spinel crystal structure are dispersed in an aluminum member within a range of 2 ?m in a thickness direction from a bonded interface with a ceramic member, a segregated portion in which Mg, Si, and O is segregated is formed in the aluminum member in the vicinity of the bonded interface with the ceramic member, mass ratios of Mg, Si, and O between the segregated portion and a position spaced by 10 ?m from the bonded interface toward an aluminum member side are within predetermined ranges, and the amount of Mg at the position spaced by 10 ?m from the bonded interface toward the aluminum member side is 0.8 mass % or less.

Abstract: The present invention is a bonded body in which an aluminum member constituted by an aluminum alloy, and a metal member constituted by copper, nickel, or silver are bonded to each other. The aluminum member is constituted by an aluminum alloy in which a solidus temperature is set to be less than a eutectic temperature of a metal element that constitutes the metal member and aluminum. A Ti layer is formed at a bonding portion between the aluminum member and the metal member, and the aluminum member and the Ti layer, and the Ti layer and the metal member are respectively subjected to solid-phase diffusion bonding.

Abstract: A thermoelectric conversion module in which a plurality of P-type thermoelectric conversion elements and N-type thermoelectric conversion elements, which are combined in pairs, are connected in series between a pair of opposing wiring substrates via the wiring substrates: electrode parts to which the thermoelectric conversion elements are connected, are formed on surfaces of ceramic substrates of the wiring substrates: among the thermoelectric conversion elements, the thermoelectric conversion element having a larger thermal expansion coefficient has the length, in a direction in which the wiring substrates face each other, that is smaller than the length, in a direction in which the wiring substrates face each other, of the thermoelectric conversion element having a smaller thermal expansion coefficient: an electrically conductive spacer is interposed between at least one of the two ends of the thermoelectric conversion element having a larger thermal expansion coefficient and the ceramic substrate of the wi

Abstract: A method for producing a bonded body includes: a laminating step of forming a laminated body in which a first member and a second member are temporarily bonded to each other by providing a temporary bonding material including an organic material on at least one of a bonding surface of the first member and a bonding surface of the second member; and a bonding step of pressurizing and heating the laminated body in a laminating direction and bonding the first member and the second member to each other. In the bonding step, during a temperature increase process of heating the laminated body up to a predetermined bonding temperature, at least a pressurization load P2 at a decomposition temperature TD of the organic material included in the temporary bonding material is lower than a pressurization load P1 at the bonding temperature.

Abstract: A joined body according to the invention is a ceramic/aluminum joined body including: a ceramic member; and an aluminum member made of aluminum or an aluminum alloy, in which the ceramic member and the aluminum member are joined to each other, the ceramic member is formed of silicon nitride containing magnesium, and a joining layer in which magnesium is contained in an aluminum-silicon-oxygen-nitrogen compound is formed at a joining interface between the ceramic member and the aluminum member.

Abstract: A semiconductor device of the present invention includes a circuit layer formed of a conductive material, a semiconductor element mounted on a first surface of the circuit layer, and a ceramic substrate disposed on a second surface of the circuit layer, in which a Ag underlayer having a glass layer and a Ag layer laminated on the glass layer is formed on the first surface of the circuit layer, and the Ag layer of the Ag underlayer and the semiconductor element are directly joined together.

Abstract: A bonded body is provided that is formed by bonding a metal member formed from copper, nickel, or silver, and an aluminum alloy member formed from an aluminum alloy of which a solidus temperature is lower than a eutectic temperature of aluminum and a metal element that constitutes the metal member. The aluminum alloy member and the metal member are subjected to solid-phase diffusion bonding. A chill layer, in which a Si phase of which an aspect ratio of a crystal grain is 2.5 or less and a crystal grain diameter is 15 ?m or less is dispersed, is formed on a bonding interface side with the metal member in the aluminum alloy member. The thickness of the chill layer is set to 50 ?m or greater.

Abstract: A bonded body is provided that is formed by bonding a metal member formed from copper, nickel, or silver, and an aluminum alloy member formed from an aluminum alloy of which a solidus temperature is lower than a eutectic temperature of aluminum and a metal element that constitutes the metal member. The aluminum alloy member and the metal member are subjected to solid-phase diffusion bonding. A chill layer, in which a Si phase of which an aspect ratio of a crystal grain is 2.5 or less and a crystal grain diameter is 15 ?m or less is dispersed, is formed on a bonding interface side with the metal member in the aluminum alloy member. The thickness of the chill layer is set to 50 ?m or greater.

Abstract: A power module substrate of the present invention includes a ceramic substrate and a circuit layer having a circuit pattern. In an interface between the circuit layer and the ceramic substrate, a Cu—Sn layer and a Ti-containing layer are laminated in this order from the ceramic substrate side. In a cross-sectional shape of an end portion of the circuit pattern of the circuit layer, an angle ? formed between a surface of the ceramic substrate and an end face of the Cu—Sn layer is set in a range equal to or greater than 80° and equal to or smaller than 100°, and a maximum protrusion length L of the Cu—Sn layer or the Ti-containing layer from an end face of the circuit layer is set in a range equal to or greater than 2?m and equal to or smaller than 15 ?m.