Patents by Inventor Youichi Shindou

Youichi Shindou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with alternating conductivity type layer and method of manufacturing the same
    Patent number: 6677626
    Abstract: This invention achieves a high inverse voltage of a super-junction semiconductor device, which has a drift layer composed of a parallel pn layer that conducts electricity in the ON state and is depleted in the OFF state. An n− high resistance region is formed at the periphery of a drift layer composed of a parallel pn layer of n drift regions and p partition regions. The impurity density ND of the n− high resistance region is 5.62×1017×VDSS−1.36(cm−3) or less. VDSS denotes the withstand voltage (V). An n low resistance region is arranged adjacent to the n− high resistance region.
    Type: Grant
    Filed: November 10, 1999
    Date of Patent: January 13, 2004
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Youichi Shindou, Yasushi Miyasaka, Tatsuhiko Fujihira, Manabu Takei