Abstract: An electroluminescent display apparatus may include a first semiconductor pattern including a first channel region and a first conductive region which is a region other than the first channel region, a first gate electrode overlapping the first channel region of the first semiconductor pattern with a first gate insulation layer therebetween, a first interlayer insulation layer covering the first semiconductor pattern, and the first gate electrode, a second semiconductor pattern disposed on the first interlayer insulation layer, the second semiconductor pattern including a second channel region and a second conductive region which is a region other than the second channel region, and a second gate electrode overlapping the second channel region of the second semiconductor pattern with a second gate insulation layer therebetween.

Abstract: An electroluminescent display apparatus may include a display panel including a plurality of pixels, a gate driving circuit driving scan lines and emission lines connected to the plurality of pixels, and a data driving circuit driving data lines connected to the plurality of pixels. A first pixel arranged in an nth (where n is a natural number) pixel row among the pixels included in the display panel of the electroluminescent display apparatus may include a light emitting device, a driving element, a plurality of switch elements, and a storage capacitor.

Abstract: A display device includes a gate electrode on a substrate of a semiconductor device, a gate insulating film over the gate electrode, an active layer comprising an oxide including indium, zinc and gallium on the gate insulating film, and overlapping the gate electrode, and a source electrode and a drain electrode that are spaced apart from each other, wherein the active layer is formed from a zinc-rich target material, and an atomic % ratio of indium, zinc and gallium in the active layer is different from an atomic % ratio of the zinc-rich target material.

Abstract: A display device includes a gate electrode on a substrate of a semiconductor device, a gate insulating film over the gate electrode, an active layer comprising an oxide including indium, zinc and gallium on the gate insulating film, and overlapping the gate electrode, and a source electrode and a drain electrode that are spaced apart from each other, wherein the active layer is formed from a zinc-rich target material, and an atomic % ratio of indium, zinc and gallium in the active layer is different from an atomic % ratio of the zinc-rich target material.

Abstract: A method for manufacturing a semiconductor device is discussed. The method includes forming a gate electrode on a substrate, forming a gate insulating film over the substrate, depositing an In—Ga—Zn oxide over the gate insulating film while heating the substrate to a temperature of 200 to 300° C., an atomic percent ratio of Zn in the In—Ga—Zn oxide as-deposited being higher than that of In or Ga, heat-treating the deposited In—Ga—Zn oxide at a temperature of 200 to 350° C., thereby forming an active layer crystallized throughout an entire thickness of the active layer, and forming a source electrode and a drain electrode.

Abstract: A method for manufacturing a semiconductor device is discussed. The method includes forming a gate electrode on a substrate, forming a gate insulating film over the substrate, depositing an In—Ga—Zn oxide over the gate insulating film while heating the substrate to a temperature of 200 to 300° C., an atomic percent ratio of Zn in the In—Ga—Zn oxide as-deposited being higher than that of In or Ga, heat-treating the deposited In—Ga—Zn oxide at a temperature of 200 to 350° C., thereby forming an active layer crystallized throughout an entire thickness of the active layer, and forming a source electrode and a drain electrode.

Abstract: An oxide semiconductor crystallization method may include depositing an In—Ga—Zn oxide over the substrate while heating a substrate to a temperature of 200 to 300° C., and heat-treating the deposited In—Ga—Zn oxide at a temperature of 200 to 350° C., thereby forming an oxide semiconductor layer crystallized throughout an entire thickness thereof.

Abstract: Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. A seed layer is formed above the substrate. The seed layer has a crystalline structure that is substantially dominant along the c-axis. An IGZO layer is formed above the seed layer. The seed layer may include zinc oxide. A stack of alternating seed layers and IGZO layers may be formed.

Abstract: An oxide semiconductor crystallization method may include depositing an In—Ga—Zn oxide over the substrate while heating a substrate to a temperature of 200 to 300° C., and heat-treating the deposited In—Ga—Zn oxide at a temperature of 200 to 350° C., thereby forming an oxide semiconductor layer crystallized throughout an entire thickness thereof.

Abstract: A method for manufacturing a thin film transistor (TFT) array substrate having enhanced reliability is disclosed. The method includes forming a multilayer structure including at least one first metal layer and a second metal layer made of copper, forming a first mask layer including a first mask area corresponding to a data line and a second mask area corresponding to an electrode pattern to overlap with an active layer, patterning the multilayer structure, thereby forming the data line constituted by the multilayer structure, patterning the second metal layer, thereby forming the electrode pattern constituted by the at least one first metal layer, forming a second mask layer to expose a portion of the electrode pattern corresponding to a channel area of the active layer, patterning the at least one first metal layer, thereby forming source and drain.

Abstract: A liquid crystal display device includes first and second substrates facing into each other, a gate line and a data line on an inner surface of the first substrate, the gate line and the data line defining a pixel region, a thin film transistor connected to the gate line and the data line, a pixel electrode connected to the thin film transistor and disposed at the pixel region, a color filter layer disposed closer than the pixel electrode from the first substrate, the color filter layer corresponding to the pixel electrode, a black matrix over the thin film transistor, a common electrode on an inner surface of the second substrate, and a liquid crystal layer interposed between the pixel electrode and the common electrode.

Abstract: Provided are a roller apparatus, a printing method and a method of fabricating an LCD device using the same, which can minimize the number of processes and a printing defect. In the printing method, first patterns are formed on a blanket. The first patterns have different surface energy from that of the blanket, and the blanket is formed around a roller. The roller is rotated and a printing material is dropped to form second patterns on the blanket between the first patterns. The second patterns are transferred from the roller onto a substrate.

Abstract: A method for manufacturing a thin film transistor (TFT) array substrate having enhanced reliability is disclosed. The method includes forming a multilayer structure including at least one first metal layer and a second metal layer made of copper, forming a first mask layer including a first mask area corresponding to a data line and a second mask area corresponding to an electrode pattern to overlap with an active layer, patterning the multilayer structure, thereby forming the data line constituted by the multilayer structure, patterning the second metal layer, thereby forming the electrode pattern constituted by the at least one first metal layer, forming a second mask layer to expose a portion of the electrode pattern corresponding to a channel area of the active layer, patterning the at least one first metal layer, thereby forming source and drain.

Abstract: A method for fabricating color filter layer of an LCD comprises forming a plurality of black matrixes separated at certain intervals on a color filter substrate, and forming R, G and B color filter layers by using a plurality of needles between the plurality of black matrixes on the color filter substrate.

Abstract: Provided are a roller apparatus, a printing method and a method of fabricating an LCD device using the same, which can minimize the number of processes and a printing defect. In the printing method, first patterns are formed on a blanket. The first patterns have different surface energy from that of the blanket, and the blanket is formed around a roller. The roller is rotated and a printing material is dropped to form second patterns on the blanket between the first patterns. The second patterns are transferred from the roller onto a substrate.

Abstract: Provided are a roller apparatus, a printing method and a method of fabricating an LCD device using the same, which can minimize the number of processes and a printing defect. In the printing method, first patterns are formed on a blanket. The first patterns have different surface energy from that of the blanket, and the blanket is formed around a roller. The roller is rotated and a printing material is dropped to form second patterns on the blanket between the first patterns. The second patterns are transferred from the roller onto a substrate.

Abstract: A liquid crystal display (LCD) device of a horizontal electric field type is disclosed. The LCD device is fabricated by a three-mask process, and has gate pad, common pad and data pad electrodes, each including a upper electrode formed of a transparent conductive material. With a lift-off process, these upper electrodes are formed within contact holes.

Abstract: A liquid crystal display (LCD) device of a horizontal electric field type is disclosed. The LCD device is fabricated by a three-mask process, and has gate pad, common pad and data pad electrodes, each including a upper electrode formed of a transparent conductive material. With a lift-off process, these upper electrodes are formed within contact holes.

Abstract: A liquid crystal display panel device includes a thin film transistor array substrate having a gate line provided on a substrate, a data line intersecting the gate line and having a gate insulating pattern disposed therebetween to define a pixel area, a thin film transistor provided at the intersection between the gate line and the data line, a protective film for protecting the thin film transistor, a pixel electrode provided at the pixel area and connected to the thin film transistor, a gate pad connected to the gate line and formed from a transparent conductive film included in the gate line, and a data pad connected to the data line and formed from the transparent conductive film, and a color filter array substrate joined with the thin film transistor array substrate to be opposed to each other, wherein the protective film is provided at an area where it overlaps with the color filter array substrate to expose the transparent conductive films included in the gate pad and the data pad.

Abstract: A liquid crystal display (LCD) device of a horizontal electric field type is disclosed. The LCD device is fabricated by a three-mask process, and has gate pad, common pad and data pad electrodes, each including a upper electrode formed of a transparent conductive material. With a lift-off process, these upper electrodes are formed within contact holes.