Abstract: The objectives of the present invention is to provide smaller, lighter and less expensive structure in a starting device for discharge lamp for car use so as to prevent breakage due to vibrations etc. The device having the following arrangement realizes the above-mentioned objective. A starting device for a discharge lamp comprises a socket for mounting the discharge lamp and starting members such as a starting transformer etc. where the starting transformer comprises a bobbin having a core-less structure and a primary coil and a secondary coil wound around the bobbin.

Abstract: Disclosed is a method of fabricating a semiconductor device, in which an interlayer insulating film having a low dielectric constant is formed by coating a wiring, and either a via hole or a contact hole is formed in the interlayer insulating film. The method of fabricating a semiconductor device having the interlayer insulating film 25 formed on the film-formed substrate 21 with the exposed wiring 23, comprises the step of converting a silicon compound containing only the Si, O, C and H into a plasma gas as a film-forming gas to react the plasma gas, thus forming the block insulating film 24 containing silicon (Si), oxygen (O), carbon (C) and hydrogen (H) between the wiring 23 and the interlayer insulating film 25.

Abstract: The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film containing a coating insulating film having a low dielectric constant. In construction, there are provided the steps of preparing a substrate 20 on a surface of which a coating insulating film 26 is formed by coating a coating liquid containing any one selected from a group consisting of silicon-containing inorganic compound and silicon-containing organic compound, and forming a protection layer 27 for covering the coating insulating film 26 by plasmanizing a first film forming gas to react, wherein the first film forming gas consists of any one selected from a group consisting of alkoxy compound having Si—H bonds and siloxane having Si—H bonds and any one oxygen-containing gas selected from a group consisting of O2, N2O, NO2, CO, CO2, and H2O.

Abstract: A newly defined data type is added to a database management system. Information about a query component assisting in querying data belonging to the newly defined data type is registered along with data type information in a query component information. If the data type being queried is the newly added data type, the query component information is searched to find a query component for assisting queries to data belonging to the particular data type. The matching query component is activated and a screen is displayed to input information needed to the query data belonging to the data type. The information is input and a query statement is generated using the inputted information. The generated query statement is issued to the database management system and query results are obtained.

Abstract: A process gas containing any one of N2 or N2O is plasmanized and then a surface of a copper wiring layer is exposed to the plasmanized process gas, whereby a surface layer portion of a copper wiring layer is reformed and made into a copper diffusion preventing layer. According to this method, a noble semiconductor device can be provided, in which, along with increasing the operation speed, the copper diffusion is suppressed.

Abstract: A newly defined data type is added to a database management system. Information about a query component assisting in querying data belonging to the newly defined data type is registered along with data type information in a query component information. If the data type being queried is the newly added data type, the query component information is searched to find a query component for assisting queries to data belonging to the particular data type. The matching query component is activated and a screen is displayed to input information needed to query data belonging to the data type. The information is input and a query statement is generated using the inputted information. The generated query statement is issued to the database management system and query results are obtained.

Abstract: The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film containing a coating insulating film having a low dielectric constant. In construction, there are provided the steps of preparing a substrate 20 on a surface of which a coating insulating film 26 is formed by coating a coating liquid containing any one selected from a group consisting of silicon-containing inorganic compound and silicon-containing organic compound, and forming a protection layer 27 for covering the coating insulating film 26 by plasmanizing a first film forming gas to react, wherein the first film forming gas consists of any one selected from a group consisting of alkoxy compound having Si—H bonds and siloxane having Si—H bonds and any one oxygen-containing gas selected from a group consisting of O2, N2O, NO2, CO, CO2, and H2O.

Abstract: A data transfer device which set an address of page as transfer destination and transfer data to the page. In the data transfer device to which the present invention is applied, an address and page length of a page are acquired on the basis of an address of a page table specified by a read command. Then, transfer information including the address of transfer source, transfer data length and address of transfer destination of data is set according to page element of page as transfer destination page. Then, it is judged whether the transfer destination page and other page form a continuous area. And if it is judged that the continuous area is formed, transfer information will be changed. Data transfer is effected on the basis of changed transfer information. That reduces the need to set the other area at the transfer destination and thus the transfer efficiency improves.

Abstract: The present invention relates to a film forming method of forming an interlayer insulating film having a low dielectric constant to cover a wiring. In construction, an insulating film for covering a wiring is formed on the substrate by plasmanizing a film forming gas, that consists of any one selected from a group consisting of alkoxy compound having Si—H bonds and siloxane having Si—H bonds and any one oxygen-containing gas selected from a group consisting of O2, N2O, NO2, CO, CO2, and H2O, to react.

Abstract: The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N2) to a major deposition gas component consisting of siloxane and N2O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film 25,27,or28 on a substrate targeted for film formation.

Abstract: The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film containing a coating insulating film having a low dielectric constant. In construction, there are provided the steps of preparing a substrate 20 on a surface of which a coating insulating film 26 is formed by coating a coating liquid containing any one selected from a group consisting of silicon-containing inorganic compound and silicon-containing organic compound, and forming a protection layer 27 for covering the coating insulating film 26 by plasmanizing a first film forming gas to react, wherein the first film forming gas consists of any one selected from a group consisting of alkoxy compound having Si—H bonds and siloxane having Si—H bonds and any one oxygen-containing gas selected from a group consisting of O2, N2O, NO2, CO, CO2, and H2O.

Abstract: The present invention relates to a semiconductor device manufacturing method of forming an inter-wiring layer insulating film having a low dielectric constant to cover a copper wiring. In construction, in a semiconductor device manufacturing method of forming an insulating film 34 having a low dielectric constant on a substrate 20, the insulating film 34 is formed by plasmanizing a film forming gas, that consists of at least any one of alkyl compound having siloxane bonds and methylsilane (SiHn(CH3)4-n: n=0, 1, 2, 3), any one oxygen-containing gas selected from a group consisting of N2O, H2O, and CO2, and ammonia (NH3) to react.

Abstract: In a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant on a substrate 21 from a surface of which a copper wiring 23 is exposed, the interlayer insulating film consists of multi-layered insulating films 24, 25, 29 and the insulating film 24, that contacts to the copper wiring 23, out of the multi-layered insulating films 24, 25, 29 is formed by plasmanizing a film forming gas containing at least an alkyl compound having siloxane bonds and any one of nitrogen (N2) and ammonia (NH3) to react.

Abstract: There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.

Abstract: Disclosed is a method of fabricating a semiconductor device, in which an interlayer insulating film having a low dielectric constant is formed by coating a wiring, and either a via hole or a contact hole is formed in the interlayer insulating film. The method of fabricating a semiconductor device having the interlayer insulating film 25 formed on the film-formed substrate 21 with the exposed wiring 23, comprises the step of converting a silicon compound containing only the Si, O, C and H into a plasma gas as a film-forming gas to react the plasma gas, thus forming the block insulating film 24 containing silicon (Si), oxygen (O), carbon (C) and hydrogen (H) between the wiring 23 and the interlayer insulating film 25.

Abstract: An optical fiber seal verifying system includes an optical pattern generation unit for reading the optical pattern of an optical fiber seal in sealing and verification and generating first and second optical pattern data corresponding to the sealing and verification, respectively, a seal number input unit for inputting a unique seal number for identifying the optical fiber seal, a memory unit for recording the optical pattern data generated by the optical pattern generation unit together with the seal number input by the seal number input unit, a processor unit for reading the first optical pattern data recorded in the memory unit in verifying the optical fiber seal and the second optical pattern data recorded in the memory unit in sealing the optical fiber seal corresponding to the seal number on the basis of the seal number recorded in the memory unit and comparing the first and second optical pattern data with each other to calculate the concordance ratio, and a display unit for displaying the calculation

Abstract: The objectives of the present invention is to provide smaller, lighter and less expensive structure in a starting device for discharge lamp for car use so as to prevent breakage due to vibrations etc. The device having the following arrangement realizes the above-mentioned objective. A starting device for a discharge lamp comprises a socket for mounting the discharge lamp and starting members such as a starting transformer etc. where the starting transformer comprises a bobbin having a core-less structure and a primary coil and a secondary coil wound around the bobbin.

Abstract: A user defined ADT function (to be implemented by an embedded module assigned to the function) is executed with module calling triggers other than the execution of the ADT function described in an SQL statement in a database management method which allows the user to define a data type. By creating a proper execution procedure command package, an embedded module implementing an ADT function can be executed even if the function is defined in a format to return execution results as a set. The database processing method includes an ADT function analysis for selecting a procedural model for creating a proper execution procedure command package in accordance with an evaluation style and a non-ADT function called embedded module analysis for adding information on embedded modules called on module calling triggers other than execution of ADT functions.

Abstract: A method for melting a silicon starting material can suppress silica (SiO2) from melting out from a quartz crucible wherein the silicon starting material is melted and can provide a high-quality silicon single crystal in a high yield. The growth method comprises melting the silicon starting material charged in the crucible while applying thereto a static magnetic field, contacting a seed crystal to a surface of the silicon melt, and pulling the seed crystal upwardly to solidify the contacted melt. The silicon starting material charged in the crucible, which is under melting, is applied with a static magnetic field such as a Cusp magnetic field, a horizontal magnetic field and/or a vertical magnetic field. The application can control heat convection occurring in the crucible during the course of the melting of the starting material, thereby obtaining a silicon single crystal having a reduced number of dislocation defects.

Abstract: A user defined ADT function (to be implemented by an embedded module assigned to the function) is executed with module calling triggers other than the execution of the ADT function described in an SQL statement in a database management method which allows the user to define a data type. By creating a proper execution procedure command package, an embedded module implementing an ADT function can be executed even if the function is defined in a format to return execution results as a set. The database processing method includes an ADT function analysis for selecting a procedural model for creating a proper execution procedure command package in accordance with an evaluation style and a non-ADT function called embedded module analysis for adding information on embedded modules called on module calling triggers other than execution of ADT functions.