Abstract: Disclosed in an embodiment is a semiconductor device comprising: a semiconductor structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a second electrode electrically connected to the second conductive type semiconductor layer; and a reflective layer disposed under the second electrode, wherein the second conductive type semiconductor layer comprises a first sub-layer and a second sub-layer disposed between the first sub-layer and the active layer and having an aluminum (Al) composition higher than that of the first sub-layer, the reflective layer comes into contact with the lower surface of the second sub-layer, and the second electrode comes into contact with the first sub-layer.

Abstract: An embodiment includes a semiconductor device including a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first insulation layer disposed on the semiconductor structure; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed on the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; a second cover electrode disposed on the second electrode; and a second insulation layer extending from an upper surface of the first cover electrode to an upper surface of the second cover electrode.

Abstract: An embodiment provides a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses extending through the second conductive semiconductor layer and the active layer and arranged up to a partial region of the first conductive semiconductor layer; a plurality of first electrodes arranged inside the plurality of recesses and electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a first conductive layer electrically connected to the plurality of first electrodes; a second conductive layer electrically connected to the second electrode; and an electrode pad electrically connected to the second conductive layer, wherein the electrode pad comprises a first electrode pad and a seco

Abstract: One embodiment comprises: a semiconductor substrate; a pattern layer disposed on the semiconductor substrate and comprising a plurality of patterns that are spaced apart from each other; a nitride semiconductor layer disposed on the pattern layer; and a semiconductor substrate disposed on the nitride semiconductor layer and comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, wherein the thermal conductivity of the pattern layer is higher than the thermal conductivity of the semiconductor substrate and the thermal conductivity of the semiconductor structure.

Abstract: An embodiment provides a semiconductor device including a light-emitting structure including a plurality of light-emitting portions disposed at a side and a plurality of second light-emitting portions disposed at another side, a plurality of first connection electrodes configured to electrically connect the plurality of first light-emitting portions, a plurality of second connection electrodes configured to electrically connect the plurality of second light-emitting portions, a first pad disposed on the plurality of first light-emitting portions, and a second pad disposed on the plurality of second light-emitting portions. The first pad includes a plurality of 1-2 pads extending toward the second pad. The second pad includes a plurality of 2-2 pads extending toward the first pad. The first connection electrode includes a region between the plurality of 1-2 pads in a thickness direction of the light-emitting structure.

Abstract: An embodiment discloses an ultraviolet light emitting element including: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an etched region in which the first conductive semiconductor layer is exposed; a first insulating layer disposed on the light emitting structure and including a first hole which exposes a portion of the etched region; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the light emitting structure includes an intermediate layer regrown on the first conductive semiconductor layer exposed in the first hole, the first electrode is disposed on the intermediate layer, the etched region includes a first etched region disposed at an inner side and a second etched region disp

Abstract: A semiconductor device including a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer; a first electrode provided on a first surface of the first semiconductor layer; a second electrode provided on a first surface of the second semiconductor layer, the active layer being provided between the first surface of the first semiconductor layer and a second surface of the second semiconductor layer that is opposite to the first surface of the second semiconductor layer; a first insulation layer provided on the first surface of the first semiconductor layer, the first surface of the second semiconductor layer, and a side surface of the active layer; a first cover electrode provided on the first electrode; a second cover electrode provided on the second electrode, a second insulation layer provided on the first cover electrode, the second cover electrode, and the first insulation layer, wherein: the second insulation layer includes a first opening over the

Abstract: Disclosed is a method for manufacturing a semiconductor light emitting device. The method includes a first step of forming a semiconductor structure in which a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer are sequentially stacked; and a second step of forming a mesa structure by removing a portion of each of the second conductive-type semiconductor layer and the active layer, wherein the second step includes: forming a mesa structure by etching a portion of each of the second conductive-type semiconductor layer and the active layer using a plasma etching process; and performing an atomic layer etching process on a surface of the mesa structure formed by the plasma etching process.

Abstract: Disclosed in an embodiment is a semiconductor device comprising: a substrate; a light emitting structure including a first conductive semiconductor layer and a second conductive semiconductor layer, which are arranged on the substrate, an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, a concave part that is concave on the second conductive semiconductor layer toward the first conductive semiconductor layer, and a recess; a first electrode arranged on the concave part and electrically connected to the first conductive semiconductor layer; a second electrode arranged on the light emitting structure and electrically connected to the second conductive semiconductor layer; a first pad arranged on the first electrode; and a second pad arranged on the second electrode, wherein the recess separates the second conductive semiconductor layer and the active layer into an active region and an inactive region, and the first pad vertically overlaps the

Abstract: Disclosed in an embodiment is a semiconductor device comprising: a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a reflective layer disposed on the second electrode and including a first metal; and a nitride of the first metal between the second electrode and the reflective layer.

Abstract: An embodiment provides a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, and a plurality of first recesses and second recesses which extend through the second conductive semiconductor layer and the active layer and are arranged up to one region of the first conductive semiconductor layer, a first electrode disposed inside each of the first recesses and second recesses to be electrically connected to the first conductive semiconductor layer, and a second electrode electrically connected to the second conductive semiconductor layer, wherein the first conductive semiconductor layer, the active layer, the second conductive semiconductor layer include aluminum, and the number of most adjacent recesses in the plurality of second recesses is fewer than that in the plurality of first recesses and the plurality of second recesses include multiple recesses, each having an area larger than that of each

Abstract: Disclosed in an embodiment is a semiconductor device comprising: a conductive substrate; a semiconductor structure, which is arranged on the conductive substrate, comprises a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and comprises a plurality of recesses which pass through the second conductive type semiconductor layer and the active layer and up to a partial region of the first conductive type semiconductor layer; a first electrode electrically connecting the first conductive type semiconductor layer to the conductive substrate; a second electrode electrically connected to the second conductive type semiconductor layer; and an insulating layer arranged inside the plurality of recesses, wherein the plurality of recesses comprise a first recess extending along the outer surface of the semiconductor structure and a plurality of seco

Abstract: Disclosed in an embodiment is a semiconductor device comprising: a substrate; a semiconductor structure including a first conductive semiconductor layer and a second conductive semiconductor layer, which are arranged on the substrate, an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, and a recess formed in the second conductive semiconductor layer and the active layer; a first electrode arranged on the semiconductor structure and electrically connected with the first conductive semiconductor layer; a second electrode arranged on the semiconductor structure and electrically connected with the second conductive semiconductor layer; a first pad arranged on the first electrode; and a second pad arranged on the second electrode, wherein the recess separates the second conductive semiconductor layer and the active layer into an active region and an inactive region, the recess extends so as to encompass the active region, and the second pad exten

Abstract: A light emitting device can include a sapphire substrate; a first conductivity type semiconductor layer disposed on the sapphire substrate; an active layer disposed on the first conductivity type semiconductor layer; a plurality of p-type conductors disposed on the active layer, and separated from each other; a first pad disposed on the first conductivity type semiconductor layer; and a second pad disposed on the plurality of p-type conductors, in which the plurality of p-type conductors are arranged in a first direction, the second pad is spaced apart from the first pad in a second direction, the second direction is perpendicular to the first direction, each of the plurality of p-type conductors has a first width in the first direction and a second width in the second direction, the first width being less than the second width, the plurality of p-type conductors are evenly spaced apart by a first distance in the first direction, and the first distance being less than the first width of each of the plurality

Abstract: An embodiment provides a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses extending through the second conductive semiconductor layer and the active layer and arranged up to a partial region of the first conductive semiconductor layer; a plurality of first electrodes arranged inside the plurality of recesses and electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a first conductive layer electrically connected to the plurality of first electrodes; a second conductive layer electrically connected to the second electrode; and an electrode pad electrically connected to the second conductive layer, wherein the electrode pad comprises a first electrode pad and a seco

Abstract: An embodiment relates to a light emitting device comprise a second electrode which includes indium tin oxide (ITO), an ohmic characteristic between a second semiconductor layer and the second electrode is improved and a driving voltage is also improved. An embodiment relates to a light emitting device comprise a capping layer that can overlap the second semiconductor layer with the second electrode interposed therebetween and include a material of which a difference in thermal expansion coefficient with the second semiconductor layer is 3 or less. Therefore, since the capping layer is electrically connected to the second electrode, delamination and lifting of an interface between the second electrode and the second semiconductor layer is prevented, and reliability of the light emitting device is improved.

Abstract: Disclosed is in the embodiment is a semiconductor device comprising: a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer disposed between the second conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the first conductive semiconductor layer includes a first sub semiconductor layer, a third sub semiconductor layer and a second sub semiconductor layer disposed between the first sub semiconductor layer and the third sub semiconductor layer, wherein proportion of aluminum in the first sub semiconductor layer and the third sub semiconductor layer is larger than an proportion of aluminum in the active layer, and an proportion of aluminum in the second sub semiconductor layer is smaller than the proportion of aluminum in the first sub semiconductor layer and the

Abstract: Disclosed in an embodiment is a semiconductor device comprising: a semiconductor structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a second electrode electrically connected to the second conductive type semiconductor layer; and a reflective layer disposed under the second electrode, wherein the second conductive type semiconductor layer comprises a first sub-layer and a second sub-layer disposed between the first sub-layer and the active layer and having an aluminum (Al) composition higher than that of the first sub-layer, the reflective layer comes into contact with the lower surface of the second sub-layer, and the second electrode comes into contact with the first sub-layer.

Abstract: An embodiment discloses a semiconductor element comprising: a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; and an electron blocking layer arranged between the second conducive semiconductor layer and the active layer, wherein the section of the first conductive semiconductor layer decreases in a first direction, the electron blocking layer has an area in which the section thereof increases in the first direction, and the first direction is defined from the first conductive semiconductor layer to the second conductive semiconductor layer.

Abstract: One embodiment comprises: a semiconductor substrate; a pattern layer disposed on the semiconductor substrate and comprising a plurality of patterns that are spaced apart from each other; a nitride semiconductor layer disposed on the pattern layer; and a semiconductor substrate disposed on the nitride semiconductor layer and comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, wherein the thermal conductivity of the pattern layer is higher than the thermal conductivity of the semiconductor substrate and the thermal conductivity of the semiconductor structure.