Abstract: A drive unit includes a first transistor, a second transistor, a current source that is connected to a high-potential-side electrode of the first transistor, and delivers constant current, a current control circuit configured to perform control to start of charging of the gates of the first and second transistors using the current source, and a gate charge circuit that charges the gates of the first and second transistors, separately from the current source.

Abstract: A drive unit includes a first transistor, a second transistor, a current source that is connected to a high-potential-side electrode of the first transistor and delivers constant current, a current control circuit configured to perform control to start of charging of the gates of the first and second transistors using the current source, and a gate charge circuit that charges the gates of the first and second transistors, separately from the current source.

Abstract: A drive unit includes a first transistor, a second transistor, a current source that is connected to a high-potential-side electrode of the first transistor, and delivers constant current, a current control circuit configured to perform control to start of charging of the gates of the first and second transistors using the current source, and a gate charge circuit that charges the gates of the first and second transistors, separately from the current source.

Abstract: A first switching element and a gate of a voltage-driven switching element are connected by a gate turn-on wiring through a first resistor. The gate of the voltage-driven switching element and a second switching element are connected by a gate turn-off wiring through a second resistor. A charge pump unit has a first capacitor, and a second capacitor configured to output a negative voltage. A resistor unit is arranged in at least one of a first wiring configured to connect the gate turn-on wiring and the first capacitor and a second wiring configured to connect the gate turn-off wiring and the first capacitor, and is configured to charge the first capacitor through the first wiring when the first switching element is turned on and to discharge the first capacitor through the second wiring when the second switching element is turned on.

Abstract: There is provided a semiconductor apparatus comprising: a switching element including a main element and a sense element; a main diode whose cathode is connected to a first main electrode of the main element and whose anode is connected to a second main electrode of the main element; a sense diode whose cathode is connected to a first main electrode of the sense element and whose anode is connected to a second main electrode of the sense element; and a deterioration detection circuit configured to apply a voltage to a sense node, and detects a deterioration of the switching element or the main diode based on a forward current flowing in the sense diode, being detected while the voltage is applied, the voltage being applied during an OFF period of switching element, wherein the sense diode is disposed for detecting current flowing through the main diode.

Abstract: A semiconductor device includes a transistor, a diode, a first detection circuit, a second detection circuit, a calculation circuit, and a determination circuit. The diode is connected in reverse parallel with the transistor. The first detection circuit is configured to detect a change rate of a gate voltage of the transistor with respect to time. The second detection circuit is configured to detect a gate current of the transistor. The calculation circuit is configured to calculate a gate capacitance based on the change rate of the gate voltage with respect to time, and the gate current. The determination circuit is configured to determine, based on a determination result of the gate capacitance when a charge is injected to a gate of the transistor, whether a current flows to the diode or to the transistor.

Abstract: A power conversion device includes a diode built-in transistor configured to include a transistor configured to be driven by a drive signal input into a gate, a diode configured to be connected in parallel with transistor, and have a forward direction from an emitter to a collector of the transistor, and sense diode configured to detect a current flowing in the diode, and have a cathode connected with the collector of the transistor; voltage generation part configured to generate, in a case where the diode does not conduct electricity, voltage between an anode of the diode and an anode of the sense diode, the voltage having a predetermined or greater difference with respect to a case where the diode conducts electricity; and determination part configured to determine whether the diode conducts electricity, based on the voltage between the anode of the diode and the anode of the sense diode.

Abstract: A drive unit includes a first transistor, a second transistor, a current source that is connected to a high-potential-side electrode of the first transistor, and delivers constant current, a current control circuit configured to perform control to start of charging of the gates of the first and second transistors using the current source, and a gate charge circuit that charges the gates of the first and second transistors, separately from the current source.

Abstract: A power conversion apparatus is provided with a plurality of DC-DC converters. Each of the DC-DC converters includes at least one gate resistor and a gate driver. The gate driver is configured to selectively connect a gate electrode of a switching element, via the gate resistor, with one of an on-potential point and an off-potential point. A gate resistor of a second DC-DC converter has a higher resistance than a gate resistor of a first DC-DC converter.

Abstract: An electric circuit includes: a plurality of switching elements connected in parallel to each other, the plurality of switching elements including a first switching element and a second switching element; a control voltage application element applying a control voltage to a connection point at which respective gates of the plurality of switching elements are connected to each other; a connection point grounding element grounding the connection point; and a control circuit configured to put the first switching element into an ON state and maintain the second switching element in an OFF state during a stand-by period, and put the second switching element into an ON state after an elapse of the stand-by period.

Abstract: A gate voltage control apparatus is configured to perform first to third processes when turning off the gate type switching device. In the first process, the gate voltage is decreased to a value lower than a threshold value so as to increase a voltage between main terminals. In the second process, the gate voltage is controlled at a value higher than the threshold voltage after timing on which the voltage between the main terminals makes a peak value during the first process. In the third process, the gate voltage is decreased to a value equal to or lower than a threshold voltage while the voltage between the main terminals remains at a value lower than the peak value and higher than the on voltage during the second process.

Abstract: A first switching element and a gate of a voltage-driven switching element are connected by a gate turn-on wiring through a first resistor. The gate of the voltage-driven switching element and a second switching element are connected by a gate turn-off wiring through a second resistor. A charge pump unit has a first capacitor, and a second capacitor configured to output a negative voltage. A resistor unit is arranged in at least one of a first wiring configured to connect the gate turn-on wiring and the first capacitor and a second wiring configured to connect the gate turn-off wiring and the first capacitor, and is configured to charge the first capacitor through the first wiring when the first switching element is turned on and to discharge the first capacitor through the second wiring when the second switching element is turned on.

Abstract: There is provided an electronic device comprising: a plurality of switching elements connected to a power supply; a plurality of specific information storage units provided for the corresponding switching elements and configured to store specific information of respective corresponding switching elements; a processing unit configured to control the switching elements; and a communication line disposed between the specific information storage units and the processing unit, through which the specific information of the respective switching elements is sent from the specific information storage units to the processing unit.

Abstract: A power conversion apparatus is provided with a plurality of DC-DC converters. Each of the DC-DC converters includes at least one gate resistor and a gate driver. The gate driver is configured to selectively connect a gate electrode of a switching element, via the gate resistor, with one of an on-potential point and an off-potential point. A gate resistor of a second DC-DC converter has a higher resistance than a gate resistor of a first DC-DC converter.

Abstract: A current control circuit includes a first drive switching device, a gate power source, a control switching device, a first resistor, an operational amplifier, and a switching circuit. The operational amplifier includes: an output terminal connected to the control switching device; a non-inverting input terminal; and an inverting input terminal configured to receive a reference potential. The switching circuit is configured to: input a value based on a potential difference between both ends of the first resistor to the non-inverting input terminal when a current flowing through the first drive switching device is equal to or smaller than a threshold level; and input a value based on a potential on a current pathway between the control switching device and the first drive switching device to the non-inverting input terminal when the current flowing through the first drive switching device is greater than the threshold level.

Abstract: A gate voltage control apparatus is configured to perform first to third processes when turning off the gate type switching device. In the first process, the gate voltage is decreased to a value lower than a threshold value so as to increase a voltage between main terminals. In the second process, the gate voltage is controlled at a value higher than the threshold voltage after timing on which the voltage between the main terminals makes a peak value during the first process. In the third process, the gate voltage is decreased to a value equal to or lower than a threshold voltage while the voltage between the main terminals remains at a value lower than the peak value and higher than the on voltage during the second process.

Abstract: A semiconductor drive apparatus includes a first control unit configured, when an overcurrent is detected flowing between a first main electrode and a second main electrode of a switching element, to make a gate of the switching element conductive with a predetermined reference potential, to make a control voltage applied between the gate and the first main electrode lower, and to turn off the switching element; a detection unit configured to detect a current generated accompanying charge or discharge of a feedback capacitance between the gate and the second main electrode; and a second control unit configured, when the overcurrent and the current generated accompanying the charge or discharge of the feedback capacitance are detected, to make a resistance between the gate and the reference potential lower.

Abstract: An electric circuit includes: a plurality of switching elements connected in parallel to each other, the plurality of switching elements including a first switching element and a second switching element; a control voltage application element applying a control voltage to a connection point at which respective gates of the plurality of switching elements are connected to each other; a connection point grounding element grounding the connection point; and a control circuit configured to put the first switching element into an ON state and maintain the second switching element in an OFF state during a stand-by period, and put the second switching element into an ON state after an elapse of the stand-by period.

Abstract: A drive circuit includes a gate drive node, a power source node, and an output transistor connected between the gate drive node and the power source node that flows a current into the gate drive node. The drive circuit further includes an input transistor smaller than the output transistor that forms a current mirror with the output transistor. The drive circuit further includes an operational amplifier that outputs a control voltage depending on a potential difference between a voltage of the gate drive node and a constant voltage lower than a voltage of the power source node. The drive circuit further includes a control transistor including a control electrode receiving an output of the operational amplifier that is connected in series with the input transistor. The drive circuit further includes a constant current source connected in series with the control transistor.

Abstract: A semiconductor apparatus includes a switching element configured to include a gate electrode, a first main electrode, a second main electrode, a sense electrode to output a sense current smaller than a principal current depending on the principal current flowing in the first main electrode, and to turn off when a control voltage being applied between the gate electrode and the first main electrode is reduced; a sense diode configured to include an anode connected with the sense electrode, and a cathode connected with the second main electrode; and a connection circuit configured to connect the gate electrode with the sense electrode when the switching element turns off.