Patents by Inventor Yoshiyuki Utsumi

Yoshiyuki Utsumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10886398
    Abstract: A MOS-gate silicon carbide semiconductor device has an interlayer insulating film that covers a gate electrode and that has a 2-layer structure in which a NSG film and a BPSG film are sequentially stacked. The BPSG film has a boron concentration in a range from 4.5 mol % to 8.0 mol %. The BPSG film has a phosphorus concentration in a range from 1.0 mol % to 3.5 mol %. The NSG film has a thickness in a range from 50 nm to 400 nm. The BPSG film has a thickness in a range from 400 nm to 800 nm. A distance from the gate insulating film to the BPSG film is at most 100 nm at a portion where the gate insulating film and the BPSG film oppose each other across the NSG film.
    Type: Grant
    Filed: April 15, 2019
    Date of Patent: January 5, 2021
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Makoto Utsumi, Yoshiyuki Sakai
  • Patent number: 10790373
    Abstract: A semiconductor device includes a first barrier film covering the main surface of the active region and the insulating film layer, the first barrier film having an ohmic contact hole that exposes a contact portion of the ohmic contact formation region within the window of the insulating film layer; a base contact layer filled into the ohmic contact hole and making ohmic contact with the contact portion of the ohmic contact formation region; a second barrier film made of titanium, covering the base contact layer and the first barrier film; and a third barrier film made of titanium oxide and titanium nitride, covering a surface of the second barrier film.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: September 29, 2020
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Makoto Utsumi, Yoshiyuki Sakai
  • Publication number: 20200152594
    Abstract: A silicon carbide semiconductor device including a semiconductor substrate containing silicon carbide, a contact electrode, which is a silicide layer containing nickel, provided on a surface of the semiconductor substrate and forming an ohmic contact with the semiconductor substrate, and a metal connection layer provided on a surface of the contact electrode. The metal connection layer has a stacked structure in which on the surface of the contact electrode, a titanium layer, a nickel layer, and a gold layer are sequentially stacked. The titanium layer includes a carbon diffusion layer formed along an interface between the titanium layer and the contact electrode, a concentration of carbon being higher in the carbon diffusion layer than in a portion of the titanium layer other than the carbon diffusion layer. The titanium layer, the nickel layer and the gold layer have thicknesses of 100 nm to 300 nm, 1000 nm to 1500 nm, and 20 nm to 200 nm, respectively.
    Type: Application
    Filed: September 27, 2019
    Publication date: May 14, 2020
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Makoto UTSUMI, Yoshiyuki SAKAI
  • Publication number: 20190378921
    Abstract: A MOS-gate silicon carbide semiconductor device has an interlayer insulating film that covers a gate electrode and that has a 2-layer structure in which a NSG film and a BPSG film are sequentially stacked. The BPSG film has a boron concentration in a range from 4.5 mol % to 8.0 mol %. The BPSG film has a phosphorus concentration in a range from 1.0 mol % to 3.5 mol %. The NSG film has a thickness in a range from 50 nm to 400 nm. The BPSG film has a thickness in a range from 400 nm to 800 nm. A distance from the gate insulating film to the BPSG film is at most 100 nm at a portion where the gate insulating film and the BPSG film oppose each other across the NSG film.
    Type: Application
    Filed: April 15, 2019
    Publication date: December 12, 2019
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Makoto UTSUMI, Yoshiyuki SAKAI
  • Publication number: 20190283207
    Abstract: A screw rotor lead correction calculation device includes an initial data input section configured to input an error as a distance with respect to a reference lead at each axial position of a rotor groove portion of a screw rotor, and a processing machine input correction amount/position output section configured to compute and output, based on the error as the distance input to the initial data input section, a lead correction amount with respect to the reference lead and a lead correction starting position as an axial position for starting lead correction. With this configuration, correction data for obtaining a screw rotor with a high-accuracy lead can be obtained from a lead error with respect to a reference lead in a screw rotor obtained by ground finish of the material of the screw rotor.
    Type: Application
    Filed: June 7, 2019
    Publication date: September 19, 2019
    Inventors: Toshio YAMANAKA, Koji UTSUMI, Hisashi AOKI, Yoshiyuki YAMADA, Hidetaro KAYANUMA
  • Publication number: 20190243238
    Abstract: A photosensitive compound which can be suitably used for a resist composition having superior sensitivity with respect to light of short wavelength such as KrF and the like, especially to extreme ultraviolet or electron beam, superior resolution and depth of focus in lithography, and can suppress LER (line edge roughness) in fine pattern, a resist composition using the photosensitive compound, and a manufacturing method of a device is provided. A photosensitive compound including a divalent Te atom is provided.
    Type: Application
    Filed: December 20, 2017
    Publication date: August 8, 2019
    Applicant: TOYO GOSEI CO., LTD.
    Inventors: Michiya NAITO, Masamichi HAYAKAWA, Yoshiyuki UTSUMI
  • Publication number: 20190243243
    Abstract: A metal-containing onium salt compound suitable for use as a photodegradable base of a resist composition and a resist composition using the metal-containing onium salt compound are provided, the resist composition having excellent sensitivity to ionizing radiation such as extreme ultraviolet (EUV), excellent resolution and focal depth in lithography, and can reduce line width roughness (LWR) in a fine pattern. The onium salt compound including a specific metal is used as the photodegradable base.
    Type: Application
    Filed: October 25, 2017
    Publication date: August 8, 2019
    Applicant: TOYO GOSEI CO., LTD.
    Inventors: Michiya NAITO, Masamichi HAYAKAWA, Yoshiyuki UTSUMI
  • Publication number: 20190140092
    Abstract: A silicon carbide semiconductor device includes: a drift region of a first conductivity type; a base region of a second conductivity type disposed on the drift region; a main electrode contact region of the first conductivity type selectively embedded in a top of the base region at a higher impurity density than the drift region; a trench having a round part on a top surface side of the main electrode contact region to a level that is shallower than a depth of the main electrode contact region, the trench going from the round part through the base region and having a bottom that reaches the drift region; and an insulated gate structure provided on an inner side of the trench. A smallest radius of curvature of the round part is greater than a relatively high impurity region of the main electrode contact region.
    Type: Application
    Filed: October 9, 2018
    Publication date: May 9, 2019
    Applicant: Fuji Electric Co., Ltd.
    Inventors: Makoto UTSUMI, Yoshiyuki SAKAI
  • Patent number: 10216084
    Abstract: A sulfonic acid derivative, wherein the sulfonic acid derivative is represented by the following general formula (1): R1COOCH2CH2CFHCF2SO3?M+??(1) where: R1 represents a monovalent organic group having carbon number of 1 to 200, having at least one hydroxyl group and optionally having a substituent other than the hydroxyl group; and M+ represents a counter cation.
    Type: Grant
    Filed: November 26, 2015
    Date of Patent: February 26, 2019
    Assignee: Toyo Gosei Co., Ltd.
    Inventors: Yoshiyuki Utsumi, Noriaki Kobayashi, Takahiro Kamakura
  • Publication number: 20180011401
    Abstract: A sulfonic acid derivative, wherein the sulfonic acid derivative is represented by the following general formula (1): R1COOCH2CH2CFHCF2SO3?M+??(1) where: R1 represents a monovalent organic group having carbon number of 1 to 200, having at least one hydroxyl group and optionally having a substituent other than the hydroxyl group; and M+ represents a counter cation.
    Type: Application
    Filed: November 26, 2015
    Publication date: January 11, 2018
    Applicant: TOYO GOSEI CO., LTD.
    Inventors: Yoshiyuki Utsumi, Noriaki Kobayashi, Takahiro Kamakura
  • Patent number: 9862695
    Abstract: Disclosed is a monomer containing an N-acylcarbamoyl group and a lactone skeleton. The monomer is exemplified by Formula (1): where Ra is selected typically from hydrogen and C1-C6 alkyl; R1 is, independently in each occurrence, selected typically from halogen and optionally halogenated C1-C6 alkyl; “A” is selected from C1-C6 alkylene, oxygen, sulfur, and non-bond; m represents an integer of 0 to 8; X represents, independently in each occurrence, specific N-acylcarbamoyl; n represents an integer of 1 to 9; and Y represents a C1-C6 divalent organic group.
    Type: Grant
    Filed: August 25, 2015
    Date of Patent: January 9, 2018
    Assignees: DAICEL CORPORATION, TOKYO OHKA KOGYO CO., LTD.
    Inventors: Hiroshi Koyama, Masamichi Nishimura, Naoki Yamashita, Yoshitaka Komuro, Tomoyuki Hirano, Yoshiyuki Utsumi
  • Patent number: 9778567
    Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, and which includes a base component (A) which exhibits changed solubility in a developing solution under action of acid, the base component (A) including a polymeric compound (A1) having a structural unit (a0) represented by general formula (a0-0) shown below (wherein V11 represents an aliphatic cyclic group with or without a substituent; R1 represents a lactam-containing cyclic group or a sultam-containing cyclic group; Y1 represents an oxygen atom (—O—), an ester bond (—C(?O)—O—) or a single bond; and W2 represents a group formed by a polymerization reaction of a polymerizable group-containing group).
    Type: Grant
    Filed: November 13, 2014
    Date of Patent: October 3, 2017
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Masatoshi Arai, Yoshiyuki Utsumi
  • Patent number: 9644110
    Abstract: A method of producing a structure containing a phase-separated structure, including forming a layer containing a block copolymer on a substrate; applying a top coat material to the layer containing the block copolymer to form a top coat film; and subjecting the layer including the block copolymer having the top coat film formed thereon to annealing treatment so as to conduct a phase separation of the layer, the top coat material including an organic solvent component and a polymeric compound containing a structural unit having either a dicarboxylic acid or a salt of a dicarboxylic acid, and the organic solvent component containing water and an alcohol having 3 or more carbon atoms.
    Type: Grant
    Filed: March 31, 2015
    Date of Patent: May 9, 2017
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Takehiro Seshimo, Takaya Maehashi, Takahiro Dazai, Yoshiyuki Utsumi
  • Patent number: 9618842
    Abstract: A resist composition including a base component that exhibits changed solubility in an alkali developing solution under the action of acid, an acid-generator component that generates acid upon exposure, and a nitrogen-containing organic compound, the acid generator component including an acid generator represented by general formula (b0), the nitrogen-containing organic compound including a compound represented by general formula (d1) or general formula (d2) in which each of R1 and R2 represents an aryl group or an alkyl group, Rf represents a fluorinated alkyl group, X?represents a counter anion, each of R3 and R4 represents an aliphatic hydrocarbon group, R5 represents a hydrocarbon group having 5 or more carbon atoms, and each of R6 and R7 independently represents a hydrogen atom, an aliphatic hydrocarbon group, or —C(?O)—O—R5.
    Type: Grant
    Filed: November 5, 2010
    Date of Patent: April 11, 2017
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Yoshiyuki Utsumi, Makiko Irie
  • Patent number: 9606433
    Abstract: There is provided a resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, including a base component (A) which exhibits changed solubility in a developing solution by the action of acid, wherein the base component (A) contains a polymeric compound (A1) having a structural unit (a0) represented by general formula (a0) shown below. In the formula, A? represents an oxygen atom, a sulfur atom or an alkylene group of 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom; R1 represents a lactone-containing cyclic group, an —SO2— containing cyclic group or a carbonate-containing cyclic group; and W2 represents a group which is formed by polymerization reaction of a group containing a polymerizable group.
    Type: Grant
    Filed: May 15, 2013
    Date of Patent: March 28, 2017
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Yoshiyuki Utsumi, Masatoshi Arai, Takahiro Dazai, Yoshitaka Komuro
  • Patent number: 9567477
    Abstract: An undercoat agent used for phase separating a layer containing a block copolymer having a block of a structural unit derived from an (?-substituted) acrylate ester on a substrate, and which contains a resin component including a structural unit represented by formula (ba0-1), and/or a structural unit represented by formula (ba0-2), and a structural unit (ba0-3) having a substrate interacting group, wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R1 and R2 represent a halogen atom or an organic group of 1 to 20 carbon atoms which may contain an oxygen atom, a halogen atom, or a silicon atom, and n is 1 to 5.
    Type: Grant
    Filed: July 7, 2014
    Date of Patent: February 14, 2017
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Takehiro Seshimo, Tasuku Matsumiya, Takaya Maehashi, Takahiro Dazai, Yoshiyuki Utsumi
  • Patent number: 9499646
    Abstract: A negative resist composition including a complex represented by the general formula (1); and a polymerization initiator, in which M represents hafnium (Hf) or zirconium (Zr), X represents a ligand comprising a conjugate base of an acid which has an acid dissociation constant (pKa) of 3.8 or less and has a polymerizable group, Y represents a ligand having no polymerizable group, and n represents an integer of 1 to 4.
    Type: Grant
    Filed: May 12, 2016
    Date of Patent: November 22, 2016
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Naoki Yamashita, Yoshitaka Komuro, Yoshiyuki Utsumi, Daiju Shiono
  • Patent number: 9469712
    Abstract: A method of producing a copolymer, including copolymerizing a monomer (am0) containing a partial structure represented by formula (am0-1) shown below, a monomer (am1) containing an acid decomposable group which exhibits increased polarity by the action of acid and a monomer (am5) containing an —SO2— containing cyclic group in the presence of a nitrogen-containing compound (X) having a conjugated acid with an acid dissociation constant of less than 10 (in the formula, *0 to *4 each represents a valence bond).
    Type: Grant
    Filed: March 12, 2014
    Date of Patent: October 18, 2016
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Tomoyuki Hirano, Yoshiyuki Utsumi, Junichi Tsuchiya, Yoichi Hori
  • Patent number: 9442371
    Abstract: A method of producing a structure containing a phase-separated structure, including a step in which a layer including an Si-containing block copolymer having a plurality of blocks bonded is formed between guide patterns on a substrate; a step in which a solution of a top coat material is applied to the layer and the guide patterns so as to form a top coat film; and a step in which the layer including the Si-containing block copolymer and having the top coat film formed thereon is subjected to annealing treatment so as to conduct a phase separation of the layer; in which a solvent of the solution of the top coat material contains no basic substance.
    Type: Grant
    Filed: January 22, 2015
    Date of Patent: September 13, 2016
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Takehiro Seshimo, Takaya Maehashi, Takahiro Dazai, Yoshiyuki Utsumi, Tasuku Matsumiya, Ken Miyagi, Daiju Shiono, Tsuyoshi Kurosawa
  • Publication number: 20160259244
    Abstract: A negative resist composition including a complex represented by the general formula (1); and a polymerization initiator, in which M represents hafnium (Hf) or zirconium (Zr), X represents a ligand comprising a conjugate base of an acid which has an acid dissociation constant (pKa) of 3.8 or less and has a polymerizable group, Y represents a ligand having no polymerizable group, and n represents an integer of 1 to 4.
    Type: Application
    Filed: May 12, 2016
    Publication date: September 8, 2016
    Inventors: Naoki YAMASHITA, Yoshitaka KOMURO, Yoshiyuki UTSUMI, Daiju SHIONO