Patents by Inventor Youichi Okita

Youichi Okita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11164936
    Abstract: A first-layer insulating film having a barrier property against a determined element contained in a ferroelectric capacitor as well as an oxygen permeability, a hydrogen permeability, and a water permeability is formed over a surface of the ferroelectric capacitor formed over a substrate. After that, heat treatment is performed in an oxidizing atmosphere. After the heat treatment, a second insulating film having a hydrogen permeability and a water permeability lower than those of the first-layer insulating film respectively is formed over a surface of the first-layer insulating film in a non-reducing atmosphere. A third-layer insulating film is formed over a surface of the second-layer insulating film. By doing so, degradation of a ferroelectric film under and after the formation of a semiconductor device having the ferroelectric capacitor is suppressed and deterioration in the characteristics of the ferroelectric capacitor is suppressed.
    Type: Grant
    Filed: January 3, 2020
    Date of Patent: November 2, 2021
    Assignee: FUJITSU SEMICONDUCTOR MEMORY SOLUTION LIMITED
    Inventors: Youichi Okita, Wensheng Wang, Kazuaki Takai
  • Publication number: 20200251551
    Abstract: A first-layer insulating film having a barrier property against a determined element contained in a ferroelectric capacitor as well as an oxygen permeability, a hydrogen permeability, and a water permeability is formed over a surface of the ferroelectric capacitor formed over a substrate. After that, heat treatment is performed in an oxidizing atmosphere. After the heat treatment, a second insulating film having a hydrogen permeability and a water permeability lower than those of the first-layer insulating film respectively is formed over a surface of the first-layer insulating film in a non-reducing atmosphere. A third-layer insulating film is formed over a surface of the second-layer insulating film. By doing so, degradation of a ferroelectric film under and after the formation of a semiconductor device having the ferroelectric capacitor is suppressed and deterioration in the characteristics of the ferroelectric capacitor is suppressed.
    Type: Application
    Filed: January 3, 2020
    Publication date: August 6, 2020
    Applicant: FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Youichi Okita, Wensheng Wang, Kazuaki Takai
  • Patent number: 10269813
    Abstract: A method of manufacturing a semiconductor device includes: forming an insulating film above a semiconductor substrate; forming a conductive film on the insulating film; forming a dielectric film on the conductive film; forming a plurality of upper electrodes at intervals on the dielectric film; forming a first protective insulating film on the upper electrodes and the dielectric film by a sputtering method; forming a second protective insulating film on the first protective insulating film by an atomic layer deposition method, thereby filling gaps of a grain boundary of the dielectric film with the second protective insulating film; and patterning the conductive film after the second protective insulating film is formed to provide a lower electrode.
    Type: Grant
    Filed: February 1, 2018
    Date of Patent: April 23, 2019
    Assignee: FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Youichi Okita, Hideki Ito, Wensheng Wang
  • Publication number: 20180175049
    Abstract: A method of manufacturing a semiconductor device includes: forming an insulating film above a semiconductor substrate; forming a conductive film on the insulating film; forming a dielectric film on the conductive film; forming a plurality of upper electrodes at intervals on the dielectric film; forming a first protective insulating film on the upper electrodes and the dielectric film by a sputtering method; forming a second protective insulating film on the first protective insulating film by an atomic layer deposition method, thereby filling gaps of a grain boundary of the dielectric film with the second protective insulating film; and patterning the conductive film after the second protective insulating film is formed to provide a lower electrode.
    Type: Application
    Filed: February 1, 2018
    Publication date: June 21, 2018
    Applicant: FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Youichi OKITA, Hideki ITO, Wensheng WANG
  • Patent number: 9917092
    Abstract: A method of manufacturing a semiconductor device includes: forming an insulating film above a semiconductor substrate; forming a conductive film on the insulating film; forming a dielectric film on the conductive film; forming a plurality of upper electrodes at intervals on the dielectric film; forming a first protective insulating film on the upper electrodes and the dielectric film by a sputtering method; forming a second protective insulating film on the first protective insulating film by an atomic layer deposition method, thereby filling gaps of a grain boundary of the dielectric film with the second protective insulating film; and patterning the conductive film after the second protective insulating film is formed to provide a lower electrode.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: March 13, 2018
    Assignee: FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Youichi Okita, Hideki Ito, Wensheng Wang
  • Publication number: 20160211269
    Abstract: A method of manufacturing a semiconductor device includes: forming an insulating film above a semiconductor substrate; forming a conductive film on the insulating film; forming a dielectric film on the conductive film; forming a plurality of upper electrodes at intervals on the dielectric film; forming a first protective insulating film on the upper electrodes and the dielectric film by a sputtering method; forming a second protective insulating film on the first protective insulating film by an atomic layer deposition method, thereby filling gaps of a grain boundary of the dielectric film with the second protective insulating film; and patterning the conductive film after the second protective insulating film is formed to provide a lower electrode.
    Type: Application
    Filed: December 28, 2015
    Publication date: July 21, 2016
    Inventors: Youichi Okita, Hideki Ito, Wensheng Wang