Abstract: A method for detecting a metal residue present in an electric-resistance-welded steel pipe includes a first step of inserting the electric-resistance-welded steel pipe into an exciting coil while relatively moving the electric-resistance-welded steel pipe in a longitudinal direction and magnetizing the electric-resistance-welded steel pipe using a direct current at a field intensity capable of magnetizing the electric-resistance-welded steel pipe and the metal residue up to a magnetic saturation state by the exciting coil and a second step of inserting the electric-resistance-welded steel pipe into a detecting coil while relatively moving the electric-resistance-welded steel pipe in the longitudinal direction, detecting an induced electromotive force generated in the detecting coil by a change in a magnetic flux caused by the direct-current magnetization by the exciting coil in the first step as an output signal of the detecting coil, and detecting the metal residue present in the electric-resistance-welded s

Abstract: A device of detecting magnetic characteristic change for a long material includes: an exciting coil into which the long material is inserted and which magnetizes the long material in a longitudinal direction; a detecting coil into which the long material is inserted and which detects a magnetic flux generated in the long material due to magnetization by the exciting coil; and a yoke member which has a first opening portion which is positioned on one side of the long material in the longitudinal direction and into which the long material is inserted and a second opening portion which is positioned on the other side of the long material in the longitudinal direction and into which the long material is inserted, and has a shape which is substantially axially symmetrical about an axis passing the first opening portion and the second opening portion, and the exciting coil and the detecting coil are surrounded by the yoke member, the first opening portion, and the second opening portion.

Abstract: A method for detecting a metal residue present in an electric-resistance-welded steel pipe includes a first step of inserting the electric-resistance-welded steel pipe into an exciting coil while relatively moving the electric-resistance-welded steel pipe in a longitudinal direction and magnetizing the electric-resistance-welded steel pipe using a direct current at a field intensity capable of magnetizing the electric-resistance-welded steel pipe and the metal residue up to a magnetic saturation state by the exciting coil and a second step of inserting the electric-resistance-welded steel pipe into a detecting coil while relatively moving the electric-resistance-welded steel pipe in the longitudinal direction, detecting an induced electromotive force generated in the detecting coil by a change in a magnetic flux caused by the direct-current magnetization by the exciting coil in the first step as an output signal of the detecting coil, and detecting the metal residue present in the electric-resistance-welded s

Abstract: A device of detecting magnetic characteristic change for a long material includes: an exciting coil into which the long material is inserted and which magnetizes the long material in a longitudinal direction; a detecting coil into which the long material is inserted and which detects a magnetic flux generated in the long material due to magnetization by the exciting coil; and a yoke member which has a first opening portion which is positioned on one side of the long material in the longitudinal direction and into which the long material is inserted and a second opening portion which is positioned on the other side of the long material in the longitudinal direction and into which the long material is inserted, and has a shape which is substantially axially symmetrical about an axis passing the first opening portion and the second opening portion, and the exciting coil and the detecting coil are surrounded by the yoke member, the first opening portion, and the second opening portion.

Abstract: A method of adjusting flaw detection sensitivity on an array ultrasonic probe comprises disposing a plate material P1 oppositely to the ultrasonic probe such that an upper surface of the plate material is disposed to be approximately parallel to an array direction of the transducers 11, or disposing a tubular material P2 oppositely to the ultrasonic probe such that an axial direction of the tubular material is disposed to be approximately parallel to the array direction of the transducers. Ultrasonic waves are transmitted from each transducer toward the upper surface of the plate material or an outer surface of the tubular material, and echoes are received from the bottom surface of the plate material or an inner surface of the tubular material on each transducer. Flaw detection sensitivity of each transducer is adjusted to substantially equalize intensity of an echo received on each transducer.

Abstract: A semiconductor device includes a semiconductor substrate, an oxygen-containing insulating film disposed above the above-described semiconductor substrate, a concave portion disposed in the above-described insulating film, a copper-containing first film disposed on an inner wall of the above-described concave portion, a copper-containing second film disposed above the above-described first film and filled in the above-described concave portion, and a manganese-containing oxide layer disposed between the above-described first film and the above-described second film. Furthermore, a copper interconnection is formed on the above-described structure by an electroplating method and, subsequently, a short-time heat treatment is conducted at a temperature of 80° C. to 120° C.

Abstract: A magnetic testing apparatus 100 according to the present invention comprises: a first magnetizing device 1 for applying a DC bias magnetic field to a test object P in substantially parallel to the direction in which a flaw F to be detected extends; a second magnetizing device 2 for applying an AC magnetic field to the test object P substantially perpendicularly to the direction in which the flaw F to be detected extends; and a detecting device 3 for detecting leakage flux produced by the magnetization of the test object P accomplished by the first magnetizing device 1 and the second magnetizing device 2.

Abstract: A defect inspecting apparatus includes a first light source, a first image capture device that receives the reflection light emitted from the first light source and reflected by the outer peripheral surface of a lip part to grab the image of the outer peripheral surface of the lip part, a second light source, a second image capture device 8 that receives the reflection light emitted from the second light source and reflected by a load face to grab the image of the load face, a third light source, a third image capture device that receives the reflection light emitted from the third light source and reflected by a thread bottom face inspection zone 106 to grab the image of the thread bottom face inspection zone, and an inspection device for inspecting defects by processing the captured images grabbed by the first to third image capture devices.

Abstract: A method of adjusting flaw detection sensitivity on an array ultrasonic probe comprises disposing a plate material P1 oppositely to the ultrasonic probe such that an upper surface of the plate material is disposed to be approximately parallel to an array direction of the transducers 11, or disposing a tubular material P2 oppositely to the ultrasonic probe such that an axial direction of the tubular material is disposed to be approximately parallel to the array direction of the transducers. Ultrasonic waves are transmitted from each transducer toward the upper surface of the plate material or an outer surface of the tubular material, and echoes are received from the bottom surface of the plate material or an inner surface of the tubular material on each transducer. Flaw detection sensitivity of each transducer is adjusted to substantially equalize intensity of an echo received on each transducer.

Abstract: In an eddy current testing method which involves using a rotatable eddy current testing probe in which a detection coil is arranged within an exciting coil, a change in detection sensitivity (a deviation of detection sensitivity) which changes depending on the rotational position of the detection coil is reduced. The eddy current testing probe includes an exciting coil EC1, a detection coil DC1, an exciting coil EC2 and a detection coil DC2, which are mounted on a disk DS. The eddy current testing probe is placed so as to face a circumferential surface of an object to be inspected T, which is in the shape of a circular cylinder, and the disk DS is rotated. Then, the distance (liftoff) between the detection coils DC1 and DC2 and an inspection surface changes. Therefore, also the detection sensitivity to a flaw signal changes. To reduce the change in detection sensitivity, the detection sensitivity is adjusted by detecting the rotational position (rotational angle) of the detection coils DC1 and DC2.

Abstract: A magnetic testing method and apparatus can accurately detect a flaw by magnetizing a test object to such a degree that the object becomes magnetically saturated while solving the problems of a large magnetizing device is required when only a DC magnetic field is applied and that the test object generates heat when only an AC magnetic field is applied. A magnetic testing apparatus comprises a first magnetizing device for applying a DC bias magnetic field to a test object P in substantially parallel to the direction in which a flaw F to be detected extends, a second magnetizing device for applying an AC magnetic field to the test object P substantially perpendicularly to the direction in which the flaw F to be detected extends, and a detecting device for detecting leakage flux produced by the magnetization of the test object P accomplished by the first and second magnetizing devices.

Abstract: An etching apparatus includes a process unit and a control unit. Emission intensity of plasma inside the process unit is obtained by an OES detector, a nonlinear regression analysis is performed by an etching control device to determine a regression formula. The nonlinear regression analysis is performed by using the emission intensity of the plasma obtained until a first time when the emission intensity of the plasma passes a peak, and a second time to be an etching end point is calculated by using the regression formula. The etching end point is calculated as a time when the emission intensity decreases for a predetermined value from the first time. The etching apparatus finishes an etching when the process reaches the etching end point. It is thereby possible to control the etching end point with high-accuracy.

Abstract: A rotary eddy current flaw detection probe device has a plurality of ?-shaped eddy current flaw detection probes attached in a rotating disc for detecting flaws in all directions regardless of the flaw direction. Four ?-shaped eddy current testing probes P11 to P22 are arranged around the rotation center Ds1 of a rotating disc 111 and are embedded in the disc 111. The coil planes of detector coils Ds11 to Ds22 of the testing probes P11 to P22 are parallel with each other, and are perpendicular to the rotation plane of the rotating disc 111. The coil planes of the detector coils incline at an angle ? relative to a line Y passing through the centers Ps11 and Ps12 of the probes P11 and P12. The detector coils Dc11 and Dc12 are cumulatively connected to each other and the detector coils Dc21 and Dc22 are differentially connected to each other.

Abstract: It is an object of the present invention to provide an eddy current testing apparatus capable of accurately detecting any flaws occurring in a columnar or cylindrical subject to be tested regardless of their extending directions, with the use of the same probe coil. The eddy current testing apparatus 100 according to the present invention comprises a spinning plate 1 and a probe coil 2 disposed on the spinning plate 1. The probe coil is a probe coil capable of obtaining a differential output about a scanning direction of a detection signal which corresponds to a detected eddy current induced in the subject to be tested. The spinning plate is disposed in such a position that a spinning center RC of the spinning plate faces with an axial center PC of the subject to be tested.

Abstract: A method for producing a semiconductor device including a first conductor disposed on a semiconductor substrate; an oxygen-containing insulation film disposed on the semiconductor substrate and on the first conductor, the insulation film having a contact hole which extends to the first conductor and a trench which is connected to an upper portion of the contact hole; a zirconium oxide film disposed on a side surface of the contact hole and a side surface and a bottom surface of the trench; a zirconium film disposed on the zirconium oxide film inside the contact hole and inside the trench; and a second conductor composed of Cu embedded into the contact hole and into the trench.

Abstract: A defect inspecting apparatus includes a first light source, a first image capture device that receives the reflection light emitted from the first light source and reflected by the outer peripheral surface of a lip part to grab the image of the outer peripheral surface of the lip part, a second light source, a second image capture device 8 that receives the reflection light emitted from the second light source and reflected by a load face to grab the image of the load face, a third light source, a third image capture device that receives the reflection light emitted from the third light source and reflected by a thread bottom face inspection zone 106 to grab the image of the thread bottom face inspection zone, and an inspection device for inspecting defects by processing the captured images grabbed by the first to third image capture devices.

Abstract: An etching apparatus includes a process unit and a control unit. Emission intensity of plasma inside the process unit is obtained by an OES detector, a nonlinear regression analysis is performed by an etching control device to determine a regression formula. The nonlinear regression analysis is performed by using the emission intensity of the plasma obtained until a first time when the emission intensity of the plasma passes a peak, and a second time to be an etching end point is calculated by using the regression formula. The etching end point is calculated as a time when the emission intensity decreases for a predetermined value from the first time. The etching apparatus finishes an etching when the process reaches the etching end point. It is thereby possible to control the etching end point with high-accuracy.

Abstract: A semiconductor device includes a semiconductor substrate, an oxygen-containing insulating film disposed above the above-described semiconductor substrate, a concave portion disposed in the above-described insulating film, a copper-containing first film disposed on an inner wall of the above-described concave portion, a copper-containing second film disposed above the above-described first film and filled in the above-described concave portion, and a manganese-containing oxide layer disposed between the above-described first film and the above-described second film. Furthermore, a copper interconnection is formed on the above-described structure by an electroplating method and, subsequently, a short-time heat treatment is conducted at a temperature of 80° C. to 120° C.

Abstract: In an eddy current testing method which involves using a rotatable eddy current testing probe in which a detection coil is arranged within an exciting coil, a change in detection sensitivity (a deviation of detection sensitivity) which changes depending on the rotational position of the detection coil is reduced. The eddy current testing probe includes an exciting coil EC1, a detection coil DC1, an exciting coil EC2 and a detection coil DC2, which are mounted on a disk DS. The eddy current testing probe is placed so as to face a circumferential surface of an object to be inspected T, which is in the shape of a circular cylinder, and the disk DS is rotated. Then, the distance (liftoff) between the detection coils DC1 and DC2 and an inspection surface changes. Therefore, also the detection sensitivity to a flaw signal changes. To reduce the change in detection sensitivity, the detection sensitivity is adjusted by detecting the rotational position (rotational angle) of the detection coils DC1 and DC2.

Abstract: A semiconductor device includes a semiconductor substrate, an oxygen-containing insulating film disposed above the above-described semiconductor substrate, a concave portion disposed in the above-described insulating film, a copper-containing first film disposed on an inner wall of the above-described concave portion, a copper-containing second film disposed above the above-described first film and filled in the above-described concave portion, and a manganese-containing oxide layer disposed between the above-described first film and the above-described second film. Furthermore, a copper interconnection is formed on the above-described structure by an electroplating method and, subsequently, a short-time heat treatment is conducted at a temperature of 80° C. to 120° C.